Monolithic Power Systems Inc. MP6922AGSE-Z

Overview

MP6922AGSE-Z from Monolithic Power Systems is a dual-channel, fast-turn-off intelligent rectifier IC designed for synchronous rectification in LLC resonant converters. It drives two N-channel MOSFETs, regulates forward voltage drop to 30mV, achieves 20ns total turn-off delay, supports up to 300kHz switching, and integrates reverse-current protection and light-load latching. It operates across 8V–24V VDD and targets high-efficiency AC-DC adapters.

For engineers reviewing the MP6922AGSE-Z datasheet, MP6922AGSE-Z pinout, MP6922AGSE-Z application, or MP6922AGSE-Z equivalent, this page delivers verified technical context, SOIC8 package mapping, real-world CCM/CrCM/DCM operation support, and design-critical timing thresholds including τDoff = 75ns (max), Vfwd = 30mV (typ), and light-load entry at τLL-Delay = 160μs.

Technical Context

The MP6922AGSE-Z implements adaptive gate control with dual independent sensing paths (VD1/VS1 and VD2/VS2) to regulate MOSFET conduction via dynamic VDS thresholding (–30mV turn-on, +30mV turn-off). Its blanking logic enforces 1μs minimum ON-time and modifies turn-off threshold to +100mV during blanking to prevent shoot-through in CCM.

It embeds three protection layers: thermal shutdown (150°C trip, 30°C hysteresis), reverse-current latch (VRCP = 3V, τRCP = 150μs), and EN-controlled enable/disable with UVLO (6.0V rising, 0.5V hysteresis). Light-load mode activates when conducting period falls below 2.2μs, reducing quiescent current to ≤600μA.

Key Specifications

Pinout & Package

MP6922AGSE-Z is packaged in SOIC8 with exposed thermal pad (SOIC8E variant), offering 2.5W continuous power dissipation at TA = +25°C and θJA = 50°C/W. The exposed pad must be soldered to PGND for thermal and electrical integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel synchronous rectifier applications.

Compared with MP6922AGSE-Z, MP6922AGN-Z offers superior thermal handling in SOIC8E form factor, while MP6924AGS-Z extends channel count and configurability at the cost of larger footprint and added BOM complexity-neither is pin-compatible, and all require matching external MOSFET selection and layout optimization.

Availability

MP6922AGSE-Z is available at Aetrix Electronics and suitable for AC-DC adapters, LCD/PDP TV power supplies, and telecom SMPS requiring stable component supply, RoHS-compliant sourcing, and long-term lifecycle continuity.

Supply support for MP6922AGSE-Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance analog and power ICs, with design centers in the US, China, and Taiwan.

The MP6922A product line targets high-efficiency resonant converter applications, specifically engineered to replace Schottky diodes in LLC and phase-shifted full-bridge topologies through intelligent, low-latency synchronous rectification.

FAQ

What is the maximum recommended PCB copper area for the exposed pad on MP6922AGSE-Z?

The MP6922AGSE-Z uses SOIC8 packaging without an exposed pad; only the MP6922AGN-Z variant (SOIC8E) includes an exposed thermal pad. For MP6922AGSE-Z, standard SOIC8 thermal guidelines apply: use ≥4 thermal vias (0.3mm diameter) connecting pin 1–8 pads to inner PGND planes, and maintain ≥2mm² copper pour per pin for θJA reduction.

Can MP6922AGSE-Z drive logic-level MOSFETs with VGS(th) as low as 1.2V?

Yes. MP6922AGSE-Z drives gates to VDD−2.2V (min) under VDD <16V, ensuring ≥9.8V gate drive at VDD = 12V - well above 1.2V threshold. Its 3A pull-down strength also guarantees fast turn-off even with high gate charge logic-level devices like SiC or GaN-compatible MOSFETs.

How does the light-load latch-off function interact with burst-mode operation?

The latch-off activates when MOSFET conduction period falls below 2.2μs (τLL), with 160μs delay (τLL-Delay) before latching. During burst mode, if OFF periods exceed τLL-OFF = 50μs, latching occurs immediately. Both mechanisms reduce driver losses to ≤600μA, preserving 0.5W standby compliance without compromising restart timing.

Is reverse-current protection active in DCM operation?

No. Reverse-current protection (RCP) is disabled in DCM because current naturally crosses zero each cycle; it activates only in CCM/CrCM where reverse current can persist. The RCP function relies on detecting voltage spikes at the RCP pin during high-frequency CCM transitions - irrelevant in discontinuous modes.

What is the minimum recommended gate resistor value for MP6922AGSE-Z when driving 5nF MOSFET gate capacitance?

No external gate resistor is required. MP6922AGSE-Z features integrated 1Ω pull-down impedance and 3A sink capability, enabling direct drive of MOSFETs with Qg ≤50nC. For 5nF Ciss, typical rise/fall times remain <20ns without series resistance - adding a resistor degrades turn-off speed and risks missing the 20ns timing window.

Does MP6922AGSE-Z support mixed MOSFET types (e.g., one Si and one SiC) across its two channels?

Yes. Independent VD1/VS1 and VD2/VS2 sensing allows channel-specific optimization. SiC MOSFETs (with faster switching and lower Qrr) can be used on one channel, while silicon devices handle higher average current on the other - provided VDS regulation thresholds and timing margins are validated per channel under worst-case load/transient conditions.

How is thermal shutdown behavior affected by PCB layout in SOIC8 packages?

SOIC8 θJA = 90°C/W assumes JEDEC-standard 4-layer board with 1in² copper; inadequate copper or missing thermal vias raise junction temperature by up to 40°C at 1W dissipation. Thermal shutdown triggers at 150°C, but release occurs only after die cools to 120°C - poor layout may cause repeated cycling under sustained 0.8W loads.