Monolithic Power Systems Inc. MP5026GLRT-P

Overview

MP5026GLRT-P from Monolithic Power Systems is a hot-swap Intelli-Fuse IC that integrates a 2.8mΩ R_DS(ON) power MOSFET, current mirror, die temperature sensor, and 3.3V LDO to protect backplane-powered circuit cards. It delivers up to 20A continuous output current at room temperature, limits inrush current via configurable soft-start, and provides ±1% IMON current monitoring accuracy for real-time load diagnostics in server and networking infrastructure.

For engineers reviewing the MP5026GLRT-P datasheet, MP5026GLRT-P pinout, MP5026GLRT-P application, or MP5026GLRT-P equivalent, this device supports precise over-current limit configuration via ISET resistor, programmable insertion delay and fault timeout via TIMER/ENTM capacitors, latch-off protection mode, and integrated MOSFET health detection - all critical for high-reliability hot-swap system design.

Technical Context

The MP5026 implements a sense-MOSFET-based current-limit architecture with gate-voltage regulation during over-current events, enabling constant-current limiting independent of input voltage. Its dual-stage protection includes fast short-circuit response (200ns) and thermal shutdown at 148°C, with fault latching triggered only after configurable OCP timeout (e.g., 0.3ms with 10nF TIMER capacitor).

Control logic integrates EN/UV and LOADEN with blanking timing: EN/UV enables startup after insertion delay, while LOADEN must remain asserted post-blanking to sustain conduction. The internal 24μA charge pump drives the MOSFET gate, and VOUT slew rate is directly controlled by SS capacitor charging, decoupled from VIN variations.

Key Specifications

Pinout & Package

LGA-26 (4mm × 4mm) package with exposed thermal pad for enhanced heat dissipation in high-current applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar hot-swap protection applications.

Compared with TPS25982LMLR and LT4236IMS#PBF, MP5026GLRT-P uniquely combines 20A capability, ±1% IMON accuracy, integrated 3.3V LDO, and MOSFET health detection in a 4mm×4mm LGA - making it optimal for space-constrained, telemetry-enabled 12V server and networking hot-swap designs requiring zero-calibration current monitoring.

Availability

MP5026GLRT-P is available at Aetrix Electronics and suitable for server backplane protection, network line card hot-swap, and enterprise disk drive power management requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for MP5026GLRT-P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-efficiency power management ICs, with core expertise in DC-DC conversion, hot-swap controllers, and integrated power stages.

The MP5026 belongs to MPS's Intelli-Fuse product line, engineered specifically for high-reliability hot-swap applications in data centers and telecom infrastructure where precise current limiting, fault telemetry, and compact integration are mandatory.

FAQ

What is the minimum recommended ISET resistor value for 20A current limiting?

The MP5026GLRT-P achieves 20A current limit with a 12kΩ resistor from ISET to ground, per I_LIMIT = 0.3V / R_ISET. Using 12kΩ yields 25A nominal limit, but the device clamps to 20A during start-up and normal operation if configured above that threshold. Lower values increase current limit but reduce resolution and may exceed SOA under fault conditions.

How does the LOADEN blanking time affect system startup behavior?

During LOADEN blanking (set by ENTM capacitor), the device ignores LOADEN de-assertion and remains on if EN/UV is high. This prevents premature shutdown during inrush or transient events. After blanking expires, both EN/UV and LOADEN must be high to maintain conduction - enforcing intentional, sequenced power enable in multi-rail systems.

Can the MP5026GLRT-P operate with a 3.3V input supply?

Yes - the MP5026GLRT-P supports VIN down to 2.7V. At 3.3V input, it delivers up to 20A with R_DS(ON) of 2.8mΩ (typical), and all protections including OCP, SCP, and OTP remain fully functional. The internal 3.3V LDO operates independently, maintaining stable gate drive and logic supply regardless of VIN variation.

What is the purpose of the OV pin, and how is its threshold configured?

The OV pin disables the internal MOSFET when pulled high, or sets over-voltage protection threshold via resistor divider from VIN to GND. Threshold is 1.21V at the pin; for example, a 100kΩ–20kΩ divider from 12V sets OVP at 12V × (20k/(100k+20k)) = 2V at VIN. This enables precise, adjustable rail overvoltage cutoff without external comparators.

Does the MP5026GLRT-P require external components for basic hot-swap functionality?

Yes - minimal external components include: ISET resistor (sets current limit), TIMER capacitor (sets insertion delay and OCP timeout), SS capacitor (sets soft-start time), ENTM capacitor (sets LOADEN blanking), and decoupling capacitors on VCC and VIN/VOUT. No external MOSFET, current-sense resistor, or temperature sensor is needed due to full integration.

How is the IMON output calibrated, and what load is required on the IMON pin?

IMON provides 20μA/A output current; a resistor to ground (e.g., 2kΩ) converts this to 40mV/A. A ≥10nF capacitor must be placed in parallel with the resistor to filter noise and stabilize the output. No active calibration is needed - gain error is guaranteed ±1% across temperature and process variation.

What thermal derating applies above 25°C ambient temperature?

With θ_JA = 30.5°C/W on a 4-layer PCB, the MP5026GLRT-P dissipates up to 4.09W at 25°C. At 70°C ambient, maximum allowable power drops to (150°C − 70°C) / 30.5°C/W = 2.62W. For 20A operation, this corresponds to R_DS(ON) ≤ 6.55mΩ - well within the 3.8mΩ max at 125°C junction, confirming safe operation up to T_J = 125°C.