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Diodes Incorporated MMST5551-7-F
- Part No.:
- MMST5551-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
MMST5551-7-F.pdf
- Description:
- TRANS NPN 160V 0.2A SOT-323
- Quantity:
- Payment:
- Shipping:
Inventory:10,793
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Product details
Overview
MMST5551-7-F from Diodes Incorporated is a 160V NPN small-signal transistor in SOT323 package, rated for 200 mA continuous collector current, 200 mW power dissipation, and 100–300 MHz fT. It delivers hFE = 80–250 at IC = 1–50 mA and VCE = 5 V, with VCE(sat) ≤ 0.20 V at IC = 50 mA / IB = 5 mA. It is widely used in low-power switching and amplification stages of sensor interface and signal conditioning circuits.
For engineers reviewing the MMST5551-7-F datasheet, MMST5551-7-F pinout, MMST5551-7-F application, or MMST5551-7-F equivalent, key selection criteria include its 160 V VCEO, ultra-small SOT323 footprint, JEDEC-qualified reliability, complementary pairing with MMST5401, and suitability for space-constrained industrial and automotive signal-path designs.
Technical Context
This NPN bipolar junction transistor uses epitaxial planar die construction to ensure stable gain and low leakage across temperature. Its 6.0 V VEBO and 4 kV HBM ESD rating support robust operation in noisy analog front-ends and digital logic interfaces.
The device operates over –55°C to +150°C and maintains hFE ≥ 80 at IC = 1 mA and VCE = 5 V, while delivering fT ≥ 100 MHz - enabling use in RF preamps up to ~100 MHz and fast-switching control nodes in DC-DC feedback paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 160 V - supports high-side switching in 12–48 V supply rails without breakdown risk |
| IC (max) | 200 mA - sufficient for driving small relays, LEDs, or logic-level MOSFET gates |
| PD | 200 mW - enables operation on minimal copper area (1 oz FR4, single-sided) without heatsinking |
| fT | 100–300 MHz - usable in VHF amplification and fast pulse shaping up to ~100 MHz |
| hFE | 80–250 - provides predictable DC gain across 1–50 mA bias range for stable amplifier biasing |
| VCE(sat) | ≤ 0.20 V @ IC/IB = 50/5 mA - minimizes conduction loss in saturated-switch applications |
| ESD HBM | 4,000 V - reduces need for external protection in board-level ESD-prone environments |
Pinout & Package
Package: SOT323 - ultra-small surface-mount plastic package (2.15 mm × 2.10 mm × 0.95 mm), moisture sensitivity level 1, matte tin-plated leads solderable per MIL-STD-202.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current sink terminal | Connected to ground or low-impedance return path; defines reference for base drive and collector load |
| 2 (Base) | Control input | Receives current-limited drive to switch or bias the transistor; requires series resistor for current limiting |
| 3 (Collector) | Current source terminal | Connected to load and positive rail; carries full switched or amplified output current |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small SOT323 footprint | Enables placement in dense PCB layouts where board space is constrained below 5 mm² |
| JEDEC-qualified high-reliability | Meets AEC-Q101 stress test requirements for automotive-grade discrete transistors |
| Complementary PNP pairing | Direct match with MMST5401 for push-pull, differential pair, or level-shifting topologies |
| Halogen- and antimony-free "Green" construction | Contains <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - compliant with global environmental directives |
| Low VCE(sat) at medium current | 0.15 V @ 10 mA / 1 mA drive - reduces power loss and thermal rise in switching regulators |
Applications
| Industrial Sensor Interface | Automotive LED Driver |
|---|---|
Use Scenario: Amplifying low-level analog signals from RTDs, thermocouples, or bridge sensors before ADC sampling. IC Role / Device Role / Timing Role: NPN common-emitter amplifier stage providing 20–50× voltage gain with low noise (NF ≤ 8 dB). Use Value: Enables accurate sub-mV signal resolution without external op-amp, reducing BOM count and layout area. |
Use Scenario: Switching 20–100 mA current through automotive cabin or indicator LEDs. IC Role / Device Role / Timing Role: Low-side saturated switch controlled by MCU GPIO or CAN/LIN transceiver output. Use Value: Delivers <0.2 V dropout at 50 mA, minimizing heat generation and supporting 100% duty-cycle operation. |
| Power Supply Feedback | IoT Signal Conditioning |
Use Scenario: Isolating and translating error amplifier output to optocoupler input in isolated DC-DC converters. IC Role / Device Role / Timing Role: Linear-mode current buffer ensuring stable 5–10 mA drive into optocoupler LED anode. Use Value: Maintains tight regulation loop stability with hFE ≥ 80 across –40°C to +125°C ambient. |
Use Scenario: Level-shifting UART or I²C signals between 3.3 V microcontrollers and 5 V peripherals in battery-powered edge devices. IC Role / Device Role / Timing Role: Bidirectional open-collector translator using two MMST5551s in back-to-back configuration. Use Value: Supports >1 Mbps data rates due to fT ≥ 100 MHz and low Cobo = 6 pF, minimizing signal distortion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN small-signal transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847BW,115 | Lower VCEO (45 V), higher hFE (110–800), same SOT323 package | Not suitable for >45 V rails; better for precision biasing where gain spread matters more than voltage rating | Select when operating below 30 V and requiring tighter hFE tolerance or lower VBE(sat) |
| MMBT5551-7-F | Same die, larger SOT23 package (3.0 × 1.4 mm), 350 mW PD, identical electrical specs | Preferred where thermal margin or hand-soldering ease outweighs board-space constraints | Choose for prototyping, higher-power variants, or legacy SOT23-compatible footprints |
Compared with BC847BW and MMBT5551-7-F, MMST5551-7-F uniquely balances 160 V capability, ultra-compact size, and automotive-grade reliability - making it optimal for space-limited, high-voltage signal switching where thermal headroom is moderate.
Availability
MMST5551-7-F is available at Aetrix Electronics and suitable for industrial sensor interfaces, automotive LED drivers, and IoT signal conditioning requiring stable component supply and long-term manufacturability.
Supply support for MMST5551-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs, with manufacturing certified to IATF 16949 and product qualification to AEC-Q101.
The MMST5551 belongs to Diodes' high-reliability small-signal transistor family, designed specifically for space-constrained, high-voltage analog and switching functions in automotive, industrial, and computing applications.
FAQ
Is MMST5551-7-F qualified for automotive applications?
Yes - the MMST5551 is qualified to AEC-Q101 standards and manufactured in IATF 16949-certified facilities. While the standard part is not PPAP-capable, Diodes offers automotive-grade Q-suffix variants (e.g., MMST5551Q-7-F) with full change control and PPAP documentation upon request.
What is the maximum safe operating temperature for MMST5551-7-F?
The device supports junction temperatures from –55°C to +150°C. At ambient temperatures above +70°C, derating applies: maximum power dissipation drops linearly from 200 mW at 25°C to 0 mW at 150°C, per Fig. 1 in DS30173 Rev. 10–2.
Can MMST5551-7-F replace BC547 in existing designs?
No - BC547 has VCEO = 45 V and is TO-92 packaged. MMST5551-7-F offers 3.5× higher voltage rating but requires SOT323 re-layout. For direct replacement, consider MMBT5551-7-F (SOT23) or BC847BW (same SOT323, lower voltage).
Does MMST5551-7-F support bidirectional signal translation?
Yes - when paired with a complementary PNP (e.g., MMST5401) in open-collector configuration, it enables bidirectional level shifting for I²C or SMBus. Its 6 pF Cobo and 100+ MHz fT preserve signal integrity up to 400 kHz standard-mode and 1 MHz fast-mode speeds.
MMST5551-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 200 mA
- Voltage - Collector Emitter Breakdown (Max):
- 160 V
- Vce Saturation (Max) @ Ib, Ic:
- 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 80 @ 10mA, 5V
- Power - Max:
- 200 mW
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
MMST5551-7-F FAQ
1.How can I place an order for MMST5551-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for MMST5551-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMST5551-7-F reliable?
The price and inventory of MMST5551-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMST5551-7-F is usually 5 days.
3.What payment methods are accepted for MMST5551-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMST5551-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMST5551-7-F?
MMST5551-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMST5551-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMST5551-7-F?
For technical support, including MMST5551-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMST5551-7-F requirements.
6.How does Aetrix verify that MMST5551-7-F is sourced from the original manufacturer or authorized distributors?
All MMST5551-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMST5551-7-F meets industry standards.
7.What is the process for return or replacement of MMST5551-7-F?
All MMST5551-7-F units undergo pre-shipment inspection (PSI). If there is an issue with MMST5551-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMST5551-7-F part is unused and in its original packaging.
Return procedure for MMST5551-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMST5551-7-F Tags
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MMBT3906LT1G
onsemi
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Diodes Incorporated
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MMBT3904LT1G
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