Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi MMBT6589T1G

Part No.:
MMBT6589T1G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
SOT-23-6 Thin, TSOT-23-6
Datasheet:
AetrixMMBT6589T1G.pdf
Description:
TRANS PNP 30V 1A 6-TSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,823

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MMBT6589T1G from onsemi is a high-current PNP silicon switching transistor in TSOP-6 package, rated for −30 V VCEO, −2.0 A peak collector current, and 925 mW power dissipation on 1.0×1.0 inch FR-4 pad. It delivers hFE ≥ 80 at −1.0 A and VCE(sat) ≤ −0.30 V at −1.0 A/−0.1 A drive, optimized for load management in portable battery-powered systems.

For engineers reviewing the MMBT6589T1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP switching capability, thermal performance under pulsed load conditions, ESD robustness (HBM Class 3), and Pb-free TSOP-6 compatibility with automated SMT assembly.

Technical Context

This device operates as a single high-current PNP bipolar junction transistor-no integrated biasing, logic, or protection circuitry. Its electrical behavior follows standard BJT DC and switching characteristics, with gain degradation above −1.0 A and saturation voltage increasing to −0.65 V at −2.0 A drive.

Thermal performance depends critically on PCB layout: RJA is 135 °C/W with 1.0×1.0 inch copper pad but degrades to 230 °C/W on minimum FR-4 pad. Safe operating area (SOA) is defined for single-pulse durations up to 10 s, with derating applied above 25°C ambient.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −30 V - Maximum allowable collector-emitter voltage before breakdown during switching off-state
IC (cont.) −1.0 A - Continuous DC current handling capacity at TA = 25°C with adequate heatsinking
VCE(sat) ≤ −0.30 V at IC = −1.0 A, IB = −0.1 A - Low saturation voltage enables <0.3 W conduction loss per switch
hFE ≥ 80 at IC = −1.0 A, VCE = −2.0 V - Sufficient current gain to support simple resistor-biased base drive
fT ≥ 100 MHz - Supports switching frequencies up to ~10–20 MHz with acceptable gain margin
RJA 135 °C/W (1.0×1.0″ pad) - Thermal resistance defines maximum power before junction exceeds 150°C
ESD Rating HBM Class 3 (>8 kV), MM Class C - Robust enough for handheld assembly without special ESD controls

Pinout & Package

Package: TSOP-6 (Case 318G, Style 7), 3.00 × 1.50 × 0.90 mm, 0.95 mm pitch, Pb-free (G-suffix).

Pin/Terminal Circuit Role Design Meaning
1, 2, 5 Collector Common high-side connection point; electrically tied internally for parallel current handling
3 Base Control input requiring negative current injection to turn on; typical RB ≈ 10–22 Ω for −1.0 A switching
6 Emiter Power return node; connected to system ground or battery negative in high-side load switch configurations
4 No Connect Internally unconnected; must remain floating-no routing or soldering required

Key Features

Feature Design Value
Pb-free TSOP-6 package RoHS-compliant surface-mount footprint compatible with IPC-7351B standard land patterns
High peak current rating −2.0 A pulsed capability supports motor startup, LED flash, or capacitor charging surges
Low VCE(sat) at high IC −0.30 V at −1.0 A reduces conduction loss by >40% vs. legacy PNP transistors like MMBT2907A
Thermally enhanced layout 925 mW dissipation on 1.0×1.0 inch pad enables use without external heatsink in space-constrained portable designs
ESD-hardened structure HBM Class 3 rating eliminates need for external TVS diodes in consumer-grade handheld PCBs

Applications

Smartphone Power Sequencing Wireless Headset Battery Protection

Use Scenario: Controlled enable/disable of PMIC rails during boot-up and sleep transitions.

IC Role / Device Role / Timing Role: High-side PNP switch isolating VBAT from downstream LDO inputs.

Use Value: MMBT6589T1G's −1.0 A continuous rating and −0.30 V VCE(sat) minimize voltage droop and heat generation during rail activation.

Use Scenario: Overcurrent cutoff between Li-ion cell and charging IC during fault conditions.

IC Role / Device Role / Timing Role: Fast-turnoff load switch triggered by protection IC's fault signal.

Use Value: MMBT6589T1G's 100 MHz fT ensures sub-microsecond response to overcurrent events, preventing thermal runaway.

USB-C Port Power Delivery Portable Medical Sensor Module

Use Scenario: VCONN power switching for USB-C cable orientation detection.

IC Role / Device Role / Timing Role: Low-duty-cycle PNP switch supplying 1–2 mA to cable electronics.

Use Value: MMBT6589T1G's −5.0 V VEBO and HBM Class 3 ESD withstand prevent latch-up or damage from hot-plug transients.

Use Scenario: Isolation of analog sensor supply during MCU deep-sleep mode.

IC Role / Device Role / Timing Role: Precision-controlled PNP switch enabling <1 µA standby leakage.

Use Value: MMBT6589T1G's −0.1 A ICBO and −0.1 A ICES ensure minimal quiescent current draw in battery-critical diagnostics.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
ZXTN25050DFHTA Higher VCEO (−50 V), lower hFE (min 50 @ −1 A), SOT-23-6 package Preferred where higher breakdown margin is needed, but requires larger base drive due to lower gain Select when system voltage exceeds 30 V or board space allows SOT-23-6; not drop-in due to different pinout and smaller thermal pad
MMBT2907ALT1G Lower IC (−600 mA), higher VCE(sat) (−0.65 V @ −500 mA), same TSOP-6 footprint Suitable for <500 mA loads where thermal budget is less constrained Use only if peak current stays below −0.6 A; MMBT6589T1G provides 67% higher current capacity and 54% lower conduction loss at rated load

Compared with ZXTN25050DFHTA and MMBT2907ALT1G, the MMBT6589T1G uniquely balances high current (−1.0 A), low saturation voltage (−0.30 V), and thermally optimized TSOP-6 layout-making it the preferred choice for compact, high-efficiency portable load switching where both performance and manufacturability matter.

Availability

MMBT6589T1G is available at Aetrix Electronics and suitable for smartphone power sequencing, wireless headset battery protection, and USB-C port power delivery requiring stable component supply across high-volume production cycles.

Supply support for MMBT6589T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MMBT6589T1G belongs to onsemi's high-current discrete transistor product line, engineered specifically for portable electronics load management-emphasizing low VCE(sat), robust SOA, and Pb-free SMT compatibility.

FAQ

What is the maximum continuous collector current rating for MMBT6589T1G?

The MMBT6589T1G is rated for −1.0 A continuous collector current at TA = 25°C with a 1.0×1.0 inch copper pad. Derating applies above 25°C ambient-7.4 mW/°C-so at 70°C ambient, max continuous current drops to approximately −0.66 A. This rating assumes proper PCB thermal design per datasheet Note 2.

Does MMBT6589T1G have a built-in base resistor or logic-level interface?

No, the MMBT6589T1G is a bare PNP bipolar transistor with no integrated base resistors or level-shifting circuitry. It requires external base current control-typically via a series resistor from a microcontroller GPIO or dedicated driver. Base-emitter turn-on voltage is −1.1 V at −1.0 A collector current.

Can MMBT6589T1G be used in high-frequency switching applications?

Yes-the MMBT6589T1G has a minimum fT of 100 MHz, supporting switching frequencies up to ~10–20 MHz in well-designed circuits. However, its SOA and thermal limits constrain duty cycle and pulse width; for >100 kHz PWM, verify safe operating area using Figure 7 and apply appropriate gate/base drive strength.

What is the meaning of "Style 7" in the MMBT6589T1G package marking diagram?

"Style 7" refers to the internal pin configuration for the TSOP-6 package: Pin 1 = Collector, Pin 2 = Collector, Pin 3 = Base, Pin 4 = No Connect, Pin 5 = Collector, Pin 6 = Emitter. This layout maximizes collector current handling through three parallel pins while isolating the base and emitter for clean control and return paths.

Is MMBT6589T1G suitable for automotive applications?

The MMBT6589T1G is not AEC-Q101 qualified and is specified for −55°C to +150°C junction temperature, but lacks automotive-specific qualification, stress testing, or PPAP documentation. It may be used in non-safety-critical automotive accessories only after full system-level validation-including thermal, EMC, and lifetime reliability testing.

MMBT6589T1G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
30 V
Vce Saturation (Max) @ Ib, Ic:
650mV @ 200mA, 2A
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 500mA, 2V
Power - Max:
540 mW
Frequency - Transition:
100MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP

MMBT6589T1G FAQ

1.How can I place an order for MMBT6589T1G through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT6589T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT6589T1G reliable?

The price and inventory of MMBT6589T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT6589T1G is usually 5 days.

3.What payment methods are accepted for MMBT6589T1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT6589T1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT6589T1G?

MMBT6589T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT6589T1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT6589T1G?

For technical support, including MMBT6589T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT6589T1G requirements.

6.How does Aetrix verify that MMBT6589T1G is sourced from the original manufacturer or authorized distributors?

All MMBT6589T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT6589T1G meets industry standards.

7.What is the process for return or replacement of MMBT6589T1G?

All MMBT6589T1G units undergo pre-shipment inspection (PSI). If there is an issue with MMBT6589T1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT6589T1G part is unused and in its original packaging.

Return procedure for MMBT6589T1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MMBT6589T1G Tags

  • MMBT6589T1G
  • MMBT6589T1G PDF
  • MMBT6589T1G Datasheet
  • MMBT6589T1G Specifications
  • MMBT6589T1G Images
  • onsemi
  • onsemi MMBT6589T1G
  • Buy MMBT6589T1G
  • MMBT6589T1G Price
  • MMBT6589T1G Distributor
  • MMBT6589T1G Supplier
  • MMBT6589T1G Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER