onsemi MMBT4401M3T5G

Overview

MMBT4401M3T5G from onsemi is an NPN bipolar junction transistor designed for general-purpose low-power switching applications in space-constrained PCB layouts. It features a 40 V_CEO, 600 mA continuous collector current, 250 MHz transition frequency, SOT-723 package (1.20 × 0.80 × 0.50 mm), and operates across −55 °C to +150 °C junction temperature range - ideal for compact consumer and industrial control circuits.

For engineers reviewing the MMBT4401M3T5G datasheet, pinout, applications, or equivalent options, key selection criteria include its SOT-723 footprint compatibility, V_CE(sat) ≤ 0.75 V at I_C = 500 mA/I_B = 50 mA, h_FE = 40–300 (I_C = 0.1–500 mA), thermal resistance of 195 °C/W on alumina substrate, and RoHS-compliant Pb-free construction.

Technical Context

The MMBT4401M3T5G is a discrete silicon NPN BJT optimized for fast-switching operation with 15 ns delay time, 20 ns rise time, 225 ns storage time, and 30 ns fall time under specified test conditions (V_CC = 30 V, I_C = 150 mA, I_B1 = I_B2 = 15 mA). Its f_T = 250 MHz supports high-speed digital switching up to ~100 MHz duty-cycle-limited signals.

It delivers stable DC current gain across wide collector current range (h_FE ≥ 20 at I_C = 0.1 mA; ≥ 40 at I_C = 1 mA; ≥ 80 at I_C = 10 mA; ≥ 100 at I_C = 150 mA), with V_BE(sat) = 0.75–0.95 V and V_CE(sat) = 0.4–0.75 V depending on drive level - enabling efficient saturation in low-voltage logic-driven switches.

Key Specifications

Pinout & Package

MMBT4401M3T5G is housed in the SOT-723 surface-mount package (Case 631AA, 1.20 × 0.80 × 0.50 mm, 0.40 mm pitch), offering 40% smaller footprint than SOT-23 while maintaining robust thermal performance on alumina substrates.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Compared with MMBT4401LT1G and DXT4401TC-7-F, the MMBT4401M3T5G uniquely balances ultra-small size (SOT-723), superior thermal performance on alumina (640 mW), and industry-standard pinout - making it optimal for next-generation space- and thermally-critical switching nodes.

Availability

MMBT4401M3T5G is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion, and low-voltage relay control requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for MMBT4401M3T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and IoT markets.

The MMBT4401M3T5G belongs to onsemi's general-purpose bipolar transistor product line, engineered specifically for high-density, low-power switching in portable and space-constrained electronic systems.

FAQ

What is the maximum continuous collector current rating for the MMBT4401M3T5G?

The MMBT4401M3T5G has a maximum continuous collector current (I_C) rating of 600 mA at T_A = 25 °C. This rating assumes proper PCB thermal management - on FR-5 board it supports 265 mW, while on alumina substrate it supports up to 640 mW, allowing full 600 mA operation within thermal limits when adequately heatsinked.

Is the MMBT4401M3T5G pin-compatible with the standard SOT-23 version MMBT4401LT1G?

No, the MMBT4401M3T5G uses the SOT-723 package with 1.20 × 0.80 mm footprint and 0.40 mm lead pitch, whereas the MMBT4401LT1G uses the larger SOT-23 (2.9 × 1.3 mm, 0.95 mm pitch). Pin numbering is identical (1=Base, 2=Emitter, 3=Collector), but physical placement and solder pad layout are not interchangeable without PCB redesign.

What is the typical V_CE(sat) of the MMBT4401M3T5G at I_C = 150 mA?

The typical V_CE(sat) of the MMBT4401M3T5G at I_C = 150 mA and I_B = 15 mA is 0.4 V, with a maximum of 0.75 V under those conditions. This low saturation voltage ensures minimal power loss and heat generation in high-duty-cycle switching applications such as PWM LED dimming or relay control.

Does the MMBT4401M3T5G meet RoHS and halogen-free requirements?

Yes, the MMBT4401M3T5G is explicitly marked Pb-free, halogen-free, and BFR-free in its official datasheet and complies fully with the EU RoHS Directive 2011/65/EU. The "G" suffix denotes RoHS-compliant packaging, and no lead, bromine, chlorine, or fluorine-based flame retardants are used in its construction.

What is the transition frequency (f_T) specification for the MMBT4401M3T5G?

The MMBT4401M3T5G has a minimum transition frequency (f_T) of 250 MHz, measured at I_C = 20 mA, V_CE = 10 V, and f = 100 MHz. This high f_T confirms its suitability for fast digital switching, including clock buffering, pulse shaping, and high-frequency signal routing in compact embedded systems.