Diodes Incorporated MMBTA28-13-F

Overview

MMBTA28-13-F from Diodes Incorporated is an 80V NPN Darlington transistor in SOT23 package, designed for low-power amplification and switching with BVCES ≥ 80 V, VCE(sat) ≤ 1.5 V at IC = 100 mA/IB = 100 µA, hFE ≥ 10,000 at IC = 10 mA, and AEC-Q101 qualification for automotive-grade reliability. It delivers high current gain in compact surface-mount form for signal-level control in space-constrained modules.

For engineers reviewing the MMBTA28-13-F datasheet, MMBTA28-13-F pinout, MMBTA28-13-F application, or MMBTA28-13-F equivalent, key selection criteria include guaranteed 80 V breakdown rating, Darlington-level hFE > 10k at 10 mA, SOT23 thermal resistance (RθJA = 403 °C/W on minimal pad), and AEC-Q101 stress-test compliance for automotive subsystems.

Technical Context

This Darlington pair integrates two NPN transistors in cascade to achieve ultra-high DC current gain while maintaining single-device simplicity. Its epitaxial planar die construction ensures stable hFE across temperature (–55°C to +150°C) and low leakage (ICES ≤ 500 nA at VCE = 60 V).

The device operates with a 12 V maximum emitter-base voltage and supports switching up to 100 mA continuous collector current. Its fT = 125 MHz enables use in moderate-speed digital logic interfacing and analog pre-amplification where gain stability outweighs RF performance.

Key Specifications

Pinout & Package

Package: SOT23 - Surface-mount plastic case, 0.008 g weight, UL 94V-0 rated, moisture sensitivity level 1, matte tin-plated leads solderable per MIL-STD-202.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Darlington transistor applications.

Compared with MMBTA28-13-F, MMBT6427-7-F trades breakdown voltage and gain for lower cost, while ZTX1048A offers higher power handling in through-hole format but forfeits automotive qualification and miniaturization benefits.

Availability

MMBTA28-13-F is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input stages, and medical device sensor interfaces requiring stable component supply and AEC-Q101 traceability.

Supply support for MMBTA28-13-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and integrated circuits, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The MMBTA28 belongs to Diodes' general-purpose bipolar transistor product line, engineered specifically for high-gain, low-power switching and amplification in automotive, industrial, and medical applications where reliability and compact packaging are critical.

FAQ

What is the maximum continuous collector current for MMBTA28-13-F?

The absolute maximum continuous collector current is 500 mA, but the recommended operating limit is 100 mA at TA = +25°C to maintain junction temperature within the –55°C to +150°C range. Derating is required above 25°C ambient, with full derating to zero at 150°C per the published derating curve.

Does MMBTA28-13-F include an integrated base resistor?

No, MMBTA28-13-F is a bare Darlington transistor without internal base resistors. External base biasing must be provided - typically via a series resistor from a logic-level source to Pin 2 (Base) - to set IB and ensure proper saturation at the target IC.

Can MMBTA28-13-F replace a standard NPN transistor like BC847 in existing designs?

Only with circuit redesign: its Darlington structure requires ~1.4 V VBE(on), higher base drive impedance, and exhibits slower turn-off due to stored charge. Direct substitution will cause incomplete turn-on or excessive base current draw unless base resistor values are increased by ~10× and timing margins are verified.

Is MMBTA28-13-F suitable for linear amplification applications?

Yes - its high hFE and low noise characteristics support low-distortion preamplifier use, but thermal limitations (310 mW PD) restrict it to small-signal stages. Avoid sustained operation near VCE = 5 V and IC > 30 mA to prevent thermal runaway; always verify stability with appropriate emitter degeneration.