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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MMBT5087

Name: MMBT5087
Brand: onsemi
SKU: MMBT5087
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MMBT5087

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBT5087.pdf

Description:: TRANS PNP 50V 0.1A SOT-23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MMBT5087 from ON Semiconductor is a PNP general-purpose amplifier optimized for low-level, high-gain, low-noise applications up to 50 mA collector current. It features -50 V V_CEO, -100 mA I_C, 250 minimum h_FE at -1.0 mA, -0.3 V V_CE(sat), and 40 MHz f_T, and is commonly used in audio preamplifier stages and sensor signal conditioning circuits.

For engineers reviewing the MMBT5087 datasheet, pinout, applications, or equivalent options, key selection criteria include its SOT-23 package footprint, PNP polarity, noise figure of 2.0 dB (at I_C = -20 µA, R_S = 10 kΩ), and guaranteed h_FE range distinguishing it from the 2N5086 variant.

Technical Context

The MMBT5087 operates as a silicon PNP bipolar junction transistor with fixed-emitter biasing capability and is characterized for linear amplification-not switching-under low-current, low-voltage conditions. Its design emphasizes noise performance and gain stability across -40°C to +125°C ambient temperatures, with validated h_FE ≥ 250 at -1.0 mA and -5.0 V V_CE.

Thermal performance is specified for SOT-23 mounting on FR-4 PCB (1.6″ × 1.6″ × 0.06″), delivering 350 mW P_D at 25°C and 2.8 mW/°C derating above that temperature. Junction-to-ambient thermal resistance is 357°C/W, confirming suitability for space-constrained analog front-ends where self-heating must remain below critical thresholds.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	-50 V - Maximum safe collector-emitter reverse voltage before breakdown in common-emitter configuration
I_C (max)	-100 mA - Continuous collector current limit defining upper operating boundary for linear amplification
h_FE (min)	250 @ I_C = -1.0 mA, V_CE = -5.0 V - Minimum DC current gain ensuring predictable bias point stability in low-current preamp designs
f_T	40 MHz - Unity-gain bandwidth enabling stable small-signal amplification up to audio and low-RF frequencies
NF	2.0 dB @ I_C = -20 µA, R_S = 10 kΩ, BW = 10 Hz–15.7 kHz - Quantified noise contribution critical for microphone and piezoelectric sensor interfaces
V_CE(sat)	-0.3 V @ I_C = -10 mA, I_B = -1.0 mA - Low saturation voltage preserving headroom in single-supply low-voltage amplifier stages
C_cb	4.0 pF @ V_CB = -5.0 V - Collector-base capacitance directly impacting high-frequency gain roll-off and stability margin

Pinout & Package

SOT-23 plastic surface-mount package with 3-pin configuration: 1. Base, 2. Emitter, 3. Collector; marked "2Q" on top surface. Thermal pad not present; standard reflow profile applies.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Current-controlled input node	Receives base drive current to modulate collector current; requires external bias network for stable Q-point setting
2 (Emitter)	Common reference terminal	Connected to ground or negative rail in common-emitter topology; carries full emitter current (I_E ≈ I_C)
3 (Collector)	Output current source	Delivers amplified output current into load; polarity is inverted relative to base input in common-emitter mode

Key Features

Feature	Design Value
Low-noise amplification	2.0 dB noise figure at 10 kΩ source impedance enables clean signal recovery from weak transducers
High DC current gain	h_FE ≥ 250 ensures minimal base drive requirements and stable biasing with high-value resistors
Wide gain-bandwidth product	40 MHz f_T supports faithful amplification of audio harmonics and low-speed data signals without phase distortion
Robust thermal rating	350 mW power dissipation at 25°C with 357°C/W R_θJA allows operation in compact PCB layouts without forced cooling
Controlled leakage	ICEO ≤ -50 nA at V_CB = -35 V ensures negligible off-state current in battery-powered standby circuits

Applications

Audio Preamp Stage	Temperature Sensor Interface
Use Scenario: Amplifying millivolt-level output from electret condenser microphones in portable voice recorders. IC Role / Device Role / Timing Role: PNP small-signal amplifier in common-emitter configuration providing voltage gain and impedance transformation. Use Value: 2.0 dB noise figure and 250 h_FE preserve SNR while enabling single-supply operation with minimal external components.	Use Scenario: Conditioning output from silicon bandgap temperature sensors in industrial monitoring nodes. IC Role / Device Role / Timing Role: Linear current amplifier converting sensor's PTAT voltage into robust current-mode signal for long-line transmission. Use Value: Stable h_FE over -40°C to +125°C and low V_CE(sat) ensure accurate scaling across full operating range without calibration drift.
Photodiode Transimpedance Stage	Low-Power Oscillator Core
Use Scenario: First-stage amplification of nanoamp photocurrents from ambient light sensors in IoT endpoints. IC Role / Device Role / Timing Role: Low-noise PNP transistor configured as grounded-base amplifier to minimize input capacitance and maximize bandwidth. Use Value: 4.0 pF C_cb and 40 MHz f_T enable >1 MHz signal bandwidth while maintaining sub-2 dB noise floor at high source impedances.	Use Scenario: Active device in Colpitts oscillator generating 1–5 MHz clock signals for microcontroller peripherals. IC Role / Device Role / Timing Role: Gain element sustaining oscillation via controlled negative resistance in tuned LC tank circuit. Use Value: Predictable h_FE and low V_CE(sat) ensure reliable startup and amplitude stability across voltage and temperature variations.

Audio Preamp Stage

Temperature Sensor Interface

Use Scenario: Amplifying millivolt-level output from electret condenser microphones in portable voice recorders.

IC Role / Device Role / Timing Role: PNP small-signal amplifier in common-emitter configuration providing voltage gain and impedance transformation.

Use Value: 2.0 dB noise figure and 250 h_FE preserve SNR while enabling single-supply operation with minimal external components.

Use Scenario: Conditioning output from silicon bandgap temperature sensors in industrial monitoring nodes.

IC Role / Device Role / Timing Role: Linear current amplifier converting sensor's PTAT voltage into robust current-mode signal for long-line transmission.

Use Value: Stable h_FE over -40°C to +125°C and low V_CE(sat) ensure accurate scaling across full operating range without calibration drift.

Photodiode Transimpedance Stage

Low-Power Oscillator Core

Use Scenario: First-stage amplification of nanoamp photocurrents from ambient light sensors in IoT endpoints.

IC Role / Device Role / Timing Role: Low-noise PNP transistor configured as grounded-base amplifier to minimize input capacitance and maximize bandwidth.

Use Value: 4.0 pF C_cb and 40 MHz f_T enable >1 MHz signal bandwidth while maintaining sub-2 dB noise floor at high source impedances.

Use Scenario: Active device in Colpitts oscillator generating 1–5 MHz clock signals for microcontroller peripherals.

IC Role / Device Role / Timing Role: Gain element sustaining oscillation via controlled negative resistance in tuned LC tank circuit.

Use Value: Predictable h_FE and low V_CE(sat) ensure reliable startup and amplitude stability across voltage and temperature variations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC807-25	h_FE = 160–400 (wider min/max spread); V_CEO = -45 V; SOT-23 package	Lower V_CEO limits use in higher-voltage rails; broader h_FE tolerance increases need for design margining	Select when cost sensitivity outweighs need for tight h_FE control and -50 V rating is non-critical
PN2907A	TO-92 package only; h_FE = 100–300; V_CEO = -60 V; higher R_θJA = 200°C/W	Through-hole mounting required; higher thermal resistance restricts power handling in dense layouts	Select for legacy through-hole designs or where -60 V V_CEO margin justifies larger footprint and lower integration density

Compared with BC807-25 and PN2907A, the MMBT5087 offers tighter h_FE specification (250 min), exact -50 V V_CEO compliance, and superior thermal performance in SOT-23-making it optimal for modern space-constrained, low-noise analog signal chains requiring predictable gain and minimal layout overhead.

Availability

MMBT5087 is available at Aetrix Electronics and suitable for audio preamplifiers, sensor signal conditioners, and low-power oscillator circuits requiring stable component supply, consistent parametric performance, and SOT-23 surface-mount compatibility.

Supply support for MMBT5087 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power and sensing solutions for automotive, industrial, and consumer markets.

The MMBT5087 belongs to ON Semiconductor's FACT Quiet Series™ line of low-noise bipolar transistors, engineered specifically for high-fidelity analog signal amplification in battery-powered and space-constrained systems.

FAQ

What is the maximum collector-emitter voltage rating for the MMBT5087?

The MMBT5087 has a maximum collector-emitter voltage (V_CEO) rating of -50 V. This value is verified under test condition IC = -1.0 mA and IB = 0 at 25°C, and defines the absolute upper limit for reverse-biased operation in common-emitter configuration. Exceeding this voltage risks irreversible breakdown and device failure. The MMBT5087 must not be used in circuits where transient or steady-state V_CE exceeds -50 V.

How does the MMBT5087 differ from the 2N5087 in terms of package and electrical behavior?

The MMBT5087 is the SOT-23 surface-mount version of the through-hole 2N5087, sharing identical electrical specifications including -50 V V_CEO, 250 minimum h_FE, and 2.0 dB noise figure. However, the MMBT5087 has lower power dissipation (350 mW vs. 625 mW) and higher thermal resistance (357°C/W vs. 200°C/W) due to its smaller SOT-23 footprint. Both share the same PNP polarity and low-noise amplifier function, but the MMBT5087 is optimized for automated assembly and high-density PCBs.

Can the MMBT5087 be used in switching applications?

The MMBT5087 is explicitly designed and characterized for linear amplification-not switching-with emphasis on low-noise, high-gain performance at collector currents up to 50 mA. While it can saturate (V_CE(sat) = -0.3 V), its datasheet does not specify switching parameters such as turn-on/off times, storage time, or charge characteristics. For dedicated switching use, ON Semiconductor recommends purpose-built devices like the NSS12201MR or MMBT2907A. Using MMBT5087 as a switch may result in unpredictable timing and degraded reliability.

What is the guaranteed minimum h_FE for the MMBT5087 at -10 mA collector current?

The MMBT5087 guarantees a minimum h_FE of 150 at I_C = -10 mA and V_CE = -5.0 V, per the "Electrical Characteristics" table. This is distinct from its 250 minimum h_FE at -1.0 mA, reflecting typical beta droop at higher currents. Designers relying on MMBT5087 for bias networks at -10 mA must account for this lower gain floor to ensure sufficient base drive and avoid unintended cutoff.

Is the MMBT5087 RoHS compliant and lead-free?

Yes, the MMBT5087 is RoHS compliant and lead-free. As a post-Fairchild-integration ON Semiconductor product, it conforms to Directive 2011/65/EU and subsequent amendments. The SOT-23 package uses matte tin (Sn) lead finish, and the device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 requirements. Full compliance documentation-including substance declarations and test reports-is available via ON Semiconductor's Quality & Environmental page at onsemi.com.

MMBT5087 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 1mA, 10mA

Current - Collector Cutoff (Max):: 10nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 250 @ 100µA, 5V

Power - Max:: 350 mW

Frequency - Transition:: 40MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

MMBT5087 FAQ

1.How can I place an order for MMBT5087 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT5087 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT5087 reliable?

The price and inventory of MMBT5087 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT5087 is usually 5 days.

3.What payment methods are accepted for MMBT5087?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT5087 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT5087?

MMBT5087 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT5087 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT5087?

For technical support, including MMBT5087 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT5087 requirements.

6.How does Aetrix verify that MMBT5087 is sourced from the original manufacturer or authorized distributors?

All MMBT5087 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT5087 meets industry standards.

7.What is the process for return or replacement of MMBT5087?

All MMBT5087 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT5087, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT5087 part is unused and in its original packaging.

Return procedure for MMBT5087:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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