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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MMBT5962

Name: MMBT5962
Brand: onsemi
SKU: MMBT5962
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MMBT5962

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBT5962.pdf

Description:: TRANS NPN 45V 0.1A SOT-23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MMBT5962 from ON Semiconductor is an NPN general-purpose amplifier transistor designed for low-noise, high-gain signal amplification up to 50 mA collector current, with V_CEO = 45 V, h_FE ≥ 450 at I_C = 10 µA, and noise figure as low as 3.0 dB at 1 kHz - used in audio preamplifier stages and sensor signal conditioning circuits.

For engineers reviewing the MMBT5962 datasheet, pinout, applications, or equivalent options, this page delivers verified package mapping (SOT-23), confirmed thermal resistance (R_θJA = 357 °C/W), absolute maximum ratings, small-signal gain (h_fe = 600 @ 10 MHz), and two validated alternative transistors for design continuity.

Technical Context

The MMBT5962 operates as a discrete NPN bipolar junction transistor optimized for linear amplification in low-current, low-noise analog signal paths. Its h_FE spans 450–1400 across I_C = 10 µA to 10 mA, and its C_cb = 4.0 pF and C_eb = 6.0 pF support stable high-frequency operation up to 100 MHz.

It features V_CE(sat) = 0.2 V at I_C = 10 mA / I_B = 0.5 mA and V_BE(on) = 0.5–0.7 V at I_C = 1.0 mA, enabling efficient biasing in Class-A amplifier topologies. The device is fabricated on Fairchild Process 07 and shares electrical characteristics with the 2N5088 family.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	45 V - Maximum safe collector-emitter voltage before breakdown; enables use in 36 V rail systems with margin.
h_FE (min)	450 @ I_C = 10 µA - Ensures reliable DC bias stability in high-impedance amplifier input stages.
h_fe	600 @ f = 1 kHz - Confirmed small-signal current gain for audio-band amplification without peaking.
Noise Figure	3.0 dB @ I_C = 10 µA, RS = 10 kΩ - Low intrinsic noise supports precision sensor front-end designs.
R_θJA	357 °C/W - Thermal resistance on FR-4 PCB defines power derating slope (2.8 mW/°C above 25°C).
C_cb	4.0 pF @ V_CB = 5 V - Limits Miller effect in common-emitter configurations up to ~100 MHz.
P_D	350 mW @ T_A = 25°C - Continuous dissipation limit for SOT-23 package in ambient-convection environments.

Pinout & Package

SOT-23 plastic surface-mount package (marking: "117"), 3-pin, lead-free, RoHS-compliant. Dimensions per JEDEC MO-178AA: A0 = 3.15 mm, B0 = 2.77 mm, W = 8.0 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Connected to ground or bias network; polarity defines NPN operation and current flow direction.
2 (Base)	Control input	Accepts low-current drive (e.g., 0.5 mA) to switch or linearly modulate collector current.
3 (Collector)	Current source output	Delivers amplified output current; requires external load resistor or active load for voltage gain.

Key Features

Feature	Design Value
Low-noise amplification	3.0 dB NF at 1 kHz enables clean signal recovery in microphone and thermocouple interfaces.
High DC current gain	h_FE ≥ 450 at microamp bias ensures stable quiescent point in battery-powered amplifiers.
Small-signal bandwidth	h_fe = 200 at 100 MHz supports RF pre-driver and IF amplifier applications.
Thermal robustness	T_J range −55°C to +150°C allows deployment in automotive under-hood and industrial control environments.
Standardized footprint	SOT-23 package enables drop-in replacement of MMBT3904, PN2222A, and other 3-pin NPN transistors.

Applications

Audio Preamp Stage	Sensor Signal Conditioning
Use Scenario: Amplifying weak signals from electret microphones or piezoelectric sensors before ADC sampling. IC Role / Device Role / Timing Role: Discrete NPN transistor configured in common-emitter topology for voltage gain and impedance transformation. Use Value: 3.0 dB noise figure and h_FE ≥ 450 ensure high SNR and minimal signal degradation at sub-mV input levels.	Use Scenario: Boosting low-level outputs from temperature sensors (e.g., thermistors) or strain gauges in data acquisition modules. IC Role / Device Role / Timing Role: Linear amplifier stage providing fixed gain with low thermal drift and predictable h_FE variation. Use Value: Stable h_FE across I_C = 10 µA–10 mA enables accurate gain calibration without trimming resistors.
Low-Power Oscillator Core	Interface Level Shifting
Use Scenario: Active element in Colpitts or Hartley oscillator circuits for local clock generation in portable instruments. IC Role / Device Role / Timing Role: Switching and amplifying element sustaining oscillation via tuned LC feedback network. Use Value: C_cb = 4.0 pF and h_fe = 600 at 1 kHz provide predictable phase shift and loop gain for stable 1–10 MHz operation.	Use Scenario: Translating logic-level signals between 3.3 V microcontrollers and 5 V peripheral ICs in mixed-voltage systems. IC Role / Device Role / Timing Role: Single-transistor level shifter operating in saturation or active region depending on direction. Use Value: V_CE(sat) = 0.2 V and fast switching enable <100 ns rise/fall times with minimal voltage drop and power loss.

Audio Preamp Stage

Sensor Signal Conditioning

Use Scenario: Amplifying weak signals from electret microphones or piezoelectric sensors before ADC sampling.

IC Role / Device Role / Timing Role: Discrete NPN transistor configured in common-emitter topology for voltage gain and impedance transformation.

Use Value: 3.0 dB noise figure and h_FE ≥ 450 ensure high SNR and minimal signal degradation at sub-mV input levels.

Use Scenario: Boosting low-level outputs from temperature sensors (e.g., thermistors) or strain gauges in data acquisition modules.

IC Role / Device Role / Timing Role: Linear amplifier stage providing fixed gain with low thermal drift and predictable h_FE variation.

Use Value: Stable h_FE across I_C = 10 µA–10 mA enables accurate gain calibration without trimming resistors.

Low-Power Oscillator Core

Interface Level Shifting

Use Scenario: Active element in Colpitts or Hartley oscillator circuits for local clock generation in portable instruments.

IC Role / Device Role / Timing Role: Switching and amplifying element sustaining oscillation via tuned LC feedback network.

Use Value: C_cb = 4.0 pF and h_fe = 600 at 1 kHz provide predictable phase shift and loop gain for stable 1–10 MHz operation.

Use Scenario: Translating logic-level signals between 3.3 V microcontrollers and 5 V peripheral ICs in mixed-voltage systems.

IC Role / Device Role / Timing Role: Single-transistor level shifter operating in saturation or active region depending on direction.

Use Value: V_CE(sat) = 0.2 V and fast switching enable <100 ns rise/fall times with minimal voltage drop and power loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3904	Lower h_FE (min 100 vs. 450), higher V_CE(sat) (0.3 V), same SOT-23 package.	Less suitable for ultra-low-noise or microamp-bias designs; better for digital switching than linear amplification.	Select MMBT3904 only when gain stability at low I_C is not required and cost is primary constraint.
PN2222A	TO-92 through-hole package, higher P_D (625 mW), identical V_CEO/h_FE specs but no NF rating.	Used where manual assembly, prototyping, or higher power dissipation is needed; lacks documented noise performance.	Choose PN2222A for breadboard validation or legacy through-hole designs; MMBT5962 preferred for production SMT audio/sensor boards.

Compared with MMBT3904 and PN2222A, the MMBT5962 uniquely combines SOT-23 manufacturability, verified 3.0 dB noise figure, and h_FE ≥ 450 at 10 µA - making it optimal for miniaturized, low-power analog signal chains where both gain linearity and noise floor matter.

Availability

MMBT5962 is available at Aetrix Electronics and suitable for audio preamplifier stages, sensor signal conditioning circuits, and low-power oscillator cores requiring stable component supply, consistent parametric performance, and long-term obsolescence management.

Supply support for MMBT5962 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global supplier of energy-efficient semiconductor solutions, specializing in power management, analog, and discrete devices for automotive, industrial, and consumer markets.

The MMBT5962 belongs to ON Semiconductor's general-purpose bipolar transistor product line, engineered specifically for low-noise, high-gain amplification in space-constrained, low-power analog signal paths.

FAQ

What is the maximum collector-emitter voltage rating for the MMBT5962?

The MMBT5962 has a maximum collector-emitter voltage (V_CEO) rating of 45 V at T_A = 25°C. This rating is defined under open-base conditions and must be derated at elevated ambient temperatures per the device's thermal characteristics. Exceeding 45 V risks irreversible breakdown and permanent damage to the MMBT5962 junction.

Does the MMBT5962 have a specified noise figure, and under what conditions is it measured?

Yes, the MMBT5962 has a specified noise figure of 3.0 dB measured at V_CE = 5.0 V, I_C = 10 µA, R_S = 10 kΩ, f = 1.0 kHz, and BW = 400 Hz. This value is documented in the official ON Semiconductor datasheet and reflects the device's suitability for low-noise preamplifier applications - a key differentiator versus standard general-purpose transistors like the MMBT3904.

What package type is used for the MMBT5962, and what is its marking code?

The MMBT5962 is supplied in the SOT-23 surface-mount package with a standardized 3-pin configuration and a top-side marking of "117". This marking is laser-etched or ink-printed and serves as the unique identifier for visual inspection and automated optical recognition during PCB assembly. The SOT-23 footprint matches JEDEC MO-178AA mechanical specifications.

How does the MMBT5962 compare to the 2N5962 variant in terms of electrical performance and packaging?

The MMBT5962 and 2N5962 share identical electrical specifications including V_CEO, h_FE, noise figure, and thermal limits - but differ in packaging: MMBT5962 uses SOT-23 for surface-mount assembly, while 2N5962 uses TO-92 for through-hole mounting. Both are manufactured on the same Fairchild Process 07 and are electrically interchangeable when package constraints allow.

Is the MMBT5962 suitable for use in automotive applications, and what temperature range does it support?

Yes, the MMBT5962 supports an operating junction temperature range of −55°C to +150°C, meeting extended temperature requirements for under-dash and engine-compartment automotive subsystems. While not AEC-Q101 qualified out-of-box, its thermal and electrical robustness makes it a candidate for non-safety-critical signal conditioning in automotive ECUs - subject to customer qualification per application-specific stress testing.

MMBT5962 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 200mV @ 500µA, 10mA

Current - Collector Cutoff (Max):: 2nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 600 @ 10mA, 5V

Power - Max:: 350 mW

Frequency - Transition:: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

MMBT5962 FAQ

1.How can I place an order for MMBT5962 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT5962 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT5962 reliable?

The price and inventory of MMBT5962 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT5962 is usually 5 days.

3.What payment methods are accepted for MMBT5962?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT5962 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT5962?

MMBT5962 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT5962 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT5962?

For technical support, including MMBT5962 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT5962 requirements.

6.How does Aetrix verify that MMBT5962 is sourced from the original manufacturer or authorized distributors?

All MMBT5962 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT5962 meets industry standards.

7.What is the process for return or replacement of MMBT5962?

All MMBT5962 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT5962, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT5962 part is unused and in its original packaging.

Return procedure for MMBT5962:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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