My Inquiry
My Account
NXP Semiconductors MMRF2007NR1
- Part No.:
- MMRF2007NR1
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-270-16 Variant, Flat Leads
- Datasheet:
-
MMRF2007NR1.pdf
- Description:
- RF MOSFET LDMOS 28V TO270-16
- Quantity:
- Payment:
- Shipping:
Inventory:9,561
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MMRF2007NR1 from NXP is a 28 V LDMOS RF power transistor designed for broadband driver-stage amplification in aerospace and defense radar and communications systems. It delivers 35 W average RF output power across 136–940 MHz, with 32.6 dB gain at 940 MHz, 42.1% typical drain efficiency, and 0.6 °C/W junction-to-case thermal resistance in a TO-270WBL-16 over-molded plastic package.
For engineers reviewing the MMRF2007NR1 datasheet, MMRF2007NR1 pinout, MMRF2007NR1 application, or MMRF2007NR1 equivalent, this device is selected for high-reliability, wideband HF–UHF driver stages where ruggedness (>65:1 sustained VSWR), thermal performance, and stable gain flatness are critical in radar transmitters and tactical comms amplifiers.
Technical Context
The MMRF2007NR1 is an unmatched, internally matched LDMOS transistor optimized for Class AB operation in continuous-wave and pulsed RF amplifier designs. Its 28 V supply voltage, broadband frequency coverage (136–940 MHz), and low thermal resistance enable robust driver-stage performance without external matching networks across military HF/VHF/UHF bands.
It features integrated ESD protection and is rated for >65:1 sustained VSWR under mismatched load conditions - a key reliability feature for radar pulse amplifiers and field-deployable communications transceivers operating in harsh electromagnetic environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 136–940 MHz - supports HF/VHF/UHF radar and comms driver stages without band-specific redesign. |
| Output Power (Pout) | 35 W AVG - sufficient for multi-stage amplifier driver applications feeding final-stage GaN or LDMOS power modules. |
| Drain Efficiency | 42.1% TYP - reduces heat generation and DC power draw in compact, air-cooled RF subsystems. |
| Gain | 32.6 dB @ 940 MHz - provides high signal gain per stage, minimizing cascaded stages and associated noise/loss. |
| Junction-to-Case Thermal Resistance | 0.6 °C/W - enables high-power density mounting on heatsinks with minimal thermal derating in conduction-cooled enclosures. |
| Supply Voltage (VDD) | 28 V - compatible with standard military-grade 28 V DC power distribution systems. |
| VSWR Ruggedness | >65:1 sustained - ensures operational reliability during antenna mismatch events common in mobile radar and jammer systems. |
Pinout & Package
MMRF2007NR1 is housed in a TO-270WBL-16 over-molded plastic package with bolt-down flange, optimized for high thermal conductivity and RF stability. The package features low Au solderable finish, 225°C max junction temperature rating, and in-package impedance matching for broadband operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1–8 (Source) | Source terminals | Internally connected to flange ground - requires low-inductance thermal and RF grounding to heatsink. |
| Pin 9 (Gate) | RF input | High-impedance gate node; requires DC blocking and proper bias network for stable Class AB operation. |
| Pin 10–16 (Drain) | RF output / DC supply path | Parallel drain connections support high-current RF output and 28 V DC feed; must be decoupled with RF chokes and bypass capacitors. |
Key Features
| Feature | Design Value |
|---|---|
| Broadband unmatched operation | Eliminates need for external input/output matching networks across 136–940 MHz, reducing BOM count and layout complexity. |
| TO-270WBL-16 over-molded plastic package | Enables high-volume manufacturability, 225°C TJ rating, and 0.6 °C/W thermal resistance - superior to ceramic alternatives for cost-sensitive defense programs. |
| Integrated ESD protection | Protects gate dielectric during handling and system integration, improving yield in production assembly of radar TR modules. |
| >65:1 sustained VSWR ruggedness | Allows uninterrupted operation during antenna detuning or fault conditions - critical for airborne and naval radar transmitters. |
| 28 V LDMOS process | Delivers higher gain and efficiency than GaAs at UHF frequencies while maintaining proven reliability over 10+ year field deployments. |
Applications
| Radar Driver Amplifier | Tactical HF/VHF Communications Transmitter |
|---|---|
Use Scenario: Mid-power driver stage in ground-based early-warning radar transmitters operating across 225–400 MHz and 400–940 MHz bands. IC Role / Device Role / Timing Role: RF power driver amplifying low-level exciter signals to drive final-stage 50 V LDMOS or GaN power modules. Use Value: 32.6 dB gain and 35 W output reduce required driver stages; 0.6 °C/W thermal resistance enables compact conduction-cooled chassis design. | Use Scenario: High-reliability RF power amplifier in manpack and vehicle-mounted tactical radios compliant with MIL-STD-188-141B. IC Role / Device Role / Timing Role: Final RF driver in broadband HF/VHF transmitter chain delivering clean, linear output into variable antenna loads. Use Value: >65:1 VSWR ruggedness prevents shutdown during antenna flex or environmental detuning; 42.1% efficiency extends battery life in portable configurations. |
| Electronic Warfare Jammer Front-End | Test & Measurement Signal Generator Output Stage |
Use Scenario: Wideband driver in solid-state EW jammers covering 136–940 MHz for counter-UAS and communications denial missions. IC Role / Device Role / Timing Role: High-linearity driver amplifying digitally synthesized jamming waveforms prior to final amplification and antenna coupling. Use Value: Broadband gain flatness ensures uniform spectral coverage; unmatched design simplifies rapid reconfiguration across threat bands. | Use Scenario: Output driver in benchtop RF signal generators requiring stable, low-distortion CW/pulse output up to 940 MHz. IC Role / Device Role / Timing Role: Precision driver stage delivering calibrated RF power into 50 Ω test ports with minimal harmonic content. Use Value: 35 W AVG output supports high-dynamic-range testing; 28 V supply aligns with standard lab power supplies and safety standards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMRF2007GNR1 | Same electrical specs; uses TO-270WBLG-16 package with gold-plated flange for enhanced corrosion resistance and solderability. | Suitable for maritime or high-humidity environments where long-term flange integrity is critical. | Select MMRF2007GNR1 when extended environmental qualification (e.g., MIL-STD-810 salt fog) is required. |
| MMRF1315NR1 | Higher power (60 W CW), narrower bandwidth (500–1000 MHz), lower gain (20.0 dB), and different package (TO-270-2). | Better suited for fixed-band L-band radar drivers where peak efficiency >63% outweighs broadband flexibility. | Choose MMRF1315NR1 only if operating exclusively within 500–1000 MHz and requiring maximum efficiency over bandwidth. |
Compared with MMRF2007NR1, MMRF2007GNR1 offers identical RF performance with improved environmental robustness, while MMRF1315NR1 trades bandwidth and gain for higher CW output and efficiency in a narrower band - making MMRF2007NR1 the optimal choice for wideband HF–UHF driver applications demanding both flexibility and ruggedness.
Availability
MMRF2007NR1 is available at Aetrix Electronics and suitable for radar driver amplifiers, tactical communications transmitters, and electronic warfare jammer front-ends requiring stable component supply across extended defense program lifecycles.
Supply support for MMRF2007NR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a U.S.-based semiconductor company and global leader in RF power technology, with dedicated manufacturing for LDMOS and GaN devices in U.S. fabs.
The MMRF2007NR1 belongs to NXP's RF Aerospace and Defense Solutions portfolio, engineered specifically for rugged, high-reliability driver-stage amplification in radar, communications, and electronic warfare systems operating in extreme environments.
FAQ
What is the maximum junction temperature rating for MMRF2007NR1?
The MMRF2007NR1 has a maximum junction temperature (TJ) rating of 225°C, enabled by its TO-270WBL-16 over-molded plastic package with low thermal resistance (0.6 °C/W) and high-temperature molding compound. This allows operation in high-ambient environments typical of airborne and shipboard radar installations, provided heatsink temperature remains within specification limits defined in the NXP thermal design guidelines for MMRF2007NR1.
Does MMRF2007NR1 require external matching networks for operation across its full 136–940 MHz band?
No, MMRF2007NR1 is an internally unmatched LDMOS transistor with in-package impedance matching optimized for broadband operation from 136–940 MHz. NXP's design eliminates the need for external input/output matching networks in most Class AB driver-stage applications, reducing PCB area, component count, and tuning complexity - though narrowband optimization may still use external tuning for peak efficiency in specific sub-bands of the MMRF2007NR1 frequency range.
How does the VSWR ruggedness of MMRF2007NR1 compare to standard commercial RF transistors?
MMRF2007NR1 is rated for >65:1 sustained VSWR - significantly exceeding the 10:1 or 20:1 ratings typical of commercial RF transistors. This ruggedness is achieved via NXP's proprietary LDMOS process and layout hardening, enabling reliable operation during antenna mismatch events in mobile radar and jammer systems. Unlike standard parts that fail or shut down under high VSWR, MMRF2007NR1 maintains functionality, making it suitable for mission-critical defense applications where load variations are unavoidable.
Can MMRF2007NR1 be used in Class C or pulsed RF amplifier designs?
MMRF2007NR1 is characterized and qualified for Class AB operation, and its datasheet specifies performance metrics (gain, efficiency, linearity) under Class AB bias conditions. While it may function in Class C or pulsed modes, NXP does not guarantee parameters such as pulse fidelity, droop, or thermal stability outside the validated Class AB envelope. For pulsed radar applications, MMRF2007NR1 is recommended only when operated within its specified average power (35 W), duty cycle, and thermal limits - and verified with pulse testing per MIL-STD-750 Method 3401 for MMRF2007NR1.
Is the TO-270WBL-16 package of MMRF2007NR1 compatible with automated SMT reflow assembly?
Yes, the TO-270WBL-16 package of MMRF2007NR1 supports solder reflow mounting per JEDEC J-STD-020 moisture sensitivity level (MSL) and thermal profile specifications. Its over-molded plastic construction and low-Au solderable finish are qualified for high-volume automated assembly. However, due to its high thermal mass and flange grounding requirement, NXP recommends using controlled ramp-soak-reflow profiles with peak temperatures ≤235°C and strict adherence to the MMRF2007NR1 mounting application note for optimal thermal interface and mechanical reliability.
MMRF2007NR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-270-16 Variant, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 940MHz
- Gain:
- 32.6dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 60 mA
- Power - Output:
- 35W
- Voltage - Rated:
- 70 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-270 WBL-16
MMRF2007NR1 FAQ
1.How can I place an order for MMRF2007NR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MMRF2007NR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMRF2007NR1 reliable?
The price and inventory of MMRF2007NR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMRF2007NR1 is usually 5 days.
3.What payment methods are accepted for MMRF2007NR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMRF2007NR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMRF2007NR1?
MMRF2007NR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMRF2007NR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMRF2007NR1?
For technical support, including MMRF2007NR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMRF2007NR1 requirements.
6.How does Aetrix verify that MMRF2007NR1 is sourced from the original manufacturer or authorized distributors?
All MMRF2007NR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMRF2007NR1 meets industry standards.
7.What is the process for return or replacement of MMRF2007NR1?
All MMRF2007NR1 units undergo pre-shipment inspection (PSI). If there is an issue with MMRF2007NR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMRF2007NR1 part is unused and in its original packaging.
Return procedure for MMRF2007NR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMRF2007NR1 Tags
-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits
-
TAV2-501+
Mini-Circuits
-
CE3514M4-C2
CEL
-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits
-
CE3512K2-C1
CEL
-
AFM907NT1
NXP Semiconductors
-
SKY65050-372LF
Skyworks Solutions Inc.
-
CE3520K3-C1
CEL
-
AFT09MS007NT1
NXP USA Inc.
-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
