Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Monolithic Power Systems Inc. MP3352DQ-LF-P

Part No.:
MP3352DQ-LF-P
Manufacturer:
Monolithic Power Systems Inc.
Category:
LED Drivers
Package:
16-VFQFN Exposed Pad
Datasheet:
AetrixMP3352DQ-LF-P.pdf
Description:
IC LED DRIVER RGLTR 16QFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,153

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MP3352DQ-LF-P from Monolithic Power Systems is a 60V, 2.5A integrated photo-flash charger IC with built-in IGBT driver and quench control for xenon flash systems. It delivers precision charging via critical conduction mode flyback topology, features a 200mΩ internal power switch, 3% charge voltage accuracy (1.20V FB threshold), and supports 3–6V input. Used in compact camera modules where fast capacitor charging and accurate flash timing are required.

For engineers reviewing the MP3352DQ-LF-P datasheet, MP3352DQ-LF-P pinout, MP3352DQ-LF-P application, or MP3352DQ-LF-P equivalent, key selection criteria include peak current programmability (via ISET resistor), integrated IGBT gate drive capability (5Ω pull-up/pull-down), quench sensing interface (QSNS/QREF), RDYB open-drain ready signal, and QFN16-3mm×3mm thermal performance (θJA = 50°C/W).

Technical Context

The MP3352 operates in critical conduction mode (CRM) with peak current control set by external resistor on ISET pin, enabling precise energy delivery to flash capacitors up to 300V. Its internal 60V/200mΩ MOSFET switch minimizes conduction loss while allowing lower transformer turns ratio to reduce leakage-induced switching loss.

Integrated analog functions include a 1.20V FB comparator with ±24mV tolerance, DCM detection using 25mV offset, thermal shutdown at 150°C (15°C hysteresis), and quench control via QSNS/QREF differential sensing to terminate flash exposure based on phototransistor feedback - all implemented without external op-amps or timers.

Key Specifications

ParameterValue and Actual Design Meaning
VSW Max60V - Enables direct use with 300V flash capacitors via step-up transformer without external HV switch.
IPEAK Max2.5A - Programmable via ISET pin; sets primary-side energy per cycle for controlled charge time.
Charge Accuracy±3% - Achieved via 1.20V FB reference and low-bias-current input (±0.2µA), ensuring stable 300V output across line/load.
RDS(on)200mΩ - Reduces conduction loss in CRM flyback, improving efficiency especially at high peak currents.
IGBT Drive RON5Ω (pull-up & pull-down) - Provides sufficient gate slew rate (60ns rise, 70ns fall @ 6500pF) for reliable xenon tube triggering.
Quench Delay2µs - QSNS-to-IGBTOUT propagation ensures sub-microsecond response to light sensor signal for exposure control.
Shutdown Current1µA - Minimizes battery drain during standby in portable camera applications.

Pinout & Package

MP3352DQ-LF-P is housed in a thermally enhanced 16-pin QFN package (3mm × 3mm, exposed thermal pad), rated for –40°C to +85°C ambient operation. The exposed pad must be soldered to PCB ground plane for optimal thermal performance (θJC = 12°C/W).

Pin/TerminalCircuit RoleDesign Meaning
1 ISETPeak current programming inputSinks current proportional to desired IPEAK; 20kΩ yields 2.5A (IPEAK = 50kΩ/RSET).
2 GNDAnalog ground referenceMust connect directly to local analog ground plane; separate from PGND to avoid noise coupling into FB/QSNS paths.
3 QREFQuench reference voltage inputDefines flash termination threshold; differential comparison with QSNS enables adaptive exposure control.
4 QSNSQuench sense inputAccepts phototransistor output voltage; internal comparator triggers IGBT turn-off when QSNS > QREF + offset.
5 IGBTOUTIGBT gate drive outputPush-pull driver capable of sourcing/sinking ≥200mA; drives gate of FGR15N40A or similar 600V IGBT.
6 VINMain supply input (3–6V)Power source for internal logic, IGBT driver, and bias circuits; requires ≥20µF ceramic bypass to PGND.
7,8 PGNDPower ground returnHigh-current return path for SW node and IGBT driver; must be low-inductance connection to minimize switching noise.
9 CHARGEEnable/disable control inputActive-high TTL-compatible input; rising edge initiates charging cycle; low forces shutdown and disables SW/IGBTOUT.
10,11 NCNo connectNot internally bonded; must remain unconnected and unpopulated on PCB.
12,13 SWSwitch node (drain of internal MOSFET)Connects to primary winding of flyback transformer; handles 60V max and high di/dt during CRM switching.
14 IGBTINIGBT logic enable inputTTL-compatible input; high enables IGBT firing after capacitor charge completion; low disables IGBT regardless of RDYB state.
15 RDYBOpen-drain ready indicatorPulled low when FB ≥ 1.20V (i.e., flash capacitor charged); requires external pull-up for system-level status monitoring.
16 FBFeedback input for output voltage regulationCompares divided output voltage against 1.20V reference; ±24mV trip tolerance ensures ±3% overall charge accuracy.

Key Features

FeatureDesign Value
Integrated CRM flyback controller + 60V/200mΩ switchEliminates need for external HV MOSFET and associated gate driver, reducing BOM count and layout complexity in space-constrained camera modules.
Programmable 0.4–2.5A peak current via ISET resistorEnables tuning of charge time (e.g., ~400ms for 47µF @ 3.3V input) without changing transformer or control loop compensation.
Dual-function quench interface (QREF/QSNS)Supports closed-loop exposure control using phototransistor feedback, extending battery life by terminating flash precisely at desired brightness.
IGBT driver with matched 5Ω pull-up/pull-downEnsures clean gate transitions for fast, jitter-free xenon tube ignition - critical for consistent flash intensity and timing in optical film cameras.
RDYB open-drain status output with <0.2V low-level voltageProvides unambiguous system-level indication of full charge (FB ≥ 1.20V), enabling synchronized flash trigger sequencing in multi-camera or burst-mode applications.

Applications

Digital Still CamerasOptical Film Cameras

Use Scenario: Compact DSLR or mirrorless camera requiring rapid flash recharge between shots.

IC Role / Device Role / Timing Role: Primary flyback charger controller and IGBT gate driver for xenon flash capacitor (typically 100–220µF, 300V).

Use Value: 2.5A peak current capability achieves ≤350ms charge time for 100µF capacitor from 3.3V supply, enabling burst-mode photography.

Use Scenario: Mechanical film SLR with electronic flash synchronization and auto-exposure control.

IC Role / Device Role / Timing Role: Precision flash charger with quench-based exposure termination, interfacing to CdS cell or photodiode sensor.

Use Value: QSNS/QREF differential sensing provides ±5% exposure consistency across battery voltage decay (3–6V), preserving image density.

Mobile Phones With CameraPDAs With Camera

Use Scenario: Early smartphone with integrated xenon flash (pre-LED dominance), constrained by PCB area and battery capacity.

IC Role / Device Role / Timing Role: Single-chip solution integrating charger, IGBT driver, and quench logic to replace 3+ discrete ICs.

Use Value: QFN16-3mm×3mm package saves >25mm² vs. SOIC alternatives; 1µA shutdown current extends standby time between photo sessions.

Use Scenario: Handheld PDA with swappable camera module requiring low-power, field-upgradeable flash control.

IC Role / Device Role / Timing Role: Flash energy manager coordinating charge cycle initiation (CHARGE pin), readiness signaling (RDYB), and flash firing (IGBTIN).

Use Value: TTL-compatible CHARGE/IGBTIN inputs simplify interface to ARM9 or MIPS-based baseband processors without level-shifting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar xenon flash charger applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MAX8640Y40V max SW rating; no integrated IGBT driver; requires external MOSFET and discrete IGBT gate driver.Limited to ≤250V flash outputs; higher component count increases board area and EMI risk in portable designs.Select when lower cost outweighs integration benefit and flash voltage stays below 250V.
TPS65120Charges to 350V but lacks quench interface and IGBT driver; designed for LCD bias, not flash.Cannot perform exposure control or drive xenon tube directly; requires additional driver IC and sensor circuitry.Select only for non-flash high-voltage bias applications; not a functional substitute for MP3352DQ-LF-P.

Compared with MAX8640Y and TPS65120, MP3352DQ-LF-P uniquely integrates CRM control, 60V switch, IGBT driver, and quench sensing - enabling single-chip xenon flash systems with adaptive exposure, whereas alternatives require ≥3 extra components and lack timing-critical quench functionality.

Availability

MP3352DQ-LF-P is available at Aetrix Electronics and suitable for digital still cameras, optical film cameras, mobile phones with camera, and PDAs with camera requiring stable component supply, RoHS-compliant packaging, and long-term production continuity.

Supply support for MP3352DQ-LF-P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance analog and power ICs, founded in 1997 and headquartered in Kirkland, Washington.

The MP3352 belongs to MPS's photo-flash power management product line, engineered specifically for compact, battery-powered imaging devices requiring fast, accurate, and intelligent xenon flash charging with exposure control.

FAQ

What is the maximum flash capacitor voltage supported by MP3352DQ-LF-P?

The MP3352DQ-LF-P regulates output voltage via feedback divider to 300V in typical applications, enabled by its 60V SW pin rating and CRM flyback architecture. While the internal switch withstands 60V, the transformer steps this to 300V; exceeding 300V risks overvoltage on FB network resistors and may violate safety margins in certified camera designs.

How is peak charge current set, and what resistor value gives 2.5A?

Peak current is set by resistor RSET from ISET pin to GND using IPEAK = 50 kΩ / RSET(kΩ). For 2.5A, RSET = 20 kΩ (e.g., 20.0kΩ ±1%). The datasheet confirms 1.36–1.66A with 33.2kΩ and 0.4–0.6A with 100kΩ, validating the linear relationship and tolerance stack-up.

Does MP3352DQ-LF-P support automatic flash exposure control?

Yes - via its dedicated quench function using QREF and QSNS pins. When QSNS voltage (from phototransistor) exceeds QREF, the internal comparator disables IGBTOUT within 2µs, terminating flash exposure. This closed-loop method replaces mechanical shutters or fixed-timing circuits in optical film and DSLR cameras.

What is the purpose of the two PGND pins (pins 7 and 8)?

Pins 7 and 8 are paralleled power ground terminals for the high-current SW node and IGBT driver return path. They must be connected to a low-inductance, wide copper pour tied to the exposed thermal pad. Separating PGND from AGND (pin 2) prevents switching noise from corrupting FB, QSNS, and QREF analog measurements.

Can MP3352DQ-LF-P operate from a single-cell Li-ion battery?

Yes - its 3–6V VIN range covers discharged (3.0V) to fully charged (4.2V) single-cell Li-ion. The 2.7–2.9V UVLO ensures reliable startup above battery cutoff, and 50µA quiescent current during charge-complete state preserves runtime. Typical charge time for 47µF is ~400ms at 3.3V input.

Is RDYB an active-high or open-drain output, and how should it be used?

RDYB is an open-drain output that pulls low when FB ≥ 1.20V (flash capacitor charged). It requires an external pull-up resistor (e.g., 10kΩ to VIN) to generate a logic-high signal. System MCU reads RDYB to synchronize IGBTIN assertion and avoid premature flash firing before full charge.

What transformer specifications are recommended for 2.5A peak current?

MPS recommends transformers with 1:8 turns ratio, 6µH primary inductance, and ≥600V isolation - e.g., TOKYO Coil TTRN-038S or Wurth 750310448. These match the 300ns minimum off-time requirement and handle 2.5A peak without saturation, ensuring stable CRM operation and minimal audible noise.

MP3352DQ-LF-P Specifications

Product attributes
Attribute value
Manufacturer:
Monolithic Power Systems Inc.
Series:
-
Package/Case:
16-VFQFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
Type:
DC DC Regulator
Topology:
Flyback
Internal Switch(s):
Yes
Number of Outputs:
1
Voltage - Supply (Min):
3V
Voltage - Supply (Max):
6V
Voltage - Output:
60V
Current - Output / Channel:
-
Frequency:
-
Dimming:
-
Applications:
Camera Flash
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
16-QFN-3-EP

MP3352DQ-LF-P FAQ

1.How can I place an order for MP3352DQ-LF-P through Aetrix?

Please submit a Request for Quotation (RFQ) for MP3352DQ-LF-P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MP3352DQ-LF-P reliable?

The price and inventory of MP3352DQ-LF-P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MP3352DQ-LF-P is usually 5 days.

3.What payment methods are accepted for MP3352DQ-LF-P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MP3352DQ-LF-P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MP3352DQ-LF-P?

MP3352DQ-LF-P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MP3352DQ-LF-P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MP3352DQ-LF-P?

For technical support, including MP3352DQ-LF-P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MP3352DQ-LF-P requirements.

6.How does Aetrix verify that MP3352DQ-LF-P is sourced from the original manufacturer or authorized distributors?

All MP3352DQ-LF-P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MP3352DQ-LF-P meets industry standards.

7.What is the process for return or replacement of MP3352DQ-LF-P?

All MP3352DQ-LF-P units undergo pre-shipment inspection (PSI). If there is an issue with MP3352DQ-LF-P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MP3352DQ-LF-P part is unused and in its original packaging.

Return procedure for MP3352DQ-LF-P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MP3352DQ-LF-P Tags

  • MP3352DQ-LF-P
  • MP3352DQ-LF-P PDF
  • MP3352DQ-LF-P Datasheet
  • MP3352DQ-LF-P Specifications
  • MP3352DQ-LF-P Images
  • Monolithic Power Systems Inc.
  • Monolithic Power Systems Inc. MP3352DQ-LF-P
  • Buy MP3352DQ-LF-P
  • MP3352DQ-LF-P Price
  • MP3352DQ-LF-P Distributor
  • MP3352DQ-LF-P Supplier
  • MP3352DQ-LF-P Wholesale
Related Products
BCR402RE6327HTSA1
BCR402RE6327HTSA1

Infineon Technologies

BCR430UXTSA2
BCR430UXTSA2

Infineon Technologies

BCR420UE6433HTMA1
BCR420UE6433HTMA1

Infineon Technologies

BCR420UE6327HTSA1
BCR420UE6327HTSA1

Infineon Technologies

BCR421UE6327HTSA1
BCR421UE6327HTSA1

Infineon Technologies

LYT1604D-TL
LYT1604D-TL

Power Integrations

HV9910CLG-G
HV9910CLG-G

Microchip Technology

CL2N8-G
CL2N8-G

Microchip Technology

BCR420UW6-7
BCR420UW6-7

Diodes Incorporated

BCR421UW6-7
BCR421UW6-7

Diodes Incorporated

BCR420UFD-7
BCR420UFD-7

Diodes Incorporated

BCR421UFD-7
BCR421UFD-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER