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onsemi MMBT6517LT1G
- Part No.:
- MMBT6517LT1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
MMBT6517LT1G.pdf
- Description:
- TRANS NPN 350V 0.1A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,740
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Product details
Overview
MMBT6517LT1G from onsemi is an NPN silicon high-voltage transistor rated for VCEO = 350 V and VCBO = 350 V, with continuous collector current of 100 mA and DC current gain (hFE) up to 200 at IC = 1.0 mA. It operates across −55°C to +150°C and is AEC−Q101 qualified for automotive applications such as ignition coil drivers and HV sensing circuits.
For engineers reviewing the MMBT6517LT1G datasheet, pinout, applications, or equivalent options, key selection criteria include high-voltage breakdown integrity, SOT−23 thermal performance on FR−5 board (RJA = 556°C/W), fT bandwidth (40–200 MHz), and Pb−free RoHS compliance in automotive-grade packaging.
Technical Context
This NPN transistor is designed for high-voltage switching and linear amplification where robust VCEO/VCBO ratings and low leakage (ICBO ≤ 50 nA at VCB = 250 V) are critical. Its fT range supports RF and fast-switching applications up to 200 MHz under defined bias conditions.
The device uses a planar epitaxial structure with optimized base doping to achieve stable hFE across temperature (−55°C to +125°C) and low VCE(sat) (0.30 V at IC/IB = 10) - enabling efficient operation in pulse-driven HV loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 350 V - Enables direct interface with 277 VAC line-derived rails or flyback snubbers without external clamping |
| IC (continuous) | 100 mA - Supports medium-current switching in ignition modules and HV sensor bias networks |
| hFE | 20–200 - Wide gain range allows flexible bias design across operating points (1–100 mA) |
| fT | 40–200 MHz - Suitable for RF amplifier stages and fast digital switching (tr/tf < 10 ns typical) |
| RJA (FR−5) | 556°C/W - Limits power dissipation to 225 mW at 25°C ambient; requires thermal derating above TA |
| VBE(on) | ≤2.0 V at IC = 100 mA - Ensures reliable turn-on with standard logic-level base drive |
Pinout & Package
SOT−23 (TO−236AB), Case 318, Style 6 - 2.90 × 1.30 × 1.00 mm surface-mount package with gull-wing leads; Pb−free, halogen-free, RoHS compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal for forward-biased junction; accepts 25 mA max base current per rating |
| 2 | Emiter | Current return path; tied to ground or low-side reference in common-emitter configurations |
| 3 | Collector | High-voltage output node; rated for 350 V blocking and 100 mA conduction |
Key Features
| Feature | Design Value |
|---|---|
| AEC−Q101 qualified | Validated for automotive underhood use including temperature cycling, HTRB, and ESD testing |
| VCEO = VCBO = 350 V | Eliminates need for external voltage clamping in 277 VAC or 400 VDC bus interfaces |
| ICBO ≤ 50 nA @ 250 V | Minimizes standby leakage in always-on HV monitoring circuits |
| fT ≥ 40 MHz @ IC = 10 mA | Supports stable small-signal amplification in feedback loops up to 20 MHz |
| VCE(sat) = 0.30 V @ IC/IB = 10 | Reduces conduction loss in pulsed HV switch applications (e.g., fuel injector drivers) |
Applications
| Automotive Ignition Coil Driver | Industrial HV Sensor Bias |
|---|---|
Use Scenario: Driving primary winding of distributorless ignition coils in 12 V vehicle systems with 350 V flyback spikes. IC Role / Device Role / Timing Role: High-voltage NPN switch controlling coil energization and collapse timing. Use Value: Withstands 350 V transient spikes without snubber, reducing BOM count and PCB area vs. lower-VCEO alternatives. |
Use Scenario: Providing stable bias current to piezoresistive pressure sensors in hydraulic control units operating at 24–48 V supply. IC Role / Device Role / Timing Role: Precision current source with low leakage and high PSRR for sensor excitation. Use Value: ICBO ≤ 50 nA ensures <0.1% error contribution in µA-level bias networks over temperature. |
| AC Line Voltage Detection | LED Driver Pre-regulator |
Use Scenario: Detecting presence of 277 VAC line voltage via resistive divider and transistor switching into microcontroller input. IC Role / Device Role / Timing Role: High-impedance voltage level translator isolating MCU from mains-referenced signals. Use Value: VEBO = 5.0 V and VCEO = 350 V enable safe, single-transistor AC detection without optocoupler. |
Use Scenario: Regulating input to constant-current LED driver ICs in streetlight fixtures with 300 VDC intermediate bus. IC Role / Device Role / Timing Role: Linear pre-regulator dissipating excess voltage before buck converter stage. Use Value: RJA = 417°C/W on alumina substrate enables 300 mW dissipation at 25°C - sufficient for 50 mA × 10 V drop. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZTX653 | VCEO = 300 V (50 V lower); hFE min = 100 at IC = 10 mA; SOT−23 but non-AEC−Q101 | Not qualified for automotive; limited to industrial HV sensing where 300 V margin suffices | Select when AEC−Q101 is not required and cost sensitivity outweighs 50 V safety margin |
| BC817-40LT1G | VCEO = 45 V; hFE = 250–630; same SOT−23 footprint but incompatible voltage rating | Only suitable for low-voltage logic-level switching - not a functional substitute for MMBT6517LT1G's HV role | Use only in non-HV designs where gain and saturation voltage are prioritized over breakdown rating |
Compared with ZTX653 and BC817-40LT1G, the MMBT6517LT1G uniquely combines AEC−Q101 qualification, 350 V breakdown, and SOT−23 thermal capability - making it the sole choice for automotive-grade HV switching where both reliability and voltage margin are mandatory.
Availability
MMBT6517LT1G is available at Aetrix Electronics and suitable for automotive ignition systems, industrial HV sensor interfaces, and AC line detection circuits requiring stable component supply and long-term lifecycle support.
Supply support for MMBT6517LT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.
The MMBT6517LT1G belongs to onsemi's high-voltage bipolar transistor product line, engineered specifically for automotive and industrial applications demanding robust 350 V breakdown, AEC−Q101 compliance, and SOT−23 thermal performance.
FAQ
What is the maximum collector-emitter voltage rating for MMBT6517LT1G?
The MMBT6517LT1G has a guaranteed minimum V(BR)CEO of 350 V at IC = 1.0 mA, confirmed in the official onsemi datasheet Rev. 8. This rating applies under DC conditions and defines the absolute maximum voltage the device can block in common-emitter configuration without breakdown. Exceeding this voltage risks irreversible damage.
Is MMBT6517LT1G suitable for automotive applications?
Yes, the MMBT6517LT1G is explicitly AEC−Q101 qualified and PPAP capable, as stated in its datasheet features section. The NSV prefix in the ordering part NSVMMBT6517LT1G denotes automotive-specific site and control change requirements - confirming its suitability for under-hood and safety-critical automotive systems.
What is the thermal resistance of MMBT6517LT1G on FR−5 board?
The MMBT6517LT1G has a thermal resistance RJA of 556°C/W when mounted on an FR−5 board (1.0 × 0.75 × 0.062 in.), per the Thermal Characteristics table in the datasheet. This value governs power derating: PD drops by 1.8 mW/°C above 25°C ambient, limiting usable dissipation to 225 mW at room temperature.
Does MMBT6517LT1G have Pb−free and RoHS compliance?
Yes, the MMBT6517LT1G is Pb−free, halogen-free/BFR-free, and RoHS compliant, as documented in the Features section of the onsemi datasheet. The "G" suffix in the part number and marking diagram confirm Pb−free packaging, and the device meets EU RoHS Directive 2011/65/EU requirements.
What is the DC current gain (hFE) range for MMBT6517LT1G at different collector currents?
The MMBT6517LT1G exhibits hFE = 20–200 depending on operating point: min 20/max 200 at IC = 1.0 mA; min 30/max 200 at IC = 10 mA; min 30 at IC = 30 mA; min 20 at IC = 50 mA; min 15 at IC = 100 mA - all measured at VCE = 10 V and TA = 25°C per the Electrical Characteristics table.
MMBT6517LT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 350 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 20 @ 50mA, 10V
- Power - Max:
- 225 mW
- Frequency - Transition:
- 200MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
MMBT6517LT1G FAQ
1.How can I place an order for MMBT6517LT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBT6517LT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBT6517LT1G reliable?
The price and inventory of MMBT6517LT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT6517LT1G is usually 5 days.
3.What payment methods are accepted for MMBT6517LT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT6517LT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBT6517LT1G?
MMBT6517LT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBT6517LT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBT6517LT1G?
For technical support, including MMBT6517LT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT6517LT1G requirements.
6.How does Aetrix verify that MMBT6517LT1G is sourced from the original manufacturer or authorized distributors?
All MMBT6517LT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT6517LT1G meets industry standards.
7.What is the process for return or replacement of MMBT6517LT1G?
All MMBT6517LT1G units undergo pre-shipment inspection (PSI). If there is an issue with MMBT6517LT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBT6517LT1G part is unused and in its original packaging.
Return procedure for MMBT6517LT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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