onsemi MMBTA93LT1G

Overview

MMBTA93LT1G from onsemi is a PNP silicon small-signal transistor rated for −200 V_CEO, −200 V_CBO, −5.0 V_EBO, −500 mA continuous collector current, and 225 mW power dissipation on FR-5 board at 25°C - used in high-voltage switching and linear amplification circuits for industrial power supplies and relay drivers.

For engineers reviewing the MMBTA93LT1G datasheet, pinout, applications, or equivalent options, key selection criteria include breakdown voltage margin, DC current gain at defined bias points, saturation voltage under load, thermal derating behavior, and SOT-23 package compatibility with automated assembly.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with verified h_FE ≥25 at I_C = −1.0 mA and V_CE = −10 V, and h_FE ≥25 at I_C = −30 mA for MMBTA93 variants. Its f_T is 50 MHz under specified test conditions (I_C = −10 mA, V_CE = −20 V, f = 100 MHz), confirming suitability for medium-frequency analog and switching functions.

Thermal performance is characterized by R_JA = 556 °C/W on FR-5 board and 417 °C/W on alumina substrate, with junction temperature range −55°C to +150°C. Cutoff currents are specified as I_CBO ≤ −0.25 μA at V_CB = −160 V and I_EBO ≤ −0.1 μA at V_EB = −3.0 V, supporting stable operation in high-impedance bias networks.

Key Specifications

Pinout & Package

MMBTA93LT1G uses the SOT-23 (TO-236AF) surface-mount package (Case 318, Style 6), measuring 2.90 × 1.30 × 1.00 mm with 1.90 mm lead pitch. It is Pb-free, halogen-free, and RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage transistor applications.

Compared with MMBTA93LT1G, MMBTA92LT1G offers greater voltage headroom but similar thermal and packaging constraints, while BC807-40LT1G trades voltage capability for significantly higher DC gain and lower V_CE(sat) - making it incompatible in high-voltage roles but superior in low-voltage precision switching.

Availability

MMBTA93LT1G is available at Aetrix Electronics and suitable for industrial relay drivers, high-voltage level shifters, linear regulator pass elements, and overvoltage protection circuits requiring stable component supply across extended production lifecycles.

Supply support for MMBTA93LT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MMBTA93LT1G belongs to onsemi's high-voltage discrete transistor product line, engineered specifically for robust switching and amplification in harsh industrial and automotive environments where voltage resilience and thermal stability are critical.

FAQ

What is the maximum collector-emitter voltage rating for MMBTA93LT1G?

The MMBTA93LT1G has a guaranteed minimum V_CEO rating of −200 Vdc under test condition I_C = −1.0 mA and I_B = 0. This rating reflects the device's ability to block voltage in the off-state without breakdown and is validated per JEDEC JESD22-A114. Exceeding this voltage risks irreversible damage to the MMBTA93LT1G junction structure.

Is MMBTA93LT1G suitable for automotive applications?

Yes, the MMBTA93LT1G is AEC-Q101 qualified and PPAP capable, meeting the stress testing and reliability requirements for automotive electronic modules. While the base part number lacks the "S" prefix (e.g., SMMBTA93LT1G), its qualification status applies to the MMBTA93LT1G variant per onsemi's documentation, enabling use in non-safety-critical automotive subsystems like body control and lighting drivers.

What is the thermal resistance of MMBTA93LT1G on a standard FR-5 PCB?

The MMBTA93LT1G exhibits a thermal resistance of R_JA = 556 °C/W when mounted on an FR-5 board (1.0 × 0.75 × 0.062 in.) at TA = 25°C. This value decreases linearly with increasing copper area and improves to 417 °C/W on 99.5% alumina substrates - critical for estimating junction temperature rise under sustained load in the MMBTA93LT1G.

Does MMBTA93LT1G have a documented current gain at high collector current?

Yes, the MMBTA93LT1G specifies h_FE ≥25 at I_C = −30 mA and V_CE = −10 Vdc, per the Electrical Characteristics table. This gain value is measured under pulsed conditions (300 µs pulse width, 2% duty cycle) and remains valid for repetitive switching applications where average power stays within PD limits - essential for validating base drive sizing in MMBTA93LT1G-based switch designs.

What is the pin configuration of MMBTA93LT1G in the SOT-23 package?

The MMBTA93LT1G uses Style 6 pinout for the SOT-23 package: Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector. This configuration is confirmed in the Mechanical Case Outline section of the official datasheet and matches the marking diagram showing "2E" device code. Correct orientation is critical to avoid reverse-bias damage during MMBTA93LT1G installation.