Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated MMBT4403-7

Part No.:
MMBT4403-7
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixMMBT4403-7.pdf
Description:
TRANS PNP 40V 0.6A SOT-23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,116

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MMBT4403-7 from Diodes Incorporated is a 40V PNP small-signal transistor in SOT23 package, rated for -600 mA continuous collector current and 310 mW power dissipation at TA = +25°C. It delivers DC current gain (hFE) of 30–300 across IC = -100 µA to -500 mA, with VCE(sat) ≤ -0.75 V at IC = -500 mA/IB = -50 mA, and fT = 200 MHz. It serves as a medium-power switching and amplification device in bias networks, level shifters, and discrete logic interfaces.

For engineers reviewing the MMBT4403-7 datasheet, MMBT4403-7 pinout, MMBT4403-7 application, or MMBT4403-7 equivalent, key selection considerations include its complementary pairing with MMBT4401, SOT23 thermal resistance (RθJA = 403 °C/W on minimum pad layout), safe operating area limits, and automotive-grade qualification readiness via AEC-Q101.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with verified breakdown ratings: VCBO = -40 V, VCEO = -40 V, VEBO = -6 V. Its hfe ranges from 60 to 500 at IC = -1mA and -20mA, supporting high-gain analog amplification and fast digital switching.

Switching performance is characterized by td ≤ 15 ns, tr ≤ 20 ns, ts ≤ 225 ns, and tf ≤ 30 ns under VCC = -30 V, IC = -150 mA conditions. Small-signal parameters include Cobo = 8.5 pF, Cibo = 30 pF, and hie = 1.5–15 kΩ, enabling stable operation in RF-coupled and broadband amplifier stages up to ~100 MHz.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO -40 V - Maximum allowable collector-emitter voltage before avalanche breakdown; defines safe DC rail margin in negative-rail switching circuits.
IC (cont.) -600 mA - Continuous collector current rating; sets maximum load drive capability in linear regulators or driver stages.
PD 310 mW - Max power dissipation on minimum FR4 pad layout; determines thermal derating slope (0.77 mW/°C above 25°C).
hFE @ IC = -10 mA 100 - Confirmed DC current gain at mid-range bias; enables predictable base drive sizing for saturated switch design.
fT 200 MHz - Transition frequency at VCE = -10 V, IC = -20 mA; supports amplification and switching up to VHF band edge.
VCE(sat) @ IC = -500 mA -0.75 V - Saturation voltage at high-current switching; directly impacts conduction loss and thermal rise in power control paths.
ts 225 ns - Storage time during turn-off; critical for minimizing switching losses in pulse-width modulated (PWM) loads.

Pinout & Package

Package: SOT23 - Surface-mount plastic package with 3-pin configuration, 0.008 g mass, UL 94V-0 flammability rating, and matte tin-plated leads solderable per MIL-STD-202 Method 208.

Pin/Terminal Circuit Role Design Meaning
1 (Emitter) Current source terminal for PNP operation Connected to higher potential node; base-emitter forward bias initiates conduction; requires proper voltage referencing in bias networks.
2 (Base) Control input for minority-carrier injection Drives transistor into saturation or cutoff; IB = -50 mA required for full turn-on at IC = -500 mA; sensitive to ESD due to thin oxide layer.
3 (Collector) Current sink terminal Connected to load and supply return; carries full switched current; thermal path to PCB via lead (RθJL = 350 °C/W) dominates cooling in SOT23 layout.

Key Features

Feature Design Value
Complementary NPN pairing MMBT4401 listed as direct complementary type-enables matched push-pull stage design with consistent gain and switching timing.
Lead-free & green compliance Fully RoHS 3 compliant (<900 ppm Br/Cl, <1000 ppm Sb); meets automotive change-control requirements when qualified per AEC-Q101.
Thermal robustness RθJC = 55 °C/W and RθJL = 350 °C/W enable reliable operation up to TJ = +150°C with appropriate PCB copper area.
High-speed switching ts ≤ 225 ns and tf ≤ 30 ns support PWM frequencies >100 kHz in DC-DC feedback loops and motor gate drivers.

Applications

LED Driver Stage Level Shifter Interface

Use Scenario: Driving high-brightness LEDs from 3.3 V or 5 V microcontroller GPIOs with current limiting.

IC Role / Device Role / Timing Role: PNP switch sinking LED cathode current while isolating MCU I/O from load transients.

Use Value: VCE(sat) ≤ -0.75 V at -500 mA ensures <0.8 V drop across transistor, preserving ≥4.2 V headroom for 5 V LED strings.

Use Scenario: Translating logic signals between 1.8 V FPGA I/O and 5 V legacy peripherals.

IC Role / Device Role / Timing Role: Active-low level shifter using emitter-follower or common-emitter inversion topology.

Use Value: hFE ≥ 100 at -10 mA enables clean signal translation with <10 ns propagation delay and minimal duty-cycle distortion.

Load Switch Control Audio Preamp Bias Network

Use Scenario: Enabling/disabling 12 V sensor modules or CAN transceivers in battery-powered industrial nodes.

IC Role / Device Role / Timing Role: High-side load switch controlled by low-voltage MCU output through base resistor network.

Use Value: BVCEO = -40 V provides 3× safety margin over 12 V rail; RθJA = 403 °C/W allows 300 mW operation without heatsink on 1 oz copper.

Use Scenario: Setting quiescent bias point in Class-A audio preamplifier stages for MEMS microphones or piezo sensors.

IC Role / Device Role / Timing Role: Current source/sink element stabilizing emitter degeneration resistors in differential pairs.

Use Value: hFE consistency (±20% across -1 mA to -10 mA) ensures repeatable DC operating point; Cobo = 8.5 pF minimizes high-frequency signal leakage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
PN2907A TO-92 package, lower fT (100 MHz), higher VCE(sat) (-1.6 V @ -500 mA) Through-hole assembly only; unsuitable for high-density SMT layouts or >100 kHz switching Select when legacy through-hole compatibility or higher voltage margin (VCEO = -60 V) is prioritized over speed and size.
BC807-40 SOT23 package, comparable hFE (250 min), but lower IC rating (-500 mA) and PD (300 mW) Marginally lower thermal capacity; may require derating above 85°C ambient in sealed enclosures Choose when tighter hFE distribution (40× gain bin) and proven AEC-Q101 qualification are required for automotive body electronics.

Compared with PN2907A and BC807-40, MMBT4403-7 offers superior switching speed (200 MHz fT vs. 100/150 MHz), optimized SOT23 thermal path (RθJL = 350 °C/W), and balanced gain-bandwidth trade-off for space-constrained, medium-frequency control circuits.

Availability

MMBT4403-7 is available at Aetrix Electronics and suitable for LED driver stages, level shifter interfaces, and load switch control requiring stable component supply in high-volume industrial and automotive electronics programs.

Supply support for MMBT4403-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The MMBT4403-7 belongs to Diodes' general-purpose bipolar transistor product line, engineered for cost-sensitive, high-reliability medium-power switching and amplification in consumer, industrial, and automotive systems.

FAQ

What is the maximum operating temperature for MMBT4403-7?

The MMBT4403-7 has an operating junction temperature range of -55°C to +150°C. At ambient temperatures above 25°C, power dissipation must be linearly derated at 0.77 mW/°C based on RθJA = 403 °C/W for minimum pad layout. Full-rated 310 mW applies only at TA = +25°C.

Is MMBT4403-7 qualified for automotive use?

MMBT4403-7 is not pre-qualified to AEC-Q101 in standard form, but Diodes Incorporated offers automotive-grade versions (e.g., MMBT4403Q-7-F) manufactured in IATF 16949-certified facilities with PPAP documentation and change control. Standard MMBT4403-7 supports automotive prototyping where qualification is pending.

How does MMBT4403-7 compare to MMBT4401 in circuit design?

MMBT4403-7 (PNP) and MMBT4401 (NPN) share identical SOT23 package, voltage ratings (40 V), and thermal characteristics, but differ in polarity, gain profile, and saturation behavior. They are designed as complementary pairs for push-pull outputs, H-bridge drivers, and differential amplifiers requiring matched dynamic response.

Can MMBT4403-7 replace BC857 in existing designs?

Yes, MMBT4403-7 is a functional replacement for BC857 with identical SOT23 pinout (E-B-C), comparable VCEO (-45 V vs. -40 V), and overlapping hFE (110–800 vs. 30–300). However, BC857 has higher fT (300 MHz) and lower VCE(sat) (-0.3 V), so verify switching speed and conduction loss margins in high-frequency or low-drop applications.

MMBT4403-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Transistor Type:
PNP
Current - Collector (Ic) (Max):
600 mA
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
750mV @ 50mA, 500mA
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 2V
Power - Max:
300 mW
Frequency - Transition:
200MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

MMBT4403-7 FAQ

1.How can I place an order for MMBT4403-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT4403-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT4403-7 reliable?

The price and inventory of MMBT4403-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT4403-7 is usually 5 days.

3.What payment methods are accepted for MMBT4403-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT4403-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT4403-7?

MMBT4403-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT4403-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT4403-7?

For technical support, including MMBT4403-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT4403-7 requirements.

6.How does Aetrix verify that MMBT4403-7 is sourced from the original manufacturer or authorized distributors?

All MMBT4403-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT4403-7 meets industry standards.

7.What is the process for return or replacement of MMBT4403-7?

All MMBT4403-7 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT4403-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT4403-7 part is unused and in its original packaging.

Return procedure for MMBT4403-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MMBT4403-7 Tags

  • MMBT4403-7
  • MMBT4403-7 PDF
  • MMBT4403-7 Datasheet
  • MMBT4403-7 Specifications
  • MMBT4403-7 Images
  • Diodes Incorporated
  • Diodes Incorporated MMBT4403-7
  • Buy MMBT4403-7
  • MMBT4403-7 Price
  • MMBT4403-7 Distributor
  • MMBT4403-7 Supplier
  • MMBT4403-7 Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER