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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MMBTA56_D87Z

Name: MMBTA56_D87Z
Brand: onsemi
SKU: MMBTA56_D87Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MMBTA56_D87Z

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBTA56_D87Z.pdf

Description:: TRANS PNP 80V 0.5A SOT-23-3

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Product details

Overview

MMBTA56_D87Z from ON Semiconductor is a PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications up to 300 mA collector current. It features -80 V collector-emitter breakdown voltage (V_(BR)CEO), DC current gain (h_FE) ≥100 at -10 mA, -1.0 V, and -0.25 V collector-emitter saturation voltage (V_CE(sat)) at -100 mA/-10 mA - used in low-voltage bias networks and signal inversion stages.

For engineers reviewing the MMBTA56_D87Z datasheet, pinout, applications, or equivalent options, this page delivers verified package mapping (SOT-23), validated terminal roles (Emitter/Collector/Base), absolute maximum ratings, thermal derating data, and two confirmed alternative PNP transistors with documented parameter differences.

Technical Context

This device operates as a discrete PNP amplifier with fixed gain structure optimized for linear amplification and saturated switching. Its V_BE(on) of -1.2 V at -100 mA and f_T of 50 MHz at -100 mA/V_CE = -1.0 V support audio preamp and low-speed digital interface functions.

Thermal performance is defined by R_θJA = 357 °C/W on FR-4 PCB (36 mm × 18 mm), with 350 mW total dissipation at 25 °C and 2.8 mW/°C linear derating - requiring careful layout for ambient temperatures above 70 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)CEO	-80 V - Maximum reverse-biased collector-emitter voltage before avalanche breakdown; sets safe operating range in negative-rail amplifier stages.
h_FE	≥100 at I_C = -10 mA, V_CE = -1.0 V - Ensures predictable current amplification in bias networks without external feedback compensation.
V_CE(sat)	-0.25 V at I_C = -100 mA, I_B = -10 mA - Enables low-loss switching in logic-level PNP driver circuits with <250 mV voltage drop across collector-emitter path.
f_T	50 MHz at I_C = -100 mA, V_CE = -1.0 V - Supports audio-frequency amplification and sub-50 MHz digital signal conditioning without gain roll-off.
P_D	350 mW at T_A = 25 °C - Defines maximum continuous power handling on standard SOT-23 PCB land pattern; requires thermal derating above ambient.
R_θJA	357 °C/W - Quantifies junction-to-ambient thermal resistance on specified FR-4 board; informs heatsinking requirements for sustained operation.

Pinout & Package

SOT-23 (TO-236AB) 3-lead plastic surface-mount package with gull-wing leads; marking "2G" on top surface. Standard JEDEC MO-178 footprint with 1.90 mm × 1.30 mm body size and 0.95 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current source terminal for PNP operation	Connected to higher potential rail (e.g., V_CC or bias supply); defines reference for base drive and collector load placement.
2 (Base)	Control input for minority-carrier injection	Receives negative-going drive signal to turn on; requires current-limiting resistor to set I_B per h_FE target.
3 (Collector)	Current sink terminal for output path	Connected to load (e.g., LED anode or pull-down resistor); polarity reversal relative to NPN devices enables high-side switching.

Key Features

Feature	Design Value
High V_(BR)CEO	-80 V rating allows use in industrial 24 V and automotive 12 V systems with margin against transients and ripple.
Low V_CE(sat)	-0.25 V saturation voltage minimizes conduction loss in PNP switch configurations, improving efficiency in battery-powered loads.
Stable h_FE over current range	h_FE ≥100 maintained from -10 mA to -100 mA, enabling consistent gain in variable-load amplifier stages without re-biasing.
JEDEC-compliant SOT-23	Standardized footprint ensures compatibility with automated pick-and-place equipment and reflow soldering profiles (J-STD-020).

Applications

Audio Preamp Stage	Level-Shifting Interface
Use Scenario: Amplifying microphone signals in portable voice recorders before ADC sampling. IC Role / Device Role / Timing Role: PNP common-emitter amplifier providing inverted gain with DC-coupled input and emitter-degenerated bias. Use Value: V_(BR)CEO = -80 V and h_FE ≥100 ensure headroom and linearity for ±2 V input swings while maintaining SNR >65 dB.	Use Scenario: Converting 3.3 V logic outputs to interface with 5 V or 12 V legacy peripherals. IC Role / Device Role / Timing Role: PNP-based active pull-up switch enabling bidirectional level translation without direction control pins. Use Value: V_CE(sat) = -0.25 V ensures <300 mV voltage drop at 10 mA load, preserving logic HIGH margin across supply domains.
LED Current Sink Driver	Power Supply Enable Switch
Use Scenario: Driving indicator LEDs in industrial HMI panels with 24 V supply rails. IC Role / Device Role / Timing Role: Saturated PNP switch controlling LED cathode connection to ground via collector-emitter path. Use Value: 350 mW power rating and -500 mA I_C max allow direct driving of up to 20 mA LEDs without external heat sinking.	Use Scenario: Enabling/disabling auxiliary 5 V LDO outputs in multi-rail embedded power systems. IC Role / Device Role / Timing Role: High-side PNP pass element controlled by microcontroller GPIO to gate downstream voltage rails. Use Value: -80 V V_CBO and -4.0 V V_EBO prevent base-emitter or base-collector breakdown during enable/disable transitions.

Audio Preamp Stage

Level-Shifting Interface

Use Scenario: Amplifying microphone signals in portable voice recorders before ADC sampling.

IC Role / Device Role / Timing Role: PNP common-emitter amplifier providing inverted gain with DC-coupled input and emitter-degenerated bias.

Use Value: V_(BR)CEO = -80 V and h_FE ≥100 ensure headroom and linearity for ±2 V input swings while maintaining SNR >65 dB.

Use Scenario: Converting 3.3 V logic outputs to interface with 5 V or 12 V legacy peripherals.

IC Role / Device Role / Timing Role: PNP-based active pull-up switch enabling bidirectional level translation without direction control pins.

Use Value: V_CE(sat) = -0.25 V ensures <300 mV voltage drop at 10 mA load, preserving logic HIGH margin across supply domains.

LED Current Sink Driver

Power Supply Enable Switch

Use Scenario: Driving indicator LEDs in industrial HMI panels with 24 V supply rails.

IC Role / Device Role / Timing Role: Saturated PNP switch controlling LED cathode connection to ground via collector-emitter path.

Use Value: 350 mW power rating and -500 mA I_C max allow direct driving of up to 20 mA LEDs without external heat sinking.

Use Scenario: Enabling/disabling auxiliary 5 V LDO outputs in multi-rail embedded power systems.

IC Role / Device Role / Timing Role: High-side PNP pass element controlled by microcontroller GPIO to gate downstream voltage rails.

Use Value: -80 V V_CBO and -4.0 V V_EBO prevent base-emitter or base-collector breakdown during enable/disable transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBTA55_D87Z	Complementary NPN device with +80 V V_(BR)CEO, identical SOT-23 package and h_FE ≥100, but opposite polarity.	Used where NPN topology is preferred (e.g., low-side switching, non-inverting amplifiers) rather than high-side PNP configuration.	Select MMBTA55_D87Z only when circuit topology requires NPN behavior; not a drop-in replacement due to polarity reversal.
BC807-40,215	PNP BJT in SOT-23 with V_(BR)CEO = -45 V, h_FE = 250–600, and V_CE(sat) = -0.3 V at -100 mA; lower voltage rating but higher gain.	Suitable for 5–12 V systems where higher h_FE reduces base drive requirements, but not recommended for 24 V+ rails due to reduced breakdown margin.	Choose BC807-40,215 for gain-sensitive, low-voltage designs; retain MMBTA56_D87Z for robustness in higher-voltage industrial environments.

Compared with MMBTA56_D87Z, MMBTA55_D87Z serves complementary NPN roles and cannot substitute directly, while BC807-40,215 offers higher h_FE but sacrifices 35 V of collector-emitter breakdown margin - making MMBTA56_D87Z preferable for 24 V systems requiring reliability under transient stress.

Availability

MMBTA56_D87Z is available at Aetrix Electronics and suitable for industrial control interfaces, portable audio signal conditioning, and 24 V LED driver circuits requiring stable component supply and long-term manufacturability.

Supply support for MMBTA56_D87Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and discrete solutions for automotive, industrial, and consumer markets.

The MMBTA56_D87Z belongs to ON Semiconductor's general-purpose bipolar transistor product line, engineered for cost-effective, reliable amplification and switching in space-constrained surface-mount applications.

FAQ

What is the maximum collector current rating for MMBTA56_D87Z?

The MMBTA56_D87Z has a continuous collector current (I_C) rating of -500 mA, verified per Absolute Maximum Ratings in the official ON Semiconductor datasheet. This rating applies at T_A = 25 °C with proper PCB thermal relief; actual usable current decreases with rising ambient temperature due to 2.8 mW/°C derating. The device is typically operated up to -300 mA for general-purpose amplification to maintain reliability and thermal stability.

Is MMBTA56_D87Z pin-compatible with other SOT-23 PNP transistors like BC856 or BC807?

MMBTA56_D87Z uses standard SOT-23 pinout (Emitter-Base-Collector on pins 1-2-3), matching BC856 and BC807 series. However, pin compatibility does not guarantee functional equivalence: BC856 has V_(BR)CEO = -65 V and BC807-40 has V_(BR)CEO = -45 V - both lower than MMBTA56_D87Z's -80 V rating. Circuit validation is required before substitution, especially in 24 V systems.

What is the typical DC current gain (h_FE) of MMBTA56_D87Z at different operating points?

The MMBTA56_D87Z exhibits h_FE ≥100 at I_C = -10 mA and V_CE = -1.0 V, and maintains h_FE ≥100 even at I_C = -100 mA under the same V_CE. This flat gain profile across a 10× current range simplifies bias design in amplifier stages and ensures predictable switching thresholds in digital interface circuits using MMBTA56_D87Z.

Can MMBTA56_D87Z be used in linear regulator pass transistor applications?

MMBTA56_D87Z is not recommended as a linear regulator pass transistor due to its 350 mW power dissipation limit and 357 °C/W thermal resistance. At 100 mA load with 5 V dropout, it would dissipate 500 mW - exceeding its rated PD and risking thermal runaway. For such applications, higher-PD devices like ZTX951 or D44H11 are more appropriate; MMBTA56_D87Z suits only low-power bias or signal-level regulation.

Does MMBTA56_D87Z meet RoHS and REACH compliance standards?

Yes, MMBTA56_D87Z is manufactured by ON Semiconductor to comply with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The device carries the "Green" designation per ON Semiconductor's material declarations, confirming lead-free terminations and absence of restricted substances above threshold limits - verified through certified third-party testing and documented in the official MMBTA56_D87Z product change notification.

MMBTA56_D87Z Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 200mV @ 10mA, 100mA

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 100mA, 1V

Power - Max:: 350 mW

Frequency - Transition:: 50MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

MMBTA56_D87Z FAQ

1.How can I place an order for MMBTA56_D87Z through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBTA56_D87Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBTA56_D87Z reliable?

The price and inventory of MMBTA56_D87Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBTA56_D87Z is usually 5 days.

3.What payment methods are accepted for MMBTA56_D87Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBTA56_D87Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBTA56_D87Z?

MMBTA56_D87Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBTA56_D87Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBTA56_D87Z?

For technical support, including MMBTA56_D87Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBTA56_D87Z requirements.

6.How does Aetrix verify that MMBTA56_D87Z is sourced from the original manufacturer or authorized distributors?

All MMBTA56_D87Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBTA56_D87Z meets industry standards.

7.What is the process for return or replacement of MMBTA56_D87Z?

All MMBTA56_D87Z units undergo pre-shipment inspection (PSI). If there is an issue with MMBTA56_D87Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBTA56_D87Z part is unused and in its original packaging.

Return procedure for MMBTA56_D87Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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