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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MMBT5401M3T5G

Name: MMBT5401M3T5G
Brand: onsemi
SKU: MMBT5401M3T5G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MMBT5401M3T5G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: SOT-723

Datasheet:: MMBT5401M3T5G.pdf

Description:: TRANS PNP 150V 0.06A SOT-723

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MMBT5401M3T5G from onsemi is a PNP silicon small-signal transistor in SOT-723 package, rated for −150 V_CEO, −60 mA continuous collector current, and 100–300 MHz f_T. It delivers low V_CE(sat) (−0.09 V at −10 mA/−1 mA) and high h_FE (min 50 at −1 mA), suited for compact low-power amplifier and switching stages in automotive sensor interfaces.

For engineers reviewing the MMBT5401M3T5G datasheet, pinout, applications, or equivalent options, key selection factors include its AEC-Q101 qualification, −150 V breakdown rating, SOT-723 footprint constraints, and verified performance across −55 °C to +150 °C junction temperature range.

Technical Context

The MMBT5401M3T5G is a discrete PNP bipolar junction transistor optimized for general-purpose amplification and switching in space-constrained PCB layouts. Its SOT-723 package (1.20 × 0.80 × 0.50 mm) supports high-density placement while maintaining thermal resistance of 470 °C/W on FR-5 board.

It operates with verified DC current gain (h_FE) from 50 to 240 across −1 mA to −50 mA collector currents, and exhibits low noise figure (≤8.0 dB at −200 µA), making it suitable for precision analog front-ends and low-current bias networks where voltage headroom and leakage control are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−150 V - Enables use in high-side switch circuits up to 150 V supply rails without breakdown.
I_C (cont.)	−60 mA - Supports signal-level load driving in battery-powered sensors and logic interface stages.
f_T	100–300 MHz - Allows stable small-signal amplification up to VHF band in RF detector or oscillator bias networks.
V_CE(sat)	−0.09 V (typ. at −10 mA/−1 mA) - Minimizes conduction loss and self-heating in active-load configurations.
h_FE	50–240 - Provides predictable DC gain across operating current range for stable bias point design.
R_JA	470 °C/W - Requires careful thermal layout on FR-5; limits usable power dissipation to ~130 mW at 25 °C ambient.

Pinout & Package

SOT-723 (Case 631AA) is a 3-pin ultra-miniature surface-mount package measuring 1.20 × 0.80 × 0.50 mm with 0.40 mm pitch. Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector.

Pin/Terminal	Circuit Role	Design Meaning
1 - Base	Control input terminal	Accepts reverse-biased current to turn on PNP conduction; requires current-limiting resistor in most driver applications.
2 - Emitter	Current source terminal	Connected to higher potential rail in common-emitter configuration; defines reference for V_EB and I_E paths.
3 - Collector	Output current terminal	Sinks current to load when biased; polarity must respect −V_CEO and −V_CBO ratings in circuit layout.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JESD47.
Pb-free, halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E; no BFRs or antimony trioxide flame retardants.
Low leakage (I_CBO ≤ −100 nA)	Enables stable operation in high-impedance bias networks and low-power sleep-mode circuits.
High f_T / low C_ibo combo	100–300 MHz f_T with only 12.5–15 pF input capacitance supports wideband small-signal gain without excessive loading.
Wide T_J range (−55 to +150 °C)	Permits deployment in under-hood automotive modules, industrial controllers, and outdoor IoT edge nodes.

Applications

Automotive Ambient Light Sensor Interface	Industrial Current-Sense Amplifier Bias Stage
Use Scenario: Signal conditioning stage for photodiode output in vehicle cabin lighting control, operating at 12 V supply with microamp-level photocurrent. IC Role / Device Role / Timing Role: PNP active load and DC bias generator for transimpedance amplifier input stage. Use Value: −150 V_CEO margin prevents breakdown during load dump transients; low I_CBO avoids dark-current drift in precision sensing.	Use Scenario: High-side current mirror reference in 24 V factory automation shunt monitor, requiring stable gain over temperature. IC Role / Device Role / Timing Role: Precision PNP current source element in matched pair configuration for offset-canceled sensing. Use Value: h_FE consistency (50–240) across −1 to −50 mA enables accurate mirroring ratio; AEC-Q101 ensures field longevity.
Portable Medical Pulse Oximeter Front-End	Smart Meter Voltage Reference Buffer
Use Scenario: Low-noise emitter-follower buffer between red/IR LED drivers and ADC input in battery-powered wearable oximeters. IC Role / Device Role / Timing Role: Unity-gain voltage follower providing isolation and drive capability for high-Z ADC sampling nodes. Use Value: NF ≤ 8.0 dB at −200 µA preserves SNR in weak optical signal paths; SOT-723 footprint saves space on compact flex PCBs.	Use Scenario: Temperature-stable bias generator for bandgap reference in Class 0.2 electricity meters operating at 230 V AC mains. IC Role / Device Role / Timing Role: PNP-based current source feeding PTAT and CTAT branches in curvature-corrected reference core. Use Value: Stable h_FE vs. temperature (−55 to +150 °C) maintains reference accuracy; Pb-free compliance meets global meter certification requirements.

Automotive Ambient Light Sensor Interface

Industrial Current-Sense Amplifier Bias Stage

Use Scenario: Signal conditioning stage for photodiode output in vehicle cabin lighting control, operating at 12 V supply with microamp-level photocurrent.

IC Role / Device Role / Timing Role: PNP active load and DC bias generator for transimpedance amplifier input stage.

Use Value: −150 V_CEO margin prevents breakdown during load dump transients; low I_CBO avoids dark-current drift in precision sensing.

Use Scenario: High-side current mirror reference in 24 V factory automation shunt monitor, requiring stable gain over temperature.

IC Role / Device Role / Timing Role: Precision PNP current source element in matched pair configuration for offset-canceled sensing.

Use Value: h_FE consistency (50–240) across −1 to −50 mA enables accurate mirroring ratio; AEC-Q101 ensures field longevity.

Portable Medical Pulse Oximeter Front-End

Smart Meter Voltage Reference Buffer

Use Scenario: Low-noise emitter-follower buffer between red/IR LED drivers and ADC input in battery-powered wearable oximeters.

IC Role / Device Role / Timing Role: Unity-gain voltage follower providing isolation and drive capability for high-Z ADC sampling nodes.

Use Value: NF ≤ 8.0 dB at −200 µA preserves SNR in weak optical signal paths; SOT-723 footprint saves space on compact flex PCBs.

Use Scenario: Temperature-stable bias generator for bandgap reference in Class 0.2 electricity meters operating at 230 V AC mains.

IC Role / Device Role / Timing Role: PNP-based current source feeding PTAT and CTAT branches in curvature-corrected reference core.

Use Value: Stable h_FE vs. temperature (−55 to +150 °C) maintains reference accuracy; Pb-free compliance meets global meter certification requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT5401LT1G	SOT-23 package (larger: 3.0 × 1.4 × 1.1 mm); identical electrical specs but higher R_JA (350 °C/W).	Less suitable for ultra-dense layouts; better thermal margin in low-airflow enclosures.	Select when board real estate allows larger footprint and thermal management prioritizes dissipation over size.
PN2907A	TO-92 through-hole; lower f_T (100 MHz max); non-AEC-Q101; wider h_FE spread (100–300).	Not suitable for automotive or surface-mount production; limited to prototyping or legacy through-hole designs.	Choose only for manual assembly or cost-sensitive non-automotive prototypes where SMT is not required.

Compared with MMBT5401LT1G and PN2907A, the MMBT5401M3T5G uniquely combines AEC-Q101 qualification, SOT-723 miniaturization, and guaranteed −150 V_CEO in a single RoHS-compliant device-making it the sole option for production automotive SMT designs needing both high-voltage tolerance and footprint efficiency.

Availability

MMBT5401M3T5G is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial current-sense modules, portable medical devices, and smart meter reference circuits requiring stable component supply and long-term lifecycle support.

Supply support for MMBT5401M3T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier focused on energy-efficient electronics, delivering silicon solutions for automotive, industrial, cloud, and IoT applications.

The MMBT5401M3T5G belongs to onsemi's high-voltage PNP transistor family designed specifically for space-constrained, high-reliability analog signal conditioning and switching in automotive and industrial environments.

FAQ

What is the maximum collector-emitter voltage rating for the MMBT5401M3T5G?

The MMBT5401M3T5G has a guaranteed minimum V_CEO rating of −150 VDC under test condition I_C = −1.0 mA and I_B = 0. This rating is validated per onsemi's published datasheet Rev. 2 (December 2024) and applies across the full operating temperature range of −55 °C to +150 °C. Exceeding this voltage risks irreversible breakdown.

Is the MMBT5401M3T5G suitable for automotive applications?

Yes, the MMBT5401M3T5G carries NSV prefix and is explicitly AEC-Q101 qualified and PPAP capable per its datasheet. It undergoes stress testing for temperature cycling, high-temperature reverse bias, and ESD per JESD47, confirming suitability for under-hood and cabin automotive systems such as sensor signal conditioning and LED driver bias networks.

What is the pin configuration of the MMBT5401M3T5G in SOT-723 package?

The MMBT5401M3T5G uses standard SOT-723 pinout: Pin 1 is Base, Pin 2 is Emitter, Pin 3 is Collector. This mapping is confirmed in the "MECHANICAL CASE OUTLINE" section of the official onsemi datasheet (Publication Order Number MMBT5401M3/D, Rev. 2), and matches the marking diagram "NSVMMBT5401M3T5G" on the device body.

Does the MMBT5401M3T5G meet RoHS and halogen-free requirements?

Yes, the MMBT5401M3T5G is Pb-free, halogen-free, and BFR-free, fully compliant with EU RoHS Directive 2011/65/EU. The "G" suffix in the part number denotes RoHS compliance, and the datasheet explicitly states conformance to JEDEC JS709E for halogen content limits (<900 ppm Cl, <900 ppm Br, <1500 ppm total halogens).

What is the typical current gain (h_FE) of the MMBT5401M3T5G at −10 mA collector current?

At I_C = −10 mA and V_CE = −5.0 V, the MMBT5401M3T5G exhibits a typical h_FE of 80, with minimum 60 and maximum 90 specified in the Electrical Characteristics table. This value is measured at T_A = 25 °C and remains stable across −55 °C to +150 °C per Figure 2 in the datasheet.

MMBT5401M3T5G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: SOT-723

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 60 mA

Voltage - Collector Emitter Breakdown (Max):: 150 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 10mA, 5V

Power - Max:: 130 mW

Frequency - Transition:: 180MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-723

MMBT5401M3T5G FAQ

1.How can I place an order for MMBT5401M3T5G through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT5401M3T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT5401M3T5G reliable?

The price and inventory of MMBT5401M3T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT5401M3T5G is usually 5 days.

3.What payment methods are accepted for MMBT5401M3T5G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT5401M3T5G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT5401M3T5G?

MMBT5401M3T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT5401M3T5G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT5401M3T5G?

For technical support, including MMBT5401M3T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT5401M3T5G requirements.

6.How does Aetrix verify that MMBT5401M3T5G is sourced from the original manufacturer or authorized distributors?

All MMBT5401M3T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT5401M3T5G meets industry standards.

7.What is the process for return or replacement of MMBT5401M3T5G?

All MMBT5401M3T5G units undergo pre-shipment inspection (PSI). If there is an issue with MMBT5401M3T5G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT5401M3T5G part is unused and in its original packaging.

Return procedure for MMBT5401M3T5G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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