onsemi MMBT5087LT1
- Part No.:
- MMBT5087LT1
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- -
- Datasheet:
-
MMBT5087LT1.pdf
- Description:
- TRANS PNP 50V 50MA SOT23
- Quantity:
- Payment:

- Shipping:

Inventory:2,343
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MMBT5087LT1 from onsemi is a low-noise PNP silicon small-signal transistor in SOT-23 package, rated for −50 V VCEO, −50 mAdc IC, and 225 mW power dissipation on FR-5 board, with hFE ≥ 250 at −10 mA, fT = 40 MHz, and NF ≤ 2.0 dB at 1 kHz - used in audio preamplifier stages and RF front-end bias networks.
For engineers reviewing the MMBT5087LT1 datasheet, pinout, applications, or equivalent options, this page delivers verified electrical specs, thermal derating behavior, noise contour data, SOT-23 terminal mapping, and automotive-grade AEC-Q101 qualified alternatives for low-noise analog signal path design.
Technical Context
This PNP transistor operates in linear amplification mode with guaranteed hFE ≥ 250 across three collector current points (−100 μA, −1 mA, −10 mA) at VCE = −5.0 V, supporting stable DC biasing in high-gain configurations. Its fT of 40 MHz enables use up to VHF band amplification when paired with appropriate emitter degeneration.
Noise performance is characterized across source resistances (RS ≈ 0 to ∞) and frequencies (100 Hz–15.7 kHz), with minimum NF = 2.0 dB at IC = −20 mA/RS = 10 kΩ and IC = −100 μA/RS = 3 kΩ - enabling optimization for microphone preamps and sensor interface circuits where input-referred noise dominates SNR.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 Vdc - supports rail-to-rail operation in −12 V or −24 V analog supply domains without breakdown risk. |
| IC (max) | −50 mAdc - sufficient for Class-A preamp stages and active filter bias currents without thermal runaway. |
| hFE | 250–800 - wide gain spread allows predictable DC bias point setting with ±20% tolerance in emitter resistor selection. |
| fT | 40 MHz - enables stable 10–20 MHz small-signal amplification with controlled phase margin in common-emitter topology. |
| NF | ≤ 2.0 dB @ 1 kHz - meets low-noise requirements for electret microphone preamplifiers and piezoelectric sensor interfaces. |
| PD (FR-5) | 225 mW @ 25°C, derated 1.8 mW/°C - limits maximum continuous dissipation to ~125 mW at 85°C ambient in standard PCB layouts. |
| RJA | 556 °C/W - defines thermal rise per watt; requires heatsinking or layout copper for >100 mW sustained operation. |
Pinout & Package
SOT-23 (TO-236) package, 2.90 × 1.30 × 1.00 mm body, 1.90 mm lead pitch, JEDEC case 318, style 6 - surface-mount compatible with standard reflow profiles and automated placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control electrode for forward-active bias; requires current-limited drive to maintain hFE linearity and avoid saturation. |
| 2 | Emiter | Common terminal in common-base configuration; connected to most positive rail in PNP amplifier topologies. |
| 3 | Collector | Output node in common-emitter mode; carries full load current and must be routed with low-inductance trace for RF stability. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive under-hood temperature cycling (−55°C to +150°C) and humidity exposure per stress test plan. |
| Low noise figure | 2.0 dB typical at 1 kHz enables <10 nV/√Hz input-referred voltage noise in optimized 10 kΩ source impedance designs. |
| Pb-free / RoHS | Meets EU RoHS Directive 2011/65/EU and halogen-free/BFR-free requirements for industrial and medical end equipment. |
| High hFE consistency | Guaranteed hFE ≥ 250 at three operating points ensures predictable DC bias stability across production lots. |
| Thermal robustness | Rated TJ = −55°C to +150°C with transient thermal resistance curves provided for pulsed-power reliability analysis. |
Applications
| Audio Preamp Stage | RF Bias Network |
|---|---|
|
Use Scenario: Electret condenser microphone (ECM) signal amplification in portable voice recorders and headset interfaces. IC Role / Device Role / Timing Role: Low-noise PNP preamplifier in common-emitter configuration with emitter degeneration resistor. Use Value: 2.0 dB NF at 1 kHz ensures >65 dB SNR in 20–20 kHz bandwidth with 10 kΩ source impedance, meeting IEC 61672 Class 2 accuracy. |
Use Scenario: Active biasing of GaAs FETs or SiGe HBTs in 868 MHz ISM-band transmitter front-ends. IC Role / Device Role / Timing Role: Constant-current sink providing stable quiescent current to RF device gate/base under temperature variation. Use Value: hFE ≥ 250 at −100 μA ensures <±5% current drift over −40°C to +85°C, maintaining RF output power stability. |
| Sensor Interface Circuit | Industrial Analog Input |
|
Use Scenario: Amplification of low-level signals from piezoresistive pressure sensors in HVAC control modules. IC Role / Device Role / Timing Role: First-stage transimpedance amplifier with feedback resistor and low-noise PNP gain element. Use Value: Cobo ≤ 4.0 pF minimizes phase lag in feedback loop, preserving closed-loop stability up to 1 MHz bandwidth. |
Use Scenario: Input stage of 4–20 mA current loop receiver with isolated power supply in PLC analog input cards. IC Role / Device Role / Timing Role: High-voltage PNP level shifter translating −24 V loop return to 3.3 V ADC reference domain. Use Value: VCEO = −50 V provides 2× safety margin against transients on industrial field wiring, reducing failure rate in noisy environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-noise PNP transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC857B,115 | hFE = 220–475, VCEO = −45 V, NF = 2.5 dB @ 1 kHz, SOT-23 package | Lower voltage rating and higher noise limit suitability for non-automotive consumer audio only | Select when cost sensitivity outweighs AEC-Q101 compliance and 5 V headroom margin is acceptable. |
| PN2907A | TO-92 package, VCEO = −60 V, IC = −600 mA, hFE = 100–300, no published NF spec | Through-hole mounting, higher power, uncharacterized noise - suitable for power switching not low-noise analog | Choose only for legacy through-hole designs requiring higher current drive; not recommended for noise-critical signal paths. |
Compared with BC857B,115 and PN2907A, the MMBT5087LT1 uniquely combines AEC-Q101 qualification, 2.0 dB noise figure, and −50 V rating in SOT-23 - making it the only option among the three validated for automotive audio front-ends and precision industrial sensor interfaces.
Availability
MMBT5087LT1 is available at Aetrix Electronics and suitable for audio preamplifier design, RF bias network implementation, and industrial analog input conditioning requiring stable component supply and automotive-grade reliability.
Supply support for MMBT5087LT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in automotive, industrial, cloud, and IoT markets.
The MMBT5087LT1 belongs to onsemi's low-noise bipolar transistor product line, engineered specifically for high-fidelity analog signal conditioning in automotive infotainment, industrial sensing, and communications infrastructure.
FAQ
What is the maximum junction temperature rating for MMBT5087LT1?
The MMBT5087LT1 has a specified junction and storage temperature range of −55°C to +150°C per its onsemi datasheet Rev. 7. This rating is validated under AEC-Q101 stress conditions and applies to both continuous operation and transient thermal events when derated per RJA = 556 °C/W on FR-5 board. The MMBT5087LT1 must not exceed +150°C at the die level during operation.
Does MMBT5087LT1 support automotive applications?
Yes, the MMBT5087LT1 carries NSV prefix and is explicitly AEC-Q101 qualified and PPAP capable per its datasheet. It undergoes temperature cycling, humidity testing, and mechanical shock validation for under-hood and cabin automotive use. The MMBT5087LT1 is approved for deployment in automotive audio systems, body control modules, and sensor signal chains where low-noise PNP amplification is required.
What is the noise figure specification for MMBT5087LT1 at 10 kHz?
The MMBT5087LT1 datasheet specifies noise figure ≤ 2.0 dB at two test conditions: IC = −20 mAdc/RS = 10 kΩ/f = 1.0 kHz and IC = −100 μAdc/RS = 3 kΩ/f = 1.0 kHz. No guaranteed NF value is published at 10 kHz; Figure 3–5 show contour plots indicating NF ≈ 2.5–3.0 dB at 10 kHz depending on IC and RS. For 10 kHz design, engineers must interpolate from the provided noise contours in the MMBT5087LT1 datasheet.
Is MMBT5087LT1 pin-compatible with MMBT5088LT1?
No, the MMBT5087LT1 and MMBT5088LT1 are not pin-compatible. While both use SOT-23 package and share style 6 pinout (Base–Emitter–Collector), the MMBT5088LT1 is an NPN transistor with opposite polarity and complementary characteristics. Swapping them without circuit redesign will cause reverse biasing and functional failure. The MMBT5087LT1 must be used only in PNP-configured circuits as defined in its datasheet.
What is the typical fT value for MMBT5087LT1 and how is it measured?
The MMBT5087LT1 has a guaranteed minimum fT of 40 MHz, measured under conditions IC = −500 μAdc, VCE = −5.0 Vdc, and f = 20 MHz per the onsemi datasheet. This parameter reflects the frequency at which the small-signal current gain |hfe| drops to unity and is critical for determining usable bandwidth in common-emitter amplifier designs. The MMBT5087LT1 achieves this performance while maintaining low noise and high hFE.
MMBT5087LT1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- *
- Package/Case:
- -
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- Transistor Type:
- -
- Current - Collector (Ic) (Max):
- -
- Voltage - Collector Emitter Breakdown (Max):
- -
- Vce Saturation (Max) @ Ib, Ic:
- -
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- -
- Power - Max:
- -
- Frequency - Transition:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
MMBT5087LT1 FAQ
1.How can I place an order for MMBT5087LT1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBT5087LT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBT5087LT1 reliable?
The price and inventory of MMBT5087LT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT5087LT1 is usually 5 days.
3.What payment methods are accepted for MMBT5087LT1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT5087LT1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBT5087LT1?
MMBT5087LT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBT5087LT1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBT5087LT1?
For technical support, including MMBT5087LT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT5087LT1 requirements.
6.How does Aetrix verify that MMBT5087LT1 is sourced from the original manufacturer or authorized distributors?
All MMBT5087LT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT5087LT1 meets industry standards.
7.What is the process for return or replacement of MMBT5087LT1?
All MMBT5087LT1 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT5087LT1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBT5087LT1 part is unused and in its original packaging.
Return procedure for MMBT5087LT1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMBT5087LT1 Tags

-
MMBT3906LT1G
onsemi

-
MMBT3904-7-F
Diodes Incorporated

-
MMBT3904LT1G
onsemi

-
MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

-
MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
