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onsemi MMBT3904LT3

Part No.:
MMBT3904LT3
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
-
Datasheet:
AetrixMMBT3904LT3.pdf
Description:
TRANS NPN 40V 200MA SOT23
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,526

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Product details

Overview

MMBT3904LT3 from onsemi is a general-purpose NPN silicon transistor in SOT-23 package, rated for 40 VCEO, 200 mA continuous collector current, and 300 MHz transition frequency (fT). It delivers low VCE(sat) (0.2 V at IC = 10 mA, IB = 1 mA) and high DC current gain (HFE = 100–300 at IC = 10 mA), commonly used in low-voltage switching and amplification circuits in consumer power supplies and signal conditioning stages.

For engineers reviewing the MMBT3904LT3 datasheet, pinout, applications, or equivalent options, key selection criteria include its SOT-23 footprint compatibility, guaranteed fT ≥ 300 MHz, VCE(sat) ≤ 0.3 V under 50 mA drive, RoHS-compliant Pb-free construction, and AEC-Q101 qualification for automotive-grade reliability validation.

Technical Context

This discrete NPN bipolar junction transistor operates in active, saturation, and cutoff regions with defined small-signal parameters: hfe = 100–400 at 1 kHz, input impedance hie = 1–10 kΩ, output admittance hoe = 1–40 μS, and noise figure ≤ 5.0 dB at 1 kHz with 100 μA collector bias.

Its thermal design supports 225 mW dissipation on FR-5 board (derated 1.8 mW/°C above 25°C) and 300 mW on alumina substrate (derated 2.4 mW/°C), with RJA = 556 °C/W (FR-5) and 417 °C/W (alumina), enabling use in thermally constrained PCB layouts without forced cooling.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 40 V - Maximum safe collector-emitter voltage before breakdown; defines upper rail limit in 3.3 V/5 V/12 V switching applications.
IC (continuous) 200 mA - Continuous DC collector current handling; sufficient for driving LEDs, relays, and small logic-level loads.
fT 300 MHz - Transition frequency at IC = 10 mA, VCE = 20 V; enables stable small-signal amplification up to ~100 MHz with gain margin.
VCE(sat) 0.2 V (typ.) at IC = 10 mA / IB = 1 mA - Low saturation voltage minimizes conduction loss and self-heating in switching mode.
HFE 100–300 at IC = 10 mA - Wide DC current gain range ensures reliable base drive sizing across production lots and temperature extremes.
Cobo 4.0 pF max - Low output capacitance preserves high-frequency response and reduces Miller effect in amplifier stages.

Pinout & Package

SOT-23 (TO-236) surface-mount package: 2.90 mm × 1.30 mm × 1.00 mm body, 1.90 mm lead pitch, JEDEC-standard footprint compatible with automated placement and reflow.

Pin/Terminal Circuit Role Design Meaning
1 - Base Control electrode Receives forward-biased current to turn on transistor; requires series resistor to limit IB and ensure saturation under worst-case HFE.
2 - Emitter Current sink terminal Connected to ground or low-side reference; forms common-emitter configuration with fixed emitter potential for predictable gain.
3 - Collector Output current source Drives load between supply rail and collector; must be decoupled when switching inductive loads to suppress voltage spikes.

Key Features

Feature Design Value
Pb-free, Halogen-free/BFR-free RoHS-compliant construction meets global environmental regulations and eliminates hazardous material handling concerns in manufacturing.
AEC-Q101 qualified Validated for automotive electronics per stress-test requirements including HTOL, TC, and ESD; suitable for under-hood and infotainment modules.
Low VBE(sat) 0.65–0.95 V range at IC = 10–50 mA ensures compatibility with 1.8 V/3.3 V microcontroller GPIOs without level-shifting circuitry.
High fT / low Cibo 300 MHz fT with 8.0 pF max input capacitance supports broadband pre-amplifier and RF detector designs up to VHF band.
Wide TJ range −55°C to +150°C junction operation enables deployment in industrial motor controls and outdoor power electronics without derating.

Applications

LED Driver Circuit Microcontroller Interface

Use Scenario: Driving 20 mA indicator LEDs from 3.3 V GPIO pins in embedded control panels.

IC Role / Device Role / Timing Role: Low-side switch configured in common-emitter mode, controlled by digital output.

Use Value: VCE(sat) ≤ 0.2 V ensures >95% LED forward voltage utilization and minimal power loss at 20 mA.

Use Scenario: Level-shifting and signal inversion between 5 V legacy peripherals and 3.3 V MCU I/O ports.

IC Role / Device Role / Timing Role: Digital inverter with Schmitt-trigger-like hysteresis via base resistor network.

Use Value: HFE ≥ 100 guarantees full saturation with <100 μA base drive, reducing MCU port loading and timing uncertainty.

DC-DC Converter Feedback Audio Pre-amplifier Stage

Use Scenario: Optocoupler-driven error amplifier in isolated flyback converter feedback loop.

IC Role / Device Role / Timing Role: Linear-mode current amplifier translating opto-phototransistor output into precise reference current.

Use Value: hfe = 100–400 and NF ≤ 5.0 dB enable stable closed-loop regulation with <0.5% output ripple sensitivity.

Use Scenario: First-stage gain block in battery-powered portable audio mixer with 10 kΩ source impedance.

IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier biased at IC = 1 mA for optimal noise and linearity trade-off.

Use Value: Input impedance hie = 1–10 kΩ matches typical sensor outputs, while fT ≥ 300 MHz preserves wideband fidelity up to 20 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
PN2222A (ON Semiconductor) TO-92 package, higher VCEO (60 V), lower fT (250 MHz), larger footprint Through-hole assembly, higher-voltage switching (>40 V), less space-constrained boards Select when mechanical mounting or higher breakdown margin is required; not drop-in for SOT-23 layout.
BC846B (Nexperia) SOT-23 package, same pinout, VCEO = 65 V, HFE = 200–450, fT = 100 MHz Higher voltage tolerance and tighter HFE spread, but reduced bandwidth limits RF use cases Choose for improved DC gain consistency and overvoltage headroom where 100 MHz bandwidth suffices.

Compared with PN2222A and BC846B, the MMBT3904LT3 offers superior high-frequency performance (300 MHz vs. ≤250 MHz) and optimized SOT-23 thermal resistance (RJA = 556 °C/W), making it preferred for compact, speed-critical switching and amplification where layout density and bandwidth are prioritized.

Availability

MMBT3904LT3 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller interface logic, DC-DC converter feedback networks, and audio pre-amplifier stages requiring stable component supply, consistent parametric performance, and long-term manufacturability.

Supply support for MMBT3904LT3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The MMBT3904LT3 belongs to onsemi's general-purpose bipolar transistor product line, designed for cost-sensitive, high-volume applications demanding proven reliability, standardized packaging, and broad operating temperature support.

FAQ

What is the maximum junction temperature rating for the MMBT3904LT3?

The MMBT3904LT3 has a specified junction and storage temperature range of −55°C to +150°C. This allows operation in harsh environments such as automotive engine compartments or industrial motor drives. Thermal design must respect the 225 mW power dissipation limit on FR-5 board at 25°C ambient, derated linearly by 1.8 mW/°C above that point to avoid exceeding TJ(max). The MMBT3904LT3 maintains functional integrity across this full range when operated within its absolute maximum ratings.

Is the MMBT3904LT3 pin-compatible with other SOT-23 NPN transistors like the BC847?

The MMBT3904LT3 uses Style 6 pinout (Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector), which matches BC847 variants marked with the same SOT-23 configuration. However, direct substitution requires verification of HFE distribution, VCE(sat), and fT - BC847 typically offers higher gain but lower fT (≈100 MHz). The MMBT3904LT3 is not guaranteed pin-compatible with BC847 variants using Style 7 (Emitter/Base/Collector) or other pinout variants. Always confirm marking diagram and mechanical drawing before replacement.

Does the MMBT3904LT3 support automotive applications?

Yes - the MMBT3904LT3 is AEC-Q101 qualified and PPAP capable, meeting stress-test requirements for automotive electronics including high-temperature operating life, temperature cycling, and electrostatic discharge. Its −55°C to +150°C operating range, Pb-free construction, and robust parametric stability make it suitable for cabin control modules, body electronics, and non-safety-critical ADAS subsystems. The MMBT3904LT3 is explicitly listed in onsemi's automotive-grade transistor portfolio.

What is the typical noise figure of the MMBT3904LT3 in small-signal amplifier configurations?

The MMBT3904LT3 has a maximum noise figure of 5.0 dB at VCE = 5.0 V, IC = 100 μA, RS = 1.0 kΩ, and f = 1.0 kHz. At lower collector currents (e.g., 10–50 μA), NF improves to ~2–3 dB depending on source resistance - ideal for low-noise pre-amplifiers in sensor interfaces. This value is measured under standardized conditions and confirmed in the official onsemi datasheet; actual noise performance in a given MMBT3904LT3 circuit depends on biasing, layout, and external component selection.

Can the MMBT3904LT3 be used in linear (analog) amplifier applications?

Yes - the MMBT3904LT3 supports linear operation with verified small-signal parameters: hfe = 100–400, hie = 1–10 kΩ, hoe = 1–40 μS, and fT ≥ 300 MHz. Its low distortion and stable gain across temperature make it suitable for Class-A audio pre-amplifiers, sensor signal conditioning, and feedback amplifiers. For best linearity, bias the MMBT3904LT3 at IC = 0.1–10 mA with appropriate emitter degeneration and thermal stabilization.

MMBT3904LT3 Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
*
Package/Case:
-
Packaging:
Cut Tape (CT)
Product Status:
Obsolete
Transistor Type:
-
Current - Collector (Ic) (Max):
-
Voltage - Collector Emitter Breakdown (Max):
-
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Power - Max:
-
Frequency - Transition:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

MMBT3904LT3 FAQ

1.How can I place an order for MMBT3904LT3 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT3904LT3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT3904LT3 reliable?

The price and inventory of MMBT3904LT3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT3904LT3 is usually 5 days.

3.What payment methods are accepted for MMBT3904LT3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT3904LT3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT3904LT3?

MMBT3904LT3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT3904LT3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT3904LT3?

For technical support, including MMBT3904LT3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT3904LT3 requirements.

6.How does Aetrix verify that MMBT3904LT3 is sourced from the original manufacturer or authorized distributors?

All MMBT3904LT3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT3904LT3 meets industry standards.

7.What is the process for return or replacement of MMBT3904LT3?

All MMBT3904LT3 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT3904LT3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT3904LT3 part is unused and in its original packaging.

Return procedure for MMBT3904LT3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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