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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MMBT4403LT3

Name: MMBT4403LT3
Brand: onsemi
SKU: MMBT4403LT3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MMBT4403LT3

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBT4403LT3.pdf

Description:: TRANS PNP 40V 0.6A SOT23-3

Quantity:: RFQ Add To RFQ list

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Inventory:8,008

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Product details

Overview

MMBT4403LT3 from onsemi is a PNP silicon switching transistor in SOT-23 package, rated for −40 V V_CEO, −600 mA continuous collector current, and 200 MHz f_T, optimized for low-power digital switching in portable power management and signal inversion circuits.

For engineers reviewing the MMBT4403LT3 datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed V_CE(sat) ≤ −0.75 V at I_C = −500 mA/I_B = −50 mA, h_FE ≥ 20 at high-current switching, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This discrete PNP bipolar junction transistor operates in saturation/active modes for digital logic-level switching and analog amplification. Its design emphasizes fast turn-off (t_s ≤ 225 ns) and low base drive requirements, with V_BE(sat) ≤ −0.95 V at I_C = −500 mA to reduce driver-stage loading.

Thermal performance is defined for both FR-5 (R_JA = 556 °C/W) and alumina substrates (R_JA = 417 °C/W), supporting operation from −55 °C to +150 °C junction temperature. The device exhibits C_cb = 8.5 pF and C_eb = 30 pF at specified bias conditions, enabling predictable high-frequency behavior up to 200 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−40 V - Maximum safe collector-emitter voltage before breakdown under open-base condition
I_C (continuous)	−600 mA - Continuous DC collector current capability without thermal derating at 25°C ambient
f_T	200 MHz - Current-gain bandwidth product defining usable small-signal amplification range
V_CE(sat)	≤ −0.75 V @ I_C = −500 mA, I_B = −50 mA - Low saturation voltage ensures minimal power loss in switch-on state
h_FE	20–300 - DC current gain range across operating currents, supporting stable biasing from microamps to 500 mA
t_s	≤ 225 ns - Storage time limiting turn-off delay in saturated switching applications
R_JA (FR-5)	556 °C/W - Thermal resistance defining junction-to-ambient temperature rise per watt dissipated on standard PCB

Pinout & Package

SOT-23 (TO-236) surface-mount package, 2.90 × 1.30 × 1.00 mm body size, 1.90 mm lead pitch, Pb-free and RoHS compliant.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Current-controlled input terminal; requires −15 mA to switch −150 mA load reliably
2	Emiter	Common emitter node; connected to higher potential rail in PNP switching configuration
3	Collector	Output terminal; sinks current to ground or lower-potential node when active

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive electronics use with PPAP documentation support
V_BE(sat) ≤ −0.95 V	Reduces base drive power and enables direct interfacing with 3.3 V logic outputs
C_eb = 30 pF	Enables predictable input capacitance in high-speed switching nodes and oscillator feedback paths
−55 °C to +150 °C T_J	Supports operation in harsh environments including engine control units and industrial motor drives
Pb-free / Halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1 moisture sensitivity

Applications

Automotive Door Module Control	Portable Device Power Sequencing
Use Scenario: Driving window lift relay coils and LED status indicators in door control units. IC Role / Device Role / Timing Role: PNP switch controlling 12 V loads using microcontroller GPIO with active-low logic. Use Value: Guaranteed V_CE(sat) ≤ −0.75 V at −500 mA ensures < 375 mW conduction loss, minimizing thermal stress in sealed modules.	Use Scenario: Enabling/disabling LDO regulators and USB port power in smartphones and wearables. IC Role / Device Role / Timing Role: Low-side or high-side load switch managing power domain sequencing during boot-up and sleep transitions. Use Value: 225 ns storage time enables clean, glitch-free power rail transitions synchronized with PMIC timing signals.
Industrial Sensor Signal Inversion	Consumer Audio Bias Switching
Use Scenario: Converting NPN sensor output (open-collector) to active-high logic level for MCU input. IC Role / Device Role / Timing Role: Level-shifting inverter stage with h_FE ≥ 100 at 1 mA ensuring robust noise margin. Use Value: C_cb = 8.5 pF limits capacitive coupling into sensitive analog sensor lines, preserving signal integrity.	Use Scenario: Enabling Class AB amplifier bias networks in battery-powered headphones and speakers. IC Role / Device Role / Timing Role: Precision current source/sink switch controlling quiescent current in output stage bias circuits. Use Value: Tight h_FE distribution (20–300) allows predictable bias current setting across production lots without trimming.

Automotive Door Module Control

Portable Device Power Sequencing

Use Scenario: Driving window lift relay coils and LED status indicators in door control units.

IC Role / Device Role / Timing Role: PNP switch controlling 12 V loads using microcontroller GPIO with active-low logic.

Use Value: Guaranteed V_CE(sat) ≤ −0.75 V at −500 mA ensures < 375 mW conduction loss, minimizing thermal stress in sealed modules.

Use Scenario: Enabling/disabling LDO regulators and USB port power in smartphones and wearables.

IC Role / Device Role / Timing Role: Low-side or high-side load switch managing power domain sequencing during boot-up and sleep transitions.

Use Value: 225 ns storage time enables clean, glitch-free power rail transitions synchronized with PMIC timing signals.

Industrial Sensor Signal Inversion

Consumer Audio Bias Switching

Use Scenario: Converting NPN sensor output (open-collector) to active-high logic level for MCU input.

IC Role / Device Role / Timing Role: Level-shifting inverter stage with h_FE ≥ 100 at 1 mA ensuring robust noise margin.

Use Value: C_cb = 8.5 pF limits capacitive coupling into sensitive analog sensor lines, preserving signal integrity.

Use Scenario: Enabling Class AB amplifier bias networks in battery-powered headphones and speakers.

IC Role / Device Role / Timing Role: Precision current source/sink switch controlling quiescent current in output stage bias circuits.

Use Value: Tight h_FE distribution (20–300) allows predictable bias current setting across production lots without trimming.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC807-40LT1G	Higher h_FE (min 250), same V_CEO/I_C, slightly higher V_CE(sat) (−0.7 V @ −500 mA)	Better for linear amplification; less optimal for high-speed saturated switching due to longer t_s	Select when higher DC gain stability at low currents is prioritized over switching speed
PN2907A	TO-92 package, lower f_T (100 MHz), higher R_JA (625 °C/W), non-AEC-Q101	Not suitable for space-constrained or automotive designs; limited to through-hole prototyping and legacy systems	Choose only for cost-sensitive, non-automotive, non-SMT applications where board real estate is not constrained

Compared with BC807-40LT1G and PN2907A, the MMBT4403LT3 delivers superior switching speed (t_s ≤ 225 ns) and automotive qualification while maintaining identical SOT-23 footprint-enabling drop-in replacement in AEC-Q101-compliant designs requiring fast, reliable PNP switching.

Availability

MMBT4403LT3 is available at Aetrix Electronics and suitable for automotive body electronics, portable power management, industrial sensor interfaces, and consumer audio subsystems requiring stable component supply and long-term lifecycle support.

Supply support for MMBT4403LT3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MMBT4403LT3 belongs to onsemi's general-purpose bipolar transistor family designed for high-reliability, low-cost switching and amplification in space-constrained, thermally demanding applications.

FAQ

What is the maximum junction temperature rating for the MMBT4403LT3?

The MMBT4403LT3 has a specified junction and storage temperature range of −55 °C to +150 °C. This rating is validated per JEDEC JESD22-A108 and supports operation in under-hood automotive environments and industrial enclosures without forced cooling, provided thermal design respects the 556 °C/W R_JA limit on FR-5 boards.

Is the MMBT4403LT3 pin-compatible with the MMBT4401LT3?

No-the MMBT4403LT3 is a PNP transistor with Base-Emitter-Collector pinout (Style 6), while the MMBT4401LT3 is an NPN device with Emitter-Base-Collector pinout (Style 7). Swapping them without circuit redesign will result in non-functional or damaged operation; they are functional complements, not pin-compatible replacements.

Does the MMBT4403LT3 require external base resistors in typical switching applications?

Yes-base current must be limited to prevent damage and ensure saturation. For example, driving a −150 mA load with h_FE ≥ 100 requires ≥ −1.5 mA base current; with a 3.3 V GPIO and −0.75 V V_BE(sat), a 1.6 kΩ series resistor provides appropriate bias while accounting for voltage drop and margin.

What packaging options are available for the MMBT4403LT3?

The MMBT4403LT3 is supplied in tape-and-reel format only: 10,000 units per reel (SOT-23, Pb-free). It is not offered in cut-tape, tray, or tube packaging. Reel orientation follows EIA-481-D standards, with devices placed cavity-up and sprocket holes aligned per onsemi BRD8011/D specification.

How does the MMBT4403LT3 perform in low-noise amplifier configurations?

The MMBT4403LT3 is not optimized for low-noise amplification: its noise figure is unspecified in the datasheet, and its h_fe variation (20–300) and C_eb = 30 pF make it unsuitable for RF or precision audio preamp stages. It is engineered for switching-not low-noise linear operation-and should be replaced with dedicated low-noise transistors like the NSS40301MR6T1 for such roles.

MMBT4403LT3 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 40 V

Vce Saturation (Max) @ Ib, Ic:: 750mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 150mA, 2V

Power - Max:: 300 mW

Frequency - Transition:: 200MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

MMBT4403LT3 FAQ

1.How can I place an order for MMBT4403LT3 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT4403LT3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT4403LT3 reliable?

The price and inventory of MMBT4403LT3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT4403LT3 is usually 5 days.

3.What payment methods are accepted for MMBT4403LT3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT4403LT3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT4403LT3?

MMBT4403LT3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT4403LT3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT4403LT3?

For technical support, including MMBT4403LT3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT4403LT3 requirements.

6.How does Aetrix verify that MMBT4403LT3 is sourced from the original manufacturer or authorized distributors?

All MMBT4403LT3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT4403LT3 meets industry standards.

7.What is the process for return or replacement of MMBT4403LT3?

All MMBT4403LT3 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT4403LT3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT4403LT3 part is unused and in its original packaging.

Return procedure for MMBT4403LT3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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