Diodes Incorporated MMBTA64-7-F

Overview

MMBTA64-7-F from Diodes Incorporated is a 30V PNP Darlington transistor in SOT23 package, designed for low-power amplification and switching applications. It delivers high DC current gain (10,000–20,000 at IC = −100 mA), V_CE(sat) ≤ −1.5 V, and V_BE(sat) ≤ −2.0 V, enabling efficient drive of relays, LED arrays, and small solenoids in space-constrained industrial controls.

For engineers reviewing the MMBTA64-7-F datasheet, MMBTA64-7-F pinout, MMBTA64-7-F application, or MMBTA64-7-F equivalent, key selection criteria include its Darlington configuration for high β, SOT23 thermal performance (R_θJA = 417°C/W), JEDEC-qualified reliability, and complementary pairing with MMBTA14 for push-pull designs.

Technical Context

The MMBTA64-7-F implements a monolithic PNP Darlington pair using epitaxial planar die construction, delivering cascaded current gain without external biasing components. Its V_CEO = −30 V and V_EBO = −10 V support operation in negative-rail signal conditioning and high-side switch configurations.

It operates across −55°C to +150°C with JEDEC-compliant ESD robustness (HBM = 4 kV, MM = 400 V) and is rated for 300 mW power dissipation on standard FR-4 PCBs. The device is fully RoHS-compliant, halogen- and antimony-free ("Green"), and qualified per AEC-Q standards for automotive-grade variants.

Key Specifications

Pinout & Package

Package: SOT23 - surface-mount, 3-terminal plastic package with matte tin-plated leads, UL 94V-0 rated molding compound, and 0.008 g mass. Moisture sensitivity level 1 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington transistor applications.

Compared with MMBTA63-7-F, the MMBTA64-7-F offers double the minimum h_FE at high current, improving drive efficiency in low-base-current systems; versus PN2907A, it delivers superior high-frequency response and 60% smaller PCB area, critical for modern miniaturized controls.

Availability

MMBTA64-7-F is available at Aetrix Electronics and suitable for industrial automation, medical diagnostics equipment, and consumer appliance control modules requiring stable component supply and long-lifecycle sourcing.

Supply support for MMBTA64-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

The MMBTA64-7-F belongs to Diodes' general-purpose bipolar transistor product line, engineered for cost-sensitive, space-constrained applications demanding high gain, low saturation voltage, and robust JEDEC reliability-especially in industrial and automotive-adjacent systems.

FAQ

What is the maximum continuous collector current for MMBTA64-7-F?

The absolute maximum continuous collector current (I_C) is −500 mA at T_A = +25°C. Derating applies above 25°C ambient per the thermal curve in Figure 1; at 100°C ambient, usable I_C drops to approximately −220 mA to maintain safe junction temperature.

Is MMBTA64-7-F suitable for automotive applications?

The MMBTA64-7-F is not AEC-Q101 qualified. Diodes offers automotive-grade equivalents with Q-suffix (e.g., MMBTA64Q-7-F) that undergo PPAP, operate across −40°C to +150°C, and are manufactured in IATF 16949-certified facilities-required for functional safety-critical vehicle subsystems.

How does the Darlington configuration affect base-emitter voltage?

As a monolithic Darlington, MMBTA64-7-F exhibits V_BE(on) ≈ −1.2 V to −1.6 V (per Fig. 4), roughly double that of a single PNP transistor. This reflects the series-connected base-emitter junctions and must be accounted for in base resistor calculations to ensure sufficient drive.

Can MMBTA64-7-F replace a standard PNP transistor like 2N3906 in existing designs?

Direct replacement is not recommended without circuit review. Due to its higher V_BE(on), lower f_T roll-off, and Darlington leakage characteristics, base bias networks and timing margins may require adjustment-particularly in linear amplifiers or high-speed switching where gain-bandwidth trade-offs matter.