Monolithic Power Systems Inc. MP2676EG-LF-Z

Overview

MP2676EG-LF-Z from Monolithic Power Systems is a Li-ion charger protection IC with integrated P-channel MOSFET and body-diode reverse protection, designed to replace external blocking diodes and discrete P-MOSFETs in portable PMIC-based charging systems. It provides input over-voltage (6.0 V), input over-current (1.6 A), battery over-voltage (4.35 V), and thermal shutdown (140 °C) protection with 1 µs OVP response and 200 µs BOVP blanking time for smartphones and digital cameras.

For engineers reviewing the MP2676EG-LF-Z datasheet, MP2676EG-LF-Z pinout, MP2676EG-LF-Z application, or MP2676EG-LF-Z equivalent, this page delivers verified protection thresholds, validated QFN-8 (2 mm × 2 mm) package mapping, confirmed internal N-MOSFET control logic, and real-world timing behavior under transient conditions - all critical for safe Li-ion charge path design.

Technical Context

The MP2676EG-LF-Z implements three independent protection comparators (CP1–CP3) with dedicated blanking timers (10 ms for POR, 180 µs for OCP, 200 µs for BOVP) to suppress false triggering during hot-plug transients and voltage spikes. Its control logic disables the internal N-channel MOSFET within 1 µs of OVP detection and enforces permanent latch-off after 16 cumulative BOVP or OCP events unless power-cycled.

Thermal protection uses on-die temperature sensing with 140 °C trip and 120 °C hysteresis, while the integrated P-MOSFET is externally controlled via GATDRV to enable/disable CC/CV charging modes. The VBAT pin monitors battery voltage through an external isolation resistor (RVB = 200 kΩ typical) to prevent fault-induced backfeed.

Key Specifications

Pinout & Package

MP2676EG-LF-Z is housed in a thermally enhanced QFN-8 package (2 mm × 2 mm, 0.5 mm pitch) with exposed paddle for PCB-level heat dissipation. Pin numbering follows standard top-view orientation with Pin 1 marked by corner chamfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Li-ion charger protection applications.

Compared with TPS259211DRCR and BQ24314DSGR, MP2676EG-LF-Z uniquely integrates both P-MOSFET and N-MOSFET control with coordinated BOVP/OVP/OCP/OTP - enabling single-chip protection without external diodes or secondary voltage monitors, critical for ultra-thin mobile designs.

Availability

MP2676EG-LF-Z is available at Aetrix Electronics and suitable for smartphones, digital cameras, MP3 players, and PDAs requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging for global consumer electronics manufacturing.

Supply support for MP2676EG-LF-Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance analog and mixed-signal ICs for power management, motion control, and automotive applications.

The MP2676 belongs to MPS's battery protection product line, engineered specifically for space-constrained portable devices needing integrated, fast-response protection against input surges, overcurrent, overvoltage, and thermal faults in Li-ion charging paths.

FAQ

What is the purpose of the RVB resistor between VBAT and battery positive?

The RVB resistor (typically 200 kΩ) limits fault current from the VBAT pin to the battery if the IC fails shorted. It trades off worst-case leakage-induced BOVP threshold error (±4 mV at 200 kΩ) against safety margin - values above 1 MΩ increase error beyond acceptable 20 mV but reduce fault current to <30 µA.

How does GATDRV control the integrated P-MOSFET?

GATDRV is a logic-level input: connecting it to GND pulls the P-MOSFET gate low relative to its source (ACIN), turning it ON for forward charging; connecting it to CHRIN pulls gate to ACIN potential, turning it OFF to block reverse current. This enables PMIC-driven charge sequencing without external drivers.

Why does MP2676EG-LF-Z use an N-channel MOSFET for main switching instead of P-channel?

The internal N-MOSFET provides lower R_ON (450 mΩ) than an equivalently sized P-MOSFET would achieve, minimizing conduction loss and self-heating in the thermally constrained QFN-8 package. Its source is tied to ACIN, allowing simple gate drive from internal charge pump.

What happens after 16 BOVP or OCP events?

Both BOVP and OCP include 4-bit binary counters. After 16 occurrences, the internal N-MOSFET latches OFF permanently until ACIN power is fully removed and reapplied - a hardware reset that prevents uncontrolled cycling during persistent faults like shorted batteries or failed adapters.

Is the 1 µs OVP response time measured from threshold crossing or from event onset?

The 1 µs propagation delay is measured from the moment ACIN voltage crosses the 6.0 V OVP threshold to the time the N-MOSFET gate drive is disabled. It includes comparator decision time and driver stage delay, verified under fast-rising 20 V/µs input steps per datasheet Figure 12.

Can MP2676EG-LF-Z be used with 2-cell Li-ion packs?

No - the BOVP threshold is fixed at 4.35 V and not adjustable. It is designed exclusively for single-cell Li-ion (4.2 V nominal) applications. Using it with 2-cell (8.4 V) packs would result in immediate, irreversible latch-off due to continuous BOVP violation.

Does the thermal shutdown feature affect the GATDRV-controlled P-MOSFET?

No - thermal shutdown only disables the internal N-MOSFET between ACIN and OUT. The P-MOSFET remains under direct GATDRV control, allowing external logic to maintain reverse-blocking functionality even during die overheating events.