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Diodes Incorporated MMBT3904LP-7
- Part No.:
- MMBT3904LP-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- 3-UFDFN
- Datasheet:
-
MMBT3904LP-7.pdf
- Description:
- TRANS NPN 40V 0.2A X1-DFN1006-3
- Quantity:
- Payment:
- Shipping:
Inventory:110,794
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Product details
Overview
MMBT3904LP-7 from Diodes Incorporated is a 40V NPN small-signal transistor in DFN1006-3 package, rated for 200mA collector current and 1000mW power dissipation (with exposed pad), featuring BVCEO > 40V, VBE(sat) ≤ 0.85V at IC = 10mA/IB = 1mA, and fT ≥ 300MHz - used in compact load switching and signal amplification in space-constrained consumer and industrial PCBs.
For engineers reviewing the MMBT3904LP-7 datasheet, MMBT3904LP-7 pinout, MMBT3904LP-7 application, or MMBT3904LP-7 equivalent, key selection criteria include its ultra-small 0.60 mm² footprint, JEDEC-qualified reliability, complementary PNP pairing with MMBT3906LP, thermal resistance of 120°C/W (junction-to-lead), and AEC-Q101 readiness via automotive-grade variants.
Technical Context
This NPN bipolar junction transistor operates as a general-purpose amplifier and switch with DC current gain (hFE) ranging from 40 to 300 across 100µA–100mA collector currents, and exhibits low VCE(sat) (≤ 0.30V at IC = 50mA/IB = 5mA) enabling efficient low-voltage switching. Its 300MHz fT supports RF-coupled audio and digital interface buffering up to ~100MHz.
Thermally optimized for high-density layouts, it uses an exposed collector pad in the X1-DFN1006-3 package, delivering RθJL = 120°C/W and RθJA = 120°C/W when mounted on 25mm × 25mm 2oz copper - critical for sustained 400–1000mW operation in thermally isolated sections of portable electronics.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum safe collector-emitter voltage before breakdown; enables use in 24V logic-level interfaces and 36V auxiliary rails. |
| IC | 200 mA - Continuous collector current rating; supports driving LEDs, small relays, or MOSFET gates without external heat sinking. |
| PD (exposed pad) | 1000 mW - Power dissipation with thermal pad soldered to 25mm² copper; doubles capability vs. standard SOT-23 equivalents. |
| fT | ≥300 MHz - Current gain bandwidth product; suitable for RF preamps, oscillator buffers, and high-speed digital signal conditioning. |
| VBE(sat) | 0.65–0.95 V - Base-emitter saturation voltage range; ensures reliable turn-on with 1.8V/3.3V microcontroller GPIOs without level-shifting. |
| hFE | 100–300 @ IC = 10mA - DC current gain at mid-range bias; simplifies base resistor calculation for predictable switching thresholds. |
| ESD HBM | 4000 V - Human Body Model ESD rating per JESD22-A114; reduces need for external protection in handheld and I/O-peripheral designs. |
Pinout & Package
Package: X1-DFN1006-3 (1.0 × 0.6 × 0.5 mm, 0.60 mm² footprint, 0.5 mm height), molded green compound, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | E | Reference node for current flow; connected to ground or low-side return path in common-emitter configurations. |
| 2 (Base) | B | Control input; requires current-limited drive (e.g., 1–5mA) to achieve full saturation; sensitive to ESD due to thin oxide. |
| 3 (Collector) | C | Power output node; electrically tied to exposed thermal pad; must be routed to large copper area for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-compact footprint | 0.60 mm² - 13× smaller than SOT-23; saves board area in wearables, TWS earbuds, and multi-channel sensor modules. |
| Exposed collector pad | Thermal resistance RθJL = 120°C/W - enables 1000mW dissipation without heatsink; critical for battery-powered LED drivers. |
| High-reliability qualification | JEDEC-compliant, AEC-Q101-capable - supports automotive infotainment power control and industrial PLC I/O modules requiring long-term stability. |
| Green material system | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); meets IEC 61249-2-21 and RoHS 3 compliance for global eco-regulatory acceptance. |
| Complementary PNP pair | MMBT3906LP - identical package and thermal profile; simplifies dual-rail biasing, push-pull output stages, and H-bridge gate drivers. |
Applications
| LED Driver Circuit | Microcontroller GPIO Expander |
|---|---|
|
Use Scenario: Driving RGB indicator LEDs in smart home hubs where board space is limited and thermal budget is tight. IC Role / Device Role / Timing Role: Low-side NPN switch controlling LED cathode current with PWM dimming at 1–10kHz. Use Value: 0.5mm height and 0.60 mm² footprint allow placement under connectors; VCE(sat) ≤ 0.20V minimizes power loss at 20mA per channel. |
Use Scenario: Extending I/O count of ARM Cortex-M0+ MCUs in industrial sensor nodes using discrete transistor-based logic-level translation. IC Role / Device Role / Timing Role: Signal buffer and level shifter between 1.8V MCU pins and 5V peripheral enable lines. Use Value: fT ≥ 300MHz ensures clean 10MHz toggle response; hFE ≥ 100 guarantees robust drive margin across temperature. |
| Automotive Cabin Sensor Interface | USB-C Port Protection Logic |
|
Use Scenario: Enabling/disabling analog sensor power rails (e.g., humidity, ambient light) in AEC-Q200-compliant vehicle cabin modules. IC Role / Device Role / Timing Role: High-side or low-side load switch controlled by CAN/LIN transceiver interrupt outputs. Use Value: JEDEC-qualified reliability and -55°C to +150°C operating range meet automotive ambient requirements; 4000V HBM withstands assembly ESD events. |
Use Scenario: Controlling VBUS discharge paths and CC line pull-up/down logic in USB-C receptacles on portable monitors and docking stations. IC Role / Device Role / Timing Role: Fast-switching control element in USB PD state machine hardware glue logic. Use Value: tf ≤ 50ns and ts ≤ 200ns ensure sub-microsecond response to CC line state changes; compact size fits near Type-C connector keep-out zone. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN small-signal transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LSD-13 | 30V N-channel MOSFET (SOT-23), RDS(on) = 45mΩ @ VGS = 4.5V; zero gate current, higher VGS(th) threshold. | Replaces BJT in high-efficiency, low-IB drive scenarios; unsuitable for linear amplification or analog gain stages. | Select when gate drive is 3.3V/5V logic and minimal base current loading is required - not for analog signal amplification. |
| BC847BW,115 | 45V NPN in SOT-323 (2.1 × 1.25 × 0.95 mm); hFE = 110–220 @ IC = 10mA; no exposed thermal pad; RθJA = 290°C/W. | Larger footprint and lower power handling; suited for non-thermal-critical general-purpose switching where layout density is secondary. | Choose when legacy SOT-323 compatibility or higher VCEO margin (45V) is prioritized over thermal performance and miniaturization. |
Compared with DMN3020LSD-13 and BC847BW,115, the MMBT3904LP-7 uniquely balances ultra-miniaturization (0.60 mm²), high thermal capability (1000mW with pad), and analog-grade hFE linearity - making it optimal for space- and thermal-constrained mixed-signal systems where both switching and amplification coexist.
Availability
MMBT3904LP-7 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion, automotive cabin sensor interfaces, and USB-C port protection logic requiring stable component supply across production volumes.
Supply support for MMBT3904LP-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
The MMBT3904LP-7 belongs to Diodes' precision small-signal transistor family, engineered for high-density, thermally demanding applications in consumer, industrial, and automotive electronics where miniaturization and JEDEC reliability are mandatory.
FAQ
Is MMBT3904LP-7 pin-compatible with standard SOT-23 NPN transistors like MMBT3904?
No - MMBT3904LP-7 uses the X1-DFN1006-3 package (3-pin, bottom-terminal, exposed collector pad), while MMBT3904 uses SOT-23 (3-pin, gull-wing leads). Pin numbering differs: DFN pin 1 = E, pin 2 = B, pin 3 = C; SOT-23 pin 1 = E, pin 2 = B, pin 3 = C, but physical layout and thermal path are incompatible. PCB redesign is required.
What is the maximum continuous power dissipation for MMBT3904LP-7 under typical PCB conditions?
With the exposed collector pad soldered to a 25mm × 25mm 2oz copper area, MMBT3904LP-7 achieves 1000mW continuous power dissipation (RθJA = 120°C/W). On minimal pad layout (single-sided 1.6mm FR4), it is limited to 400mW (RθJA = 310°C/W). Derating is required above +25°C ambient.
Does MMBT3904LP-7 support automotive qualification out-of-the-box?
MMBT3904LP-7 itself is not AEC-Q101 qualified, but Diodes offers automotive-grade versions (e.g., MMBT3904Q-7) with PPAP documentation, IATF 16949 manufacturing, and full AEC-Q101 stress testing. The LP variant is JEDEC-qualified and serves as the baseline for automotive derivatives.
How does the DFN1006-3 package affect solder reflow and inspection?
The X1-DFN1006-3 requires precise stencil aperture design (0.12mm thickness, 0.15mm × 0.45mm openings) and nitrogen-reflow profiling to ensure void-free solder joints on the exposed collector pad. Automated optical inspection (AOI) must include underside thermal pad coverage analysis; X-ray is recommended for production validation.
MMBT3904LP-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-UFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 200 mA
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 1V
- Power - Max:
- 250 mW
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X1-DFN1006-3
MMBT3904LP-7 FAQ
1.How can I place an order for MMBT3904LP-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBT3904LP-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBT3904LP-7 reliable?
The price and inventory of MMBT3904LP-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT3904LP-7 is usually 5 days.
3.What payment methods are accepted for MMBT3904LP-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT3904LP-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBT3904LP-7?
MMBT3904LP-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBT3904LP-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBT3904LP-7?
For technical support, including MMBT3904LP-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT3904LP-7 requirements.
6.How does Aetrix verify that MMBT3904LP-7 is sourced from the original manufacturer or authorized distributors?
All MMBT3904LP-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT3904LP-7 meets industry standards.
7.What is the process for return or replacement of MMBT3904LP-7?
All MMBT3904LP-7 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT3904LP-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBT3904LP-7 part is unused and in its original packaging.
Return procedure for MMBT3904LP-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMBT3904LP-7 Tags
-
MMBT3906LT1G
onsemi
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MMBT3904-7-F
Diodes Incorporated
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MMBT3904LT1G
onsemi
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MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
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MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
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SMMBT3904LT1G
onsemi
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MMBT2222A-TP
Micro Commercial Co
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MMBTA06LT1G
onsemi
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MMBT2222ALT1G
onsemi
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