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NXP Semiconductors MMRF1317H-1030
- Part No.:
- MMRF1317H-1030
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SOT-979A
- Datasheet:
-
MMRF1317H-1030.pdf
- Description:
- RF MOSFET LDMOS 50V NI1230
- Quantity:
- Payment:
- Shipping:
Inventory:2,152
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Product details
Overview
MMRF1317H-1030 from NXP (formerly Freescale) is a high-ruggedness, 50 V, 1300 W peak RF power LDMOS transistor designed for pulsed operation at 1030 MHz in secondary surveillance radar and IFF transponder systems. It delivers 1300 W peak output power with 18.9 dB power gain and 56.0% drain efficiency under 128 µs pulse width and 10% duty cycle conditions.
For engineers reviewing the MMRF1317H-1030 datasheet, MMRF1317H-1030 pinout, MMRF1317H-1030 application, or MMRF1317H-1030 equivalent, key selection criteria include VSWR >10:1 ruggedness at 1030 MHz, gate threshold voltage of 1.3–2.3 V, thermal impedance of 0.019 °C/W, ESD Class 2 HBM rating, and NI-1230H-4S eared ceramic package compatibility.
Technical Context
The MMRF1317H-1030 is a dual-gate, dual-drain N-channel enhancement-mode lateral MOSFET optimized for broadband pulsed RF amplification between 1020–1100 MHz. Its internally matched input/output enables direct integration into push-pull or quadrature configurations without external matching networks in reference circuits.
It operates with quiescent drain current IDQ(A+B) = 100 mA at VDD = 50 Vdc, supports 3 dB overdrive under >10:1 VSWR load mismatch at all phase angles, and features integrated ESD protection rated to 2500 V HBM - critical for gate-voltage pulsing in Class C radar modulators.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1020–1100 MHz - validated for 1030/1090 MHz radar beacon applications |
| Peak Output Power | 1300 W - delivered in 128 µs pulse, 10% duty cycle at 1030 MHz |
| Power Gain | 18.9 dB - measured in Freescale's 1030 MHz reference circuit |
| Drain Efficiency | 56.0% - enables thermally sustainable 1300 W peak operation at TC = 70°C |
| Thermal Impedance | 0.019 °C/W - junction-to-case value under pulsed 1300 W conditions |
| VSWR Ruggedness | >10:1 at all phase angles - tested with 40 W input (3 dB overdrive) at 1030 MHz |
| ESD Rating | HBM Class 2 (2500 V) - ensures robustness during handling and gate bias sequencing |
Pinout & Package
MMRF1317H-1030 is housed in the NI-1230H-4S air-cavity ceramic package with eared flange for mechanical stability and thermal interface. The backside metallization serves as the common source terminal. Pin 1 is Gate A, Pin 2 is Gate B, Pin 3 is Drain A, Pin 4 is Drain B - configured for balanced push-pull operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate A | Independent gate control for channel A; requires matched bias network in push-pull layout |
| Pin 2 | Gate B | Independent gate control for channel B; polarity-matched to Gate A for balanced drive |
| Pin 3 | Drain A | High-current RF output node for channel A; connected to output matching network |
| Pin 4 | Drain B | High-current RF output node for channel B; symmetric to Drain A for combiner feed |
| Backside | Source (Common) | Electrically and thermally tied to heatsink; forms return path for both channels |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched broadband design | Eliminates need for external input/output matching networks in 1030 MHz reference circuit |
| Push-pull / quadrature configurability | Enables scalable amplifier architectures without redesigning core transistor layout |
| 10:1 VSWR ruggedness | Guarantees no degradation under worst-case antenna mismatch in radar transmit paths |
| Integrated ESD protection | Supports reliable gate pulsing in Class C modulators without external clamp diodes |
| Series-equivalent impedance characterization | Provides Zsource = 6.03 – j2.97 Ω and Zload = 1.41 – j0.13 Ω at 1030 MHz for precise matching |
Applications
| Secondary Surveillance Radar (SSR) Transmitter | IFF Mode S Transponder |
|---|---|
Use Scenario: High-power pulsed transmission at 1030 MHz for aircraft interrogation response in civil ATC systems. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 1300 W peak pulses with 128 µs width and 10% duty cycle. Use Value: Enables long-range detection (>200 NM) while maintaining 56% drain efficiency to limit thermal load on airborne or ground-based cooling systems. |
Use Scenario: Military Identification Friend or Foe (IFF) transponders responding to 1030 MHz interrogations with encoded replies. IC Role / Device Role / Timing Role: High-ruggedness RF PA operating in pulse mode with strict timing compliance to NATO STANAG 4193. Use Value: Survives >10:1 VSWR mismatches caused by antenna switching or environmental icing - eliminating field failure risk. |
| Ground-Based Air Traffic Control Beacon | Pulse Radar Test Bench Amplifier |
Use Scenario: Fixed-site SSR installations requiring multi-year reliability under continuous pulsed operation. IC Role / Device Role / Timing Role: Primary 1030 MHz power stage in modular transmitter cabinets with forced-air or liquid cooling. Use Value: MTTF >1×10⁶ hours at TJ = 150°C enables >10-year field deployment without scheduled replacement. |
Use Scenario: Laboratory-grade RF power amplifier for validating radar waveform fidelity and linearity. IC Role / Device Role / Timing Role: Reference device in calibrated test fixtures per Freescale AN1955 thermal methodology. Use Value: Characterized large-signal impedance parameters (Zsource/Zload) allow repeatable, traceable gain/efficiency benchmarking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMRF1317HS | Same die, NI-1230S-4S earless package - 0.15 mm lower profile, identical electrical specs | Preferred for space-constrained PCB layouts where flange ears interfere with adjacent components | Select MMRF1317HS when mechanical clearance overrides mounting screw retention requirements |
| MMRF1050N | Lower Pout (500 W peak), 960–1215 MHz range, same NI-1230H-4S package and 50 V operation | Suitable for lighter-duty SSR or weather radar where 1300 W is excessive | Choose MMRF1050N for cost-sensitive or thermally constrained designs needing partial frequency overlap |
Compared with MMRF1317H-1030, MMRF1317HS offers identical RF performance in a lower-profile package ideal for dense layouts, while MMRF1050N trades peak power for broader bandwidth and reduced thermal demand - enabling tiered system scalability without architecture change.
Availability
MMRF1317H-1030 is available at Aetrix Electronics and suitable for secondary surveillance radar transmitters, IFF transponders, and ground-based ATC beacon systems requiring stable component supply across extended production lifecycles.
Supply support for MMRF1317H-1030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in high-performance RF power solutions, with heritage from Freescale's RF division. It specializes in rugged, high-efficiency transistors for defense, aerospace, and critical infrastructure.
The MMRF1317H-1030 belongs to NXP's MMRF family of LDMOS transistors engineered specifically for pulsed radar applications demanding extreme VSWR tolerance, high peak power, and long-term reliability in harsh environments.
FAQ
What is the maximum drain-source voltage rating for MMRF1317H-1030?
The MMRF1317H-1030 has a maximum drain-source voltage (VDSS) rating of +105 Vdc, with a minimum of –0.5 Vdc. This 105 V rating supports safe operation under transient overvoltage conditions typical in pulsed radar power supplies, and is validated per Freescale's Table 1 Maximum Ratings.
Does MMRF1317H-1030 require external input/output matching networks?
No - the MMRF1317H-1030 is internally input and output matched for broadband operation. Freescale's reference circuit achieves 1300 W peak output at 1030 MHz without discrete matching components on gate or drain, simplifying board layout and reducing insertion loss in the signal path.
What is the gate threshold voltage range for MMRF1317H-1030?
The gate threshold voltage (VGS(th)) for MMRF1317H-1030 is specified from 1.3 Vdc to 2.3 Vdc, measured at VDS = 10 Vdc and ID = 520 µAdc. This tight range ensures consistent turn-on behavior across units, critical for predictable Class C biasing in radar modulator designs.
How is thermal performance characterized for MMRF1317H-1030?
Thermal performance of MMRF1317H-1030 is quantified by a junction-to-case thermal impedance (ZθJC) of 0.019 °C/W, measured under pulsed 1300 W peak, 128 µs, 10% duty cycle, and TC = 70°C conditions. This value enables accurate heatsink sizing using Freescale AN1955 methodology.
Can MMRF1317H-1030 be used in single-ended configuration?
Yes - the MMRF1317H-1030 supports single-ended, push-pull, or quadrature configurations. Its dual-gate/dual-drain structure allows flexible implementation; in single-ended mode, one gate-drain pair is biased while the other is terminated, retaining full 1300 W capability per active channel.
MMRF1317H-1030 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-979A
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- LDMOS (Dual)
- Configuration:
- 2 N-Channel
- Frequency:
- 1.03GHz ~ 1.09GHz
- Gain:
- 18.2dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 1500W
- Voltage - Rated:
- 105 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-1230-4H
MMRF1317H-1030 FAQ
1.How can I place an order for MMRF1317H-1030 through Aetrix?
Please submit a Request for Quotation (RFQ) for MMRF1317H-1030 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMRF1317H-1030 reliable?
The price and inventory of MMRF1317H-1030 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMRF1317H-1030 is usually 5 days.
3.What payment methods are accepted for MMRF1317H-1030?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMRF1317H-1030 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMRF1317H-1030?
MMRF1317H-1030 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMRF1317H-1030 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMRF1317H-1030?
For technical support, including MMRF1317H-1030 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMRF1317H-1030 requirements.
6.How does Aetrix verify that MMRF1317H-1030 is sourced from the original manufacturer or authorized distributors?
All MMRF1317H-1030 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMRF1317H-1030 meets industry standards.
7.What is the process for return or replacement of MMRF1317H-1030?
All MMRF1317H-1030 units undergo pre-shipment inspection (PSI). If there is an issue with MMRF1317H-1030, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMRF1317H-1030 part is unused and in its original packaging.
Return procedure for MMRF1317H-1030:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMRF1317H-1030 Tags
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3SK294(TE85L,F)
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SAV-551+
Mini-Circuits
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TAV2-501+
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AFT05MS004NT1
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SAV-541+
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CE3512K2-C1
CEL
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AFM907NT1
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SKY65050-372LF
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CE3520K3-C1
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AFT09MS015NT1
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