Monolithic Power Systems Inc. MP2007DH-LF-Z

Overview

MP2007DH-LF-Z from Monolithic Power Systems is a 3A sink/source DDR memory termination regulator with integrated VTT and buffered VTTREF outputs, designed for DDR2/DDR3 memory systems requiring precise VREF/2 tracking (±20mV), Kelvin sensing, and fast transient response using only 20µF ceramic output capacitance. It operates from 1.3V–6.0V VDDQ input and 4.5V–5.5V drive voltage in an 8-pin MSOP-EP package.

For engineers reviewing the MP2007DH-LF-Z datasheet, MP2007DH-LF-Z pinout, MP2007DH-LF-Z application, or MP2007DH-LF-Z equivalent, this device delivers accurate DDR termination with thermal shutdown, UVLO protection, soft-start, and ±20mV VTT/VTTREF accuracy - critical for ACPI-compliant notebook memory supplies and active termination busses.

Technical Context

The MP2007DH-LF-Z integrates a linear LDO-based VTT regulator with a precision resistive divider that tracks VREF to generate both VTT (sink/source) and VTTREF (buffered reference). Its control logic is powered by VDRV (4.5–5.5V), enabling operation only when both VDRV and VDDQ exceed their respective UVLO thresholds (4.1V and 0.9V).

Kelvin sensing via VTTSEN ensures regulation at the load point, while internal current limiting (3.5A sink/source, 1.0A under low-VOUT fault condition) and thermal shutdown at 150°C protect against overloads. The device supports fast transient response due to low-output-capacitance design (2×10µF ceramic) and built-in soft-start (7–9 µs max).

Key Specifications

Pinout & Package

The MP2007DH-LF-Z is housed in an 8-pin MSOP with exposed thermal pad (MSOP8E), optimized for thermal performance in space-constrained DDR memory modules. The exposed pad must be soldered to PCB ground plane with ≥10 vias (0.3mm drill) for effective heat dissipation (θJC = 12°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR memory termination regulator applications.

Compared with MP20075DN-LF-Z, the MP2007DH-LF-Z offers identical pinout and function but higher thermal resistance and older UVLO thresholds; versus TPS51200DRCT, it provides superior integration (VTTREF + Kelvin sense) at the cost of vendor-specific enable behavior and sourcing capability.

Availability

MP2007DH-LF-Z is available at Aetrix Electronics and suitable for notebook DDR2/DDR3 memory termination, ACPI-compliant memory subsystems, and active termination bus interfaces requiring stable component supply and long-term obsolescence support.

Supply support for MP2007DH-LF-Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance analog and power ICs, with core expertise in DC/DC conversion, LED drivers, and memory power management.

The MP2007 belongs to MPS's DDR memory power management product line, engineered specifically for low-cost, low-component-count DDR2/DDR3 termination in space-constrained portable computing platforms.

FAQ

What is the recommended input capacitance for MP2007DH-LF-Z?

A minimum 10µF ceramic capacitor must be placed between DDQ (pin 1) and GND (pin 3), located close to the IC. This input capacitor supplies transient current during VTT load steps. For optimal stability with larger output capacitance, increase input capacitance proportionally - typically ½ × total VTT output capacitance (e.g., 10µF for 20µF VTT output).

Can MP2007DH-LF-Z operate with DDR4 memory systems?

No - MP2007DH-LF-Z is specified for DDR2/DDR3 applications only. DDR4 requires VDDQ = 1.2V and tighter VTT accuracy (±15mV), while MP2007 supports VDDQ down to 1.3V and ±20mV VTT tolerance. Its UVLO threshold (0.9V) and VREF tracking range also do not meet DDR4 specifications. Use MP20075 or MP8765 for DDR4.

How does Kelvin sensing improve VTT regulation accuracy?

Kelvin sensing uses dedicated VTTSEN (pin 4) and GND (pin 3) connections routed directly to the VTT local bypass capacitor near the DDR memory chips. This eliminates voltage drop errors caused by PCB trace resistance between the IC output (pin 2) and load, ensuring regulation occurs precisely at the point of use - critical for maintaining DDR signal integrity under ±3A transient loads.

What happens when VDDQ falls below its UVLO threshold?

When VDDQ drops below 0.9V (typical), the MP2007DH-LF-Z disables the VTT regulator immediately, forcing VTT to float. VTTREF continues operating as long as VDRV remains above its 4.1V UVLO threshold. This prevents erroneous termination during memory power-down sequences and avoids bus contention during DDR self-refresh transitions.

Is the exposed thermal pad electrically connected to GND?

Yes - the exposed pad (pin 3) is internally connected to GND and must be soldered to the PCB ground plane. Thermal performance depends on this connection: ≥10 vias (0.3mm drill) are required beneath the pad to achieve θJC = 12°C/W. Failure to connect the pad degrades thermal resistance by >30°C/W and risks thermal shutdown under full 3A load.

Does MP2007DH-LF-Z support DDR3L (1.35V) operation?

Yes - MP2007DH-LF-Z supports VDDQ down to 1.3V, covering DDR3L's 1.35V nominal rail. Its VTT output tracks VREF/2 (e.g., 0.675V for DDR3L), and ±20mV accuracy meets DDR3L's VTT tolerance requirement (±2.96%). However, verify VREF source stability and ensure VDRV remains within 4.5–5.5V during all operating modes.

What is the purpose of the VDRV pin, and can it be tied to VDDQ?

VDRV (pin 5) supplies internal bias circuitry and must be 4.5–5.5V - it cannot be tied to VDDQ if VDDQ < 4.5V (e.g., DDR3L at 1.35V). A separate 5V rail or LDO is required. VDRV enables startup sequencing: both VDRV > 4.1V and VDDQ > 0.9V must be satisfied before VTT/VTTREF activate, preventing premature regulation during power ramp.