NXP Semiconductors MMRF5017HS-1GHZ

Overview

MMRF5017HS-1GHZ from NXP Semiconductors is a 125 W RF power GaN-on-SiC transistor designed for high-efficiency, rugged broadband amplification from 30 to 2200 MHz. It delivers 125 W CW output at 520 MHz with 18.0 dB power gain and 59.1% drain efficiency at 50 Vdc, and supports pulse operation up to 200 W at 2200 MHz. Its input-matched NI-400S-2S package enables rapid integration into military radar, jammer, and wideband lab amplifier systems.

For engineers reviewing the MMRF5017HS-1GHZ datasheet, MMRF5017HS-1GHZ pinout, MMRF5017HS-1GHZ application, or MMRF5017HS-1GHZ equivalent, key selection criteria include guaranteed 30–2200 MHz bandwidth, >10:1 VSWR ruggedness under overdrive, GaN thermal robustness up to 225°C junction temperature, and compatibility with 50 Vdc bias sequencing per NXP AN1908.

Technical Context

This GaN HEMT operates in depletion mode and requires precise gate bias sequencing: V_GS must be set to –5 V before applying V_DS, and V_GS must return to –5 V before ramping down V_DS. Its on-state threshold voltage is –3.0 V (typ), with quiescent gate voltage of –3.1 V at 200 mA IDQ.

The device integrates input matching for extended bandwidth and achieves thermal resistance R_θJC(IR) = 1.3 °C/W under 80 W CW conditions. Channel-to-case thermal resistance (FEA) is 1.77 °C/W, supporting reliability modeling up to 350°C maximum channel temperature.

Key Specifications

Pinout & Package

The MMRF5017HS-1GHZ is housed in an NI-400S-2S air-cavity ceramic package with metalized backside acting as the source terminal. The top-view pin configuration has Gate at Pin 1 and Drain at Pin 2; no dedicated source pin is provided - source connection is made via soldered backside mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with CGHV1F025S, MMRF5017HS-1GHZ delivers 5× more output power and broader bandwidth; compared with MMRF5022HS, it offers proven ruggedness at lower cost and reduced thermal management complexity for 125 W-class systems.

Availability

MMRF5017HS-1GHZ is available at Aetrix Electronics and suitable for military radar transmitters, electronic warfare jammers, and public safety radio infrastructure requiring stable component supply and long-term obsolescence management.

Supply support for MMRF5017HS-1GHZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies.

The MMRF5017HS-1GHZ belongs to NXP's high-power GaN transistor product line, engineered specifically for rugged, wideband defense and critical infrastructure amplifiers where reliability under mismatch and thermal stress is non-negotiable.

FAQ

What is the absolute maximum drain-source voltage rating for MMRF5017HS-1GHZ?

The absolute maximum drain-source voltage (V_DSS) for MMRF5017HS-1GHZ is 125 Vdc, as specified in Table 1 of the NXP datasheet. This rating defines the upper limit for safe DC bias application and must not be exceeded during operation or transient events. Exceeding 125 Vdc risks permanent device failure. The MMRF5017HS-1GHZ is typically operated at 50 Vdc for optimal efficiency and reliability across its 30–2200 MHz band.

Does MMRF5017HS-1GHZ require external input matching networks?

No - MMRF5017HS-1GHZ integrates input matching optimized for the 30–940 MHz reference circuit, eliminating discrete input matching components in that band. However, for operation above 940 MHz (e.g., at 2200 MHz), external tuning may be required to maintain impedance match and efficiency. The MMRF5017HS-1GHZ datasheet provides Z_source and Z_load data across the full 30–940 MHz range to guide custom matching design.

What is the recommended gate bias sequence for turning on MMRF5017HS-1GHZ?

NXP specifies a strict four-step turn-on sequence for MMRF5017HS-1GHZ: (1) Set V_GS to –5 V, (2) Apply V_DS to nominal 50 Vdc, (3) Adjust V_GS to achieve target I_DQ = 200 mA, then (4) apply RF input. This prevents gate overvoltage and latch-up. The MMRF5017HS-1GHZ must never be biased with V_DS applied before V_GS is established at –5 V.

Can MMRF5017HS-1GHZ be used outside its specified 30–2200 MHz frequency range?

No - NXP explicitly states there is no guarantee of performance for MMRF5017HS-1GHZ when used outside 30–2200 MHz. Performance metrics including gain, efficiency, and ruggedness are characterized and warranted only within this band. Using MMRF5017HS-1GHZ below 30 MHz or above 2200 MHz may result in unpredictable behavior, thermal runaway, or premature failure due to unvalidated impedance and thermal profiles.

What thermal measurement methodology applies to MMRF5017HS-1GHZ?

The MMRF5017HS-1GHZ thermal resistance R_θJC(IR) = 1.3 °C/W is measured by infrared thermography per AN1955, using a 30–940 MHz reference circuit at 80 W CW. For reliability modeling, the finite-element-analysis-derived R_θCHC = 1.77 °C/W must be used to estimate channel temperature and MTTF. Both values are documented in the MMRF5017HS-1GHZ datasheet and validated under controlled test conditions.