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NXP Semiconductors MMRF1312HSR5
- Part No.:
- MMRF1312HSR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-1230-4S
- Datasheet:
-
MMRF1312HSR5.pdf
- Description:
- RF MOSFET LDMOS 50V NI1230
- Quantity:
- Payment:
- Shipping:
Inventory:8,771
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Product details
Overview
MMRF1312HSR5 from NXP Semiconductors (formerly Freescale) is a high-ruggedness, 52 V, L-band RF power LDMOS transistor designed for pulse radar amplifiers. It delivers 1560 W peak output at 960 MHz, 17.3 dB power gain, and 55.7% drain efficiency under 128 µs / 10% duty cycle conditions - optimized for military IFF and commercial DME/TACAN transmitters.
For engineers reviewing the MMRF1312HSR5 datasheet, MMRF1312HSR5 pinout, MMRF1312HSR5 application, or MMRF1312HSR5 equivalent, key selection criteria include its >20:1 VSWR ruggedness at 1030 MHz, NI-1230S-4S earless flange package, push-pull configuration support, and validated performance in narrowband 1030 MHz production test fixtures with 50 Ω system impedance.
Technical Context
This dual-gate, dual-drain N-channel enhancement-mode lateral MOSFET operates in Class C or pulsed AB mode with internally matched broadband input/output networks. Its gate threshold voltage (1.3–2.3 V) and quiescent gate voltage (1.5–2.5 V) enable precise bias control for high-duty-cycle radar pulses.
The device features integrated ESD protection (HBM Class 2, MM Class B, CDM Class IV), reverse transfer capacitance of 2.5 pF, and thermal impedance of 0.017 °C/W (junction-to-case), supporting operation up to 225 °C junction temperature in air-cavity mounting configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 900–1215 MHz - supports full L-band radar band including IFF (1030/1090 MHz) and TACAN (1080–1150 MHz) |
| Peak Output Power | 1560 W @ 960 MHz - enables single-device transmitter stages in ground-based secondary surveillance radar |
| Power Gain | 17.3 dB @ 960 MHz - reduces driver stage complexity and improves system-level gain flatness |
| Drain Efficiency | 55.7% @ 960 MHz - lowers thermal load and DC power supply requirements in pulsed radar systems |
| VSWR Ruggedness | >20:1 @ 1030 MHz - ensures reliable operation under antenna mismatch without degradation during long-pulse operation |
| Supply Voltage | 52 Vdc max - compatible with standard high-voltage radar power supplies and matches legacy MMRF1312H family designs |
| Junction Temp Limit | 225 °C - allows high-power density packaging in conduction-cooled air-cavity modules |
Pinout & Package
MMRF1312HSR5 uses the NI-1230S-4S package: an earless ceramic/metal flange-mount air-cavity package with solderable baseplate (source terminal), rated for high-power RF operation and optimized for thermal dissipation in pulsed applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain A (Pin 1) | High-current RF output node A | Carries half the total RF output current in push-pull or quadrature configurations; requires low-inductance RF grounding |
| Gate A (Pin 2) | Control input for transistor A | Bias and RF drive path for first LDMOS cell; matched to 50 Ω in reference circuit via internal network |
| Drain B (Pin 3) | High-current RF output node B | Second output path enabling balanced amplifier topologies; symmetrical layout minimizes phase imbalance |
| Gate B (Pin 4) | Control input for transistor B | Independent gate drive enables differential or phased excitation; critical for VSWR tolerance in mismatched loads |
Key Features
| Feature | Design Value |
|---|---|
| Internally input/output matched | Reduces external matching network complexity - enables direct integration into 50 Ω systems without discrete tuning components |
| Push-pull / quadrature configurable | Supports scalable RF power combining without redesigning gate drive or output combiner networks |
| 52 V maximum drain supply | Aligns with industry-standard radar HV rails and simplifies power supply reuse across MMRF1312 family variants |
| ESD-protected gate structure | Enables robust gate voltage pulsing in Class C operation and withstands handling per JESD22-A114 (2500 V HBM) |
| Characterized large-signal Z-parameters | Provides verified source/load impedances (e.g., Zsource = 2.40 – j3.73 Ω @ 1030 MHz) for accurate PA simulation and layout |
Applications
| IFF Interrogator Transmitter | DME Ground Station |
|---|---|
Use Scenario: High-reliability airborne identification interrogation at 1030 MHz with 128 µs pulse width and 10% duty cycle. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 1560 W peak output in pulsed mode. Use Value: >20:1 VSWR tolerance prevents failure during antenna switching transients and maintains MTTF >10⁷ hours at 150 °C case temperature. | Use Scenario: Distance measuring equipment ground station transmitting 100 W average / 1000 W peak pulses at 1025–1150 MHz. IC Role / Device Role / Timing Role: High-efficiency L-band pulse amplifier operating at 55.7% drain efficiency. Use Value: 17.3 dB gain reduces driver stage count and improves overall system noise figure in multi-channel DME arrays. |
| TACAN Beacon Transmitter | ATC Secondary Surveillance Radar |
Use Scenario: Tactical air navigation beacon operating at 1080–1150 MHz with long-pulse capability and high duty cycle tolerance. IC Role / Device Role / Timing Role: Dual-drain LDMOS configured in quadrature for improved spectral purity and sideband suppression. Use Value: Internal broadband matching eliminates need for external harmonic filters in TACAN's 960–1215 MHz band. | Use Scenario: Civilian air traffic control ground radar interrogating Mode S transponders at 1030 MHz with strict pulse fidelity requirements. IC Role / Device Role / Timing Role: Single-ended or push-pull RF power stage delivering stable 1500 W peak output with <0.5 dB gain variation across 900–1215 MHz. Use Value: Validated narrowband test fixture (Figure 5) provides repeatable layout reference for certified ATC hardware compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMRF1312HR5 | Eared flange (NI-1230H-4S); identical electrical specs and thermal rating | Requires mechanical retention clips vs. soldered earless mounting | Select when legacy board design uses clip-on heatsink interface |
| MMRF1312GSR5 | Gull-wing leaded package (NI-1230GS-4L); lower thermal impedance (0.015 °C/W) but reduced peak power (1200 W @ 1215 MHz) | Suitable for compact conduction-cooled modules where airflow is limited | Select when PCB space constraints preclude flange-mount and lower peak power is acceptable |
Compared with MMRF1312HR5, MMRF1312HSR5 offers simplified assembly via earless mounting; compared with MMRF1312GSR5, it delivers higher peak power and ruggedness at the cost of larger footprint and air-cavity thermal management requirements.
Availability
MMRF1312HSR5 is available at Aetrix Electronics and suitable for L-band radar transmitters, military IFF systems, and commercial DME/TACAN ground stations requiring stable component supply and long-term obsolescence management.
Supply support for MMRF1312HSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power from its Freescale acquisition.
The MMRF1312HSR5 belongs to the Airfast® RF Power LDMOS family, engineered specifically for high-reliability, high-ruggedness pulsed radar amplifiers operating in the 900–1215 MHz band under demanding military and aviation standards.
FAQ
What is the maximum drain supply voltage for MMRF1312HSR5?
The MMRF1312HSR5 is rated for a maximum drain-source voltage (VDSS) of +112 Vdc, with recommended continuous operation up to 52 Vdc. This 52 V rating aligns with standard radar power supplies and ensures safe margin for transient overvoltage events during pulse operation. The device's absolute maximum VDSS is documented in Table 1 of the Freescale/NXP datasheet Rev. 0 (March 2016).
Does MMRF1312HSR5 require external input/output matching networks?
No - MMRF1312HSR5 is internally input and output matched for broadband operation from 900–1215 MHz, enabling direct integration into 50 Ω systems. The datasheet confirms this in the Features section and provides measured series-equivalent impedances (e.g., Zsource = 2.40 – j3.73 Ω at 1030 MHz), allowing designers to validate matching without adding discrete components in most reference circuits.
What package type does MMRF1312HSR5 use, and how is the source terminal connected?
MMRF1312HSR5 uses the NI-1230S-4S package: an earless ceramic/metal flange-mount air-cavity package. The backside metal baseplate serves as the common source terminal for both LDMOS cells, requiring direct thermal and electrical connection to the heatsink. Pin 1 and Pin 3 are Drain A and Drain B; Pin 2 and Pin 4 are Gate A and Gate B - all leads are solderable surface-mount terminals.
How does MMRF1312HSR5 handle load mismatches in radar applications?
MMRF1312HSR5 is characterized for >20:1 VSWR at all phase angles under 1030 MHz pulse conditions (128 µs, 10% duty cycle, 52 V, 3 dB overdrive), with zero device degradation observed. This ruggedness stems from its high-breakdown voltage (112 V), integrated ESD protection, and lateral LDMOS structure - making it suitable for radar transmitters where antenna VSWR varies dynamically during scanning or weather-induced impedance shifts.
What is the thermal impedance of MMRF1312HSR5, and how does it impact heatsink design?
The MMRF1312HSR5 has a junction-to-case thermal impedance (ZθJC) of 0.017 °C/W under pulsed conditions (1000 W peak, 128 µs, 10% duty cycle, 50 V, 1030 MHz). This low value demands high-performance conduction cooling - typically achieved using copper-molybdenum heatsinks with indium foil or sintered silver die attach. Designers must ensure case temperature remains ≤150 °C to maintain 225 °C junction limit and MTTF >10⁷ hours.
MMRF1312HSR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-1230-4S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 1.034GHz
- Gain:
- 19.6dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 1000W
- Voltage - Rated:
- 112 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-1230-4S
MMRF1312HSR5 FAQ
1.How can I place an order for MMRF1312HSR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for MMRF1312HSR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMRF1312HSR5 reliable?
The price and inventory of MMRF1312HSR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMRF1312HSR5 is usually 5 days.
3.What payment methods are accepted for MMRF1312HSR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMRF1312HSR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMRF1312HSR5?
MMRF1312HSR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMRF1312HSR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMRF1312HSR5?
For technical support, including MMRF1312HSR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMRF1312HSR5 requirements.
6.How does Aetrix verify that MMRF1312HSR5 is sourced from the original manufacturer or authorized distributors?
All MMRF1312HSR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMRF1312HSR5 meets industry standards.
7.What is the process for return or replacement of MMRF1312HSR5?
All MMRF1312HSR5 units undergo pre-shipment inspection (PSI). If there is an issue with MMRF1312HSR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMRF1312HSR5 part is unused and in its original packaging.
Return procedure for MMRF1312HSR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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