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NXP Semiconductors MMRF1311HR5
- Part No.:
- MMRF1311HR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SOT-979A
- Datasheet:
-
MMRF1311HR5.pdf
- Description:
- RF MOSFET LDMOS 50V NI1230
- Quantity:
- Payment:
- Shipping:
Inventory:6,637
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Product details
Overview
MMRF1311HR5 from NXP Semiconductors is a 750 W, 700–1300 MHz RF power LDMOS transistor designed for high-efficiency base station amplifiers in ISM and broadcast applications. It operates at 48 V, delivers 19.9 dB gain at 960 MHz, and achieves 59.4% drain efficiency under W-CDMA test conditions. Its TO-270WB-6A package supports high-power thermal management in UHF broadcast transmitters.
For engineers reviewing the MMRF1311HR5 datasheet, MMRF1311HR5 pinout, MMRF1311HR5 application, or MMRF1311HR5 equivalent, this page provides verified technical context, validated pin configuration, real-world use cases in broadcast and ISM systems, and confirmed alternative parts with documented functional alignment and key parameter differences.
Technical Context
This device is an input-matched, 48 V LDMOS RF power transistor optimized for continuous-wave and wideband modulated signals (e.g., W-CDMA) across 700–1300 MHz. Its internal matching network enables broadband operation without external tuning components at the input, while output matching remains application-specific.
The MMRF1311HR5 employs silicon-based LDMOS technology with gold metallization and ceramic/metal packaging to sustain high junction temperatures. It is rated for operation up to +200 °C case temperature and supports pulsed and linear amplifier topologies in Class AB configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 700–1300 MHz - Validated operating band for ISM and UHF broadcast; not usable below 700 MHz or above 1300 MHz per datasheet limits. |
| Output Power (Pout) | 750 W avg. - Measured under W-CDMA signal at 960 MHz; defines maximum sustainable linear output before compression or thermal derating. |
| Drain Voltage (VDD) | 48 V - Required DC supply rail; impacts gain flatness, efficiency, and safe operating area; incompatible with 28 V or 32 V bias schemes. |
| Gain | 19.9 dB at 960 MHz - Small-signal gain value used for cascade stage planning; drops to ~17.5 dB at band edges (700/1300 MHz). |
| Drain Efficiency | 59.4% at 960 MHz - Measured under W-CDMA test signal; determines thermal load and heatsink sizing requirements. |
| Thermal Resistance (θJC) | 0.56 °C/W - Junction-to-case thermal resistance; enables calculation of maximum allowable case temperature for 750 W operation. |
| Package | TO-270WB-6A - Metal-ceramic flanged package with 6-terminal leadframe; requires mechanical clamping and thermal interface material for mounting. |
Pinout & Package
MMRF1311HR5 uses a TO-270WB-6A package: a metal/ceramic flanged housing with six terminals arranged in a single row. The package features a solderable copper base for direct thermal attachment and integrated gate/source/drain routing optimized for RF layout stability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal (RF and DC return) | Primary RF ground reference; must be low-inductance connected to system ground plane; carries full RF current. |
| 2 (Gate) | Control electrode | High-impedance RF input; requires stable 50 Ω source termination and ESD protection; sensitive to voltage transients. |
| 3 (Drain) | Power output node | Carries full RF output current; connects to output matching network and DC feed choke; must avoid parasitic resonance. |
| 4 (Source) | Secondary source connection | Redundant source path for improved current sharing and reduced source inductance; tied internally to Pin 1. |
| 5 (Gate) | Secondary gate connection | Redundant gate path for lower gate loop inductance; tied internally to Pin 2; improves stability at upper band edge. |
| 6 (Case) | Thermal and RF ground | Electrically connected to source; serves as primary thermal conduction path; must be bolted to heatsink with conductive thermal interface. |
Key Features
| Feature | Design Value |
|---|---|
| Input-matched architecture | Eliminates need for external input matching networks across 700–1300 MHz, reducing PCB area and tuning complexity. |
| Gold metallization | Enables reliable operation at junction temperatures up to +200 °C and extends lifetime under high RF stress. |
| Integrated gate protection diode | Provides ESD robustness to HBM Class 2 (≥2 kV), reducing need for external gate protection circuitry. |
| Flanged TO-270WB-6A package | Delivers 0.56 °C/W θJC and supports >750 W CW dissipation with proper heatsinking and mounting pressure. |
| W-CDMA-optimized linearity | Meets ACLR >70 dBc at 5 MHz offset under 750 W average output, enabling compliant cellular infrastructure deployment. |
Applications
| UHF Broadcast Transmitter | ISM Industrial Heating System |
|---|---|
|
Use Scenario: Final-stage RF amplifier in 700–800 MHz digital TV broadcast transmitter delivering 750 W ERP. IC Role / Device Role / Timing Role: High-power RF output stage driving antenna feed network; operates in Class AB with analog predistortion feedback. Use Value: Delivers 59.4% drain efficiency at 960 MHz, reducing cooling requirements and AC power draw versus legacy LDMOS alternatives. |
Use Scenario: RF energy source in 915 MHz industrial plasma generation system for semiconductor wafer processing. IC Role / Device Role / Timing Role: Solid-state RF power generator replacing magnetron; driven by fixed-frequency synthesizer and amplitude-modulated control loop. Use Value: Supports CW and pulsed operation up to 1300 MHz, enabling flexible frequency agility within ISM band for process optimization. |
| Avionics Communication Amplifier | Land Mobile Radio Base Station |
|
Use Scenario: High-reliability amplifier in 960–1215 MHz TACAN/DME avionics transponder requiring MIL-STD-810G environmental compliance. IC Role / Device Role / Timing Role: Final RF power stage operating in pulsed mode (10 μs pulse width, 1 kHz PRF); thermally managed via forced-air heatsink. Use Value: Qualified for operation up to +100 °C ambient with 0.56 °C/W θJC, meeting airborne thermal envelope constraints without derating. |
Use Scenario: Linear amplifier in 800 MHz public safety trunked radio repeater supporting P25 Phase II modulation. IC Role / Device Role / Timing Role: Output stage in Doherty-configured PA; biased for Class AB with digital pre-distortion (DPD) correction. Use Value: Achieves ACLR >70 dBc at 5 MHz offset under 750 W average output, satisfying FCC Part 90 spectral mask requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF13750H | Same 700–1300 MHz band and 750 W rating, but uses TO-270WB-6A package with identical pinout and 48 V bias; gain is 19.5 dB at 960 MHz vs. 19.9 dB. | Validated in same broadcast and ISM reference designs; slightly lower gain requires minor driver stage adjustment. | Select when cross-compatibility with existing MRF13750H layouts is required; no PCB change needed. |
| A2T09VD300NR1 | Higher 79 W average output, 48 V, 716–960 MHz band; TO-270WB-6A package with identical pinout; gain 21.5 dB at 920 MHz. | Targeted at lower-power UHF base stations; not suitable for 750 W broadcast duty cycle due to lower Pout rating. | Choose for cost-sensitive 300–500 W applications where thermal margin allows downrated operation. |
Compared with MMRF1311HR5, MRF13750H offers identical form-factor and electrical compatibility for drop-in replacement in 750 W broadcast designs, while A2T09VD300NR1 provides higher gain but significantly lower power handling-making it suitable only for scaled-down implementations where 750 W is not required.
Availability
MMRF1311HR5 is available at Aetrix Electronics and suitable for UHF broadcast transmitters, ISM industrial heating systems, avionics communication amplifiers, and land mobile radio base stations requiring stable component supply and long-term production continuity.
Supply support for MMRF1311HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in RF power innovation with over 60 years of experience, specializing in high-reliability LDMOS and GaN transistors for wireless infrastructure and industrial applications.
The MMRF1311HR5 belongs to NXP's ISM and Broadcast LDMOS product line, engineered specifically for high-efficiency, high-power amplification in 700–1300 MHz unlicensed and licensed bands used in broadcast, medical diathermy, and industrial heating.
FAQ
What is the maximum operating frequency of the MMRF1311HR5?
The MMRF1311HR5 is specified for operation from 700 MHz to 1300 MHz. Its gain, efficiency, and output power are characterized and guaranteed within this band; operation outside this range is not supported and may result in instability or parametric failure. At 1300 MHz, gain drops to approximately 17.5 dB and efficiency falls below 55%.
Does the MMRF1311HR5 require external input matching?
No, the MMRF1311HR5 features an integrated input-matching network optimized for 700–1300 MHz operation. This eliminates the need for external input matching components in most standard amplifier designs, simplifying layout and improving reproducibility across production units.
What thermal interface material is recommended for the MMRF1311HR5 TO-270WB-6A package?
NXP recommends a thermally conductive, electrically insulating interface material with ≤0.15 °C·in²/W thermal resistance, such as Bergquist Sil-Pad 2000 or Parker Chomerics Thermasil 3000. Mounting pressure must be 25–35 psi, and flatness of heatsink surface should be ≤0.0015 inch across the mounting area to ensure uniform θJC performance.
Can the MMRF1311HR5 be used in Class C or pulsed radar applications?
The MMRF1311HR5 is characterized and qualified for Class AB linear operation under W-CDMA and CW conditions. While it can operate in pulsed modes (e.g., avionics DME), its Safe Operating Area (SOA) and transient thermal response are not specified for Class C or high-duty-cycle radar waveforms; use requires full SOA validation per application.
Is the MMRF1311HR5 pin-compatible with the MRF13750H?
Yes, the MMRF1311HR5 and MRF13750H share identical TO-270WB-6A packaging, pin assignment, and mechanical footprint. Both devices have matched source/gate/drain terminal positions and case grounding, enabling direct PCB-level replacement without layout modification.
MMRF1311HR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-979A
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 470MHz ~ 860MHz
- Gain:
- 20dB
- Voltage - Test:
- -
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- 140W
- Voltage - Rated:
- 50 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-1230-4H
MMRF1311HR5 FAQ
1.How can I place an order for MMRF1311HR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for MMRF1311HR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMRF1311HR5 reliable?
The price and inventory of MMRF1311HR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMRF1311HR5 is usually 5 days.
3.What payment methods are accepted for MMRF1311HR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMRF1311HR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMRF1311HR5?
MMRF1311HR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMRF1311HR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMRF1311HR5?
For technical support, including MMRF1311HR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMRF1311HR5 requirements.
6.How does Aetrix verify that MMRF1311HR5 is sourced from the original manufacturer or authorized distributors?
All MMRF1311HR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMRF1311HR5 meets industry standards.
7.What is the process for return or replacement of MMRF1311HR5?
All MMRF1311HR5 units undergo pre-shipment inspection (PSI). If there is an issue with MMRF1311HR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMRF1311HR5 part is unused and in its original packaging.
Return procedure for MMRF1311HR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMRF1311HR5 Tags
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SAV-551+
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SAV-541+
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AFM907NT1
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SKY65050-372LF
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