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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MMBT4354

Name: MMBT4354
Brand: onsemi
SKU: MMBT4354
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MMBT4354

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBT4354.pdf

Description:: TRANS PNP 60V 0.8A SOT-23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MMBT4354 from ON Semiconductor is a PNP general-purpose bipolar junction transistor (BJT) designed for amplification and switching applications up to 500mA collector current. It features -60V V_CEO/V_CBO, -5.0V V_EBO, -800mA I_C, 350mW power dissipation, and SOT-23 package - commonly used in low-voltage DC-DC converter bias circuits and load-switching stages.

For engineers reviewing the MMBT4354 datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, guaranteed -60V breakdown rating, h_FE range of 25–500 at I_C = -0.1mA to -500mA, thermal resistance R_θJA = 357°C/W, and SOT-23 footprint compatibility with standard pick-and-place equipment.

Technical Context

The MMBT4354 operates as a discrete PNP BJT with fixed emitter-base and collector-base junctions optimized for linear amplification and saturated switching. Its h_FE varies significantly across collector current (25 at -500mA, 500 at -0.1mA), indicating strong current-dependent gain behavior suitable for bias-stable amplifier stages but requiring careful base drive design in switching use.

Switching performance is characterized by 100ns turn-on and 400ns turn-off times under -500mA I_C and -50mA I_B, with V_CE(sat) = -0.50V and V_BE(sat) = -1.1V at that condition - confirming operation in deep saturation with predictable voltage drops for power-stage control logic.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	-60V - Maximum safe collector-emitter reverse voltage before breakdown; defines upper limit for supply rail tolerance in high-side switch configurations.
I_C Continuous	-800mA - Absolute maximum DC collector current; usable up to -500mA per datasheet test conditions with validated gain and saturation performance.
h_FE	25–500 - DC current gain range across I_C = -0.1mA to -500mA; enables both small-signal amplification and medium-current switching with appropriate base bias scaling.
V_CE(sat)	-0.50V @ I_C = -500mA, I_B = -50mA - Confirmed saturation voltage enabling <0.25W conduction loss in switching mode at rated current.
R_θJA	357°C/W - Junction-to-ambient thermal resistance on FR-4 PCB; limits practical continuous power dissipation to ~100mW at +70°C ambient without heatsinking.
Package	SOT-23 - Standard 3-pin surface-mount package with 1.9mm × 1.3mm footprint; compatible with automated assembly and IPC-7351B land patterns.

Pinout & Package

SOT-23 plastic surface-mount package with gull-wing leads; marking "79" on top surface. Dimensions: 2.90mm × 1.30mm × 1.0mm max height. Thermal pad not present; soldered directly to copper pour for thermal management.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input terminal	Receives forward-biased current to enable conduction; requires external current-limiting resistor when driven from logic-level sources.
2 (Emitter)	Current source reference node	Connected to higher potential rail in PNP high-side switch; carries full load current and sets V_BE bias point.
3 (Collector)	Output current path	Delivers controlled current to load; reverse-biased relative to emitter during cutoff; must withstand full supply voltage in off-state.

Key Features

Feature	Design Value
PNP polarity with -60V ratings	Enables high-side switching in negative-rail or dual-supply systems where NPN alternatives require level-shifting circuitry.
Guaranteed h_FE ≥25 at -500mA	Ensures reliable saturation with modest base drive (e.g., 10% I_C), reducing gate-driver complexity in discrete power control stages.
Low V_CE(sat) (-0.50V)	Minimizes conduction loss in battery-powered or thermally constrained applications such as portable LED drivers and sensor interface bias networks.
SOT-23 footprint	Supports high-density PCB layouts and standard reflow profiles; eliminates need for through-hole mounting or custom lead-forming in production.

Applications

DC-DC Converter Bias Network	LED Load Switch
Use Scenario: Providing stable base current to main power transistor in buck converter feedback loop or auxiliary bias rail generation. IC Role / Device Role / Timing Role: Discrete PNP current source controlling gate/base of primary switching FET/BJT. Use Value: -60V V_CEO allows direct connection to 48V input rails; h_FE stability over temperature supports consistent bias current across -40°C to +125°C operating range.	Use Scenario: Enabling/disabling high-current LED strings in automotive interior lighting or industrial status indicators. IC Role / Device Role / Timing Role: Medium-current PNP switch driving LED anode from positive supply while sinking cathode current via microcontroller GPIO. Use Value: V_CE(sat) ≤ -0.50V ensures <250mW dissipation at 500mA, eliminating need for heatsink in sealed enclosures with limited airflow.
Low-Voltage Logic Interface	Relay Driver Stage
Use Scenario: Translating 3.3V/5V microcontroller outputs to drive higher-voltage loads (e.g., 12V solenoids or sensors) with inverted logic polarity. IC Role / Device Role / Timing Role: Inverting level shifter and current amplifier between digital controller and external analog subsystem. Use Value: Verified turn-on/off times (100ns/400ns) support PWM frequencies up to 1MHz without significant duty-cycle distortion in closed-loop control loops.	Use Scenario: Driving relay coils requiring 10–500mA hold current in industrial PLC I/O modules or HVAC control panels. IC Role / Device Role / Timing Role: Final-stage PNP switch providing coil current path from unregulated 24V rail to ground-referenced controller output. Use Value: -800mA I_C rating exceeds typical 100–400mA relay coil requirements, allowing margin for inrush current and long-term reliability at elevated ambient temperatures.

DC-DC Converter Bias Network

LED Load Switch

Use Scenario: Providing stable base current to main power transistor in buck converter feedback loop or auxiliary bias rail generation.

IC Role / Device Role / Timing Role: Discrete PNP current source controlling gate/base of primary switching FET/BJT.

Use Value: -60V V_CEO allows direct connection to 48V input rails; h_FE stability over temperature supports consistent bias current across -40°C to +125°C operating range.

Use Scenario: Enabling/disabling high-current LED strings in automotive interior lighting or industrial status indicators.

IC Role / Device Role / Timing Role: Medium-current PNP switch driving LED anode from positive supply while sinking cathode current via microcontroller GPIO.

Use Value: V_CE(sat) ≤ -0.50V ensures <250mW dissipation at 500mA, eliminating need for heatsink in sealed enclosures with limited airflow.

Low-Voltage Logic Interface

Relay Driver Stage

Use Scenario: Translating 3.3V/5V microcontroller outputs to drive higher-voltage loads (e.g., 12V solenoids or sensors) with inverted logic polarity.

IC Role / Device Role / Timing Role: Inverting level shifter and current amplifier between digital controller and external analog subsystem.

Use Value: Verified turn-on/off times (100ns/400ns) support PWM frequencies up to 1MHz without significant duty-cycle distortion in closed-loop control loops.

Use Scenario: Driving relay coils requiring 10–500mA hold current in industrial PLC I/O modules or HVAC control panels.

IC Role / Device Role / Timing Role: Final-stage PNP switch providing coil current path from unregulated 24V rail to ground-referenced controller output.

Use Value: -800mA I_C rating exceeds typical 100–400mA relay coil requirements, allowing margin for inrush current and long-term reliability at elevated ambient temperatures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching and amplification applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT4403	-40V V_CEO, lower breakdown rating; h_FE min 100 at -150mA vs. MMBT4354's 25 at -500mA	Less suitable for 48V bus applications; better for 12–24V systems where tighter h_FE tolerance is needed	Select MMBT4403 only if system voltage ≤30V and higher minimum h_FE at mid-current is required.
PN2907A	TO-92 package; -60V rating same, but R_θJA ≈ 200°C/W (higher thermal resistance); slower switching (t_off ~500ns)	Not suitable for high-density SMT designs; requires through-hole assembly and larger board area	Choose PN2907A only for prototyping, low-volume through-hole builds, or legacy TO-92 socket compatibility.

Compared with MMBT4403 and PN2907A, the MMBT4354 uniquely balances -60V robustness, SOT-23 compactness, and verified 500mA switching capability - making it optimal for space-constrained, medium-voltage industrial control and power management modules where thermal and layout efficiency are critical.

Availability

MMBT4354 is available at Aetrix Electronics and suitable for DC-DC converter bias networks, LED load switching, low-voltage logic interfaces, and relay driver stages requiring stable component supply and consistent parametric performance across manufacturing lots.

Supply support for MMBT4354 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MMBT4354 belongs to ON Semiconductor's general-purpose discrete transistor product line, engineered for cost-sensitive, high-reliability applications demanding proven PNP switching and amplification performance in standard SMT packages.

FAQ

What is the maximum continuous collector current rating for the MMBT4354?

The MMBT4354 has an absolute maximum continuous collector current (I_C) rating of -800mA at T_A = 25°C. However, datasheet electrical characteristics are validated up to -500mA with specified h_FE, V_CE(sat), and switching times. For reliable long-term operation, derate based on thermal limits: at 70°C ambient, maximum usable I_C drops to approximately -300mA given R_θJA = 357°C/W and PD = 350mW.

Does the MMBT4354 support switching applications, and what are its key timing specs?

Yes, the MMBT4354 is explicitly characterized for switching use. Its datasheet specifies 100ns turn-on time (t_on) and 400ns turn-off time (t_off) under I_C = -500mA, V_CC = -30V, and I_B1 = I_B2 = -50mA. These values confirm suitability for PWM-driven loads up to ~1MHz, provided base drive circuitry delivers adequate peak current and avoids storage-time delays due to minority-carrier saturation.

What is the pin configuration of the MMBT4354 in the SOT-23 package?

The MMBT4354 uses standard SOT-23 pinout: Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector - confirmed by the "1. Base 2. Emitter 3. Collector" notation in the official datasheet and physical marking "79" on the device top. This matches JEDEC MO-215 and is identical to common PNP SOT-23 transistors like MMBT2907A, enabling footprint reuse in layout.

How does the MMBT4354's h_FE vary with collector current, and why does it matter?

The MMBT4354's h_FE ranges from 500 at I_C = -0.1mA down to 25 at I_C = -500mA. This strong inverse relationship means base drive must scale nonlinearly: at low currents, minimal I_B suffices, but at 500mA, ≥20mA I_B is needed for saturation. Designers must verify I_B/I_C ratio across the full operating range to avoid unintended linear-mode operation and thermal runaway.

Is the MMBT4354 RoHS compliant and halogen-free?

Yes, the MMBT4354 is RoHS compliant and halogen-free per ON Semiconductor's product change notices and material declarations. As a Fairchild-integrated part now manufactured under ON Semiconductor's quality system, it meets JESD204B and IEC 61249-2-21 standards. Full compliance documentation, including substance declarations and test reports, is available via ON Semiconductor's website using the MMBT4354 part number.

MMBT4354 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 800 mA

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 500nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 50 @ 10mA, 5V

Power - Max:: 350 mW

Frequency - Transition:: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

MMBT4354 FAQ

1.How can I place an order for MMBT4354 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT4354 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT4354 reliable?

The price and inventory of MMBT4354 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT4354 is usually 5 days.

3.What payment methods are accepted for MMBT4354?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT4354 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT4354?

MMBT4354 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT4354 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT4354?

For technical support, including MMBT4354 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT4354 requirements.

6.How does Aetrix verify that MMBT4354 is sourced from the original manufacturer or authorized distributors?

All MMBT4354 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT4354 meets industry standards.

7.What is the process for return or replacement of MMBT4354?

All MMBT4354 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT4354, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT4354 part is unused and in its original packaging.

Return procedure for MMBT4354:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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