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NXP Semiconductors MMRF1314H-1200
- Part No.:
- MMRF1314H-1200
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SOT-979A
- Datasheet:
-
MMRF1314H-1200.pdf
- Description:
- RF MOSFET LDMOS 52V NI1230
- Quantity:
- Payment:
- Shipping:
Inventory:3,118
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Product details
Overview
MMRF1314H from NXP Semiconductors is a high-ruggedness, 52 V, LDMOS RF power transistor designed for pulsed L-band radar amplifiers operating at 1200–1400 MHz. It delivers 1130 W peak output power with 15.5 dB power gain and 47.5% drain efficiency at 1200 MHz under 128 μs / 10% duty cycle pulse conditions, and is qualified for military and commercial radar transmitters requiring >20:1 VSWR tolerance.
For engineers reviewing the MMRF1314H datasheet, MMRF1314H pinout, MMRF1314H application, or MMRF1314H equivalent, this page provides verified electrical specs, ruggedness validation, thermal impedance (0.018 °C/W), gate threshold voltage (1.3–2.3 V), and ESD protection class (HBM 2500 V) - all confirmed for the NI-1230H-4S package and 52 V operation.
Technical Context
The MMRF1314H is a dual-gate, dual-drain lateral MOSFET configured as two parallel N-channel enhancement-mode devices sharing a common source (package backside). Its internal broadband matching enables operation across 1200–1400 MHz without external tuning networks in push-pull or quadrature configurations.
It features integrated ESD protection, supports Class C and pulsed biasing via gate voltage pulsing, and is characterized using series-equivalent large-signal impedances (e.g., Zsource = 7.35 – j4.62 Ω, Zload = 1.3 – j0.072 Ω at 1400 MHz), enabling accurate PA design in narrowband and reference circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1200–1400 MHz - Validated for pulsed radar operation across full L-band segment. |
| Peak Output Power | 1130 W at 1200 MHz - Enables high-energy pulse transmission in ground-based and airborne radar systems. |
| Power Gain | 15.5 dB (1200 MHz) - Delivers stable small-signal-to-large-signal amplification without cascaded stages. |
| Drain Efficiency | 47.5% at 1200 MHz - Reduces thermal load and DC power demand in high-duty-cycle radar transmitters. |
| VSWR Tolerance | >20:1 at all phase angles - Ensures survivability during antenna mismatch events in field-deployed radar. |
| Thermal Impedance | 0.018 °C/W (Junction-to-Case) - Supports high-power dissipation with minimal temperature rise under 1000 W peak pulses. |
| Gate Threshold Voltage | 1.3–2.3 V - Enables precise low-voltage gate control and compatibility with standard CMOS/TTL driver logic. |
| ESD Rating | HBM Class 2 (2500 V) - Protects against handling-induced damage during assembly and test. |
Pinout & Package
MMRF1314H uses the NI-1230H-4S air-cavity ceramic package with eared flange and solderable baseplate (source terminal). The backside of the package is electrically connected to the source, requiring thermal and electrical mounting to ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate A | Control electrode for first LDMOS cell | Accepts gate bias and RF drive; internally matched for broadband input impedance. |
| 2: Gate B | Control electrode for second LDMOS cell | Enables balanced push-pull or quadrature operation; matched to Gate A for symmetry. |
| 3: Drain A | High-current RF output node (Cell A) | Delivers half the total RF output power; requires low-inductance RF output path. |
| 4: Drain B | High-current RF output node (Cell B) | Paired with Drain A for combined 1130 W peak output; shares common source return path. |
Key Features
| Feature | Design Value |
|---|---|
| Internally input/output matched | Eliminates need for discrete matching networks in 1200–1400 MHz reference designs, reducing board area and tuning complexity. |
| Single-ended, push-pull or quadrature configurable | Supports flexible amplifier topologies without redesign - validated in both straight-lead and push-pull functional tests. |
| 52 V maximum drain supply rating | Enables higher output power density vs. 28 V alternatives while maintaining reliability within JEDEC limits. |
| Integrated ESD protection + extended VGS range | Allows safe gate voltage pulsing down to –6 V, improving Class C linearity and transient control robustness. |
| Characterized large-signal impedance parameters | Provides Zsource and Zload data (e.g., 7.35 – j4.62 Ω at 1400 MHz) for accurate harmonic-balance simulation and PA layout. |
Applications
| Ground-Based Radar Transmitter | Airborne Fire-Control Radar |
|---|---|
|
Use Scenario: High-duty-cycle pulsed transmission in S-band surveillance radars with dynamic antenna VSWR shifts. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 1130 W peak pulses at 1200 MHz with 128 μs duration and 10% duty cycle. Use Value: >20:1 VSWR ruggedness prevents failure during rapid antenna scanning or weather-induced mismatch events. |
Use Scenario: Compact, high-efficiency transmitter module in fighter jet fire-control radar requiring weight and thermal budget optimization. IC Role / Device Role / Timing Role: Dual-cell LDMOS PA operating in push-pull configuration to achieve 1170 W peak output at 1300 MHz with 47% efficiency. Use Value: 0.018 °C/W thermal impedance enables conduction-cooled mounting, eliminating forced-air cooling in space-constrained avionics bays. |
| Maritime Navigation Radar | Electronic Warfare Jammer Front-End |
|
Use Scenario: Marine radar operating in humid, salt-laden environments where long-term reliability under thermal cycling is critical. IC Role / Device Role / Timing Role: High-ruggedness final amplifier stage driving slotted waveguide array with variable pulse repetition frequency. Use Value: Qualified for –40°C to +150°C case temperature range and 225°C junction limit ensures uninterrupted operation in extreme coastal conditions. |
Use Scenario: Broadband jamming system requiring rapid frequency agility and instantaneous power delivery across L-band. IC Role / Device Role / Timing Role: Pulsed RF power device biased in Class C for high peak-to-average ratio signal generation at 1400 MHz. Use Value: Extended negative gate-source voltage range (–6 V) enables precise gate pulsing for fast on/off switching and spectral purity control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMRF1314HS | Same die, NI-1230S-4S earless package; identical electrical specs but different mechanical mounting interface. | Preferred for automated pick-and-place assembly due to absence of mounting ears; same thermal and RF performance. | Select MMRF1314HS when PCB layout requires symmetric footprint and no flange anchoring points. |
| MMRF1314GS | Gull-wing leaded version (NI-1230GS-4L); lower power handling (1000 W peak), reduced ruggedness margin, and higher thermal impedance. | Suitable for lab prototypes or low-volume systems where solder reflow attachment is preferred over bolt-down mounting. | Choose MMRF1314GS only for non-mission-critical evaluation; MMRF1314H remains mandatory for production radar transmitters. |
Compared with MMRF1314HS and MMRF1314GS, the MMRF1314H offers superior ruggedness (>20:1 VSWR), highest peak power (1130 W), lowest thermal impedance (0.018 °C/W), and bolt-down mechanical stability - making it the sole qualified option for deployed military L-band radar transmitters.
Availability
MMRF1314H is available at Aetrix Electronics and suitable for ground-based radar transmitters, airborne fire-control systems, and maritime navigation radars requiring stable component supply, long-life reliability, and guaranteed ruggedness validation.
Supply support for MMRF1314H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions, automotive radar, and high-reliability RF power devices for defense and industrial applications.
The MMRF1314H belongs to NXP's AIRFAST® RF Power LDMOS family, engineered specifically for high-efficiency, high-ruggedness pulsed radar amplifiers operating in the 1200–1400 MHz band.
FAQ
What is the maximum drain supply voltage for MMRF1314H?
The MMRF1314H is rated for continuous operation up to +105 VDS, but its qualified maximum drain supply voltage is +52 VDD. This 52 V rating is validated across all electrical, thermal, and ruggedness specifications in the datasheet - including 1130 W peak output and >20:1 VSWR testing. Operating above 52 V voids qualification and may compromise reliability.
Does MMRF1314H require external input/output matching networks?
No - the MMRF1314H is internally input and output matched for broadband operation from 1200 to 1400 MHz. NXP's reference circuit (Document D80014) demonstrates full functionality without discrete matching components, though external tuning may be applied for narrowband optimization. The internal matching reduces design risk and layout sensitivity in radar PA stages.
What is the thermal impedance of MMRF1314H, and how is it measured?
The MMRF1314H has a junction-to-case thermal impedance (ZθJC) of 0.018 °C/W, measured under production test conditions: case temperature = 60°C, 1000 W peak pulse, 128 μs width, 10% duty cycle, 50 VDD, IDQ(A+B) = 100 mA, and 1400 MHz. This value assumes direct metal-to-metal mounting with proper thermal interface material and is critical for heatsink sizing in radar transmitter modules.
How is the source terminal connected on MMRF1314H?
The source terminal of the MMRF1314H is the entire backside metal surface of the NI-1230H-4S package. It must be soldered or clamped to a grounded, thermally conductive heatsink or PCB ground plane to serve both electrical return and thermal dissipation functions. Pin 1 (Gate A), Pin 2 (Gate B), Pin 3 (Drain A), and Pin 4 (Drain B) are the only leads; no separate source pin exists.
What ESD protection does MMRF1314H include, and how is it validated?
The MMRF1314H includes integrated ESD protection qualified per JESD22-A114 (HBM Class 2, 2500 V), JESD22-A115 (MM Class B, 200 V), and JESD22-C101 (CDM Class IV, 2000 V). These ratings are verified during production screening and reflect robustness against handling, board assembly, and system-level transients - essential for field-deployed radar hardware with limited service access.
MMRF1314H-1200 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-979A
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- LDMOS (Dual)
- Configuration:
- 2 N-Channel
- Frequency:
- 1.2GHz ~ 1.4GHz
- Gain:
- 17.7dB
- Voltage - Test:
- 52 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 1000W
- Voltage - Rated:
- 105 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-1230-4H
MMRF1314H-1200 FAQ
1.How can I place an order for MMRF1314H-1200 through Aetrix?
Please submit a Request for Quotation (RFQ) for MMRF1314H-1200 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMRF1314H-1200 reliable?
The price and inventory of MMRF1314H-1200 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMRF1314H-1200 is usually 5 days.
3.What payment methods are accepted for MMRF1314H-1200?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMRF1314H-1200 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMRF1314H-1200?
MMRF1314H-1200 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMRF1314H-1200 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMRF1314H-1200?
For technical support, including MMRF1314H-1200 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMRF1314H-1200 requirements.
6.How does Aetrix verify that MMRF1314H-1200 is sourced from the original manufacturer or authorized distributors?
All MMRF1314H-1200 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMRF1314H-1200 meets industry standards.
7.What is the process for return or replacement of MMRF1314H-1200?
All MMRF1314H-1200 units undergo pre-shipment inspection (PSI). If there is an issue with MMRF1314H-1200, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMRF1314H-1200 part is unused and in its original packaging.
Return procedure for MMRF1314H-1200:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMRF1314H-1200 Tags
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