Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi MMBTA06

Part No.:
MMBTA06
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixMMBTA06.pdf
Description:
TRANS NPN 80V 0.5A SOT-23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,842

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MMBTA06 from ON Semiconductor is an NPN general-purpose amplifier transistor in SOT-23 package, rated for 80 V VCEO, 500 mA IC, and 350 mW PD at 25°C, with hFE ≥ 100 at 10–100 mA, used in low-power linear amplification and switching stages of consumer and industrial signal conditioning circuits.

For engineers reviewing the MMBTA06 datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, thermal limits, SOT-23 terminal mapping, and validated alternative transistors for discrete amplifier and switch design validation.

Technical Context

The MMBTA06 operates as a silicon NPN bipolar junction transistor optimized for general-purpose amplification up to 100 MHz fT, with VCE(sat) ≤ 0.25 V at IC = 100 mA / IB = 10 mA and VBE(on) ≈ 1.2 V under same conditions. Its 357 °C/W RθJA reflects thermal performance on standard FR-4 PCBs.

Designed for continuous collector currents up to 500 mA and junction temperatures from –55°C to +150°C, the device supports stable DC biasing and small-signal gain across industrial ambient ranges, with ICEO ≤ 0.1 μA at VCE = 60 V ensuring low leakage in standby states.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 80 V - Maximum safe collector-emitter voltage before breakdown; enables use in 24–48 V supply rail interfaces.
IC (max) 500 mA - Continuous collector current rating; supports medium-current driver and pre-driver stages.
hFE ≥100 at IC = 10–100 mA - Confirmed DC current gain ensures predictable base drive sizing in amplifier and switch designs.
fT 100 MHz - Gain-bandwidth product validates suitability for audio and low-MHz signal amplification.
PD @ 25°C 350 mW - Power dissipation limit in SOT-23 package; requires thermal derating above 25°C at 2.8 mW/°C.
RθJA 357 °C/W - Junction-to-ambient thermal resistance on standard FR-4; informs heatsinking requirements for sustained operation.

Pinout & Package

SOT-23 3-lead plastic surface-mount package with gull-wing leads; compact footprint (2.92 × 1.30 mm) and low profile (1.20 mm max height); marked "1G" on top surface.

Pin/Terminal Circuit Role Design Meaning
1 (Emitter) E Current sink node; connects to ground or low-impedance return path in common-emitter configurations.
2 (Base) B Control input; requires current-limited drive (e.g., via series resistor) to achieve target IC per hFE.
3 (Collector) C Current source node; ties to load or higher-voltage rail; handles full output current and voltage swing.

Key Features

Feature Design Value
NPN bipolar architecture Enables classic common-emitter amplification and saturated switching with predictable VCE(sat) and hFE behavior.
80 V VCEO rating Supports operation across 12–48 V systems without risk of avalanche breakdown under normal bias conditions.
350 mW power rating in SOT-23 Delivers usable gain and switching capability in space-constrained PCB layouts without requiring TO-92 through-hole real estate.
hFE ≥ 100 (10–100 mA) Reduces required base drive current and simplifies bias network design for consistent turn-on in linear and switching modes.
100 MHz fT Ensures adequate bandwidth for audio-frequency amplification and fast digital switching (ton/toff < 100 ns typical).

Applications

Audio Pre-Amplifier Stage Low-Voltage Relay Driver

Use Scenario: Amplifying microphone-level signals (1–10 mV) to line-level (0.3–1 V) in portable audio recorders and headset interfaces.

IC Role / Device Role / Timing Role: Discrete NPN amplifier in common-emitter configuration with emitter degeneration for stable gain and low distortion.

Use Value: hFE ≥ 100 and fT = 100 MHz ensure flat 20 Hz–20 kHz response with <1% THD at 100 mW output into 32 Ω.

Use Scenario: Driving 5–12 V coil relays (e.g., 70–150 Ω, 40–100 mA hold current) from microcontroller GPIO pins.

IC Role / Device Role / Timing Role: Saturated switch controlling relay coil current with minimal VCE(sat) to reduce power loss and heat buildup.

Use Value: VCE(sat) ≤ 0.25 V at IC = 100 mA limits coil-side dissipation to <25 mW, enabling reliable operation without heatsinking.

LED Current Regulator Signal Level Shifter

Use Scenario: Constant-current driving of indicator LEDs (20–30 mA) from 3.3 V or 5 V logic rails in industrial HMI panels.

IC Role / Device Role / Timing Role: Emitter-follower configured transistor regulating LED current via base voltage reference and emitter resistor.

Use Value: VCEO = 80 V and IC = 500 mA allow margin for transient overvoltage and multi-LED string expansion.

Use Scenario: Translating 1.8 V logic outputs to 3.3 V or 5 V input thresholds in mixed-voltage MCU peripherals (e.g., UART, SPI).

IC Role / Device Role / Timing Role: Common-emitter level shifter with pull-up on collector and base driven by low-voltage signal.

Use Value: fT = 100 MHz and fast saturation support clean edge transitions up to 10 Mbps without pulse distortion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC846B Lower VCEO (65 V), identical SOT-23 package and hFE range (110–220), but lower PD (250 mW). Not suitable for 48 V rail interfaces; acceptable only where VCE < 60 V and power < 200 mW. Select BC846B only when operating voltage is capped at ≤60 V and thermal budget permits reduced dissipation.
PN2222A TO-92 package, higher PD (625 mW), same VCEO (60 V), hFE 100–300, but larger footprint and lower fT (~250 MHz but less consistent at low IC). Requires through-hole mounting and board area; better for high-current analog stages but incompatible with SMT-only assembly. Choose PN2222A when board space allows TO-92 and higher continuous power (>350 mW) is needed; not drop-in for MMBTA06.

Compared with BC846B and PN2222A, the MMBTA06 uniquely balances SOT-23 miniaturization, 80 V robustness, and 350 mW dissipation-making it optimal for space-constrained, medium-voltage amplifier and switch designs where TO-92 is impractical and 65 V limits are insufficient.

Availability

MMBTA06 is available at Aetrix Electronics and suitable for audio pre-amplifiers, low-voltage relay drivers, and LED current regulators requiring stable component supply and SMT-compatible packaging.

Supply support for MMBTA06 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The MMBTA06 belongs to ON Semiconductor's legacy general-purpose bipolar transistor portfolio, originally developed by Fairchild and maintained for cost-sensitive, high-volume linear and switching applications demanding reliability and broad temperature operation.

FAQ

What is the maximum collector-emitter voltage rating for the MMBTA06?

The MMBTA06 has a VCEO rating of 80 V, meaning it can safely withstand up to 80 volts between collector and emitter with the base open. This rating is confirmed in the Absolute Maximum Ratings table of the official ON Semiconductor datasheet for MMBTA06 and applies at TA = 25°C. Exceeding this voltage risks avalanche breakdown and permanent damage to the MMBTA06.

Is the MMBTA06 pin-compatible with the MPSA06 or PZTA06?

No-the MMBTA06 is not pin-compatible with the MPSA06 or PZTA06. While all three share identical electrical specifications, they differ in package and pinout: MMBTA06 uses SOT-23 (E-B-C), MPSA06 uses TO-92 (E-C-B), and PZTA06 uses SOT-223 (C-E-B-C with thermal tab). Substituting MMBTA06 for either requires PCB layout revision due to different footprints and terminal assignments.

What is the DC current gain (hFE) specification for the MMBTA06 at typical operating conditions?

The MMBTA06 guarantees hFE ≥ 100 at IC = 10 mA and VCE = 1.0 V, and also maintains hFE ≥ 100 at IC = 100 mA and VCE = 1.0 V. These values are specified in the Electrical Characteristics table of the MMBTA06 datasheet and reflect minimum guaranteed gain-not typical or average-ensuring design margin for base drive calculations in both small-signal and medium-current applications.

Can the MMBTA06 be used in switching applications, and what is its saturation voltage?

Yes, the MMBTA06 is suitable for switching applications, with a guaranteed VCE(sat) ≤ 0.25 V at IC = 100 mA and IB = 10 mA. This low saturation voltage minimizes conduction loss and self-heating during on-state operation, making the MMBTA06 effective in relay drivers, LED switches, and digital logic interface circuits where efficiency and thermal management are critical.

What is the thermal resistance (RθJA) of the MMBTA06, and how does it affect PCB layout?

The MMBTA06 has an RθJA of 357 °C/W when mounted on a standard FR-4 PCB (36 mm × 18 mm × 1.5 mm). This high value means even modest power dissipation (e.g., 200 mW) raises junction temperature by ~71°C above ambient-requiring careful copper pour design around the collector pad and avoidance of dense thermal islands. Layout must follow ON Semiconductor's recommended SOT-23 land pattern to maintain this spec for the MMBTA06.

MMBTA06 Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
80 V
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 1V
Power - Max:
350 mW
Frequency - Transition:
100MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

MMBTA06 FAQ

1.How can I place an order for MMBTA06 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBTA06 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBTA06 reliable?

The price and inventory of MMBTA06 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBTA06 is usually 5 days.

3.What payment methods are accepted for MMBTA06?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBTA06 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBTA06?

MMBTA06 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBTA06 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBTA06?

For technical support, including MMBTA06 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBTA06 requirements.

6.How does Aetrix verify that MMBTA06 is sourced from the original manufacturer or authorized distributors?

All MMBTA06 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBTA06 meets industry standards.

7.What is the process for return or replacement of MMBTA06?

All MMBTA06 units undergo pre-shipment inspection (PSI). If there is an issue with MMBTA06, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBTA06 part is unused and in its original packaging.

Return procedure for MMBTA06:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MMBTA06 Tags

  • MMBTA06
  • MMBTA06 PDF
  • MMBTA06 Datasheet
  • MMBTA06 Specifications
  • MMBTA06 Images
  • onsemi
  • onsemi MMBTA06
  • Buy MMBTA06
  • MMBTA06 Price
  • MMBTA06 Distributor
  • MMBTA06 Supplier
  • MMBTA06 Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER