Monolithic Power Systems Inc. MP8719GQ-Z

Overview

MP8719GQ-Z from Monolithic Power Systems is a 26V, 12A synchronous buck converter with integrated ±1A VTT LDO and buffered 1% accurate VTTREF output, designed specifically for DDR3/DDR3L/LPDDR3/DDR4 memory power delivery. It delivers high power density in a QFN-16 (3mm×3mm) package, features adaptive constant-on-time (COT) control, DC auto-tune loop, and operates across 4.5V–26V input with 135μA quiescent current.

For engineers reviewing the MP8719GQ-Z datasheet, MP8719GQ-Z pinout, MP8719GQ-Z application for DDR memory rails, or MP8719GQ-Z equivalent for high-current VDDQ/VTT solutions, this device provides verified fast transient response, integrated protection (OCL/OVP/UVP/OTW), and minimal external component count - critical for compact, thermally constrained TV and networking power designs.

Technical Context

The MP8719 implements adaptive COT control with internal ramp compensation to ensure stability with ceramic output capacitors, eliminating need for ESR-dependent compensation. Its valley-current sensing OCL uses low-side MOSFET R_DS(ON) (6.6mΩ typ) for cycle-by-cycle current limiting without external sense resistors.

DC auto-tune loop dynamically adjusts reference to maintain tight line/load regulation, while dual EN pins (EN1/EN2) enable independent sequencing of VDDQ, VTTREF, and VTT - supporting DDR-specific soft-start, soft-shutdown, and Hi-Z VTT disable modes per JEDEC specifications.

Key Specifications

Pinout & Package

MP8719GQ-Z is housed in a thermally enhanced QFN-16 (3mm × 3mm, 0.5mm pitch) package with exposed thermal pad. Pin 1 is marked by dot; top marking is "AZF" followed by year/lot code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR memory power delivery applications.

Compared with RTQ2132B-QT and ISL95812IRZ, MP8719GQ-Z uniquely integrates full DDR4-compliant VDDQ+VTT+VTTREF in one QFN-16 package with USM and 135μA S3 quiescent current - making it optimal for space- and noise-constrained consumer electronics where integration and silent operation are primary design drivers.

Availability

MP8719GQ-Z is available at Aetrix Electronics and suitable for DDR4 memory power supplies, smart TV mainboards, and set-top box DDR subsystems requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for MP8719GQ-Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance analog and power ICs, with over two decades of leadership in DC/DC conversion, motor drivers, and battery management.

The MP8719 belongs to MPS's DDR memory power product line, engineered specifically to consolidate VDDQ, VTT, and VTTREF into a single high-density solution for consumer and networking DDR3/DDR4 applications - minimizing layout complexity and improving system-level power integrity.

FAQ

What is the minimum output capacitance required for stable VDDQ operation?

The MP8719GQ-Z is stable with ceramic output capacitors down to 22µF total (e.g., four 4.7µF/0805 X7R). Internal ramp compensation eliminates ESR dependency, enabling pure ceramic solutions that reduce ripple by >40% versus POSCAP-based designs and shrink footprint by 30%.

How does the dual EN pin configuration support DDR memory power sequencing?

EN1 and EN2 provide three distinct states: both high enables full VDDQ/VTTREF/VTT; EN1 low + EN2 high enables VDDQ/VTTREF only (VTT Hi-Z for DDR self-refresh); both low disables all rails with soft shutdown. This matches JEDEC JESD209-4 timing requirements without external logic.

Can the MP8719GQ-Z operate without an external bootstrap capacitor?

No - a 0.1µF X7R ceramic capacitor rated ≥16V must be placed between BST and SW pins. The bootstrap circuit drives the high-side MOSFET gate; omission causes immediate failure to regulate VDDQ due to insufficient HS gate drive voltage.

What is the accuracy of VTTREF tracking across temperature and load?

VTTREF maintains ±1% accuracy relative to VDDQ/2 from -40°C to +125°C junction temperature and across 0–1A VTT load, verified per datasheet Table 1 (page 5). Tracking error remains ≤±15mV at 1A sink/source, meeting DDR4 VTTREF specification.

Does the MP8719GQ-Z support dynamic voltage scaling (DVS) for DDR interfaces?

No - it lacks digital interface (SMBus/I²C) or programmable VID pins. VDDQ is set statically via FB resistor divider; VTT and VTTREF track VDDQ/2 inherently. DVS requires external microcontroller control of FB divider or use of dedicated DVS-capable ICs like ISL95812.

How is over-temperature warning (OTW) asserted and cleared?

OTW is an open-drain output pulled low when junction temperature exceeds 130°C (±5°C). It remains low until temperature falls below 105°C (130°C – 25°C hysteresis). No reset signal is needed - automatic recovery occurs once thermal margin is restored.

What happens to VTT during soft shutdown when EN2 goes low?

When EN2 transitions low, the MP8719GQ-Z executes coordinated soft shutdown: VDDQ ramps down linearly, VTTREF tracks VDDQ/2, and VTT follows VTTREF with <±30mV error - ensuring DDR termination remains valid throughout shutdown to prevent data corruption.