onsemi MPS2222AZL1

Overview

MPS2222AZL1 from onsemi is an NPN silicon general-purpose transistor in TO-92 package, rated for 40 V_CEO, 600 mA continuous collector current, and 1.5 W power dissipation at T_C = 25°C. It delivers h_FE ≥ 100 at I_C = 150 mA, V_CE = 10 V, and exhibits f_T = 300 MHz - used in low-voltage switching and linear amplification stages of industrial control interfaces and sensor signal conditioning circuits.

For engineers reviewing the MPS2222AZL1 datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO/I_C margin for 24 V rail switching, h_FE consistency across −55°C to +125°C, saturation voltage under 150 mA load, thermal resistance (R_JC = 83.3°C/W), and Pb-free tape-and-ammo packaging compliance.

Technical Context

The MPS2222AZL1 operates as a discrete NPN bipolar junction transistor optimized for medium-speed switching and analog amplification. Its design supports DC current gain (h_FE) ≥ 300 at I_C = 10 mA and ≥ 100 at I_C = 150 mA, with V_CE(sat) ≤ 0.3 V at I_C = 150 mA / I_B = 15 mA and ≤ 1.0 V at I_C = 500 mA / I_B = 50 mA.

Thermal performance is defined by R_JC = 83.3°C/W and R_JA = 200°C/W, enabling operation from −55°C to +150°C junction temperature. Switching parameters include t_d ≤ 10 ns, t_r ≤ 25 ns, t_s ≤ 225 ns, and t_f ≤ 60 ns under specified test conditions (V_CC = 30 V, I_C = 150 mA).

Key Specifications

Pinout & Package

Package: TO-92 (Case 29−11, Style 1), epoxy-molded plastic with 3 leads. Dimensions per ON Semiconductor specification: body height 4.45–5.20 mm, lead pitch 2.54 mm, lead diameter 0.407–0.533 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Compared with 2N2222A and PN2222A, the MPS2222AZL1 provides higher V_CEO, tighter h_FE distribution at operational current, lower V_CE(sat), and documented switching times - making it superior for new designs targeting 24–30 V industrial control and energy-efficient signal routing.

Availability

MPS2222AZL1 is available at Aetrix Electronics and suitable for industrial relay drivers, microcontroller GPIO expanders, LED matrix row drivers, and low-voltage power switches requiring stable component supply, RoHS-compliant packaging, and tape-and-ammo delivery for automated assembly.

Supply support for MPS2222AZL1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MPS2222AZL1 belongs to onsemi's Preferred Devices portfolio of general-purpose transistors engineered for reliability, manufacturability, and broad compatibility in industrial control, automation, and embedded system signal conditioning.

FAQ

What is the maximum collector-emitter voltage rating for the MPS2222AZL1?

The MPS2222AZL1 has a maximum collector-emitter voltage (V_CEO) rating of 40 Vdc, verified per ON Semiconductor's MPS2222/D datasheet Rev. 2. This exceeds the 30 V rating of the standard MPS2222 and enables safe operation in 24 V industrial systems with transient margin. The MPS2222AZL1 maintains this rating across its full operating temperature range (−55°C to +150°C).

Does the MPS2222AZL1 support Pb-free reflow soldering processes?

Yes, the MPS2222AZL1 is manufactured in a Pb-free TO-92 package compliant with JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and RoHS Directive 2011/65/EU. Its peak reflow temperature tolerance is 260°C, matching standard lead-free process requirements. The MPS2222AZL1G variant explicitly denotes Pb-free construction, but the base MPS2222AZL1 also meets the same specification per ordering information.

What is the DC current gain (h_FE) of the MPS2222AZL1 at 150 mA collector current?

The MPS2222AZL1 guarantees h_FE ≥ 100 when tested at I_C = 150 mA, V_CE = 10 V, and T_A = 25°C, as specified in the "ON CHARACTERISTICS" table of the official datasheet. This minimum value is maintained across the full operating temperature range, with h_FE dropping to ≥35 at −55°C and ≥75 at +125°C under identical bias conditions.

How does the switching performance of the MPS2222AZL1 compare to legacy 2N2222A devices?

The MPS2222AZL1 offers faster switching than the 2N2222A: storage time (t_s) ≤ 225 ns vs. ~500 ns, fall time (t_f) ≤ 60 ns vs. ~200 ns, and rise time (t_r) ≤ 25 ns vs. ~60 ns. These improvements stem from optimized doping profiles and reduced base resistance. For PWM-driven loads, the MPS2222AZL1 enables higher frequency operation with lower switching losses than the 2N2222A.

Is the MPS2222AZL1 pin-compatible with other TO-92 NPN transistors like the 2N2222A?

Yes, the MPS2222AZL1 uses the standard TO-92 package (Case 29−11, Style 1) with identical pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. This matches the 2N2222A, PN2222A, and most industry-standard TO-92 NPN transistors. No PCB layout changes are required for drop-in replacement, though designers should verify V_CEO, h_FE, and V_CE(sat) margins for functional equivalence in their specific circuit.