My Inquiry
My Account
onsemi MMBT3906TT1
- Part No.:
- MMBT3906TT1
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- -
- Datasheet:
-
MMBT3906TT1.pdf
- Description:
- TRANS PNP GP 40V 200MA SC-75
- Quantity:
- Payment:
- Shipping:
Inventory:111,120
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MMBT3906TT1 from onsemi is a PNP silicon general-purpose amplifier transistor in SOT-416/SC-75 package, rated for −40 V VCEO, −200 mA IC, and 300 mW power dissipation on 1.0 × 1.0 inch FR-4 board. It delivers hFE = 100 (at IC = −10 mA), fT = 250 MHz, and VCE(sat) = −0.25 V (IC = −10 mA, IB = −1.0 mA), used in low-power signal amplification and switching circuits.
For engineers reviewing the MMBT3906TT1 datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, thermal derating behavior, small-signal h-parameters, switching timing data, and validated alternative transistors for discrete analog design and board-level replacement.
Technical Context
This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with defined DC gain (hFE) across IC = −0.1 to −100 mA and VCE = −1.0 V. Its fT = 250 MHz and Cibo = 10.0 pF support audio and low-frequency RF amplification up to ~10 MHz.
Thermal performance is specified for two PCB pad conditions: 200 mW @ 25°C (RJA = 600°C/W) on minimum pad, and 300 mW @ 25°C (RJA = 400°C/W) on 1.0 × 1.0 inch pad - enabling layout-aware power handling estimation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −40 V - Maximum allowable collector-emitter voltage before breakdown under open-base condition; defines safe operating voltage headroom in PNP bias networks. |
| IC (max) | −200 mA - Continuous collector current limit; sets upper bound for load drive capability in switching or linear amplifier stages. |
| PD (1.0″ pad) | 300 mW - Total dissipation on standard FR-4 land pattern; determines thermal margin for sustained operation at ambient ≤ +85°C. |
| hFE @ IC = −10 mA | 100 - DC current gain at mid-range bias; enables predictable base drive calculation for saturated switch or Class-A amplifier designs. |
| fT | 250 MHz - Transition frequency where |hfe| = 1; confirms suitability for audio preamps and low-speed digital logic interfacing. |
| VCE(sat) | −0.25 V - Collector-emitter saturation voltage at IC/IB = 10; directly impacts conduction loss and output low-level voltage in switch applications. |
| NF @ 1 kHz | 4.0 dB - Noise figure at 1 kHz with 100 μA collector current; quantifies contribution to system noise floor in sensitive analog front-ends. |
Pinout & Package
SOT-416/SC-75 (Case 463) surface-mount package: 1.60 mm × 0.80 mm × 0.80 mm body, 1.00 mm pitch, 3-terminal configuration with gull-wing leads. Designed for automated placement and reflow soldering on high-density PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control electrode for forward-active and saturation bias; requires current-limited drive to achieve target hFE-based collector current. |
| 2 | Emitter | Common terminal in common-emitter configuration; connected to higher potential rail in PNP applications; carries full load current. |
| 3 | Collector | Output terminal; sinks current from load to ground or lower-potential node; voltage swing limited by VCEO rating. |
Key Features
| Feature | Design Value |
|---|---|
| Pb-Free, Halogen Free/BFR Free | RoHS-compliant construction meets global environmental regulations without compromising thermal or electrical performance. |
| NSV Prefix | Indicates automotive-grade traceability and control change requirements - suitable for AEC-Q101 stress-tested designs when qualified per NSV variant. |
| Low Capacitance | Cobo = 4.5 pF and Cibo = 10.0 pF minimize Miller effect and improve high-frequency stability in amplifier feedback loops. |
| Fast Switching | ts = 225 ns storage time and tf = 75 ns fall time enable reliable operation in <100 kHz digital switching applications. |
Applications
| Audio Pre-amplifier Stage | Level-Shifting Interface |
|---|---|
|
Use Scenario: Amplifying microphone or sensor signals in portable audio devices with single-supply rails. IC Role / Device Role / Timing Role: PNP common-emitter amplifier providing voltage gain and impedance transformation. Use Value: hFE = 100 at −10 mA and NF = 4.0 dB ensure clean signal amplification with minimal added noise in battery-powered systems. |
Use Scenario: Translating logic-high signals from 3.3 V microcontrollers to 5 V or 12 V peripheral enable lines. IC Role / Device Role / Timing Role: Active-low level shifter using saturated PNP switch configuration. Use Value: VCE(sat) = −0.25 V ensures low dropout and tight logic-low voltage compliance across temperature. |
| LED Driver (Low-Side Sink) | Current Mirror Reference |
|
Use Scenario: Driving indicator LEDs in industrial HMIs where emitter connects to supply and collector sinks current to ground. IC Role / Device Role / Timing Role: Low-power constant-current sink with fixed base bias. Use Value: IC = −200 mA rating and 300 mW dissipation allow direct LED drive up to ~100 mA with margin. |
Use Scenario: Building matched current sources in analog ICs or precision sensor conditioning circuits. IC Role / Device Role / Timing Role: One leg of a discrete PNP current mirror pair with matched thermal tracking. Use Value: Tight hFE consistency (60–300) and −65°C to +150°C TJ range support stable mirroring over wide temperature excursions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC807-40LT1G | Higher hFE (250 min), same SOT-23 package but larger footprint (2.9 × 1.3 mm vs. 1.6 × 0.8 mm); VCEO = −45 V. | Requires PCB layout revision due to different package size and pinout; not drop-in compatible. | Select when higher DC gain and voltage margin are prioritized over board space and thermal resistance. |
| PN2907A | TO-92 through-hole package; identical VCEO/IC ratings but higher RJA (~200°C/W); hFE = 100 min at −150 mA. | Not suitable for SMT-only production; incompatible with automated pick-and-place for SC-75 footprints. | Choose only for prototyping, repair, or legacy through-hole systems where reflow compatibility is not required. |
Compared with BC807-40LT1G and PN2907A, the MMBT3906TT1 offers optimal trade-offs for space-constrained SMT designs requiring low RJA (400°C/W), fast switching, and RoHS compliance - while maintaining proven reliability in automotive-qualified NSV variants.
Availability
MMBT3906TT1 is available at Aetrix Electronics and suitable for audio preamplifiers, logic-level translators, LED drivers, and current mirror circuits requiring stable component supply, consistent parametric performance, and long-term manufacturability.
Supply support for MMBT3906TT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The MMBT3906TT1 belongs to onsemi's general-purpose bipolar transistor product line, engineered for cost-effective, high-reliability discrete amplification and switching in space- and power-sensitive applications.
FAQ
What is the maximum continuous collector current for the MMBT3906TT1?
The MMBT3906TT1 has a maximum continuous collector current (IC) of −200 mA at TA = 25°C. Derating applies above 25°C per the thermal characteristics table: 2.4 mW/°C on a 1.0 × 1.0 inch FR-4 pad. This rating ensures safe operation in low-power switching and amplification roles without exceeding junction temperature limits.
Does the MMBT3906TT1 support automotive applications?
Yes - the NSVMMBT3906TT1G variant (ordering part) carries the NSV prefix, indicating compliance with automotive-specific quality and traceability requirements. While the base MMBT3906TT1 is qualified per general reliability standards, the NSV version is intended for AEC-Q101 stress-tested designs where enhanced process control and change management are mandated.
What is the typical DC current gain (hFE) of the MMBT3906TT1 at −10 mA collector current?
The MMBT3906TT1 exhibits a typical hFE of 100 at IC = −10 mA and VCE = −1.0 Vdc. The datasheet specifies a minimum of 60 and maximum of 300 across the full operating range, making the MMBT3906TT1 suitable for designs requiring predictable gain with moderate variation.
Can the MMBT3906TT1 be used in RF amplifier stages?
The MMBT3906TT1 has an fT of 250 MHz, supporting small-signal amplification up to approximately 10–20 MHz with acceptable gain roll-off. It is not optimized for VHF/UHF or broadband RF power amplification but performs reliably in IF stages, audio RF coupling, and low-frequency oscillator circuits where noise and linearity are more critical than ultra-high bandwidth.
What is the thermal resistance (RJA) of the MMBT3906TT1 on a standard PCB layout?
The MMBT3906TT1 achieves RJA = 400°C/W when mounted on a 1.0 × 1.0 inch FR-4 board - the recommended layout for maximum power handling. This value drops to 600°C/W on minimum pad area, so thermal design must align with actual copper pour to avoid exceeding TJ = +150°C under worst-case ambient and power conditions.
MMBT3906TT1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- -
- Current - Collector (Ic) (Max):
- -
- Voltage - Collector Emitter Breakdown (Max):
- -
- Vce Saturation (Max) @ Ib, Ic:
- -
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- -
- Power - Max:
- -
- Frequency - Transition:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
MMBT3906TT1 FAQ
1.How can I place an order for MMBT3906TT1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBT3906TT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBT3906TT1 reliable?
The price and inventory of MMBT3906TT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT3906TT1 is usually 5 days.
3.What payment methods are accepted for MMBT3906TT1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT3906TT1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBT3906TT1?
MMBT3906TT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBT3906TT1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBT3906TT1?
For technical support, including MMBT3906TT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT3906TT1 requirements.
6.How does Aetrix verify that MMBT3906TT1 is sourced from the original manufacturer or authorized distributors?
All MMBT3906TT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT3906TT1 meets industry standards.
7.What is the process for return or replacement of MMBT3906TT1?
All MMBT3906TT1 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT3906TT1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBT3906TT1 part is unused and in its original packaging.
Return procedure for MMBT3906TT1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMBT3906TT1 Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
