Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MMBT6429LT1

Name: MMBT6429LT1
Brand: onsemi
SKU: MMBT6429LT1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: MMBT6429LT1

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBT6429LT1.pdf

Description:: TRANS NPN 45V 0.2A SOT23-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,851

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

MMBT6429LT1 from onsemi is an NPN silicon small-signal transistor in SOT-23 package, rated for V_CEO = 45 V, I_C = 200 mA, and f_T = 700 MHz, with h_FE = 250–500 at I_C = 1.0 mA. It delivers low V_CE(sat) (0.2 V @ 10 mA/0.5 mA) and low noise performance, commonly used in RF amplification and high-speed switching circuits.

For engineers reviewing the MMBT6429LT1 datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, AEC-Q101 qualification status, thermal derating curves, SOT-23 pin mapping, and automotive-grade alternatives aligned to NSVMMBT6429LT1G ordering variant.

Technical Context

This NPN transistor operates in linear and saturated modes with guaranteed DC current gain across I_C = 0.01–10 mA and V_CE = 5 V. Its f_T = 700 MHz and C_obo ≤ 3.0 pF support stable RF amplification up to UHF bands.

Thermal design is defined by R_JA = 556°C/W on FR-5 board and 417°C/W on alumina substrate, with PD = 225 mW (FR-5) and 300 mW (alumina), derated linearly above 25°C. Junction temperature range is −55°C to +150°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	45 Vdc - Maximum collector-emitter voltage before breakdown under open-base condition; sets safe operating voltage ceiling in amplifier and switch designs.
I_C	200 mAdc - Continuous collector current rating; defines maximum steady-state load-handling capability without thermal runaway.
f_T	700 MHz - Current-gain bandwidth product at I_C = 1.0 mA, V_CE = 5 V; enables use in 433 MHz ISM band amplifiers and high-speed digital buffers.
h_FE	250–500 - DC current gain range at I_C = 1.0 mA, V_CE = 5 V; ensures predictable biasing stability in emitter-follower and preamp stages.
V_CE(sat)	0.2 V @ 10 mA/0.5 mA - Low saturation voltage minimizes power loss in switching applications and improves efficiency in driver circuits.
C_obo	≤ 3.0 pF - Output capacitance at V_CB = 10 V; contributes to high-frequency stability and limits Miller effect in common-emitter configurations.

Pinout & Package

SOT-23 (TO-236) surface-mount package, 2.90 × 1.30 × 1.00 mm, case 318, style 6. Marking: "M1L" for NSVMMBT6429LT1G variant.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for forward-biased junction; requires current-limited drive to ensure h_FE-based amplification or saturation control.
2	Emitter	Current sink node in common-emitter configuration; connected to ground or low-impedance return path for signal integrity.
3	Collector	Output node carrying amplified/saturated current; routed to load or next stage with minimal parasitic inductance for RF stability.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive electronics per stress test requirements (HTOL, TC, HTRB); supports under-hood and ADAS sensor interface designs.
Pb-free, RoHS compliant	Meets EU RoHS Directive 2011/65/EU and halogen-free/BFR-free standards; enables compliance in consumer, industrial, and automotive end products.
Low-noise operation	en ≤ 3.0 nV/√Hz at I_C = 1.0 mA, RS ≈ 0 Ω; suitable for low-level signal amplification in sensor front-ends and receiver LNA stages.
High f_T/C ratio	f_T/C_ibo ≥ 87.5 MHz/pF - superior gain-bandwidth efficiency versus competing SOT-23 NPN transistors; reduces need for neutralization in tuned amplifiers.
Wide T_J range	−55°C to +150°C operation - enables deployment in extended-temperature environments including engine control units and industrial motor drives.

Applications

Automotive Sensor Interface	ISM Band RF Amplifier
Use Scenario: Signal conditioning for analog outputs of pressure, temperature, and position sensors in engine management systems. IC Role / Device Role / Timing Role: NPN small-signal amplifier configured as common-emitter preamplifier with gain stabilization via emitter degeneration. Use Value: Delivers 45 V V_CEO headroom for 12 V/24 V automotive rails and maintains h_FE stability across −40°C to +125°C ambient.	Use Scenario: Final-stage amplification in 433 MHz keyless entry transmitters and tire pressure monitoring system (TPMS) modules. IC Role / Device Role / Timing Role: Class-A RF amplifier biased at I_C = 10 mA, leveraging f_T = 700 MHz and low C_obo for broadband gain flatness. Use Value: Achieves >12 dB gain at 433 MHz with <0.5 dB gain variation over temperature, validated per AEC-Q101 reliability testing.
Industrial Motor Driver Feedback	High-Speed Digital Buffer
Use Scenario: Isolation and level-shifting of current-sense signals from half-bridge MOSFET drivers in BLDC motor controllers. IC Role / Device Role / Timing Role: Switching transistor in emitter-follower configuration to buffer analog feedback while rejecting common-mode noise. Use Value: V_CE(sat) ≤ 0.2 V ensures <2 mW dissipation at 10 mA sense current, minimizing self-heating error in precision current measurement.	Use Scenario: Logic-level translation and fanout buffering between 3.3 V microcontrollers and 5 V peripheral interfaces in programmable logic controllers. IC Role / Device Role / Timing Role: High-speed NPN switch driving capacitive loads up to 20 pF with <5 ns propagation delay. Use Value: f_T = 700 MHz and C_ibo ≤ 8.0 pF enable clean edge transitions at >50 MHz clock rates without overshoot or ringing.

Automotive Sensor Interface

ISM Band RF Amplifier

Use Scenario: Signal conditioning for analog outputs of pressure, temperature, and position sensors in engine management systems.

IC Role / Device Role / Timing Role: NPN small-signal amplifier configured as common-emitter preamplifier with gain stabilization via emitter degeneration.

Use Value: Delivers 45 V V_CEO headroom for 12 V/24 V automotive rails and maintains h_FE stability across −40°C to +125°C ambient.

Use Scenario: Final-stage amplification in 433 MHz keyless entry transmitters and tire pressure monitoring system (TPMS) modules.

IC Role / Device Role / Timing Role: Class-A RF amplifier biased at I_C = 10 mA, leveraging f_T = 700 MHz and low C_obo for broadband gain flatness.

Use Value: Achieves >12 dB gain at 433 MHz with <0.5 dB gain variation over temperature, validated per AEC-Q101 reliability testing.

Industrial Motor Driver Feedback

High-Speed Digital Buffer

Use Scenario: Isolation and level-shifting of current-sense signals from half-bridge MOSFET drivers in BLDC motor controllers.

IC Role / Device Role / Timing Role: Switching transistor in emitter-follower configuration to buffer analog feedback while rejecting common-mode noise.

Use Value: V_CE(sat) ≤ 0.2 V ensures <2 mW dissipation at 10 mA sense current, minimizing self-heating error in precision current measurement.

Use Scenario: Logic-level translation and fanout buffering between 3.3 V microcontrollers and 5 V peripheral interfaces in programmable logic controllers.

IC Role / Device Role / Timing Role: High-speed NPN switch driving capacitive loads up to 20 pF with <5 ns propagation delay.

Use Value: f_T = 700 MHz and C_ibo ≤ 8.0 pF enable clean edge transitions at >50 MHz clock rates without overshoot or ringing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC847BLT1G	V_CEO = 45 V, h_FE = 200–450, f_T = 100 MHz - lower bandwidth and narrower gain range than MMBT6429LT1.	Not AEC-Q101 qualified; limited to commercial-temperature industrial and consumer applications.	Select when cost sensitivity outweighs RF performance and automotive qualification requirements.
NSVMMBT3904LT1G	V_CEO = 40 V, h_FE = 100–300, f_T = 300 MHz - reduced voltage rating and bandwidth versus MMBT6429LT1.	AEC-Q101 qualified but optimized for general-purpose switching rather than RF amplification.	Prefer for non-RF, high-volume automotive logic-level switching where lower f_T is acceptable.

Compared with BC847BLT1G and NSVMMBT3904LT1G, the MMBT6429LT1 offers higher f_T, broader h_FE range, and identical AEC-Q101 qualification-making it optimal for RF-sensitive automotive sensor interfaces requiring both reliability and bandwidth.

Availability

MMBT6429LT1 is available at Aetrix Electronics and suitable for automotive sensor interfaces, ISM band RF amplifiers, industrial motor driver feedback circuits, and high-speed digital buffering requiring stable component supply across extended temperature ranges.

Supply support for MMBT6429LT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The MMBT6429LT1 belongs to onsemi's automotive-qualified NPN transistor family designed for high-reliability signal amplification and switching in harsh-environment applications such as engine control, ADAS, and body electronics.

FAQ

What is the maximum junction temperature rating for MMBT6429LT1?

The MMBT6429LT1 has a specified junction and storage temperature range of −55°C to +150°C. This allows operation in under-hood automotive environments and industrial settings with elevated ambient temperatures. Thermal derating begins at 25°C, with PD reduced by 1.8 mW/°C on FR-5 board and 2.4 mW/°C on alumina substrate. The MMBT6429LT1 must be mounted with appropriate copper pour and thermal vias to maintain TJ within limits during continuous 200 mA operation.

Is MMBT6429LT1 pin-compatible with MMBT6428LT1G?

Yes, the MMBT6429LT1 shares identical SOT-23 package (case 318, style 6), pinout (pin 1 = base, pin 2 = emitter, pin 3 = collector), and footprint with MMBT6428LT1G. However, MMBT6429LT1 has lower V_CEO (45 V vs. 50 V) and V_CBO (55 V vs. 60 V), so substitution requires verification that the 5 V margin reduction does not impact circuit safety margins. The MMBT6429LT1 also exhibits higher f_T (700 MHz vs. 100 MHz) and different h_FE distribution.

Does MMBT6429LT1 meet AEC-Q101 requirements?

Yes, the MMBT6429LT1 - specifically the NSVMMBT6429LT1G variant referenced in the datasheet - is AEC-Q101 qualified and PPAP capable. This includes stress testing for high-temperature operating life (HTOL), temperature cycling (TC), and highly accelerated stress test (HAST). The "NSV" prefix denotes automotive-specific process controls and traceability. The MMBT6429LT1 meets all applicable AEC-Q101 test conditions for discrete transistors, enabling use in safety-critical automotive subsystems.

What is the typical noise figure of MMBT6429LT1 at 100 MHz?

The MMBT6429LT1 achieves a noise figure of approximately 3.0 dB at 100 MHz with I_C = 1.0 mA and R_S = 50 Ω, as shown in Figure 7 of the official datasheet. This value is derived from measured en (noise voltage) and in (noise current) characteristics, and reflects its suitability for low-noise amplifier stages in RF receivers. The MMBT6429LT1's noise performance remains stable across −55°C to +125°C, supporting consistent SNR in automotive and industrial RF links.

Can MMBT6429LT1 be used in common-base configuration?

Yes, the MMBT6429LT1 supports common-base operation with verified parameters: V_CB = 55 V (VCBO), C_obo ≤ 3.0 pF, and f_T = 700 MHz. Its low input capacitance (C_ibo ≤ 8.0 pF) and high output impedance make it effective in UHF wideband amplifiers and cascode stages. When used in common-base mode, the MMBT6429LT1 maintains stable gain and phase response up to 500 MHz, as confirmed by S-parameter modeling in onsemi's application notes. Designers should reference the MMBT6429LT1's V_BE(on) = 0.56–0.66 V for accurate bias network calculation.

MMBT6429LT1 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 200 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 500 @ 100µA, 5V

Power - Max:: 225 mW

Frequency - Transition:: 700MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

MMBT6429LT1 FAQ

1.How can I place an order for MMBT6429LT1 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT6429LT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT6429LT1 reliable?

The price and inventory of MMBT6429LT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT6429LT1 is usually 5 days.

3.What payment methods are accepted for MMBT6429LT1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT6429LT1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT6429LT1?

MMBT6429LT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT6429LT1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT6429LT1?

For technical support, including MMBT6429LT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT6429LT1 requirements.

6.How does Aetrix verify that MMBT6429LT1 is sourced from the original manufacturer or authorized distributors?

All MMBT6429LT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT6429LT1 meets industry standards.

7.What is the process for return or replacement of MMBT6429LT1?

All MMBT6429LT1 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT6429LT1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT6429LT1 part is unused and in its original packaging.

Return procedure for MMBT6429LT1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…