Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Diodes Incorporated MMBT4401-7

Name: MMBT4401-7
Brand: Diodes Incorporated
SKU: MMBT4401-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: MMBT4401-7

Manufacturer:: Diodes Incorporated

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBT4401-7.pdf

Description:: TRANS NPN 40V 0.6A SOT-23-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,174

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

MMBT4401-7 from Diodes Incorporated is a 40V NPN small-signal transistor in SOT23 package, rated for 600mA continuous collector current, 310mW power dissipation, and 250MHz gain-bandwidth product. It serves as a medium-power switching and amplification device in discrete analog and digital interface circuits, commonly used in load switching, signal buffering, and driver stages of consumer and industrial control systems.

For engineers reviewing the MMBT4401-7 datasheet, MMBT4401-7 pinout, MMBT4401-7 application, or MMBT4401-7 equivalent, key selection criteria include V_CEO = 40V, h_FE = 40–300 (at I_C = 1–500mA), V_CE(sat) ≤ 0.75V at 500mA/50mA drive, ESD HBM rating of 4kV, and SOT23 thermal resistance R_θJA = 403°C/W on minimal PCB copper.

Technical Context

The MMBT4401-7 is an epitaxial planar NPN bipolar junction transistor optimized for linear amplification and saturated switching. Its DC current gain spans 40–300 across 100µA–500mA collector currents, with V_BE(sat) ranging from 0.75V to 1.2V depending on operating point. The device supports fast switching with td/tr/ts/tf ≤ 15/20/225/30 ns under defined 30V/150mA conditions.

Thermally, it features R_θJC = 120°C/W and operates from –55°C to +150°C. Its C_cb = 6.5pF and C_eb = 30pF enable stable high-frequency operation up to 250MHz f_T, while its 4kV HBM ESD rating ensures robustness in handling-sensitive assembly environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	40 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration
I_C (continuous)	600 mA - Continuous collector current limit defining usable drive capability in switching applications
P_D	310 mW - Max steady-state power dissipation on standard FR4 board with 1oz copper, limiting thermal headroom
f_T	250 MHz - Gain-bandwidth product indicating usable frequency range for small-signal amplification
h_FE	40–300 - DC current gain range across 100µA–500mA, critical for bias stability and gain predictability
V_CE(sat)	≤0.75 V @ 500mA/50mA - Low saturation voltage enabling efficient switching with minimal conduction loss
ESD HBM	4,000 V - Human-body-model ESD tolerance ensuring reliability during manual handling and PCB assembly

Pinout & Package

Package: SOT23 - Surface-mount plastic package with 3-pin configuration, 0.008g mass, UL 94V-0 flammability rating, and moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Emission terminal for majority carriers	Reference node for biasing; connected to ground or low-impedance return path in common-emitter switches
2 (Base)	Control electrode for carrier injection	Receives current-limited drive signal; requires series resistor to limit I_B ≤ 200mA peak
3 (Collector)	Current collection terminal	Connected to load or supply rail; must remain ≤40V relative to emitter under all operating conditions

Key Features

Feature	Design Value
Epitaxial planar die construction	Enables tight parameter distribution and stable h_FE across temperature (–55°C to +150°C)
Complementary PNP pairing	MMBT4403 provides matched thermal and gain characteristics for push-pull and differential amplifier designs
Lead-free & RoHS 3 compliant	Fully compliant with EU Directive 2015/863/EU; no intentionally added lead, halogen, or antimony
SOT23 thermal performance	R_θJA = 403°C/W enables operation up to +125°C ambient when derated per Figure 1 in datasheet
High-speed switching	225ns storage time and 30ns fall time support >100kHz PWM duty-cycle control in power interface stages

Applications

LED Driver Circuit

Microcontroller GPIO Expander

Use Scenario: Driving 20–100mA indicator or status LEDs from 3.3V/5V logic outputs.

IC Role / Device Role / Timing Role: NPN switch configured in common-emitter mode, sinking current from LED anode to ground.

Use Value: V_CE(sat) ≤ 0.4V at 150mA/15mA ensures <0.06W dissipation and minimal voltage drop across transistor, preserving LED forward voltage margin.

Use Scenario: Extending digital output capability of resource-constrained MCUs for relay, solenoid, or higher-current peripheral control.

IC Role / Device Role / Timing Role: Discrete level-shifting and current-boosting stage between MCU GPIO and external 5–24V loads.

Use Value: 600mA I_C rating and 40–300 h_FE allow reliable 10–50mA base drive to switch 200–500mA loads without active heat sinking.

Audio Signal Amplifier

Power Supply Enable Switch

Use Scenario: Low-noise preamplification of line-level audio signals (e.g., microphone biasing, sensor signal conditioning).

IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier with emitter degeneration for gain stability and bandwidth control.

Use Value: f_T = 250MHz and h_fe = 40–500 support flat gain response up to 20kHz with low distortion in Class-A configurations.

Use Scenario: Enabling/disabling auxiliary power rails (e.g., 3.3V, 5V) in battery-powered or multi-rail embedded systems.

IC Role / Device Role / Timing Role: High-side or low-side enable switch controlling PMOS/NMOS gate drive or LDO EN pin.

Use Value: 4kV HBM ESD rating prevents latch-up during hot-plug events; V_CEO = 40V accommodates 24V system rails with safety margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PN2222A (ON Semiconductor)	V_CEO = 40V, I_C = 800mA, but SOT23 variant (PMBT2222A) has lower f_T (250MHz → 200MHz) and higher V_CE(sat) (0.8V vs. 0.75V)	Same SOT23 footprint; slightly reduced high-frequency gain and higher saturation loss at 500mA	Select when legacy PMBT2222A qualification or dual-source requirement exists; verify f_T margin in RF-coupled stages
BC847BW (Nexperia)	V_CEO = 45V, h_FE = 200–450 (tighter binning), but lower I_C = 100mA continuous and R_θJA = 450°C/W	Not suitable for >150mA switching; preferred for precision biasing and low-current amplification	Choose for high-gain, low-current analog circuits where thermal load is minimal and h_FE consistency is prioritized over power handling

Compared with PN2222A and BC847BW, the MMBT4401-7 delivers superior balance of current drive (600mA), speed (250MHz f_T), and thermal efficiency (R_θJA = 403°C/W), making it optimal for mid-power switching where both gain stability and dissipation headroom matter.

Availability

MMBT4401-7 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion, and audio signal amplification requiring stable component supply, consistent parametric performance, and RoHS-compliant sourcing.

Supply support for MMBT4401-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The MMBT4401-7 belongs to Diodes' broad portfolio of general-purpose bipolar transistors engineered for cost-effective, high-reliability discrete signal conditioning and power interface functions in consumer, industrial, and automotive-qualified systems.

FAQ

What is the maximum allowable collector-emitter voltage for MMBT4401-7 in continuous operation?

The absolute maximum V_CEO is 40V at T_A = +25°C. Derating applies above +25°C: for every 1°C rise, V_CEO decreases by 0.12V. At +125°C ambient, the practical limit drops to approximately 28V. Exceeding this risks avalanche breakdown and irreversible device failure.

Can MMBT4401-7 be used in linear amplifier configurations?

Yes - its h_FE of 40–300 across 100µA–500mA and f_T of 250MHz support Class-A and Class-AB small-signal amplification. However, thermal limits (310mW P_D) constrain quiescent current; typical bias points use I_C ≤ 50mA to maintain junction temperature below 125°C on standard PCBs.

Is MMBT4401-7 pin-compatible with other SOT23 NPN transistors like BC846 or 2N3904?

Yes - all three share the same SOT23 pinout (Emitter-Base-Collector on pins 1-2-3). However, electrical differences exist: BC846 has lower I_C (100mA), and 2N3904 has lower V_CEO (40V same, but lower f_T = 300MHz only at I_C = 10mA). Substitution requires verifying gain, speed, and thermal margins for the target operating point.

Does MMBT4401-7 meet automotive qualification standards?

No - the MMBT4401-7 is not AEC-Q101 qualified. Diodes offers the automotive-grade MMBT4401Q variant, which undergoes additional stress testing (HTOL, TC, ESD) and is documented in a separate datasheet (DS30039Q). For automotive applications, MMBT4401Q must be specified and sourced separately.

MMBT4401-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 40 V

Vce Saturation (Max) @ Ib, Ic:: 750mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 150mA, 1V

Power - Max:: 300 mW

Frequency - Transition:: 250MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

MMBT4401-7 FAQ

1.How can I place an order for MMBT4401-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT4401-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT4401-7 reliable?

The price and inventory of MMBT4401-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT4401-7 is usually 5 days.

3.What payment methods are accepted for MMBT4401-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT4401-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT4401-7?

MMBT4401-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT4401-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT4401-7?

For technical support, including MMBT4401-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT4401-7 requirements.

6.How does Aetrix verify that MMBT4401-7 is sourced from the original manufacturer or authorized distributors?

All MMBT4401-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT4401-7 meets industry standards.

7.What is the process for return or replacement of MMBT4401-7?

All MMBT4401-7 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT4401-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT4401-7 part is unused and in its original packaging.

Return procedure for MMBT4401-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…