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onsemi MMBT6517LT3G
- Part No.:
- MMBT6517LT3G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
MMBT6517LT3G.pdf
- Description:
- TRANS NPN 350V 0.1A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:9,707
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Product details
Overview
MMBT6517LT3G from onsemi is an NPN silicon high-voltage transistor rated for 350 V VCEO and 100 mA IC, with hFE = 20–200 (IC = 1.0–100 mA), fT = 40–200 MHz, and SOT-23 package. It serves as a high-voltage switching element in flyback snubber circuits, relay drivers, and automotive ignition modules.
For engineers reviewing the MMBT6517LT3G datasheet, pinout, applications, or equivalent options, key selection criteria include breakdown voltage margin, DC current gain at operating collector current, saturation voltage under defined drive conditions, thermal resistance on FR-5 board (556 °C/W), and AEC-Q101 qualification status.
Technical Context
This NPN transistor operates in linear or saturated switching mode with VCEO = 350 V and VCBO = 350 V, enabling use in high-side switch configurations where collector swings above 300 V. Its fT ≥ 40 MHz supports moderate-speed switching up to ~10 MHz with controlled rise/fall times.
Thermal performance is defined for two mounting conditions: 225 mW PD on FR-5 board (derating 1.8 mW/°C) and 300 mW on alumina substrate (derating 2.4 mW/°C). Junction temperature range is −55 °C to +150 °C, supporting automotive under-hood deployment.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 350 V - Supports operation in 277 VAC line-derived circuits with safety margin. |
| IC (continuous) | 100 mA - Suitable for driving small relays, optocouplers, or gate resistors in HV MOSFET stages. |
| hFE | 20–200 - Gain varies significantly with IC; design must verify bias stability across 1–100 mA load range. |
| VCE(sat) | 0.30–1.0 V @ IC/IB = 10–5 - Low saturation voltage reduces conduction loss in pulsed HV switching. |
| fT | 40–200 MHz - Enables reliable switching at ≤10 MHz with predictable turn-on/off timing (tr, tf < 10 ns). |
| RJA (FR-5) | 556 °C/W - Requires careful PCB copper area planning for >50 mA continuous operation at ambient >70 °C. |
Pinout & Package
SOT-23 (TO-236AB), case 318, style 6: 3-pin surface-mount plastic package, 2.90 × 1.30 × 1.00 mm body, 1.90 mm lead pitch. Marking "1Z" denotes device code; "M" indicates Pb-free package and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input; requires current-limited drive (IB ≤ 25 mA) to ensure safe saturation without overdrive. |
| 2 | Emitter | Reference node for base-emitter junction; connected to circuit ground or low-side return path. |
| 3 | Collector | High-voltage output node; rated for 350 V swing relative to emitter; connects to inductive loads or HV rails. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control and lighting modules requiring reliability under thermal cycling and vibration. |
| Pb-free, Halogen-free, RoHS compliant | Meets global environmental compliance mandates without compromising solderability or long-term intermetallic stability. |
| V(BR)CEO = 350 V | Enables direct interface with 277 VAC rectified rails or 200 VDC bus systems without external voltage clamping. |
| Low VCE(sat) at IC = 10–50 mA | Reduces power dissipation to <150 mW in typical relay driver use, easing thermal management on compact PCBs. |
| Ccb ≤ 6.0 pF | Minimizes Miller effect in high-speed switching, supporting clean edge integrity in pulse-width modulated HV stages. |
Applications
| Automotive Ignition Coil Driver | Flyback Converter Snubber |
|---|---|
Use Scenario: Switching 300–400 V transients generated during primary coil collapse in distributorless ignition systems. IC Role / Device Role / Timing Role: High-voltage NPN switch absorbing inductive kickback; operates in single-pulse, low-duty-cycle mode. Use Value: 350 V VCEO rating provides 20% margin over peak coil flyback voltage; fast turn-off (tf < 100 ns) limits energy dissipation. |
Use Scenario: Clamping voltage spikes across transformer primary windings in offline AC/DC flyback converters. IC Role / Device Role / Timing Role: Passive snubber transistor conducting only during transient overvoltage events; biased into saturation by RC network. Use Value: Low VCE(sat) (<0.5 V) minimizes clamp loss; Ccb ≤ 6 pF avoids resonance with snubber capacitor. |
| Industrial Relay Interface | High-Voltage Signal Level Shifter |
Use Scenario: Driving 24–48 VDC relays from 3.3 V or 5 V microcontroller GPIO pins in PLC I/O modules. IC Role / Device Role / Timing Role: Current-amplifying interface between logic-level controller and inductive relay coil. Use Value: hFE ≥ 30 at IC = 10 mA ensures full saturation with ≤0.33 mA base drive; 100 mA IC rating covers relay hold current with margin. |
Use Scenario: Translating low-voltage PWM signals (e.g., 0–5 V) to control 100–300 V gate drivers or optocoupler inputs in HV inverters. IC Role / Device Role / Timing Role: Level-shifting switch isolating logic domain from HV domain via open-collector output. Use Value: 350 V collector swing capability allows direct connection to HV rails; fT ≥ 40 MHz preserves PWM edge fidelity up to 5 MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZTX653 | VCEO = 300 V (50 V lower); hFE min = 100 @ IC = 10 mA; same SOT-23 package. | Not suitable for 277 VAC-derived rails; preferred where higher guaranteed gain at mid-current is prioritized over voltage headroom. | Select ZTX653 only if system max VCE remains ≤280 V and tighter hFE tolerance is required. |
| BCV61B | VCEO = 300 V; fT = 100 MHz (typ); RJA = 625 °C/W on FR-5 - 12% higher thermal resistance than MMBT6517LT3G. | Lower voltage rating and worse thermal performance limit use in thermally constrained automotive modules. | Choose BCV61B only for non-automotive, low-duty-cycle applications below 70 °C ambient with <50 mA average current. |
Compared with ZTX653 and BCV61B, the MMBT6517LT3G delivers superior voltage margin (350 V), lower thermal resistance (556 vs. ≥625 °C/W), and AEC-Q101 qualification - making it the only option qualified for automotive under-hood switching where both voltage stress and thermal reliability are critical.
Availability
MMBT6517LT3G is available at Aetrix Electronics and suitable for automotive ignition systems, industrial relay interfaces, flyback snubber circuits, and high-voltage level-shifting applications requiring stable component supply and long-term lifecycle support.
Supply support for MMBT6517LT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, medical, and IoT markets.
The MMBT6517LT3G belongs to onsemi's high-voltage bipolar transistor product line, engineered specifically for robust switching in automotive ignition, industrial power supplies, and HV interface circuits where reliability under voltage and thermal stress is mandatory.
FAQ
What is the maximum collector-emitter voltage rating for MMBT6517LT3G?
The MMBT6517LT3G has a guaranteed minimum V(BR)CEO of 350 V at IC = 1.0 mA. This rating is validated per JEDEC JESD22-A114 and applies under DC or pulsed conditions with proper heatsinking. The MMBT6517LT3G must not be operated beyond this voltage in any application, including transient spikes, unless externally clamped.
Is MMBT6517LT3G suitable for automotive applications?
Yes, the MMBT6517LT3G is AEC-Q101 qualified and PPAP capable, with test records covering HTOL, temperature cycling, HAST, and mechanical shock. It is explicitly designed for automotive subsystems such as ignition coil drivers and body control modules where operation from −40 °C to +125 °C ambient is required. The MMBT6517LT3G meets these requirements per its published thermal and electrical specifications.
What is the DC current gain (hFE) range of MMBT6517LT3G across operating conditions?
The MMBT6517LT3G exhibits hFE = 20–200 depending on collector current: min 20 at IC = 100 mA, min 30 at IC = 30 mA, min 30 at IC = 10 mA, and min 20 at IC = 1.0 mA - all measured at VCE = 10 V and TA = 25 °C. The MMBT6517LT3G datasheet confirms this variation is intentional and process-controlled.
Does MMBT6517LT3G have a specified thermal resistance on standard FR-5 PCB?
Yes, the MMBT6517LT3G has RJA = 556 °C/W when mounted on a 1.0 × 0.75 × 0.062 inch FR-5 board at TA = 25 °C. Power dissipation must be derated by 1.8 mW/°C above 25 °C ambient. This value is measured per JESD51-2 and applies to the standard SOT-23 footprint with no added copper pour; adding thermal pads improves performance.
What are the pin assignments for MMBT6517LT3G in the SOT-23 package?
The MMBT6517LT3G uses SOT-23 package style 6: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This configuration is confirmed in the official onsemi mechanical drawing (case 318) and matches the marking diagram showing "1Z" orientation with base at lead 1. The MMBT6517LT3G must be placed with correct pin alignment to avoid functional failure or damage.
MMBT6517LT3G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 350 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 20 @ 50mA, 10V
- Power - Max:
- 225 mW
- Frequency - Transition:
- 200MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
MMBT6517LT3G FAQ
1.How can I place an order for MMBT6517LT3G through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBT6517LT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBT6517LT3G reliable?
The price and inventory of MMBT6517LT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT6517LT3G is usually 5 days.
3.What payment methods are accepted for MMBT6517LT3G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT6517LT3G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBT6517LT3G?
MMBT6517LT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBT6517LT3G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBT6517LT3G?
For technical support, including MMBT6517LT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT6517LT3G requirements.
6.How does Aetrix verify that MMBT6517LT3G is sourced from the original manufacturer or authorized distributors?
All MMBT6517LT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT6517LT3G meets industry standards.
7.What is the process for return or replacement of MMBT6517LT3G?
All MMBT6517LT3G units undergo pre-shipment inspection (PSI). If there is an issue with MMBT6517LT3G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBT6517LT3G part is unused and in its original packaging.
Return procedure for MMBT6517LT3G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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