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onsemi MMBT5089LT1
- Part No.:
- MMBT5089LT1
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
MMBT5089LT1.pdf
- Description:
- TRANS NPN 25V 0.05A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,792
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Product details
Overview
MMBT5089LT1 from onsemi is an NPN silicon low-noise transistor in SOT-23 package, rated for VCEO = 25 V, IC = 50 mA, and noise figure NF = 2.0 dB at 1 kHz with RS = 10 kΩ - optimized for RF amplification and audio preamplifier stages in portable instrumentation.
For engineers reviewing the MMBT5089LT1 datasheet, pinout, applications, or equivalent options, key selection criteria include its 2.0 dB noise figure at 1 kHz, 4.0 pF Ccb, 10 pF Ceb, hFE range of 400–1200, and SOT-23 thermal resistance of 556 °C/W on FR-5 board.
Technical Context
This NPN bipolar junction transistor operates in linear active mode for low-noise amplification, with verified fT = 50 MHz at IC = 500 µA and VCE = 5 V. Its noise model is characterized by voltage noise en and current noise in, with minimum total noise voltage below 3.0 nV/√Hz at IC = 1 mA and RS ≈ 0 Ω.
The device supports stable DC biasing via base-emitter saturation voltage VBE(sat) ≤ 0.8 V at IC/IB = 10, and collector-emitter saturation voltage VCE(sat) ≤ 0.5 V under same conditions. Thermal performance is validated for continuous operation from −55°C to +150°C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 25 Vdc - maximum allowable collector-emitter voltage before breakdown; defines safe operating voltage headroom in amplifier supply rails. |
| hFE | 400–1200 - DC current gain range at IC = 1–10 mA; enables predictable bias stability and gain control in discrete amplifier designs. |
| NF | 2.0 dB @ 1 kHz, RS = 10 kΩ - measured noise figure; critical for high-fidelity audio front-ends and low-level RF signal conditioning. |
| Ccb | 4.0 pF - collector-base capacitance at VCB = 5 V; directly impacts high-frequency gain roll-off and stability margin in tuned amplifiers. |
| PD | 225 mW @ TA = 25°C on FR-5 board - absolute power dissipation limit; determines usable output swing and thermal derating in PCB layouts. |
| fT | 50 MHz - current-gain bandwidth product at IC = 500 µA; sets upper frequency bound for small-signal amplification without gain collapse. |
Pinout & Package
SOT-23 (TO-236) surface-mount package, 2.90 × 1.30 × 1.00 mm, 3-pin configuration per Style 6: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Base | Control electrode | Accepts input bias current to modulate collector current; requires stable DC path to ground or bias network for linear operation. |
| 2 - Emitter | Current source terminal | Common reference node in common-emitter amplifiers; connects to ground or emitter degeneration resistor for gain and linearity control. |
| 3 - Collector | Output current terminal | Delivers amplified output current; connects to load resistor or next-stage input; sensitive to stray capacitance due to Ccb coupling. |
Key Features
| Feature | Design Value |
|---|---|
| Low noise figure | 2.0 dB at 1 kHz enables high-SNR signal amplification in microphone preamps and sensor interfaces where signal integrity is critical. |
| High hFE consistency | Min 400 at IC = 1 mA ensures reliable bias point establishment across production lots without trimming. |
| Thermal robustness | Junction temperature range −55°C to +150°C supports operation in automotive engine compartments and industrial enclosures. |
| Pb-free & RoHS compliant | SMT-compatible lead finish meets global environmental compliance requirements without solderability degradation. |
| AEC-Q101 qualified | Validated for automotive electronics applications including infotainment front-ends and body control module sensors. |
Applications
| Audio Preamp Stage | RF Signal Amplifier |
|---|---|
|
Use Scenario: Low-level analog signal amplification from electret microphones or piezoelectric sensors in portable voice recorders. IC Role / Device Role / Timing Role: Discrete NPN transistor configured as common-emitter amplifier with emitter degeneration. Use Value: 2.0 dB noise figure preserves signal-to-noise ratio at sub-millivolt input levels, avoiding digitization loss in 16-bit ADC front-ends. |
Use Scenario: Intermediate-frequency (IF) amplification in AM/FM radio receivers operating up to 30 MHz. IC Role / Device Role / Timing Role: Small-signal linear amplifier with fixed bias network and LC-tuned collector load. Use Value: 50 MHz fT and 4.0 pF Ccb support stable gain >15 dB across 0.5–25 MHz band without neutralization. |
| Automotive Sensor Interface | Industrial Instrumentation Front-End |
|
Use Scenario: Signal conditioning for thermistor or Hall-effect position sensors in vehicle cabin climate control modules. IC Role / Device Role / Timing Role: Low-noise transimpedance or voltage amplifier in analog sensor signal chain. Use Value: AEC-Q101 qualification and −55°C to +150°C operation ensure reliability in under-dash environments with wide thermal cycling. |
Use Scenario: High-precision analog front-end for handheld multimeters and data loggers measuring µV-level signals. IC Role / Device Role / Timing Role: First-stage amplifier in chopper-stabilized or auto-zero architectures requiring minimal input-referred noise. Use Value: 10 pF Ceb and low VBE(sat) enable fast settling and minimal charge injection during multiplexed sampling sequences. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-noise NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847BLT1G | Lower VCEO (45 V), higher NF (4.0 dB), hFE min 200 - less suitable for ultra-low-noise audio but better voltage headroom. | Preferred in general-purpose amplification where noise <2.5 dB is not required and supply rails exceed 30 V. | Select BC847BLT1G when system-level noise budget allows ≥4 dB and higher collector voltage tolerance is needed. |
| PN2222A | TO-92 package, VCEO = 40 V, NF = 10 dB - significantly higher noise, lower fT (300 MHz but uncharacterized for low-noise use), no AEC-Q101 rating. | Used in legacy through-hole designs; unsuitable for space-constrained or automotive-grade applications. | Choose PN2222A only for cost-sensitive, non-automotive, non-portable applications where SMT is not required and noise >5 dB is acceptable. |
Compared with BC847BLT1G and PN2222A, the MMBT5089LT1 delivers superior noise performance (2.0 dB vs. ≥4 dB), guaranteed AEC-Q101 qualification, and SOT-23 footprint compatibility - making it the preferred choice for modern compact, low-noise, automotive-qualified analog signal chains.
Availability
MMBT5089LT1 is available at Aetrix Electronics and suitable for audio preamplifier stages, RF signal amplifiers, and automotive sensor interfaces requiring stable component supply and consistent low-noise performance across production volumes.
Supply support for MMBT5089LT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi is a global semiconductor manufacturer specializing in energy-efficient, high-performance analog and power management solutions for automotive, industrial, and consumer markets.
The MMBT5089LT1 belongs to onsemi's low-noise transistor family designed specifically for high-fidelity signal amplification in portable, battery-powered, and automotive electronics where noise, size, and reliability are critical.
FAQ
What is the maximum collector-emitter voltage rating for MMBT5089LT1?
The MMBT5089LT1 has a maximum collector-emitter voltage (VCEO) rating of 25 Vdc, as specified in the Absolute Maximum Ratings table. This value is strictly limited and must not be exceeded in any operating condition to prevent device breakdown. The MMBT5089LT1 is therefore suited for low-voltage amplifier designs where supply rails remain below 25 V, such as in portable audio equipment and automotive sensor signal chains.
Does MMBT5089LT1 meet automotive qualification standards?
Yes, the MMBT5089LT1 is AEC-Q101 qualified and PPAP capable, as confirmed in the Features section of the official onsemi datasheet. This qualification validates its reliability for automotive applications including under-hood and cabin electronics, with testing covering temperature cycling, humidity bias, and mechanical shock. The MMBT5089LT1 is explicitly marked for automotive use with S- and NSV-prefix variants.
What is the typical noise figure of MMBT5089LT1 and under what conditions is it measured?
The MMBT5089LT1 has a typical noise figure (NF) of 2.0 dB, measured at IC = 100 µA, VCE = 5.0 Vdc, RS = 10 kΩ, and f = 1.0 kHz. This value is listed in the Electrical Characteristics table and reflects its optimized performance for low-noise small-signal amplification. The MMBT5089LT1 achieves this low NF through precise doping profiles and minimized base resistance, distinguishing it from general-purpose transistors like the BC847B.
What package type and pin configuration does MMBT5089LT1 use?
The MMBT5089LT1 uses the SOT-23 (TO-236) surface-mount package with mechanical dimensions 2.90 × 1.30 × 1.00 mm. Per Style 6 pinout defined in the datasheet, Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector. This configuration is standardized across onsemi's low-noise transistor series and ensures compatibility with automated pick-and-place assembly and standard SOT-23 footprints.
How does the thermal resistance of MMBT5089LT1 affect PCB layout decisions?
The MMBT5089LT1 exhibits a thermal resistance RJA of 556 °C/W on FR-5 board at TA = 25°C, meaning each 1 mW of dissipated power raises junction temperature by ~0.556°C. For reliable operation near its 225 mW power limit, designers must provide adequate copper pour, avoid thermal isolation, and consider ambient temperature rise. The MMBT5089LT1's RJA is 25% higher than on alumina substrates, so FR-5 layouts require more conservative derating above 25°C.
MMBT5089LT1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 50 mA
- Voltage - Collector Emitter Breakdown (Max):
- 25 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 450 @ 1mA, 5V
- Power - Max:
- 225 mW
- Frequency - Transition:
- 50MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
MMBT5089LT1 FAQ
1.How can I place an order for MMBT5089LT1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBT5089LT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBT5089LT1 reliable?
The price and inventory of MMBT5089LT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT5089LT1 is usually 5 days.
3.What payment methods are accepted for MMBT5089LT1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT5089LT1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBT5089LT1?
MMBT5089LT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBT5089LT1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBT5089LT1?
For technical support, including MMBT5089LT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT5089LT1 requirements.
6.How does Aetrix verify that MMBT5089LT1 is sourced from the original manufacturer or authorized distributors?
All MMBT5089LT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT5089LT1 meets industry standards.
7.What is the process for return or replacement of MMBT5089LT1?
All MMBT5089LT1 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT5089LT1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBT5089LT1 part is unused and in its original packaging.
Return procedure for MMBT5089LT1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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