Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MMBT5088

Name: MMBT5088
Brand: onsemi
SKU: MMBT5088
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: MMBT5088

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBT5088.pdf

Description:: TRANS NPN 30V 0.1A SOT-23-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,646

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

MMBT5088 from ON Semiconductor is an NPN general-purpose amplifier optimized for low-noise, high-gain signal amplification at collector currents from 1 µA to 50 mA. It features V_CEO = 30 V, h_FE = 300–900 (at I_C = 100 µA to 10 mA), f_T = 50 MHz, NF = 3.0 dB (at I_C = 100 µA), and is packaged in SOT-23 for space-constrained analog front-ends.

For engineers reviewing the MMBT5088 datasheet, pinout, applications, or equivalent options, key selection criteria include its low-noise performance at microamp bias, wide h_FE range across operating current, thermal resistance of 357 °C/W on FR-4, and compatibility with low-voltage, battery-powered preamplifier stages.

Technical Context

The MMBT5088 operates as a discrete NPN bipolar junction transistor with fixed emitter-base and collector-base junction structures optimized for linear amplification-not switching. Its h_FE variation (300–900) and low noise figure (3.0 dB at 100 µA) reflect intentional doping and geometry design for analog gain stability across µA-to-mA bias ranges.

Thermal behavior is defined by R_θJA = 357 °C/W on standard FR-4 PCB, and maximum power dissipation is 350 mW at 25 °C-derating linearly at 2.8 mW/°C above ambient. The device supports operation from −55 °C to +150 °C, with V_(BR)CEO = 30 V and V_(BR)CBO = 35 V ensuring robustness in low-voltage analog rails.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	30 V - Maximum safe collector-emitter voltage before breakdown; enables use in 24 V analog signal chains.
h_FE	300–900 - Wide DC current gain range across 100 µA–10 mA bias; supports stable gain in low-power microphone preamps.
f_T	50 MHz - Unity-gain bandwidth at I_C = 500 µA; sufficient for audio and sub-MHz instrumentation amplifiers.
NF	3.0 dB @ I_C = 100 µA - Low noise figure at ultra-low bias; critical for battery-powered sensor interfaces.
P_D	350 mW @ 25 °C - Power limit on FR-4 PCB; defines thermal headroom in compact SOT-23 layouts.
R_θJA	357 °C/W - Junction-to-ambient thermal resistance; informs heatsinking needs in sealed enclosures.
C_cb	4.0 pF - Collector-base capacitance at V_CB = 5 V; limits high-frequency Miller effect in common-emitter stages.

Pinout & Package

SOT-23 plastic surface-mount package with 3-pin configuration (Collector, Base, Emitter), marked "1Q", designed for automated placement and reflow soldering on dense PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Reference node for bias network; connects to ground or emitter degeneration resistor in CE amplifier.
2 (Base)	Control input	Receives small-signal drive; requires impedance-matched source to minimize noise contribution.
3 (Collector)	Active output terminal	Delivers amplified current to load or next stage; voltage swing limited by V_CEO = 30 V.

Key Features

Feature	Design Value
Low-noise amplification	NF = 3.0 dB at I_C = 100 µA enables high-SNR signal conditioning in micropower sensor nodes.
High DC current gain	h_FE ≥ 300 at I_C = 100 µA ensures reliable bias point establishment without high base current draw.
Wide operating temperature	−55 °C to +150 °C junction range supports deployment in automotive engine compartments and industrial sensors.
Compact SOT-23 footprint	1.3 mm × 2.9 mm outline allows integration into space-limited portable medical and IoT devices.
Stable gain vs. voltage	h_FE remains >300 over V_CE = 0.5–5 V, simplifying bias design in single-supply systems.

Applications

Microphone Preamplifier	Photodiode Transimpedance Stage
Use Scenario: Amplifying weak AC-coupled signals from electret condenser microphones in voice-activated edge devices. IC Role / Device Role / Timing Role: Discrete NPN transconductance amplifier in common-emitter configuration with emitter degeneration. Use Value: 3.0 dB noise figure and h_FE ≥ 300 at 100 µA enable clean audio capture at <100 µA quiescent current.	Use Scenario: Converting low-level photocurrent (nA–µA) from ambient light sensors into measurable voltage. IC Role / Device Role / Timing Role: Active feedback element in transimpedance amplifier (TIA) topology with grounded base. Use Value: Low C_cb (4.0 pF) and high h_FE reduce TIA noise gain peaking and improve stability at high gain settings.
Thermocouple Signal Conditioning	Low-Power Sensor Interface IC Bias
Use Scenario: Amplifying µV-level thermocouple outputs in battery-powered data loggers with cold-junction compensation. IC Role / Device Role / Timing Role: First-stage low-noise amplifier in differential instrumentation path with matched h_FE pairs. Use Value: Stable h_FE across −40 °C to +85 °C ensures consistent gain calibration without software correction.	Use Scenario: Providing precise, low-drift bias current to op-amp input stages or reference buffers in ultra-low-power MCUs. IC Role / Device Role / Timing Role: Current source configured via base resistor, leveraging tight h_FE distribution at 1 mA. Use Value: h_FE = 350–450 at I_C = 1 mA enables accurate 1% bias current generation without trimming.

Microphone Preamplifier

Photodiode Transimpedance Stage

Use Scenario: Amplifying weak AC-coupled signals from electret condenser microphones in voice-activated edge devices.

IC Role / Device Role / Timing Role: Discrete NPN transconductance amplifier in common-emitter configuration with emitter degeneration.

Use Value: 3.0 dB noise figure and h_FE ≥ 300 at 100 µA enable clean audio capture at <100 µA quiescent current.

Use Scenario: Converting low-level photocurrent (nA–µA) from ambient light sensors into measurable voltage.

IC Role / Device Role / Timing Role: Active feedback element in transimpedance amplifier (TIA) topology with grounded base.

Use Value: Low C_cb (4.0 pF) and high h_FE reduce TIA noise gain peaking and improve stability at high gain settings.

Thermocouple Signal Conditioning

Low-Power Sensor Interface IC Bias

Use Scenario: Amplifying µV-level thermocouple outputs in battery-powered data loggers with cold-junction compensation.

IC Role / Device Role / Timing Role: First-stage low-noise amplifier in differential instrumentation path with matched h_FE pairs.

Use Value: Stable h_FE across −40 °C to +85 °C ensures consistent gain calibration without software correction.

Use Scenario: Providing precise, low-drift bias current to op-amp input stages or reference buffers in ultra-low-power MCUs.

IC Role / Device Role / Timing Role: Current source configured via base resistor, leveraging tight h_FE distribution at 1 mA.

Use Value: h_FE = 350–450 at I_C = 1 mA enables accurate 1% bias current generation without trimming.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N5088	TO-92 through-hole package; same V_CEO, h_FE, and NF specs; higher P_D (625 mW) and lower R_θJA (200 °C/W).	Preferred for prototyping, manual assembly, or legacy through-hole designs where board real estate is not constrained.	Select 2N5088 when hand-soldering or thermal margin >150 °C/W is required; not drop-in compatible with SOT-23 layout.
MMBT3904	Lower V_CEO (40 V), lower h_FE (100–300), higher NF (5 dB), but broader industry availability and tighter h_FE binning.	Better suited for digital switching or medium-gain general-purpose use; less optimal for ultra-low-noise µA-biased stages.	Choose MMBT3904 for cost-sensitive, non-critical gain applications; avoid where NF < 3.5 dB or h_FE > 400 is required at 100 µA.

Compared with 2N5088 and MMBT3904, the MMBT5088 uniquely balances ultra-low-noise operation at microamp bias with high h_FE and SOT-23 miniaturization-making it optimal for space- and power-constrained analog front-ends where signal integrity is prioritized over cost or switching speed.

Availability

MMBT5088 is available at Aetrix Electronics and suitable for microphone preamplifiers, photodiode transimpedance stages, thermocouple signal conditioners requiring stable component supply, consistent parametric performance, and long-term obsolescence management.

Supply support for MMBT5088 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (now onsemi) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and consumer markets.

The MMBT5088 belongs to onsemi's general-purpose bipolar transistor product line, engineered specifically for low-noise, high-gain linear amplification in battery-powered and space-constrained analog signal chains.

FAQ

What is the maximum collector-emitter voltage rating for the MMBT5088?

The MMBT5088 has a maximum collector-emitter voltage (V_CEO) rating of 30 V at T_A = 25 °C. This rating applies under steady-state DC conditions and must be derated per thermal constraints when ambient temperature exceeds 25 °C. Exceeding 30 V risks irreversible breakdown of the collector-emitter junction in the MMBT5088.

Does the MMBT5088 support operation at −55 °C?

Yes, the MMBT5088 is rated for full electrical performance across a junction temperature range of −55 °C to +150 °C. Its h_FE, V_BE(on), and noise figure remain within specification at −55 °C, making the MMBT5088 suitable for aerospace, outdoor industrial, and automotive under-hood sensor applications.

What is the typical noise figure of the MMBT5088 and under what conditions is it measured?

The MMBT5088 has a typical noise figure (NF) of 3.0 dB, measured at I_C = 100 µA, V_CE = 5.0 V, R_S = 10 kΩ, and frequency band 10 Hz to 15.7 kHz. This value reflects its optimization for low-noise amplification in micropower analog front-ends, and is a key differentiator versus standard general-purpose transistors like the MMBT3904.

Is the MMBT5088 pin-compatible with the MMBT3904?

No, the MMBT5088 is not pin-compatible with the MMBT3904. Although both use the SOT-23 package, the MMBT5088 has Collector-Base-Emitter (C-B-E) pinout, while the MMBT3904 uses Emitter-Base-Collector (E-B-C). Swapping them without layout revision will result in incorrect biasing and circuit failure in the MMBT5088 application.

What is the thermal resistance junction-to-ambient (R_θJA) for the MMBT5088 on standard FR-4 PCB?

The MMBT5088 has a specified R_θJA of 357 °C/W when mounted on a 1.6" × 1.6" × 0.06" FR-4 PCB per JEDEC standards. This value assumes no copper pour or thermal vias; adding 1-in² copper pad with 4 thermal vias reduces R_θJA to ~120 °C/W, directly improving MMBT5088 power handling capability.

MMBT5088 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 1mA, 10mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 300 @ 100µA, 5V

Power - Max:: 350 mW

Frequency - Transition:: 50MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

MMBT5088 FAQ

1.How can I place an order for MMBT5088 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT5088 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT5088 reliable?

The price and inventory of MMBT5088 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT5088 is usually 5 days.

3.What payment methods are accepted for MMBT5088?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT5088 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT5088?

MMBT5088 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT5088 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT5088?

For technical support, including MMBT5088 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT5088 requirements.

6.How does Aetrix verify that MMBT5088 is sourced from the original manufacturer or authorized distributors?

All MMBT5088 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT5088 meets industry standards.

7.What is the process for return or replacement of MMBT5088?

All MMBT5088 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT5088, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT5088 part is unused and in its original packaging.

Return procedure for MMBT5088:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…