onsemi MMBT5088-NB10216

Overview

MMBT5088-NB10216 from onsemi is an NPN silicon low-noise transistor in SOT-23 package, rated for V_CEO = 30 V, I_C = 50 mA, and f_T = 50 MHz, with noise figure NF = 3.0 dB at 1 kHz (I_C = 100 µA, R_S = 10 kΩ), widely used in RF preamplifier stages of AM/FM receivers and low-level analog signal conditioning.

For engineers reviewing the MMBT5088-NB10216 datasheet, pinout, applications, or equivalent options, key selection criteria include verified low-noise performance at microamp bias, guaranteed h_FE ≥ 300 at 100 µA, SOT-23 thermal resistance (R_JA = 556 °C/W on FR-5), AEC-Q101 qualification, and Pb-free RoHS compliance.

Technical Context

This device operates as a discrete NPN bipolar junction transistor optimized for low-noise amplification in small-signal analog circuits. Its design emphasizes high current gain (h_FE = 300–900 across 100 µA–10 mA), low base-emitter saturation voltage (V_BE(sat) ≤ 0.8 V), and minimal capacitance (C_cb ≤ 4.0 pF, C_eb ≤ 10 pF) to preserve bandwidth and signal integrity.

The MMBT5088-NB10216 exhibits stable DC gain over temperature (−55°C to +150°C) and maintains low noise voltage (e_n) and current (i_n) across 10 Hz–100 kHz, enabling precision front-end amplification where source impedances range from 1 kΩ to 10 kΩ - confirmed by Figure 7 and Figure 6 in the official datasheet.

Key Specifications

Pinout & Package

SOT-23 (TO-236) surface-mount package, 3-pin, JEDEC-standard footprint (Case 318, Style 6), with 1.9 mm pitch, 2.9 mm × 1.3 mm body, and 0.43 mm nominal lead length. Thermal pad not present; designed for reflow soldering on FR-5 or alumina substrates.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise NPN transistor applications.

Compared with BC846B,215 and PN2222A-AP, the MMBT5088-NB10216 delivers superior noise performance (3.0 dB vs. ≥4.5 dB) and SOT-23 space efficiency, making it optimal for miniaturized, battery-sensitive RF and audio front-ends where signal integrity is critical.

Availability

MMBT5088-NB10216 is available at Aetrix Electronics and suitable for AM/FM radio front-ends, low-voltage sensor amplifiers, and audio preamplifier stages requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for MMBT5088-NB10216 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation, serving automotive, industrial, cloud, and intelligent devices markets with differentiated analog, power, and sensing solutions.

The MMBT5088-NB10216 belongs to onsemi's low-noise bipolar transistor product line, engineered specifically for high-fidelity signal amplification in consumer, automotive, and industrial analog front-ends where noise, gain stability, and thermal reliability are critical.

FAQ

What is the maximum collector-emitter voltage rating for MMBT5088-NB10216?

The MMBT5088-NB10216 has a maximum collector-emitter voltage (V_CEO) rating of 30 Vdc, as specified in the Absolute Maximum Ratings table. This value is tested under defined conditions (I_C = 1.0 mAdc, I_B = 0) and must not be exceeded to prevent device breakdown. Operation above this voltage risks irreversible damage and loss of gain or leakage control in the MMBT5088-NB10216.

Does MMBT5088-NB10216 meet automotive qualification standards?

Yes, the MMBT5088-NB10216 is AEC-Q101 qualified and PPAP capable, as explicitly stated in the "Features" section of the official datasheet. This qualification confirms its suitability for automotive applications such as infotainment system preamplifiers, sensor interfaces, and body control modules where reliability under temperature cycling, humidity, and vibration is mandatory - a key differentiator of the MMBT5088-NB10216 versus generic transistors.

What is the typical noise figure of MMBT5088-NB10216 and under what conditions is it measured?

The MMBT5088-NB10216 has a typical noise figure (NF) of 3.0 dB, measured at I_C = 100 µA, V_CE = 5.0 Vdc, R_S = 10 kΩ, and f = 1.0 kHz. This value is confirmed in the Electrical Characteristics table and supported by Figure 7 in the datasheet. It reflects real-world low-noise performance in high-impedance signal paths - a defining specification that makes the MMBT5088-NB10216 appropriate for sensitive RF and audio applications.

Is MMBT5088-NB10216 available in Pb-free packaging?

Yes, the MMBT5088-NB10216 is supplied in Pb-free, halogen-free/BFR-free packaging and is RoHS compliant, as documented in the "Features" section and ordering information. The "G" suffix in part variants (e.g., MMBT5088LT1G) denotes Pb-free construction, and the device meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for standard reflow processes - critical for modern electronics assembly of the MMBT5088-NB10216.

What is the thermal resistance junction-to-ambient for MMBT5088-NB10216 on FR-5 board?

The thermal resistance junction-to-ambient (R_JA) for the MMBT5088-NB10216 is 556 °C/W when mounted on an FR-5 board (1.0 × 0.75 × 0.062 in.), per the Thermal Characteristics table. This value directly determines allowable power dissipation: at 25°C ambient, max PD = 225 mW, derating by 1.8 mW/°C above 25°C. Accurate thermal modeling using this R_JA is essential for reliability validation of the MMBT5088-NB10216 in compact PCB layouts.