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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Infineon Technologies MMBT3906LT1HTSA1

Name: MMBT3906LT1HTSA1
Brand: Infineon Technologies
SKU: MMBT3906LT1HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MMBT3906LT1HTSA1

Manufacturer:: Infineon Technologies

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBT3906LT1HTSA1.pdf

Description:: TRANS PNP 40V 0.2A PG-SOT23

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Product details

Overview

MMBT3906LT1HTSA1 from ON Semiconductor is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification in low-voltage, medium-current circuits. It features V_CEO = 40 V, I_C = 200 mA, h_FE = 60–300 (at I_C = 100 µA to 100 mA), V_CE(sat) ≤ 0.4 V (at I_C = 50 mA, I_B = 5 mA), and operates up to T_j = 150 °C. It is widely used in discrete logic level shifting, LED driver stages, and power rail control in consumer and industrial PCBs.

For engineers reviewing the MMBT3906LT1HTSA1 datasheet, MMBT3906LT1HTSA1 pinout, MMBT3906LT1HTSA1 application, or MMBT3906LT1HTSA1 equivalent, key selection criteria include verified DC current gain across operating current range, low saturation voltage under defined drive conditions, thermal resistance in SOT-23 package, and AEC-Q101 qualification status for automotive-grade reliability validation.

Technical Context

This PNP BJT operates with emitter-grounded configuration in common-emitter switching mode. Its design supports fast turn-on/turn-off with t_d ≤ 35 ns, t_r ≤ 35 ns, t_stg ≤ 225 ns, and t_f ≤ 75 ns at I_C = 10 mA, enabling use in pulse-width modulation and digital signal routing up to ~10 MHz.

Thermal performance is defined by R_thJS ≤ 240 K/W (SOT-23), with P_tot = 330 mW at T_S ≤ 71 °C. The device exhibits C_cb = 3.5 pF and C_eb = 10 pF at specified bias points, supporting stable high-frequency small-signal behavior without oscillation risk in properly terminated layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	40 V - Maximum allowable collector-emitter voltage before breakdown; sets upper limit for supply rail compatibility in 24 V and lower systems.
I_C	200 mA - Continuous collector current rating; supports driving LEDs, relays, or small MOSFET gates without external heat sinking.
h_FE	60–300 - DC current gain spanning microamp to 100 mA collector currents; enables predictable base drive sizing across wide load ranges.
V_CE(sat)	≤ 0.4 V at I_C = 50 mA, I_B = 5 mA - Low saturation voltage minimizes conduction loss and self-heating in switching applications.
f_T	250 MHz - Transition frequency confirms usable bandwidth for RF pre-driver or high-speed digital interface buffering.
R_thJS	≤ 240 K/W - Junction-to-soldering-point thermal resistance defines maximum power dissipation before exceeding 150 °C junction temperature in SOT-23 footprint.

Pinout & Package

MMBT3906LT1HTSA1 is housed in a standard SOT-23 surface-mount package (JEDEC TO-236AB), with 3 terminals: Emitter (Pin 1), Base (Pin 2), Collector (Pin 3). This compact 2.9 mm × 1.3 mm footprint supports high-density PCB layout and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal for PNP operation	Connected to higher-potential rail (e.g., V_CC) in switch configurations; determines reference point for base drive polarity.
2 (Base)	Control input for minority-carrier injection	Receives negative-going logic or current-limited drive to enable conduction; requires series resistor to limit I_B per h_FE target.
3 (Collector)	Output current path to load	Typically connected to load (e.g., LED cathode or N-channel gate) and pulled toward ground; carries full switched current.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive electronics per stress test requirements including HTOL, TC, and HAST - suitable for under-hood and infotainment subsystems.
Pb-free / RoHS compliant	Meets EU Directive 2011/65/EU; eliminates lead in solderability layer and die attach, supporting environmentally aligned manufacturing.
Low V_CE(sat)	0.25 V typical at I_C = 10 mA, I_B = 1 mA - reduces power loss and improves efficiency in battery-powered load switching.
High h_FE consistency	Min 60 at I_C = 100 µA and min 30 at I_C = 100 mA - ensures reliable turn-on across wide dynamic range without overdesigning base drive.
Fast switching	t_stg ≤ 225 ns, t_f ≤ 75 ns - enables clean edge transitions in PWM dimming and digital signal inversion up to 5 MHz.

Applications

LED Driver Stage

Logic Level Shifter

Use Scenario: Driving 20–100 mA indicator or backlight LEDs from 3.3 V or 5 V MCU GPIO pins.

IC Role / Device Role / Timing Role: PNP switch controlling LED anode connection to V_CC, with base driven low to illuminate.

Use Value: Low V_CE(sat) ensures >95% power delivery to LED; h_FE ≥ 60 allows GPIO-compatible base current (< 2 mA).

Use Scenario: Translating 1.8 V logic outputs to 5 V or 12 V control signals for legacy peripherals.

IC Role / Device Role / Timing Role: Discrete level translator using emitter-follower or common-emitter inverter topology.

Use Value: f_T = 250 MHz and sub-100 ns switching support clean rise/fall times; V_CEO = 40 V accommodates diverse output rails.

Power Rail Enable Switch

Discrete Amplifier Stage

Use Scenario: Enabling/disabling 3.3 V or 5 V auxiliary power domains in portable devices based on system state.

IC Role / Device Role / Timing Role: High-side switch controlling V_OUT to downstream LDO or load, with base controlled by PMIC or MCU.

Use Value: I_C = 200 mA rating supports moderate loads; R_thJS ≤ 240 K/W permits continuous operation without derating below 71 °C board temperature.

Use Scenario: Small-signal pre-amplification of sensor outputs (e.g., thermistor, photodiode) prior to ADC input.

IC Role / Device Role / Timing Role: Common-emitter amplifier with fixed bias or emitter degeneration for gain stability.

Use Value: h_FE variation < 2:1 across 100 µA–10 mA ensures consistent gain; F = 4 dB noise figure preserves SNR in analog front ends.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PN2907A	V_CEO = 60 V, I_C = 600 mA, h_FE = 100–300, TO-92 package	Larger through-hole footprint; higher voltage/current margin but slower switching (t_f ≈ 250 ns)	Select when board space allows TO-92 and higher breakdown or current headroom is required.
BC807-40	V_CEO = 45 V, I_C = 500 mA, h_FE = 250–630, SOT-23 package, no AEC-Q101	Higher h_FE and current rating, but lacks automotive qualification and has higher V_CE(sat) (0.7 V typ)	Prefer for non-automotive high-gain amplification where thermal margin exists and qualification is not mandated.

Compared with PN2907A and BC807-40, MMBT3906LT1HTSA1 offers optimal balance of SOT-23 footprint, AEC-Q101 compliance, low saturation voltage, and validated switching speed - making it the preferred choice for space-constrained automotive and industrial control modules requiring production-grade reliability.

Availability

MMBT3906LT1HTSA1 is available at Aetrix Electronics and suitable for LED driver stages, logic level translation, and power rail enable switching requiring stable component supply, long-term lifecycle assurance, and automotive-grade traceability.

Supply support for MMBT3906LT1HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

MMBT3906LT1HTSA1 belongs to ON Semiconductor's general-purpose bipolar transistor product line, engineered for robustness, consistency, and manufacturability in high-volume consumer, industrial, and automotive electronics.

FAQ

Is MMBT3906LT1HTSA1 pin-compatible with other SOT-23 PNP transistors like BC856 or 2N3906?

Yes - MMBT3906LT1HTSA1 uses standard SOT-23 pinout (Emitter-Base-Collector on Pins 1-2-3), matching BC856, 2N3906, and most JEDEC-compliant SOT-23 PNP transistors. However, electrical parameters differ: h_FE range, V_CE(sat), and f_T must be verified against circuit requirements before substitution.

What is the maximum safe operating temperature for continuous DC operation?

The junction temperature must not exceed 150 °C. At ambient temperatures up to 71 °C, the device delivers full 330 mW power dissipation in SOT-23. Derating begins above 71 °C at –3.3 mW/°C, reaching zero dissipation at 170 °C board temperature - consistent with its R_thJS ≤ 240 K/W specification.

Does MMBT3906LT1HTSA1 support pulsed operation beyond its DC ratings?

Yes - the datasheet provides permissible pulse load curves showing P_tot(max)/P_tot(DC) ratios up to 10× for pulse widths < 100 µs at D ≤ 2%. For example, 3.3 W peak power is allowed for 10 µs pulses, provided average power remains within 330 mW limits and thermal cycling stays within spec.

How does AEC-Q101 qualification impact usage in non-automotive designs?

AEC-Q101 qualification subjects MMBT3906LT1HTSA1 to accelerated stress tests (HTOL, temperature cycling, ESD) beyond standard industrial requirements. This results in tighter parameter distributions, improved early-life failure rates, and extended field reliability - beneficial for any mission-critical or long-lifecycle industrial application, even outside automotive.

MMBT3906LT1HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 200 mA

Voltage - Collector Emitter Breakdown (Max):: 40 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 10mA, 1V

Power - Max:: 330 mW

Frequency - Transition:: 250MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

MMBT3906LT1HTSA1 FAQ

1.How can I place an order for MMBT3906LT1HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT3906LT1HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT3906LT1HTSA1 reliable?

The price and inventory of MMBT3906LT1HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT3906LT1HTSA1 is usually 5 days.

3.What payment methods are accepted for MMBT3906LT1HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT3906LT1HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT3906LT1HTSA1?

MMBT3906LT1HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT3906LT1HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT3906LT1HTSA1?

For technical support, including MMBT3906LT1HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT3906LT1HTSA1 requirements.

6.How does Aetrix verify that MMBT3906LT1HTSA1 is sourced from the original manufacturer or authorized distributors?

All MMBT3906LT1HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT3906LT1HTSA1 meets industry standards.

7.What is the process for return or replacement of MMBT3906LT1HTSA1?

All MMBT3906LT1HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT3906LT1HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT3906LT1HTSA1 part is unused and in its original packaging.

Return procedure for MMBT3906LT1HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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