NXP Semiconductors MMRF5017HSR5

Overview

MMRF5017HSR5 from NXP Semiconductors is a 125 W RF power GaN-on-SiC transistor designed for high-efficiency, rugged broadband amplification from 30 to 2200 MHz. It delivers 125 W CW output at 520 MHz with 18.0 dB power gain and 59.1% drain efficiency at 50 Vdc, and supports pulse operation up to 200 W at 2200 MHz. Its input-matched NI-400S-2S package enables rapid integration into military radar, jammer, and wideband lab amplifier systems.

For engineers reviewing the MMRF5017HSR5 datasheet, MMRF5017HSR5 pinout, MMRF5017HSR5 application, or MMRF5017HSR5 equivalent, key selection criteria include guaranteed 30–2200 MHz bandwidth, >10:1 VSWR ruggedness under overdrive, GaN channel temperature limit of 350 °C, and NI-400S-2S thermal resistance of 1.3 °C/W (IR-measured).

Technical Context

This GaN HEMT operates in depletion mode and requires precise gate bias sequencing: V_GS must be set to –5 V before applying V_DS, and V_GS reduced to –5 V before ramping down V_DS to avoid damage. Its on-state threshold voltage is –3.0 V (typ), with quiescent gate voltage –3.1 V (typ) at 200 mA I_DQ.

The device is characterized in a 30–940 MHz wideband reference circuit featuring discrete matching networks and uses a source-down NI-400S-2S air-cavity package where the backside metallization serves as the source terminal - critical for thermal and RF grounding integrity in high-power layouts.

Key Specifications

Pinout & Package

The MMRF5017HSR5 is housed in an NI-400S-2S air-cavity ceramic/metal package with source-down thermal configuration. The backside metallization is electrically and thermally connected to the source terminal. Package dimensions comply with JEDEC MO-212 variant, optimized for RF grounding and high-power thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with CGHV1F025S and BLF278, the MMRF5017HSR5 provides highest CW power (125 W) and ruggedness (>10:1 VSWR) in the 30–2200 MHz band, making it optimal for mission-critical military and test equipment where bandwidth, reliability, and power density are prioritized over LDMOS maturity or cost-per-watt.

Availability

MMRF5017HSR5 is available at Aetrix Electronics and suitable for military radar transmitters, electronic warfare jammers, and EMC immunity testing systems requiring stable component supply and long-term lifecycle support.

Supply support for MMRF5017HSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT markets, with deep expertise in RF power and GaN technology.

The MMRF5017HSR5 belongs to NXP's high-power GaN transistor product line, engineered specifically for broadband defense, aerospace, and test instrumentation applications demanding wide frequency coverage, high efficiency, and field-proven ruggedness.

FAQ

What is the recommended gate bias sequence for safe operation of the MMRF5017HSR5?

The MMRF5017HSR5 is a depletion-mode GaN HEMT requiring strict bias sequencing. To turn ON: first set V_GS to –5 V, then apply V_DS to 50 Vdc, adjust V_GS to achieve 200 mA I_DQ, then apply RF. To turn OFF: remove RF, reduce V_GS to –5 V, ramp V_DS to 0 V (with sufficient settling time), then disable V_GS. Violating this sequence risks catastrophic failure. This procedure is documented in the MMRF5017HS datasheet Section "Correct Biasing Sequence for GaN Depletion Mode Transistors".

Does the MMRF5017HSR5 require external input matching for operation across its full 30–2200 MHz range?

No - the MMRF5017HSR5 integrates input matching optimized for the 30–940 MHz band, as verified in the NXP wideband reference circuit (Figure 2). For operation above 940 MHz up to 2200 MHz, external tuning may be needed to maintain gain flatness and return loss; the datasheet confirms guaranteed performance only within 30–2200 MHz but specifies input match characterization up to 940 MHz. The MMRF5017HSR5 datasheet Table 6 lists component values for the validated 30–940 MHz matching network.

What thermal interface material and mounting method are recommended for the MMRF5017HSR5 NI-400S-2S package?

NXP recommends solder reflow attachment using AuSn eutectic solder for the MMRF5017HSR5 NI-400S-2S package, as detailed in Application Note AN1908. Thermal interface materials must support >200 °C peak reflow temperatures and provide low interfacial resistance between the source-down flange and copper heatsink. Mechanical clamping is not advised; the MMRF5017HSR5 requires direct-solder die attach to ensure R_θJC ≤ 1.3 °C/W and prevent delamination under thermal cycling.

Is the MMRF5017HSR5 qualified for use in aerospace or space-grade applications?

The MMRF5017HSR5 is not explicitly screened or certified to MIL-PRF-19500, ESCC 22600, or QML-V standards. It is characterized for commercial and industrial use with case temperature range –55 °C to +150 °C and junction limit +225 °C. While its GaN-on-SiC construction and 350 °C absolute channel temperature capability support harsh environments, formal aerospace qualification requires additional lot-level testing and documentation not provided in the MMRF5017HSR5 datasheet or ordering information.

How does the MMRF5017HSR5's ruggedness specification compare to legacy LDMOS devices in radar applications?

The MMRF5017HSR5 guarantees survival under >10:1 VSWR at all phase angles with 3.4 W overdrive at 520 MHz - exceeding typical LDMOS ruggedness (6:1 to 8:1 VSWR). This allows direct antenna connection in pulsed radar without isolators, reducing insertion loss and system complexity. Unlike LDMOS, the MMRF5017HSR5 maintains this rating across its entire 30–2200 MHz band, whereas most LDMOS devices degrade significantly above 1 GHz. The MMRF5017HSR5 datasheet Load Mismatch/Ruggedness table (page 2) validates this performance.