onsemi MPS2369G

Overview

MPS2369G from onsemi is an NPN silicon switching transistor in TO-92 package, rated for V_CEO = 15 V, I_C = 200 mA, and P_D = 625 mW at T_A = 25°C, with typical h_FE = 40–120 (I_C = 10–100 mA), used in low-voltage digital logic interface and signal switching circuits.

For engineers reviewing the MPS2369G datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat) ≤ 0.25 V at I_C/I_B = 10/1 mA, guaranteed f_T ≥ 100 MHz small-signal gain, and validated switching times (t_on ≤ 12 ns, t_off ≤ 18 ns) under defined test conditions.

Technical Context

The MPS2369G operates as a general-purpose NPN bipolar junction transistor optimized for fast switching in low-power digital and analog signal paths. Its design supports DC current gain h_FE ≥ 40 at I_C = 10 mA and V_CE = 1.0 V, with saturation voltage V_CE(sat) ≤ 0.25 V under same bias, enabling efficient drive of LED loads and logic-level translators.

Thermal performance is defined by R_JA = 200°C/W and operating junction temperature range –55°C to +150°C. Switching behavior is characterized using standardized pulse test conditions (300 ns width, 2% duty cycle), with storage time t_s ≤ 13 ns confirming suitability for high-speed on/off control in timing and waveform generation circuits.

Key Specifications

Pinout & Package

Package: TO-92 (Case 29–11, TO-226AA), through-hole, 3-lead plastic package with standard lead assignment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Compared with BC337-40 and MPSA06, the MPS2369G offers the lowest V_CE(sat) and fastest t_off among these TO-92 NPN transistors, making it optimal for low-loss, high-speed digital switching where 15 V rail compliance is sufficient.

Availability

MPS2369G is available at Aetrix Electronics and suitable for LED driver circuits, digital logic level shifters, relay coil drivers, and pulse generator stages requiring stable component supply and consistent parametric performance across production batches.

Supply support for MPS2369G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MPS2369G belongs to onsemi's legacy general-purpose bipolar transistor family, designed specifically for cost-sensitive, high-volume switching applications demanding predictable gain, fast response, and robust thermal performance in TO-92 packaging.

FAQ

What is the maximum continuous collector current rating for the MPS2369G?

The MPS2369G has a maximum continuous collector current (I_C) rating of 200 mA at T_A = 25°C. Derating applies above 25°C at 5.0 mW/°C, and actual usable current depends on PCB layout, ambient temperature, and thermal management. The MPS2369G must not exceed this limit in sustained DC operation to avoid junction overheating or permanent degradation.

Does the MPS2369G support operation at elevated temperatures?

Yes, the MPS2369G is qualified for junction temperatures from –55°C to +150°C. Its thermal resistance R_JA = 200°C/W means that at 200 mA and V_CE(sat) ≈ 0.25 V, power dissipation is ~50 mW - resulting in <10°C junction rise above ambient. This makes the MPS2369G suitable for under-hood automotive and industrial control environments where ambient reaches 85°C.

Is the MPS2369G pin-compatible with other TO-92 NPN transistors like the 2N3904?

No - the MPS2369G uses standard TO-92 pinout (Emitter-Base-Collector = Pin 1-2-3), matching the 2N3904 and BC547, but its electrical characteristics differ significantly: V_CEO = 15 V (vs. 40 V for 2N3904), and h_FE min = 40 (vs. 100). Substitution requires verification of voltage margin and gain requirements in the target circuit; the MPS2369G is not a drop-in replacement for 2N3904 in high-voltage applications.

What is the typical small-signal current gain (h_fe) of the MPS2369G at 100 MHz?

The MPS2369G specifies h_fe ≥ 5.0 at I_C = 10 mA, V_CE = 10 V, and f = 100 MHz. This value reflects usable high-frequency amplification capability, confirming suitability for RF bias networks and oscillator active devices where gain above 5× is required. The MPS2369G maintains this minimum gain across its full operating temperature range per datasheet characterization.

Can the MPS2369G be used in linear amplifier configurations?

The MPS2369G is characterized and optimized for switching operation, with guaranteed parameters focused on V_CE(sat), t_on/t_off, and h_FE in saturation. While it can operate in active region, no linearity, noise, or harmonic distortion data is provided in the official datasheet. For precision linear amplification, dedicated small-signal transistors such as the MPSA18 or BC550 are recommended instead of the MPS2369G.