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NXP Semiconductors MMRF1050HR6
- Part No.:
- MMRF1050HR6
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SOT-979A
- Datasheet:
-
MMRF1050HR6.pdf
- Description:
- RF MOSFET LDMOS 50V NI1230
- Quantity:
- Payment:
- Shipping:
Inventory:9,415
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Product details
Overview
MMRF1050HR6 from NXP Semiconductors is a high-ruggedness, 50 V, 850–950 MHz RF power LDMOS transistor optimized for short-pulse radar applications. It delivers 1050 W peak output power with 21.3 dB power gain and 63.7% drain efficiency at 950 MHz under 100 µs pulse width and 20% duty cycle. Its dual-gate/dual-drain structure supports push–pull and quadrature configurations in UHF radar transmitters.
For engineers reviewing the MMRF1050HR6 datasheet, MMRF1050HR6 pinout, MMRF1050HR6 application, or MMRF1050HR6 equivalent, key selection criteria include VSWR ruggedness (>20:1), thermal impedance (0.034 °C/W), gate threshold voltage (1.3–2.3 V), ESD robustness (HBM Class 2, CDM Class C3), and NI-1230H-4S package compatibility with high-power RF PCB layouts.
Technical Context
This device is a laterally diffused MOSFET with internal broadband input/output matching, enabling direct integration into 50 Ω systems without external matching networks at 850–950 MHz. Its dual-channel architecture allows symmetrical push–pull operation with shared source (package backside) and independent gate/drain terminals per channel.
The MMRF1050HR6 operates in enhancement-mode with gate threshold voltage of 1.7 V typical and is characterized using series-equivalent large-signal impedance parameters (Zsource = 6.2 – j2.9 Ω, Zload = 4.0 – j1.1 Ω at 950 MHz). It sustains >20:1 load VSWR at full overdrive without degradation under 50 V bias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 850–950 MHz - Validated for UHF radar band operation with matched performance across entire range |
| Peak Output Power | 1050 W - Delivered under 100 µs pulse width, 20% duty cycle, 50 Vdc, 950 MHz |
| Power Gain | 21.3 dB typical - Enables compact driver stage design with minimal cascaded gain stages |
| Drain Efficiency | 63.7% typical - Reduces thermal load and heatsink requirements in pulsed radar amplifiers |
| VSWR Ruggedness | >20:1 at all phase angles - Supports unmatched antenna switching and fault-tolerant radar front-ends |
| Thermal Impedance | 0.034 °C/W - Enables high-duty-cycle operation with controlled junction temperature rise |
| ESD Rating | HBM Class 2 (2500 V), CDM Class C3 (1000 V) - Ensures gate reliability during handling and Class C pulsing |
Pinout & Package
Package: NI-1230H-4S - Air-cavity ceramic/metal flanged package with electrically isolated leads and solderable baseplate (source terminal). Backside metallization serves as common source connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Gate A | Control electrode for Channel A | Independent gate bias path; enables balanced push–pull drive with separate gate tuning |
| 2 - Gate B | Control electrode for Channel B | Electrically isolated from Gate A; supports differential or quadrature excitation |
| 3 - Drain A | High-current output for Channel A | Capable of 33 A pulsed drain current; requires low-inductance RF grounding to package base |
| 4 - Drain B | High-current output for Channel B | Matched to Drain A; enables symmetrical combiner design in parallel or push–pull topologies |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched broadband I/O | Eliminates discrete matching networks at 850–950 MHz, reducing board area and insertion loss |
| Dual-channel LDMOS architecture | Supports single-ended, push–pull, or quadrature configurations without external combining |
| High VSWR ruggedness (>20:1) | Enables operation into mismatched loads (e.g., rotating radar antennas) without protection circuitry |
| Integrated ESD protection | Extends gate survivability during negative-voltage pulsing in Class C amplifier operation |
| Qualified for 50 V operation | Validated for continuous use at 50 Vdc drain supply, supporting high-efficiency RF power conversion |
Applications
| Land-Based UHF Radar | Sea-Based Surveillance Radar |
|---|---|
|
Use Scenario: High-power pulsed transmitter in ground-based air defense radar operating at 950 MHz with rapid beam steering. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 1050 W peak pulses with 100 µs duration and 20% duty cycle. Use Value: High ruggedness (>20:1 VSWR) ensures uninterrupted operation during antenna pattern switching and environmental mismatches. |
Use Scenario: Shipboard maritime surveillance radar requiring salt-resistant, high-reliability RF power amplification at 850 MHz. IC Role / Device Role / Timing Role: Dual-channel LDMOS transistor configured in push–pull mode to enhance linearity and harmonic suppression. Use Value: Internal broadband matching reduces sensitivity to PCB parasitics in humid, vibration-prone marine environments. |
| Weather Radar Transmitter | Electronic Warfare Jammer |
|
Use Scenario: Doppler weather radar transmitter needing stable peak power across temperature extremes (–40°C to +85°C). IC Role / Device Role / Timing Role: Primary RF power device biased at 100 mA quiescent current, delivering 1050 W peak with <±0.3 dB gain variation over temperature. Use Value: Low thermal impedance (0.034 °C/W) maintains junction temperature below 225°C during extended pulse trains. |
Use Scenario: Broadband jammer front-end requiring fast turn-on/turn-off and high peak-to-average power ratio. IC Role / Device Role / Timing Role: High-ruggedness LDMOS switch-amplifier operating in Class C with gate voltage pulsing. Use Value: Integrated ESD protection and extended negative gate voltage tolerance enable reliable gate pulsing without external clamp circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMRF1050HSR6 | Same die, but in NI-1230H-4S package with silver-plated flange (vs. standard nickel); lower thermal resistance (0.031 °C/W vs. 0.034 °C/W) | Better suited for thermally constrained enclosures or higher average power operation | Select MMRF1050HSR6 when junction temperature margin is critical and silver plating is acceptable for corrosion environment |
| CGHV10010F | Gallium nitride HEMT; 1000 W peak at 950 MHz, 65% efficiency, 0.022 °C/W; no integrated ESD protection | Higher frequency capability (DC–1.2 GHz), but requires external gate protection and more complex bias sequencing | Choose CGHV10010F only if system-level redesign accommodates GaN-specific gate drive and thermal management |
Compared with MMRF1050HR6, MMRF1050HSR6 offers marginal thermal improvement in identical form factor, while CGHV10010F provides broader bandwidth and higher efficiency at the cost of added system complexity and loss of built-in ruggedness features.
Availability
MMRF1050HR6 is available at Aetrix Electronics and suitable for land-based radar, sea-based surveillance systems, and weather radar transmitters requiring stable component supply, long-lifecycle support, and traceable sourcing for defense and industrial programs.
Supply support for MMRF1050HR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies.
The MMRF1050HR6 belongs to NXP's high-power LDMOS transistor family designed specifically for ruggedized UHF radar transmitters demanding high peak power, exceptional load mismatch tolerance, and field-proven reliability.
FAQ
What is the maximum drain-source voltage rating for the MMRF1050HR6?
The MMRF1050HR6 has a maximum drain-source voltage (VDSS) rating of +105 Vdc and –0.5 Vdc, validated per NXP's absolute maximum ratings table. This 50 V operational qualification ensures safe margin for transient spikes in pulsed radar applications. The MMRF1050HR6 must not be operated beyond these limits to maintain reliability and avoid permanent degradation.
Does the MMRF1050HR6 require external input/output matching networks?
No - the MMRF1050HR6 is internally input and output matched for broadband operation from 850 to 950 MHz, as confirmed by NXP's production fixture measurements showing Zsource = 6.2 – j2.9 Ω and Zload = 4.0 – j1.1 Ω at 950 MHz. While external tuning may optimize for narrowband targets, the MMRF1050HR6 functions effectively in 50 Ω systems without mandatory matching components.
What is the thermal impedance of the MMRF1050HR6 and how is it measured?
The MMRF1050HR6 has a thermal impedance (ZθJC) of 0.034 °C/W, measured under pulse conditions: case temperature 87°C, 1050 W peak, 100 µs pulse width, 20% duty cycle, 50 Vdc, IDQ(A+B) = 100 mA, and 950 MHz. This value reflects junction-to-case conduction through the NI-1230H-4S package baseplate and is critical for heatsink sizing in radar amplifier designs using the MMRF1050HR6.
Can the MMRF1050HR6 be used in push–pull configuration?
Yes - the MMRF1050HR6 is explicitly qualified for push–pull operation, as stated in its features and verified in functional testing. Its dual-gate/dual-drain architecture with independent terminals (Gate A/Gate B, Drain A/Drain B) and common source (package backside) enables symmetrical drive and current combining. NXP's production test fixture and Table 4 notes confirm measurement methodology for push–pull configuration of the MMRF1050HR6.
What ESD protection level does the MMRF1050HR6 provide?
The MMRF1050HR6 provides Human Body Model (HBM) Class 2 protection (2500 V) and Charge Device Model (CDM) Class C3 protection (1000 V), per JS-001-2017 and JS-002-2014 standards. This integrated ESD robustness supports reliable handling and gate pulsing in Class C amplifier operation, directly contributing to field reliability of systems deploying the MMRF1050HR6.
MMRF1050HR6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-979A
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- LDMOS (Dual)
- Configuration:
- 2 N-Channel
- Frequency:
- 850MHz ~ 950MHz
- Gain:
- 21.3dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- 1µA
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 1050W
- Voltage - Rated:
- 105 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-1230-4H
MMRF1050HR6 FAQ
1.How can I place an order for MMRF1050HR6 through Aetrix?
Please submit a Request for Quotation (RFQ) for MMRF1050HR6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMRF1050HR6 reliable?
The price and inventory of MMRF1050HR6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMRF1050HR6 is usually 5 days.
3.What payment methods are accepted for MMRF1050HR6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMRF1050HR6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMRF1050HR6?
MMRF1050HR6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMRF1050HR6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMRF1050HR6?
For technical support, including MMRF1050HR6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMRF1050HR6 requirements.
6.How does Aetrix verify that MMRF1050HR6 is sourced from the original manufacturer or authorized distributors?
All MMRF1050HR6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMRF1050HR6 meets industry standards.
7.What is the process for return or replacement of MMRF1050HR6?
All MMRF1050HR6 units undergo pre-shipment inspection (PSI). If there is an issue with MMRF1050HR6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMRF1050HR6 part is unused and in its original packaging.
Return procedure for MMRF1050HR6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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