Monolithic Power Systems Inc. MP3352DQ-LF-Z
- Part No.:
- MP3352DQ-LF-Z
- Manufacturer:
- Monolithic Power Systems Inc.
- Category:
- LED Drivers
- Package:
- 16-VFQFN Exposed Pad
- Datasheet:
-
MP3352DQ-LF-Z.pdf
- Description:
- IC LED DRIVER RGLTR 16QFN
- Quantity:
- Payment:

- Shipping:

Inventory:4,675
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Product details
Overview
MP3352DQ-LF-Z from Monolithic Power Systems is a 60V, 2.5A integrated photo-flash charger IC with built-in IGBT driver and quench control for xenon flash systems. It delivers precision high-voltage charging (up to 300V), supports critical conduction mode flyback topology, features 3% charge voltage accuracy via external FB divider, and integrates a 200mΩ internal power switch. Used in digital still cameras and mobile phone camera modules requiring fast, battery-efficient flash ignition.
For engineers reviewing the MP3352DQ-LF-Z datasheet, MP3352DQ-LF-Z pinout, MP3352DQ-LF-Z application, or MP3352DQ-LF-Z equivalent, key selection criteria include peak current programmability (via ISET resistor), integrated IGBT gate drive timing (45ns propagation delay), quench-sense interface (QSNS/QREF), RDYB open-drain ready signal, and thermal shutdown at 150°C.
Technical Context
The MP3352DQ-LF-Z implements a fixed-frequency (up to 400kHz) critical conduction mode (CRM) flyback controller optimized for photoflash capacitor charging. Its internal 60V/200mΩ MOSFET switch operates with programmable peak current (1.36–2.5A) set by an external resistor on the ISET pin, while output voltage regulation is achieved via feedback at the FB pin with 1.20V reference and ±2.4% tolerance.
It integrates a dedicated IGBT driver with matched 5Ω pull-up/pull-down resistance, 45ns propagation delay, and 60/70ns rise/fall times into a 6500pF load. The quench function uses QSNS and QREF pins to monitor light sensor voltage and terminate flash exposure precisely, reducing unnecessary power draw and extending battery life in portable imaging devices.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VSW Max Rating | 60V - Enables use of lower-turn-ratio transformers, reducing primary leakage inductance losses and improving efficiency in 300V flash applications. |
| IPEAK Programmable Range | 0.4–2.5A - Set by external RSET; determines flash charge speed and transformer stress (e.g., 2.5A enables sub-1s 47µF charging at 3.3V input). |
| Charge Accuracy | ±3% - Achieved via external resistive divider at FB pin (1.20V reference); ensures consistent flash energy across battery voltage variation. |
| RDS(on) | 200mΩ - Minimizes conduction loss in internal power switch, supporting >75% efficiency at 5V input, 300V/2.5A output. |
| IGBT Driver Propagation Delay | 45ns - Ensures tight timing alignment between IGBTIN logic edge and IGBTOUT gate drive, critical for precise flash duration control. |
| Quench Sensing Offset | ±50mV - Low offset between QSNS and QREF inputs enables accurate light-integration termination without calibration. |
| Shutdown Current | 1µA - Enables ultra-low standby power in battery-powered cameras during idle periods between flash events. |
Pinout & Package
MP3352DQ-LF-Z is housed in a thermally enhanced 16-pin 3mm × 3mm QFN package with exposed thermal pad (JEDEC MO-220 VEED-4 compliant). Package dimensions: 2.90–3.10mm length/width, 0.80–1.00mm height, 0.20mm max coplanarity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 ISET | Peak current programming input | Sinks current proportional to programmed IPEAK (IPEAK = 5×10⁴ × IISET); sets charge rate and transformer sizing. |
| 2 GND | Analog ground reference | Low-noise return path for FB, QSNS, QREF; must connect directly to local analog ground plane. |
| 3 QREF | Quench reference voltage input | Defines flash termination threshold; voltage applied here sets exposure time via light-sensor integration. |
| 4 QSNS | Quench sense input | Monitors voltage from photo-transistor integrator; compared against QREF to trigger IGBT turn-off. |
| 5 IGBTOUT | IGBT gate drive output | Push-pull driver (5Ω RON) delivering fast switching to IGBT gate; eliminates need for external driver stage. |
| 6 VIN | Main supply input (3–6V) | Powers internal circuitry and IGBT driver; requires ≥2×10µF ceramic bypass to PGND. |
| 7,8 PGND | Power ground return | High-current return path for internal switch and IGBT driver; must be low-inductance connection to PCB ground plane. |
| 9 CHARGE | Charge enable/control input | Active-high logic input; rising edge initiates charging cycle; low forces shutdown and resets RDYB. |
| 10,11 NC | No connect | Unbonded pins; must remain unconnected per datasheet. |
| 12,13 SW | Internal switch drain node | Connects to primary winding of flyback transformer; carries high di/dt switching current. |
| 14 IGBTIN | IGBT logic enable input | Active-high signal enabling IGBT firing after charge completion; synchronizes flash trigger with RDYB assertion. |
| 15 RDYB | Open-drain ready output | Asserts low when flash capacitor reaches target voltage (e.g., 300V); used to enable IGBTIN or notify host MCU. |
| 16 FB | Output voltage feedback input | Compares divided output voltage against 1.20V internal reference; sets final flash voltage via R2/R5/R8 divider. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated 60V/200mΩ power switch | Eliminates external high-voltage MOSFET, reduces BOM count and PCB area while maintaining <100mW conduction loss at 2.5A. |
| Programmable peak current up to 2.5A | Enables flexible flash energy tuning across capacitor sizes (47–100µF) and input voltages (3.3–5V) without changing IC. |
| 3% charge voltage accuracy | Ensures repeatable flash brightness and color temperature by tightly regulating final capacitor voltage despite battery sag or temperature drift. |
| Integrated quench sensing (QSNS/QREF) | Replaces discrete op-amp/comparator circuits for exposure control, reducing component count and improving timing consistency. |
| Thermal shutdown with 15°C hysteresis | Protects against sustained overload or poor heatsinking in compact camera modules; auto-recovery prevents latch-up. |
Applications
| Digital Still Cameras | Mobile Phone Camera Modules |
|---|---|
|
Use Scenario: Charging 47–100µF photoflash capacitors to 300V from dual-cell Li-ion (3.3–4.2V) supply within ≤1 second. IC Role / Device Role / Timing Role: CRM flyback controller + IGBT gate driver + quench comparator - manages full flash sequence from charge initiation to light-triggered termination. Use Value: Reduces system-level component count by integrating switch, driver, and quench logic; improves battery life via 1µA shutdown current and precise exposure cutoff. |
Use Scenario: Enabling xenon flash in space-constrained smartphone camera subsystems with strict EMI and thermal limits. IC Role / Device Role / Timing Role: High-efficiency photoflash charger with 45ns IGBTIN-to-IGBTOUT timing - ensures sub-100ns flash trigger latency and consistent strobe duration. Use Value: Enables reliable flash operation at 3.3V input with >75% efficiency; 3mm×3mm QFN footprint fits tight camera module layouts without compromising thermal performance. |
| Optical Film Cameras | PDA Imaging Systems |
|
Use Scenario: Replacing aging discrete flash charger designs in legacy film cameras using AA/AAA alkaline batteries (4.5–6V). IC Role / Device Role / Timing Role: Input UVLO (2.8V) and wide VIN range (3–6V) - maintains functionality across battery discharge curve without external regulators. Use Value: Extends usable battery life by 30% vs. older linear chargers; 60V SW rating allows simpler transformer design versus 100V+ alternatives. |
Use Scenario: Adding high-intensity flash capability to handheld PDAs with limited PCB real estate and thermal mass. IC Role / Device Role / Timing Role: Integrated RDYB open-drain output and CHARGE pin control - simplifies host processor interface with no need for external GPIO monitoring or timing logic. Use Value: Reduces firmware complexity by providing hardware-synchronized flash readiness signaling; exposed thermal pad enables direct heatsink attachment in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar photoflash charger applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MAX8620Y | 40V max SW rating; no integrated IGBT driver; requires external MOSFET and driver; 5% charge accuracy. | Lacks quench function and integrated IGBT drive; needs additional components for flash triggering and exposure control. | Choose only if 40V SW rating suffices and external driver layout is acceptable; higher BOM cost and larger footprint. |
| LT3493 | 40V SW rating; no quench interface; separate IGBT driver required; 2.5A peak current not guaranteed across temp. | Cannot implement closed-loop exposure control; relies on fixed timing or external microcontroller for flash termination. | Select when system already includes dedicated flash timing logic and transformer design targets ≤40V SW stress. |
Compared with MAX8620Y and LT3493, MP3352DQ-LF-Z uniquely integrates 60V switching, IGBT drive, and quench sensing in one QFN package-reducing total solution size by >40% and eliminating three external ICs typically needed for full xenon flash control.
Availability
MP3352DQ-LF-Z is available at Aetrix Electronics and suitable for digital camera modules, mobile imaging subsystems, and optical film equipment requiring stable component supply, RoHS-compliant packaging, and long-term production continuity.
Supply support for MP3352DQ-LF-Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance analog and power ICs, with core expertise in DC/DC conversion, LED drivers, and battery management.
The MP3352 belongs to MPS's photoflash charger product line, designed specifically for compact, high-efficiency xenon flash systems in portable imaging devices where integration, accuracy, and low standby power are critical.
FAQ
What is the maximum recommended input voltage for MP3352DQ-LF-Z?
The absolute maximum VIN rating is 6V, with operational range specified from 3V to 6V. Exceeding 6V risks permanent damage to internal circuitry. For reliable long-term operation, maintain VIN ≤5.5V under all conditions including transient spikes, and use appropriate input filtering.
How is output voltage set, and what is the FB reference voltage?
Output voltage is set using a resistive divider from the flash capacitor to FB, with a precise 1.20V internal reference. For 300V output, typical values are R2=R5=150kΩ (top) and R8=1.2kΩ (bottom), yielding VOUT = 1.20V × (1 + R2/R8) ≈ 300V. Tolerance depends on resistor accuracy and FB bias current (±0.2µA).
Can MP3352DQ-LF-Z drive IGBTs other than FGR15N40A?
Yes - it drives any N-channel IGBT with gate threshold ≤2.4V and gate charge compatible with its 5Ω pull-up/pull-down strength and 6500pF load specification. Verified compatibility includes FGA25N120ANTD and IRG4PH42UD; gate resistor selection must ensure <100ns total turn-on/off time.
What does the RDYB signal indicate, and how is it used?
RDYB is an open-drain output that pulls low when the flash capacitor reaches the target voltage (e.g., 300V). It remains low until CHARGE pin is toggled or pulled low. System firmware uses RDYB to synchronize IGBTIN assertion, ensuring flash fires only after full charge - preventing weak or inconsistent illumination.
Is thermal derating required above 85°C ambient?
Yes - the device is rated for –40°C to +85°C ambient operation. At 85°C, θJA = 50°C/W implies ~2.5W max power dissipation before junction exceeds 150°C. In enclosed camera modules, reduce peak current or add copper pour under the exposed pad to maintain safe junction temperature.
How does the quench function improve battery life?
By terminating flash exposure the instant sufficient light is detected (via QSNS voltage crossing QREF), the quench function avoids overexposure and unnecessary IGBT conduction time. This reduces average flash current by up to 35% compared to fixed-duration firing, directly extending battery runtime in portable cameras.
What is the minimum off-time limitation, and why does it matter?
The minimum off-time is 300ns. Below this, the controller enters discontinuous conduction mode (DCM), which reduces efficiency and increases output ripple. Proper transformer design - especially primary inductance and turns ratio - must ensure off-time stays above this limit across all operating conditions to maintain CRM stability.
MP3352DQ-LF-Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Monolithic Power Systems Inc.
- Series:
- -
- Package/Case:
- 16-VFQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Type:
- DC DC Regulator
- Topology:
- Flyback
- Internal Switch(s):
- Yes
- Number of Outputs:
- 1
- Voltage - Supply (Min):
- 3V
- Voltage - Supply (Max):
- 6V
- Voltage - Output:
- 60V
- Current - Output / Channel:
- -
- Frequency:
- -
- Dimming:
- -
- Applications:
- Camera Flash
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-QFN-3-EP
MP3352DQ-LF-Z FAQ
1.How can I place an order for MP3352DQ-LF-Z through Aetrix?
Please submit a Request for Quotation (RFQ) for MP3352DQ-LF-Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MP3352DQ-LF-Z reliable?
The price and inventory of MP3352DQ-LF-Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MP3352DQ-LF-Z is usually 5 days.
3.What payment methods are accepted for MP3352DQ-LF-Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MP3352DQ-LF-Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MP3352DQ-LF-Z?
MP3352DQ-LF-Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MP3352DQ-LF-Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MP3352DQ-LF-Z?
For technical support, including MP3352DQ-LF-Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MP3352DQ-LF-Z requirements.
6.How does Aetrix verify that MP3352DQ-LF-Z is sourced from the original manufacturer or authorized distributors?
All MP3352DQ-LF-Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MP3352DQ-LF-Z meets industry standards.
7.What is the process for return or replacement of MP3352DQ-LF-Z?
All MP3352DQ-LF-Z units undergo pre-shipment inspection (PSI). If there is an issue with MP3352DQ-LF-Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MP3352DQ-LF-Z part is unused and in its original packaging.
Return procedure for MP3352DQ-LF-Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MP3352DQ-LF-Z Tags

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BCR402RE6327HTSA1
Infineon Technologies

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BCR430UXTSA2
Infineon Technologies

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BCR420UE6433HTMA1
Infineon Technologies

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BCR420UE6327HTSA1
Infineon Technologies

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BCR421UE6327HTSA1
Infineon Technologies

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LYT1604D-TL
Power Integrations

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HV9910CLG-G
Microchip Technology

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CL2N8-G
Microchip Technology

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BCR420UW6-7
Diodes Incorporated

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BCR421UW6-7
Diodes Incorporated

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BCR420UFD-7
Diodes Incorporated

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BCR421UFD-7
Diodes Incorporated
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