Diodes Incorporated MMST5551Q-7-F
- Part No.:
- MMST5551Q-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
MMST5551Q-7-F.pdf
- Description:
- TRANS NPN 160V 0.2A SOT-323
- Quantity:
- Payment:

- Shipping:

Inventory:1,237
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Product details
Overview
MMST5551Q-7-F from Diodes Incorporated is a 160V NPN small-signal transistor in SOT323 package, rated for 200 mA continuous collector current, 200 mW power dissipation, and 100–300 MHz gain-bandwidth product. It delivers VCE(sat) ≤ 0.20 V at IC = 50 mA / IB = 5 mA and hFE = 80–250 across 1–50 mA, enabling low-power switching and amplification in space-constrained analog front-ends and signal conditioning circuits.
For engineers reviewing the MMST5551Q-7-F datasheet, MMST5551Q-7-F pinout, MMST5551Q-7-F application, or MMST5551Q-7-F equivalent, key selection criteria include its 160 V VCEO, JEDEC-qualified reliability, ultra-small SOT323 footprint, and complementary pairing with MMST5401 for push-pull configurations in portable instrumentation and sensor interface stages.
Technical Context
This NPN bipolar junction transistor uses epitaxial planar die construction for stable hFE and low leakage (ICBO ≤ 50 nA at 120 V), supporting precision biasing and low-noise preamplification. Its fT ≥ 100 MHz and NF ≤ 8.0 dB at 1 kHz make it suitable for RF front-end gain stages up to VHF band.
The device operates across –55°C to +150°C, with RθJA = 625°C/W on minimum FR4 pad layout, and meets JEDEC high-reliability standards. ESD ratings include 4 kV HBM and 1 kV CDM, confirming robustness in automated assembly and field-deployed electronics.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 160 V - Supports operation in 120 V AC-derived rails and flyback snubber circuits without breakdown. |
| IC (max) | 200 mA - Enables driving small relays, LEDs, or logic-level shifters in battery-powered systems. |
| PD | 200 mW - Limits thermal rise to safe levels in unheatsinked SOT323 layouts at ambient ≤ 70°C. |
| fT | 100–300 MHz - Allows use in IF amplifiers, oscillator buffers, and broadband signal conditioning up to ~100 MHz. |
| hFE | 80–250 - Provides predictable DC gain across 1–50 mA collector range for stable bias design. |
| VCE(sat) | ≤ 0.20 V @ 50 mA - Minimizes conduction loss and self-heating in saturated-switch applications. |
| NF | ≤ 8.0 dB @ 1 kHz - Ensures low-noise amplification for sensor signal chains with microvolt-level inputs. |
Pinout & Package
Package: SOT323 - ultra-small surface-mount plastic package (2.15 mm × 2.10 mm × 0.95 mm), moisture sensitivity level 1, matte tin-plated leads, 0.006 g weight.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current sink terminal | Connected to ground or low-impedance return path; defines reference for base drive and collector load. |
| 2 (Base) | Control input | Receives current-limited drive (e.g., via 10 kΩ resistor) to set operating point; sensitive to ESD. |
| 3 (Collector) | Current source terminal | Connects to load (e.g., pull-up resistor or transformer primary); handles full switched voltage swing. |
Key Features
| Feature | Design Value |
|---|---|
| Epitaxial planar die | Ensures tight hFE distribution and low parameter drift over temperature and lifetime. |
| Ultra-small SOT323 footprint | Reduces PCB area by >50% vs. SOT23, critical for wearables and miniaturized IoT sensor nodes. |
| Complementary PNP pairing | Direct match with MMST5401 enables matched push-pull output stages with symmetrical drive capability. |
| JEDEC-qualified reliability | Validated per AEC-Q101 stress tests, supporting industrial control and automotive body electronics. |
| Halogen- and antimony-free "Green" compound | Meets <900 ppm Br/Cl and <1000 ppm Sb, satisfying strict environmental compliance for global OEMs. |
Applications
| Audio Preamp Stage | Low-Voltage Switch Driver |
|---|---|
Use Scenario: Amplifying microphone or piezoelectric sensor outputs in portable medical monitors. IC Role / Device Role / Timing Role: NPN common-emitter amplifier with fixed bias network and emitter degeneration resistor. Use Value: 8.0 dB noise figure and 250 hFE enable >60 dB SNR in 200 µA quiescent current designs. |
Use Scenario: Driving 5 V logic-controlled LED indicators and optocoupler inputs in PLC I/O modules. IC Role / Device Role / Timing Role: Saturated switch with base resistor limiting IB to ensure hard saturation at 200 mA load. Use Value: VCE(sat) ≤ 0.15 V at 10 mA ensures <0.75 mW conduction loss and minimal self-heating. |
| RF Signal Buffer | High-Voltage Level Shifter |
Use Scenario: Isolating and buffering 10–50 MHz clock signals between mixed-voltage domains in FPGA carrier boards. IC Role / Device Role / Timing Role: Common-collector emitter-follower providing low-output-impedance drive with unity voltage gain. Use Value: fT ≥ 100 MHz supports <5% gain roll-off at 50 MHz, preserving edge integrity. |
Use Scenario: Translating 3.3 V microcontroller GPIO to 12–24 V industrial control signals for solenoid drivers. IC Role / Device Role / Timing Role: High-voltage NPN switch with collector tied to 24 V rail and emitter grounded. Use Value: 160 V VCEO provides 40% margin above 24 V supply, preventing avalanche during inductive kickback. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN small-signal transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847BW,115 | Lower VCEO (45 V), higher hFE (110–800), same SOT323 package | Not suitable for >45 V rails; preferred where high gain and low noise at µA bias are prioritized | Select when operating below 30 V and requiring tighter hFE tolerance or lower VBE(sat). |
| MMBT5551 | Same electrical specs but in SOT23 package (larger footprint, higher RθJA = 350°C/W) | Acceptable where board space allows and thermal margin is less constrained | Choose only if SOT23 is already standardized in design and 200 mW derating is verified. |
Compared with BC847BW and MMBT5551, MMST5551Q-7-F uniquely balances 160 V rating, SOT323 miniaturization, and JEDEC reliability-making it optimal for compact, high-voltage, and thermally constrained signal switching where alternatives compromise either voltage headroom, size, or qualification status.
Availability
MMST5551Q-7-F is available at Aetrix Electronics and suitable for portable medical sensors, industrial I/O modules, and FPGA clock buffer circuits requiring stable component supply, RoHS/Green compliance, and AEC-Q101-aligned reliability.
Supply support for MMST5551Q-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
MMST5551Q-7-F belongs to Diodes' high-reliability small-signal transistor product line, engineered for space-efficient, low-power amplification and switching in automotive body electronics, industrial controls, and portable instrumentation.
FAQ
Is MMST5551Q-7-F pin-compatible with standard SOT323 transistors like BC847 series?
No-while both use SOT323, MMST5551Q-7-F has emitter-base-collector pinout (1-E, 2-B, 3-C), whereas BC847BW uses emitter-collector-base (1-E, 2-C, 3-B). Incorrect PCB layout causes functional failure. Always verify top-view marking and pin 1 orientation using Diodes' package drawing DS30173 Rev. 10-2, page 5.
What is the maximum allowable collector current at 100°C ambient temperature?
Derating begins at 25°C: PD = 200 mW with RθJA = 625°C/W. At TA = 100°C, max power drops to 100 mW. Using VCE(sat) ≈ 0.15 V, max IC = 100 mW / 0.15 V ≈ 670 mA-but absolute maximum rating caps IC at 200 mA regardless of temperature. So 200 mA remains the hard limit.
Does MMST5551Q-7-F meet AEC-Q101 requirements for automotive use?
Yes-the MMST5551Q-7-F is qualified to AEC-Q101 Rev. D for stress testing including HTGB, HTRB, and ESD. It is manufactured in IATF 16949-certified facilities and supports PPAP documentation. Note: The "Q" suffix denotes automotive qualification; non-Q variants (e.g., MMST5551-7-F) are not AEC-Q101 certified.
Can MMST5551Q-7-F replace MMBT5551 in existing SOT23 designs?
No-SOT323 (MMST5551Q-7-F) and SOT23 (MMBT5551) have different footprints, pad layouts, and thermal characteristics. Direct replacement requires PCB redesign. While electrical specs align, RθJA increases from ~350°C/W (SOT23) to 625°C/W (SOT323), demanding stricter thermal validation in high-duty-cycle applications.
MMST5551Q-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 200 mA
- Voltage - Collector Emitter Breakdown (Max):
- 160 V
- Vce Saturation (Max) @ Ib, Ic:
- 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 80 @ 10mA, 5V
- Power - Max:
- 200 mW
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
MMST5551Q-7-F FAQ
1.How can I place an order for MMST5551Q-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for MMST5551Q-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMST5551Q-7-F reliable?
The price and inventory of MMST5551Q-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMST5551Q-7-F is usually 5 days.
3.What payment methods are accepted for MMST5551Q-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMST5551Q-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMST5551Q-7-F?
MMST5551Q-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMST5551Q-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMST5551Q-7-F?
For technical support, including MMST5551Q-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMST5551Q-7-F requirements.
6.How does Aetrix verify that MMST5551Q-7-F is sourced from the original manufacturer or authorized distributors?
All MMST5551Q-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMST5551Q-7-F meets industry standards.
7.What is the process for return or replacement of MMST5551Q-7-F?
All MMST5551Q-7-F units undergo pre-shipment inspection (PSI). If there is an issue with MMST5551Q-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMST5551Q-7-F part is unused and in its original packaging.
Return procedure for MMST5551Q-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMST5551Q-7-F Tags

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MMBT3906LT1G
onsemi

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MMBT3904-7-F
Diodes Incorporated

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MMBT3904LT1G
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Diodes Incorporated

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Micro Commercial Co

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MMBT2222A-7-F
Diodes Incorporated

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BC847B,215
Nexperia USA Inc.

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MMBTA06LT1G
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