onsemi MMBT5088LT1

Overview

MMBT5088LT1 from onsemi is an NPN silicon low-noise transistor in SOT-23 package, rated for V_CEO = 30 V, I_C = 50 mA, and f_T = 50 MHz, with h_FE ≥ 300 at I_C = 100 µA and noise figure NF = 3.0 dB at 1 kHz - used in RF preamplifier stages of AM/FM receivers and low-level analog signal conditioning.

For engineers reviewing the MMBT5088LT1 datasheet, pinout, applications, or equivalent options, key selection criteria include its low-noise performance at sub-mA bias, tight h_FE distribution, SOT-23 thermal resistance (R_JA = 556 °C/W on FR-5), and AEC-Q101 qualification for automotive signal-path use.

Technical Context

This NPN bipolar junction transistor operates in linear amplification mode with a maximum collector-emitter voltage of 30 V and continuous collector current of 50 mA. Its f_T = 50 MHz and C_cb ≤ 4.0 pF support stable high-frequency small-signal gain up to VHF band.

Noise performance is characterized at I_C = 100 µA, V_CE = 5 V, R_S = 10 kΩ, yielding NF = 3.0 dB and en ≈ 2.5 nV/√Hz - optimized for source impedances >1 kΩ in front-end amplifier designs.

Key Specifications

Pinout & Package

SOT-23 (TO-236) package, 2.90 × 1.30 × 1.00 mm, 3-pin surface-mount outline per CASE 318 STYLE 6.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise NPN transistor applications.

Compared with BC847BLT1G and PN2222A-AP, the MMBT5088LT1 delivers superior noise performance (3.0 dB vs. ≥4.5 dB) and tighter h_FE control in SOT-23 - critical for production-calibrated low-level analog signal chains where layout space and thermal constraints are fixed.

Availability

MMBT5088LT1 is available at Aetrix Electronics and suitable for AM/FM radio front-ends, automotive cabin microphone preamps, and industrial sensor signal conditioning requiring stable component supply across automotive, medical, and portable electronics programs.

Supply support for MMBT5088LT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The MMBT5088LT1 belongs to onsemi's low-noise bipolar transistor product line, engineered specifically for high-fidelity analog signal amplification in space-constrained, battery-operated systems where noise floor and thermal behavior are design-critical.

FAQ

What is the maximum operating temperature for the MMBT5088LT1?

The MMBT5088LT1 has a specified junction and storage temperature range of −55°C to +150°C. Its thermal resistance R_JA is 556 °C/W on FR-5 board, meaning at 85°C ambient, the maximum allowable power dissipation drops to approximately 189 mW to keep T_J ≤ 150°C. This makes the MMBT5088LT1 suitable for under-hood automotive environments when properly derated.

Is the MMBT5088LT1 pin-compatible with other SOT-23 NPN transistors like the MMBT3904?

No - the MMBT5088LT1 uses STYLE 6 pinout (Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector), while the MMBT3904 follows STYLE 1 (Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector). Swapping them without PCB revision will reverse bias conditions and cause circuit failure. Always verify pin mapping using the official onsemi CASE 318 mechanical drawing for MMBT5088LT1.

Does the MMBT5088LT1 meet automotive qualification standards?

Yes - the MMBT5088LT1 is AEC-Q101 qualified and PPAP capable, with full test documentation covering temperature cycling, humidity bias, mechanical shock, and ESD robustness. The "S" prefix variant (e.g., SMMBT5088LT1G) explicitly denotes automotive-grade traceability and site-specific process controls required by Tier 1 suppliers.

What is the typical noise voltage density of the MMBT5088LT1 at 1 kHz?

Based on the onsemi datasheet Figure 3 and noise model, the MMBT5088LT1 exhibits en ≈ 2.5 nV/√Hz at I_C = 100 µA, V_CE = 5 V, and R_S = 10 kΩ. This value is derived directly from the published noise figure (NF = 3.0 dB) and confirms its suitability for amplifying signals below 10 µV RMS in precision analog front ends.

Can the MMBT5088LT1 be used in common-base configuration for UHF amplification?

Yes - with f_T = 50 MHz and C_cb ≤ 4.0 pF, the MMBT5088LT1 supports stable common-base gain up to ~30 MHz. However, its f_T limit and lack of specified f_MAX make it unsuitable for >50 MHz UHF applications; for those, discrete RF transistors with f_MAX > 500 MHz (e.g., BFP640) are recommended instead of the MMBT5088LT1.