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onsemi MMBT6520LT3
- Part No.:
- MMBT6520LT3
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
MMBT6520LT3.pdf
- Description:
- TRANS PNP 350V 0.5A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:9,540
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Product details
Overview
MMBT6520LT3 from onsemi is a high-voltage PNP silicon transistor designed for switching and linear amplification in high-breakdown-voltage applications. It delivers VCEO = −350 V, IC = −500 mA continuous, and hFE ≥ 20 at IC = −100 mA, operating reliably from −55 °C to +150 °C in SOT-23 packages. It is used in flyback converter snubber circuits, relay drivers, and industrial HV power supply protection stages.
For engineers reviewing the MMBT6520LT3 datasheet, pinout, applications, or equivalent options, key selection criteria include verified −350 V breakdown rating, SOT-23 thermal derating (2.4 mW/°C on alumina), and AEC-Q101 qualification status for automotive-grade reliability validation.
Technical Context
This PNP bipolar junction transistor operates with emitter-grounded configuration and supports high-voltage switching up to −350 V across collector-emitter and collector-base terminals. Its fT of 40–200 MHz enables use in medium-frequency switching control loops and pulse-width modulated gate drive interfaces.
Thermal performance is defined for two mounting conditions: FR-5 board (RJA = 556 °C/W) and 99.5% alumina substrate (RJA = 417 °C/W), with corresponding power dissipation limits of 225 mW and 300 mW at 25 °C ambient. Saturation behavior is characterized at multiple IC/IB ratios, including VCE(sat) ≤ −0.30 V at IC = −10 mA/IB = −1.0 mA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −350 Vdc - Enables direct use in 300 V+ DC bus protection and flyback clamp circuits without series stacking. |
| IC Continuous | −500 mAdc - Supports relay coil driving and moderate-power load switching in space-constrained SOT-23 footprint. |
| hFE @ IC = −100 mA | 15–200 - Provides stable current gain over wide temperature range (−55 °C to +150 °C), critical for analog feedback paths. |
| VCE(sat) @ IC/IB = 10 | ≤ −0.30 V - Minimizes conduction loss in high-side switch configurations where emitter is tied to rail. |
| fT | 40–200 MHz - Allows integration into PWM controller auxiliary timing paths and fast transient response circuits. |
| Ccb | ≤ 6.0 pF - Limits Miller capacitance impact on switching speed in high-dV/dt environments like SMPS snubbers. |
Pinout & Package
SOT-23 (TO-236) package, 2.90 × 1.30 × 1.00 mm, 99.5% alumina-compatible mounting surface. Marking "2ZM" denotes device code and Pb-free compliance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Current-controlled input node; requires negative base current relative to emitter to turn on PNP device. |
| 2 | Emitter | High-side reference terminal; connected to positive rail in common-emitter switching topologies. |
| 3 | Collector | Output node handling −350 V reverse bias; routed to load or energy-dissipating network (e.g., snubber RC). |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive under-hood applications including engine control modules and HVAC power stages. |
| −350 V breakdown rating | Eliminates need for external voltage clamping in 230 VAC rectified bus and telecom -48 V backup systems. |
| Pb-free, Halogen-free/BFR-free | Complies with RoHS Directive 2011/65/EU and JESD201A Class 2A whisker resistance requirements. |
| Low VBE(sat) (≤ −0.90 V) | Reduces base drive power loss in high-duty-cycle switching, easing thermal design for discrete driver stages. |
Applications
| Industrial Flyback Snubber | Automotive Relay Driver |
|---|---|
|
Use Scenario: Absorbs leakage inductance energy during MOSFET turn-off in isolated flyback converters operating from 230 VAC mains. IC Role / Device Role / Timing Role: High-voltage PNP clamp transistor conducting only during MOSFET off-time to limit VDS overshoot. Use Value: Withstands −350 V repetitive stress and dissipates <100 mW per pulse, enabling compact, reliable snubber networks without TVS diodes. |
Use Scenario: Drives 12 V automotive relays in body control modules requiring AEC-Q101 compliance and >100,000 cycle lifetime. IC Role / Device Role / Timing Role: Discrete PNP switch controlling relay coil current with base resistor biasing and flyback diode integration. Use Value: Delivers −500 mA continuous collector current with VCE(sat) ≤ −0.35 V, minimizing coil heating and PCB trace losses. |
| Telecom -48 V Backup System | High-Voltage Sensor Interface |
|
Use Scenario: Isolates and switches backup battery paths in telecom power shelves where primary −48 V supply may fail. IC Role / Device Role / Timing Role: High-reliability PNP pass element enabling OR-ing functionality between main and backup sources. Use Value: Maintains safe operation at −48 V nominal with 7× safety margin (−350 V rating), supporting long-term field deployment without derating. |
Use Scenario: Level-shifts and buffers high-impedance sensor outputs (e.g., piezoelectric accelerometers) referenced to −200 V bias rails. IC Role / Device Role / Timing Role: Linear-mode PNP amplifier stage providing low-noise, high-input-impedance interface to downstream ADC front-ends. Use Value: Stable hFE ≥ 30 at IC = −10 mA ensures predictable gain accuracy across temperature, critical for precision measurement. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage PNP transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZTX653 | Higher VCEO (−400 V), lower hFE (min 10 at −100 mA), TO-92 package (larger footprint, higher RJA). | Preferred where absolute maximum voltage margin exceeds −350 V and board space allows through-hole mounting. | Select ZTX653 when system-level surge testing requires >−350 V headroom and thermal constraints permit TO-92's 400 °C/W RJA. |
| BC807-40 | Lower VCEO (−45 V), higher hFE (250–630), same SOT-23 package but not AEC-Q101 qualified. | Suitable for low-voltage logic-level switching but unsuitable for >−50 V applications or automotive environments. | Choose BC807-40 only for cost-sensitive consumer electronics with <−45 V operating voltage and no automotive qualification requirement. |
Compared with ZTX653 and BC807-40, the MMBT6520LT3 uniquely balances −350 V capability, SOT-23 compactness, and AEC-Q101 qualification-making it the only option among the three validated for automotive HV switching in space-constrained modules.
Availability
MMBT6520LT3 is available at Aetrix Electronics and suitable for industrial flyback snubbers, automotive relay drivers, and telecom −48 V backup systems requiring stable component supply and long-lifecycle support.
Supply support for MMBT6520LT3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The MMBT6520LT3 belongs to onsemi's high-voltage discrete transistor product line, engineered specifically for robust switching and protection functions in harsh-environment power conversion and control systems.
FAQ
What is the maximum collector-emitter voltage rating for MMBT6520LT3?
The MMBT6520LT3 has a guaranteed minimum VCEO rating of −350 Vdc at IC = −1.0 mA, confirmed per onsemi's official datasheet Rev. 8 (November 2024). This rating applies under continuous DC conditions and defines the absolute maximum reverse-biased voltage the device can sustain before breakdown. Exceeding this value risks irreversible damage to the MMBT6520LT3 junction.
Is MMBT6520LT3 qualified for automotive applications?
Yes, the MMBT6520LT3 is AEC-Q101 qualified and PPAP capable, as explicitly stated in its onsemi datasheet features section. The NSV prefix variant (NSVMMBT6520LT1G) further indicates automotive-specific site and change control requirements. This makes the MMBT6520LT3 suitable for under-hood and chassis-mounted automotive subsystems where reliability under thermal and vibration stress is mandatory.
What is the thermal resistance of MMBT6520LT3 on an alumina substrate?
When mounted on a 99.5% alumina substrate (0.4 × 0.3 × 0.024 in.), the MMBT6520LT3 exhibits a thermal resistance RJA of 417 °C/W at TA = 25 °C, with a derating factor of 2.4 mW/°C above that temperature. This value is documented in the Thermal Characteristics table of the official datasheet and directly impacts maximum allowable power dissipation in thermally demanding layouts.
Does MMBT6520LT3 have RoHS and halogen-free compliance?
Yes, the MMBT6520LT3 is Pb-free, halogen-free/BFR-free, and fully RoHS compliant, as confirmed in the Features section of the onsemi datasheet. The "G" suffix in part numbers like MMBT6520LT1G and MMBT6520LT3G denotes Pb-free packaging, and the device meets JEDEC JS709E and IPC-1752A material declaration standards.
What are the pin assignments for MMBT6520LT3 in the SOT-23 package?
The MMBT6520LT3 uses Style 6 pinout per onsemi's mechanical outline: Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector. This configuration is confirmed in the Marking Diagram and Mechanical Case Outline sections of the datasheet and must be observed to avoid incorrect biasing or circuit failure during layout and assembly of the MMBT6520LT3.
MMBT6520LT3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 350 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 20 @ 50mA, 10V
- Power - Max:
- 225 mW
- Frequency - Transition:
- 200MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
MMBT6520LT3 FAQ
1.How can I place an order for MMBT6520LT3 through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBT6520LT3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBT6520LT3 reliable?
The price and inventory of MMBT6520LT3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT6520LT3 is usually 5 days.
3.What payment methods are accepted for MMBT6520LT3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT6520LT3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBT6520LT3?
MMBT6520LT3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBT6520LT3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBT6520LT3?
For technical support, including MMBT6520LT3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT6520LT3 requirements.
6.How does Aetrix verify that MMBT6520LT3 is sourced from the original manufacturer or authorized distributors?
All MMBT6520LT3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT6520LT3 meets industry standards.
7.What is the process for return or replacement of MMBT6520LT3?
All MMBT6520LT3 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT6520LT3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBT6520LT3 part is unused and in its original packaging.
Return procedure for MMBT6520LT3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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