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Diodes Incorporated MMBT4401-7-F

Part No.:
MMBT4401-7-F
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixMMBT4401-7-F.pdf
Description:
TRANS NPN 40V 0.6A SOT-23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:696,238

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Product details

Overview

MMBT4401-7-F from Diodes Incorporated is a 40V NPN small-signal transistor in SOT23 package, rated for 600 mA continuous collector current, 310 mW power dissipation, and 250 MHz gain-bandwidth product. It serves as a medium-power switching and amplification device in DC-DC converter bias circuits, LED drivers, and digital logic interface stages.

For engineers reviewing the MMBT4401-7-F datasheet, MMBT4401-7-F pinout, MMBT4401-7-F application, or MMBT4401-7-F equivalent, key selection criteria include VCEO = 40 V, hFE = 40–300 (IC = 1–500 mA), VCE(sat) ≤ 0.75 V at IC = 500 mA/IB = 50 mA, ESD HBM = 4 kV, and SOT23 thermal resistance RθJA = 403 °C/W on minimum pad layout.

Technical Context

This NPN bipolar junction transistor uses epitaxial planar die construction to ensure stable hFE across temperature (–55°C to +150°C) and consistent VCE(sat) performance up to 150°C junction temperature. Its 6.0 V VEBO rating supports reliable base-emitter reverse bias operation in push-pull configurations.

Switching behavior is characterized by td = 15 ns, tr = 20 ns, ts = 225 ns, and tf = 30 ns under VCC = 30 V, enabling use in pulse-width modulation (PWM) control stages operating below 1 MHz. Input capacitance Ceb = 30 pF and output capacitance Ccb = 6.5 pF support predictable high-frequency response in amplifier feedback networks.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO40 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration
IC (continuous)600 mA - Continuous collector current handling capacity at TA = 25°C with derating above 25°C
hFE40–300 - DC current gain range across IC = 1 mA to 500 mA, critical for bias stability in linear amplifiers
VCE(sat)≤ 0.75 V @ IC = 500 mA / IB = 50 mA - Low saturation voltage enables efficient switching in low-voltage load control
fT250 MHz - Unity-gain frequency defining usable bandwidth for RF amplification or high-speed switching
ESD HBM4,000 V - Human-body-model ESD robustness suitable for manual assembly and board-level handling without special precautions
RθJA403 °C/W - Junction-to-ambient thermal resistance on minimal FR4 pad layout, guiding PCB copper area requirements

Pinout & Package

Package: SOT23 - Surface-mount plastic package with 3-pin configuration, 0.008 g mass, UL 94V-0 flammability rating, and matte tin-plated leads solderable per MIL-STD-202 Method 208.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)Current sink terminalLow-impedance return path for collector current; connects to ground or low-side reference in switch applications
2 (Base)Control inputReceives drive current to modulate collector-emitter conduction; requires series resistor to limit IB per hFE target
3 (Collector)Current source terminalDelivers switched or amplified current to load; placed at higher potential than emitter in active/saturation modes

Key Features

FeatureDesign Value
Epitaxial planar die constructionEnables tight parameter distribution and stable hFE over temperature (–55°C to +150°C)
Complementary PNP pairingDirect functional match with MMBT4403 for push-pull and differential amplifier designs
Lead-free & RoHS 3 compliantFully compliant with EU Directive 2015/863/EU; no intentionally added lead, antimony, bromine, or chlorine
Moisture sensitivity levelLevel 1 per J-STD-020 - No floor-life limitation or bake requirement prior to reflow
High ESD robustness4 kV HBM rating reduces risk of field failure during handling and system integration

Applications

LED Driver StageDC-DC Converter Bias Circuit

Use Scenario: Driving discrete LEDs in automotive interior lighting or industrial status indicators requiring 100–500 mA pulsed current.

IC Role / Device Role / Timing Role: NPN switch controlling LED anode current path with PWM duty-cycle modulation.

Use Value: VCE(sat) ≤ 0.75 V minimizes power loss at 500 mA, supporting >95% efficiency in low-voltage (<5 V) LED strings.

Use Scenario: Providing base drive to power MOSFETs or IGBTs in buck/boost controller feedback loops.

IC Role / Device Role / Timing Role: Medium-speed switch translating error-amplifier output into gate-drive enable/disable signals.

Use Value: 225 ns storage time and 30 ns fall time allow clean turn-off transitions up to 500 kHz switching frequencies.

Digital Logic Level ShifterSmall-Signal Amplifier Stage

Use Scenario: Translating 3.3 V microcontroller GPIO outputs to 5 V or 12 V peripheral control lines.

IC Role / Device Role / Timing Role: Common-emitter inverter providing voltage gain and level translation between mixed-supply domains.

Use Value: hFE ≥ 40 at IC = 1 mA ensures reliable saturation with 10 kΩ pull-up, reducing propagation delay vs. MOSFET alternatives.

Use Scenario: Pre-amplifying sensor signals (e.g., thermistor bridges or photodiode currents) before ADC input.

IC Role / Device Role / Timing Role: Common-emitter amplifier with fixed bias network delivering 20–30 dB voltage gain.

Use Value: fT = 250 MHz and hfe = 40–500 support stable gain up to 10 MHz with minimal phase shift in transimpedance configurations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
PN2222AVCEO = 40 V, IC = 800 mA, but SOT23 not standard - typically TO-92 or SOT-23 variants with lower hFE consistencyLimited suitability for high-density SMT layouts due to non-standardized SOT23 footprint and wider hFE spread (35–300)Select when legacy TO-92 compatibility is required; verify thermal performance on SOT23 variant footprints
BC847BVCEO = 45 V, hFE = 200–450 @ IC = 2 mA, but lower IC rating (100 mA continuous) and fT = 100 MHzBetter for low-current signal amplification; unsuitable for >200 mA switching loads due to power dissipation limitsPrefer for precision biasing or low-noise preamp stages where gain linearity matters more than current drive

Compared with PN2222A and BC847B, MMBT4401-7-F delivers superior thermal performance in SOT23 (RθJA = 403 °C/W), tighter hFE control across operating current range, and verified 500 mA switching capability - making it optimal for space-constrained, medium-power digital and analog interfaces.

Availability

MMBT4401-7-F is available at Aetrix Electronics and suitable for LED driver stages, DC-DC converter bias circuits, and digital logic level shifters requiring stable component supply, full RoHS 3 compliance, and SOT23 footprint consistency.

Supply support for MMBT4401-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, industry-qualified components for automotive, industrial, and consumer applications.

The MMBT4401 belongs to Diodes' general-purpose small-signal transistor product line, engineered for cost-effective, high-yield SMT deployment in power management, signal conditioning, and interface circuits where thermal robustness and parametric consistency are essential.

FAQ

What is the maximum allowable junction temperature for MMBT4401-7-F?

The absolute maximum junction temperature is +150°C, with continuous operation supported from –55°C to +150°C. Derating begins at +25°C ambient: power dissipation drops linearly to zero at +150°C case temperature when mounted on minimum recommended FR4 pad layout (RθJA = 403 °C/W).

Is MMBT4401-7-F suitable for automotive applications?

The standard MMBT4401-7-F is not AEC-Q101 qualified. Diodes offers the automotive-compliant MMBT4401Q variant, which undergoes additional stress testing and is documented in a separate datasheet (DS30039Q). Use MMBT4401Q for under-hood or safety-critical vehicle systems.

How does the SOT23 marking "K2X" decode?

"K2X" is the top-side product type marking code. "K2" identifies the MMBT4401 device; "X" is the year code for 2025 per Diodes' date code system. Full date codes combine this with a month letter (e.g., "K2X9" = September 2025), visible under magnification on the package top surface.

Can MMBT4401-7-F replace BC817-40 in existing designs?

Yes, with verification: both are SOT23 NPN transistors with VCEO ≥ 45 V and hFE ≥ 250 @ IC = 100 mA. However, MMBT4401-7-F has higher IC (600 mA vs. 500 mA) and lower VCE(sat) (0.75 V vs. 0.7 V typical), requiring review of base drive strength and thermal margin in high-duty-cycle operation.

MMBT4401-7-F Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
600 mA
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
750mV @ 50mA, 500mA
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 1V
Power - Max:
310 mW
Frequency - Transition:
250MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

MMBT4401-7-F FAQ

1.How can I place an order for MMBT4401-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT4401-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT4401-7-F reliable?

The price and inventory of MMBT4401-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT4401-7-F is usually 5 days.

3.What payment methods are accepted for MMBT4401-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT4401-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT4401-7-F?

MMBT4401-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT4401-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT4401-7-F?

For technical support, including MMBT4401-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT4401-7-F requirements.

6.How does Aetrix verify that MMBT4401-7-F is sourced from the original manufacturer or authorized distributors?

All MMBT4401-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT4401-7-F meets industry standards.

7.What is the process for return or replacement of MMBT4401-7-F?

All MMBT4401-7-F units undergo pre-shipment inspection (PSI). If there is an issue with MMBT4401-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT4401-7-F part is unused and in its original packaging.

Return procedure for MMBT4401-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MMBT4401-7-F Tags

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