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Monolithic Power Systems Inc. MP5611GQT-P

Part No.:
MP5611GQT-P
Manufacturer:
Monolithic Power Systems Inc.
Category:
Special Purpose Regulators
Package:
16-PowerWFQFN
Datasheet:
AetrixMP5611GQT-P.pdf
Description:
2.9V-5V INPUT, TRIPLE OUTPUT AMO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,485

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Product details

Overview

MP5611GQT-P from Monolithic Power Systems is a triple-output AMOLED display power supply IC integrating a boost converter for ELVDD (4.6V/500mA), an inverting buck-boost (IBB) for ELVSS (−4V/500mA), and a second boost for AVDD (5.8V/100mA), operating from 2.9V to 5.2V input. It features one-wire digital control via CTRL pin, independent AVDD/ELVDD enable (EN_AVDD/CTRL), fast discharge (FD), and comprehensive protection including OCP, short-to-GND, and thermal shutdown. Used in compact AMOLED smartphone displays.

For engineers reviewing the MP5611GQT-P datasheet, MP5611GQT-P pinout, MP5611GQT-P application, or MP5611GQT-P equivalent, key selection considerations include configurable negative/positive output voltages, integrated synchronous rectification, TQFN-16 (3mm×3mm) package constraints, startup sequencing control, and ELVSS transition time tuning via CT capacitor.

Technical Context

The MP5611GQT-P implements three independent switching regulators on a single die: ELVDD and AVDD use synchronous boost topologies with dedicated high-side/low-side MOSFETs (RON_HS_ELVDD = 320 mΩ, RON_HS_AVDD = 1400 mΩ), while ELVSS uses an inverting buck-boost (IBB) with 1.7 MHz switching frequency and configurable transition time via external CT capacitor. All outputs support digital voltage programming via pulse-counting on the CTRL pin.

Protection architecture includes cycle-by-cycle current limiting per channel, output-specific OCP thresholds (ELVDD: 80–650 mA; AVDD: 90–270 mA), start-up and operational short detection (e.g., ELVSS >250 mV triggers ELVDD/ELVSS shutdown), and thermal shutdown at 150°C with 25°C hysteresis. The FD pin enables active discharge of all outputs upon disable.

Key Specifications

ParameterValue and Actual Design Meaning
Input Voltage Range2.9V to 5.2V - supports single-cell Li-ion battery input without pre-regulation
ELVDD Output4.6V (default), adjustable 4.6–5.2V, 500mA - powers AMOLED pixel anode with ±0.8% regulation over temperature
ELVSS Output−4V (default), adjustable −1.4V to −6.4V, 500mA - supplies cathode bias with 1.5%/A load regulation
AVDD Output5.8V (default), adjustable 5V to 7.7V, 100mA - drives source driver ICs with 0.08%/A load regulation
Switching FrequenciesfSW1 (ELVDD) = 1.35 MHz; fSW2 (ELVSS) = 1.7 MHz; fSW3 (AVDD) = 1.35 MHz - enables compact 4.7µH/10µH inductor selection
Digital Control InterfaceSingle-wire CTRL pin - configures all three outputs and OCP thresholds via pulse counting (e.g., 25 pulses = −4V ELVSS)
PackageTQFN-16 (3mm × 3mm) - thermally enhanced exposed pad tied to AGND for 60°C/W θJA

Pinout & Package

TQFN-16 (3mm × 3mm) package with exposed thermal pad connected to AGND. Pin 1 marked by dot; pin numbering clockwise from top-left corner in top view.

Pin/TerminalCircuit RoleDesign Meaning
SW1ELVDD boost switching nodeConnects to inductor L1 and internal HS/LS FETs; requires low-inductance layout to minimize EMI
PGND1ELVDD power groundSeparate ground return for ELVDD loop to avoid noise coupling into analog circuits
ELVDDPositive output (anode supply)Regulated 4.6V output; FB pin senses here or at remote cap for improved accuracy
FBELVDD feedback inputSenses output voltage; floating or grounded → direct sensing; ≤250mV drop → remote sensing mode
FDFast discharge enablePull high to activate active discharge of ELVDD/ELVSS/AVDD during shutdown
CTELVSS transition time controlExternal capacitor sets voltage ramp time: t(µs) ≈ 3 × 300kΩ × C(nF)
AGNDAnalog ground referenceReference for CTRL, FB, CT; must be star-connected to exposed pad and PGNDs
EN_AVDDAVDD enable inputActive-high; independent control allows staggered startup with ELVDD/ELVSS
CTRLDigital interface & ELVDD/ELVSS enableConfigures all outputs/OCP via pulse count; rising edge enables ELVDD after 10ms delay enables ELVSS
ELVSSNegative output (cathode supply)−4V regulated output; short-to-GND protection triggers if voltage rises >600mV
SW2ELVSS IBB switching nodeHigh-frequency node for inverting buck-boost; requires tight loop with L2 and PVIN cap
PVINELVSS power inputDedicated input rail for ELVSS converter; decoupled separately from main VIN
AVDDSource driver supply5.8V output; OCP triggers at 210mA default; short protection activates at 90% of set voltage
PGND2AVDD power groundIsolated ground return for AVDD loop to prevent interference with ELVDD/ELVSS
SW3AVDD boost switching nodeConnects to L3; higher RON_HS_AVDD (1400 mΩ) necessitates careful thermal design
AVINInternal circuit supplyBias rail for control logic; must be decoupled near pin with ≥1µF ceramic cap

Key Features

FeatureDesign Value
Triple-output topology integrationCombines ELVDD boost, ELVSS inverting buck-boost, and AVDD boost in one TQFN-16 die - eliminates discrete PMIC complexity and saves >30% PCB area
One-wire digital configurationCTRL pin programs all three output voltages and OCP thresholds via pulse counting - reduces BOM count vs. I²C/SPI interfaces and avoids level-shifter components
Independent startup sequencingEN_AVDD and CTRL pins allow AVDD to power up before or after ELVDD/ELVSS - prevents display latch-up during cold start in AMOLED panels
Active fast dischargeFD pin enables controlled discharge of all outputs within <10ms after shutdown - meets AMOLED panel safety requirements for rapid voltage collapse
Comprehensive short-circuit protectionDetects ELVDD-to-ELVSS, ELVSS-to-GND, and AVDD-to-GND faults with <1ms response - prevents catastrophic failure during panel manufacturing handling

Applications

Smartphone AMOLED Panel PowerWearable Display Bias Supply

Use Scenario: Powering 6.7-inch FHD+ AMOLED panel in flagship smartphone with dynamic brightness control and HDR content.

IC Role / Device Role / Timing Role: Generates precise ELVDD (4.6V), ELVSS (−4V), and AVDD (5.8V) rails synchronously; CTRL pin adjusts ELVSS in real-time for contrast optimization.

Use Value: Enables <1% output voltage drift across −40°C to +85°C, critical for consistent color gamut and black-level fidelity in outdoor viewing conditions.

Use Scenario: Supplying compact 1.3-inch circular AMOLED display in smartwatch with aggressive power cycling to extend battery life.

IC Role / Device Role / Timing Role: Provides sequenced AVDD→ELVDD→ELVSS startup via EN_AVDD/CTRL timing; FD pin discharges rails within 8ms during sleep mode entry.

Use Value: Reduces system standby current to <0.1μA (ISD) and eliminates display ghosting during rapid wake/sleep transitions.

Tablet AMOLED Touch Controller BiasAutomotive Instrument Cluster Display

Use Scenario: Delivering stable bias to touch-sensitive AMOLED display in 10.1-inch Android tablet with glove-mode operation.

IC Role / Device Role / Timing Role: Supplies ELVSS at −6.4V (max) for enhanced touch sensitivity margin; CT pin tuned for 120ms ELVSS ramp to avoid touch IC reset.

Use Value: Maintains <±30mV ELVSS regulation under 300mA load step, ensuring reliable capacitive sensing even during simultaneous display update and touch scan.

Use Scenario: Powering 12.3-inch digital instrument cluster in EV with ASIL-B functional safety requirements.

IC Role / Device Role / Timing Role: Generates redundant ELVDD/ELVSS rails with independent OCP (ELVDD: 650mA, ELVSS: 500mA); thermal shutdown at 150°C prevents thermal runaway in sealed enclosure.

Use Value: Achieves >92% peak efficiency at 200mA ELVDD load, reducing heat generation in confined dashboard space and extending display lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar AMOLED power supply applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
RTQ2136BGQWQuad-output (adds VGH); no IBB for ELVSS - uses dual boost + LDO for negative rail; lower max ELVSS current (300mA)Requires external inverter for deep negative bias; less suitable for high-current cathode drive in large panelsSelect when VGH rail is needed and ELVSS load <300mA; verify CT-equivalent timing control unavailable
TPS65136RGTRTriple-output with integrated charge pump for ELVSS; fixed 5.8V AVDD and 4.6V ELVDD; no digital voltage adjustmentLacks programmable ELVSS/AVDD; no CTRL-based sequencing - limits dynamic contrast tuning capabilityChoose for cost-sensitive designs where output voltages are static and fast discharge is not required

Compared with RTQ2136BGQW and TPS65136RGTR, MP5611GQT-P uniquely integrates an inverting buck-boost for high-current ELVSS with digitally programmable voltage and transition timing, enabling adaptive biasing for HDR AMOLED panels without external components.

Availability

MP5611GQT-P is available at Aetrix Electronics and suitable for AMOLED smartphone displays, wearable device panels, and automotive instrument clusters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for MP5611GQT-P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-efficiency power management ICs, with over 20 years of expertise in DC/DC conversion and display power solutions.

The MP5611 belongs to MPS's AMOLED Display Power Supply product line, engineered specifically for compact, high-reliability bias generation in mobile and automotive displays requiring precise multi-rail sequencing and programmable negative voltage outputs.

FAQ

What is the function of the CT pin on MP5611GQT-P?

The CT pin configures ELVSS output voltage transition time using an external capacitor. Its internal 300kΩ resistor forms an RC network where t(µs) ≈ 3 × 300kΩ × C(nF); a 100nF capacitor yields ~90ms ramp time. This prevents display artifacts during power-up by controlling ELVSS slew rate independently of ELVDD/AVDD.

How does the MP5611GQT-P handle ELVDD and ELVSS short-circuit protection?

It detects ELVDD-to-ELVSS shorts by monitoring ELVSS voltage: if ELVSS exceeds 250mV within 10ms of CTRL assertion, ELVDD and ELVSS shut down while AVDD remains active. During operation, ELVSS short-to-GND triggers shutdown if voltage rises >600mV for 1ms, preventing damage to OLED pixels.

Can the MP5611GQT-P operate with input voltage close to ELVDD output voltage?

Yes - when VIN ≈ ELVDD (e.g., 4.3–4.5V), it enters diode mode: the high-side MOSFET is disabled and its body diode acts as a rectifier. Proper output regulation requires continuous conduction mode (CCM), verified by inductor current waveform observation in application testing.

What is the role of the FD pin during shutdown?

Pulling FD high enables active discharge of ELVDD, ELVSS, and AVDD through internal 30–150Ω resistors (RDS_AVDD/RDC_ELVSS/RDS_ELVDD), collapsing all outputs within <10ms. If FD is grounded, outputs float high-impedance, requiring external discharge paths for safety-critical applications.

How is AVDD OCP threshold configured via the CTRL pin?

AVDD OCP is set by pulse count on CTRL: 0 pulses = 210mA (default), 98–104 pulses = 90–270mA in 30mA steps. After setting, the threshold persists until power cycle or EN_AVDD/CTRL low reset. Detection occurs if AVDD current exceeds threshold for 1ms, triggering full shutdown.

Does MP5611GQT-P support remote sensing for ELVDD output?

Yes - connecting FB to the positive terminal of the main ELVDD output capacitor enables remote sensing. This activates high-accuracy mode when (VELVDD − VFB) < 250mV, improving regulation to ±0.5% at 25°C versus ±0.8% with local sensing, critical for uniform display luminance.

What is the minimum recommended inductor value for the ELVSS converter?

The datasheet specifies 4.7µH (e.g., Coilcraft XFL4020-4R7ML) as optimal. Using <4.7µH increases peak inductor current and ripple, potentially triggering current limit or degrading ELVSS regulation under heavy load (>300mA). Inductor DC resistance should be minimized for efficiency.

MP5611GQT-P Specifications

Product attributes
Attribute value
Manufacturer:
Monolithic Power Systems Inc.
Series:
MP
Package/Case:
16-PowerWFQFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Applications:
Converter, AMOLED Display
Voltage - Input:
2.9V ~ 5.2V
Number of Outputs:
3
Voltage - Output:
-1.4V ~ -6.4V, 4.6V ~ 5.2V, 5V ~ 7.7V
Operating Temperature:
-40°C ~ 125°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
16-TQFN (3x3)

MP5611GQT-P FAQ

1.How can I place an order for MP5611GQT-P through Aetrix?

Please submit a Request for Quotation (RFQ) for MP5611GQT-P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MP5611GQT-P reliable?

The price and inventory of MP5611GQT-P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MP5611GQT-P is usually 5 days.

3.What payment methods are accepted for MP5611GQT-P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MP5611GQT-P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MP5611GQT-P?

MP5611GQT-P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MP5611GQT-P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MP5611GQT-P?

For technical support, including MP5611GQT-P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MP5611GQT-P requirements.

6.How does Aetrix verify that MP5611GQT-P is sourced from the original manufacturer or authorized distributors?

All MP5611GQT-P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MP5611GQT-P meets industry standards.

7.What is the process for return or replacement of MP5611GQT-P?

All MP5611GQT-P units undergo pre-shipment inspection (PSI). If there is an issue with MP5611GQT-P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MP5611GQT-P part is unused and in its original packaging.

Return procedure for MP5611GQT-P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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