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Monolithic Power Systems Inc. MP20073DH-LF-P

Part No.:
MP20073DH-LF-P
Manufacturer:
Monolithic Power Systems Inc.
Category:
Special Purpose Regulators
Package:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Datasheet:
AetrixMP20073DH-LF-P.pdf
Description:
IC REG CONV DDR 1OUT 8MSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,888

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Product details

Overview

MP20073DH-LF-P from Monolithic Power Systems is a 2A sink/source DDR memory termination regulator with integrated VTT and buffered VTTREF outputs, designed for DDR2/DDR3 systems requiring precise VDDQ/2 tracking (±30mV), Kelvin sensing (VTTSEN), and operation across 1.3V–6.0V VDDQ input range. It delivers fast transient response using only 20µF ceramic output capacitance and supports ACPI-compliant notebook memory supplies.

For engineers reviewing the MP20073DH-LF-P datasheet, MP20073DH-LF-P pinout, MP20073DH-LF-P application, or MP20073DH-LF-P equivalent, key selection criteria include VTT accuracy under load (±30mV at 2A), thermal shutdown threshold (150°C), soft-start timing (≤9µs), VDRV bias voltage requirement (3.3V), and MSOP-8EP package thermal resistance (θJA = 80°C/W).

Technical Context

The MP20073DH-LF-P implements a linear LDO architecture with dual regulation paths: one for VTT (2A sink/source) and another for VTTREF (buffered VREF/2). Its control logic is powered by VDRV (3.3V), enabling independent startup sequencing from VDDQ via UVLO monitoring (0.9V to 1.3V threshold).

Kelvin sensing on VTTSEN ensures accurate remote voltage regulation at the DDR memory termination point, while internal current limiting (3A sink/source, reduced to 1A during deep undervoltage) and thermal shutdown (150°C trip, 125°C hysteresis) provide robust protection in high-transient DDR bus environments.

Key Specifications

Parameter Value and Actual Design Meaning
VDDQ Input Range 1.3V to 6.0V - Enables direct connection to DDR2/DDR3 VDDQ rails without external level-shifting.
VTT Output Accuracy ±30mV at 2A sink/source - Ensures DDR bus signal integrity within JEDEC-specified termination tolerance.
VTTREF Accuracy ±18mV (VREF=1.8V) - Maintains precise reference for DDR memory input comparators.
Output Capacitance 20µF ceramic (2×10µF) - Minimizes board area and eliminates need for high-ESR electrolytics.
Thermal Shutdown 150°C trip / 125°C recovery - Prevents permanent damage during sustained high-current DDR bursts.
Soft-Start Time ≤9µs max - Limits inrush current during power-up to avoid VDDQ rail collapse.
VDRV Supply 3.3V required - Powers internal bias circuitry independently of VDDQ for stable enable sequencing.

Pinout & Package

MP20073DH-LF-P is housed in an 8-pin MSOP with exposed thermal pad (MSOP-8EP), optimized for thermal performance in space-constrained DDR memory modules. The exposed pad must be soldered to PCB ground plane using ≥10 vias (0.3mm drill) for effective heat dissipation (θJC = 12°C/W).

Pin/Terminal Circuit Role Design Meaning
1 DDQ VDDQ input supply Primary power input for VTT LDO; connects directly to DDR memory VDDQ rail and requires local 10µF ceramic decoupling.
2 VTT VTT termination output 2A sink/source regulated output; routed to DDR memory termination network with Kelvin sense trace to VTTSEN.
3 GND / Exposed Pad Power and thermal ground Common return path for all currents; exposed pad must be connected to solid ground plane for thermal management.
4 VTTSEN Kelvin sense feedback Remote voltage sensing point; connects directly to VTT local bypass capacitor to eliminate PCB trace IR drop error.
5 VDRV Bias supply input 3.3V dedicated supply for internal control logic; decoupled with 1–4.7µF ceramic capacitor near pin.
6 REF VREF input Accepts DDR VREF (1.5V or 1.8V); internally divided to generate VTTREF = VREF/2.
7 EN Enable control Active-high logic input (VEN_H ≥1.4V); enables VTT regulator only after VDDQ exceeds UVLO threshold.
8 VTTREF Buffered VREF/2 output 10mA capable reference output for DDR memory input comparators; requires 1µF local bypass to analog ground.

Key Features

Feature Design Value
Integrated VTT + VTTREF Single-chip solution replaces discrete LDO + reference buffer, reducing BOM count and layout complexity in DDR2/3 modules.
Kelvin sensing (VTTSEN) Compensates for PCB trace resistance between VTT output and DDR termination point, ensuring ±30mV regulation accuracy at load.
VDDQ UVLO protection Shuts down VTT regulator when VDDQ falls below 0.9V (rising edge), preventing erroneous termination during power ramp-down.
3A current limiting Hard current limit protects internal pass FETs during short-circuit or overload; reduces to 1A if VTT drops below 33% target during fault.
Thermal shutdown with hysteresis 150°C shutdown and 125°C recovery prevents thermal runaway while allowing safe restart after cooling in high-density memory stacks.

Applications

DDR2 Notebook Memory Termination DDR3 Server DIMM Termination

Use Scenario: DDR2 memory subsystem in ultra-thin notebooks requiring low-profile, low-component-count termination.

IC Role / Device Role / Timing Role: Provides VTT (0.9V) and VTTREF (0.9V) with ±30mV accuracy while sourcing/sinking up to 2A transients.

Use Value: Eliminates need for external op-amp reference buffers and discrete MOSFETs, reducing PCB area by >40% versus discrete solutions.

Use Scenario: High-density DDR3 RDIMMs in enterprise servers where thermal management and transient response are critical.

IC Role / Device Role / Timing Role: Delivers stable VTT (0.75V) with Kelvin sensing to maintain signal integrity across 24+ memory chips per channel.

Use Value: 20µF ceramic output capacitance enables use of compact 0603/0805 MLCCs, improving reliability over tantalum alternatives.

ACPI-Compliant Memory Power Active Termination Bus Systems

Use Scenario: ACPI S3/S4 sleep-state memory retention in embedded industrial PCs with strict power budget constraints.

IC Role / Device Role / Timing Role: Maintains VTT regulation during low-power states using VDRV-biased control logic and <1µA shutdown current.

Use Value: VDDQ UVLO and EN-controlled sequencing ensure clean power-down without bus contention or data corruption.

Use Scenario: High-speed parallel bus termination in FPGA-based test equipment requiring dynamic impedance matching.

IC Role / Device Role / Timing Role: Acts as programmable active terminator with fast load transient response (<10µs settling) and bidirectional current capability.

Use Value: Sink/source symmetry and ±30mV accuracy support bidirectional signaling standards like RDRAM and proprietary high-speed interconnects.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR termination regulator applications.

Alternative Part Technical Difference Application Difference Selection Advice
TPS51200DRCT 3A sink-only (no source capability); requires external VREF/2 buffer; 12µF min output capacitance. Limited to DDR3 systems where source current is not required; lacks Kelvin sensing for remote regulation. Select when cost sensitivity outweighs need for bidirectional termination or precision remote sensing.
RT9046GSP 2A sink/source but no VTTREF output; ±50mV VTT accuracy; no VDRV bias rail - uses VDDQ for internal logic. Suitable for DDR2-only designs without buffered reference requirements; less suitable for DDR3 input comparator accuracy needs. Choose for simplified single-rail supply systems where VTTREF is generated externally or omitted.

Compared with TPS51200DRCT and RT9046GSP, MP20073DH-LF-P uniquely integrates both VTT and VTTREF with Kelvin sensing and ±30mV accuracy, enabling single-chip compliance with DDR3 JEDEC termination specs without external components or accuracy compromises.

Availability

MP20073DH-LF-P is available at Aetrix Electronics and suitable for DDR2/DDR3 notebook memory termination, server DIMM power delivery, and ACPI-compliant embedded memory subsystems requiring stable component supply and long-term lifecycle support.

Supply support for MP20073DH-LF-P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance analog and power ICs, with design centers in the US, China, and Taiwan, and global manufacturing partnerships.

The MP20073 belongs to MPS's DDR memory power management product line, engineered specifically for low-cost, high-density DDR2/DDR3 termination in space-constrained computing platforms where thermal efficiency and component count reduction are critical.

FAQ

What is the minimum VDDQ voltage required to enable MP20073DH-LF-P operation?

The MP20073DH-LF-P features a VDDQ undervoltage lockout (UVLO) with a rising-edge threshold of 0.9V and 55mV hysteresis. Operation begins only when VDDQ exceeds 0.9V and the EN pin is high; below this, the VTT regulator remains disabled regardless of EN state.

Can MP20073DH-LF-P operate with DDR4 VREF voltages?

No. MP20073DH-LF-P is specified for VREF inputs of 1.5V and 1.8V only, matching DDR2 and DDR3 standards. DDR4 uses 1.2V VREF, which falls outside its operational range and may cause VTTREF inaccuracy or functional failure.

How does the Kelvin sensing (VTTSEN) pin improve regulation accuracy?

VTTSEN provides remote feedback from the DDR memory termination node, eliminating voltage drop errors caused by PCB trace resistance between the MP20073DH-LF-P's VTT pin and the actual load. This ensures ±30mV regulation accuracy at the point of use, not just at the IC output.

Is VDRV required to be exactly 3.3V, or can it vary?

VDRV must be between 3.0V and 5.0V per datasheet specifications. However, optimal performance-including guaranteed soft-start timing and full current capability-is achieved at 3.3V. Operating at 5.0V increases internal power dissipation without functional benefit.

What thermal design practices are mandatory for reliable 2A continuous operation?

For sustained 2A operation, the exposed thermal pad must be soldered to a solid ground plane with ≥10 thermal vias (0.3mm drill), and the PCB should use 1oz or 2oz copper. Without this, junction temperature exceeds 150°C under worst-case (VDDQ=6.0V, VTT=0.75V) conditions, triggering thermal shutdown.

Does MP20073DH-LF-P support DDR3L (1.35V) VDDQ operation?

Yes. With a VDDQ range of 1.3V to 6.0V, MP20073DH-LF-P fully supports DDR3L operation at 1.35V. At this input, power dissipation is minimized during VTT sourcing (P = (VDDQ − VTT) × I), enhancing thermal margin in low-voltage memory systems.

What happens to VTTREF when VDDQ falls below UVLO threshold?

VTTREF remains active as long as VDDQ stays above the UVLO lower threshold (0.845V, due to 55mV hysteresis). It shuts down only when VDDQ drops below that level, ensuring stable reference during controlled power-down sequences before VTT regulation ceases.

MP20073DH-LF-P Specifications

Product attributes
Attribute value
Manufacturer:
Monolithic Power Systems Inc.
Series:
-
Package/Case:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Applications:
Converter, DDR
Voltage - Input:
1.3V ~ 6V
Number of Outputs:
1
Voltage - Output:
3.3V
Operating Temperature:
-40°C ~ 125°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-MSOP-EP

MP20073DH-LF-P FAQ

1.How can I place an order for MP20073DH-LF-P through Aetrix?

Please submit a Request for Quotation (RFQ) for MP20073DH-LF-P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MP20073DH-LF-P reliable?

The price and inventory of MP20073DH-LF-P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MP20073DH-LF-P is usually 5 days.

3.What payment methods are accepted for MP20073DH-LF-P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MP20073DH-LF-P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MP20073DH-LF-P?

MP20073DH-LF-P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MP20073DH-LF-P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MP20073DH-LF-P?

For technical support, including MP20073DH-LF-P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MP20073DH-LF-P requirements.

6.How does Aetrix verify that MP20073DH-LF-P is sourced from the original manufacturer or authorized distributors?

All MP20073DH-LF-P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MP20073DH-LF-P meets industry standards.

7.What is the process for return or replacement of MP20073DH-LF-P?

All MP20073DH-LF-P units undergo pre-shipment inspection (PSI). If there is an issue with MP20073DH-LF-P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MP20073DH-LF-P part is unused and in its original packaging.

Return procedure for MP20073DH-LF-P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MP20073DH-LF-P Tags

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