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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MPS3563G

Name: MPS3563G
Brand: onsemi
SKU: MPS3563G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MPS3563G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body

Datasheet:: MPS3563G.pdf

Description:: TRANS NPN 12V 0.05A TO92

Quantity:: RFQ Add To RFQ list

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Inventory:9,020

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Product details

Overview

MPS3563G from onsemi is an NPN silicon small-signal transistor in TO-92 package, rated for V_CEO = 12 V, I_C = 50 mA, f_T = 600–1500 MHz, and P_D = 350 mW at T_A = 25°C. It serves as a high-frequency amplifier or oscillator stage in RF front-ends, signal generators, and low-power transmitter circuits.

For engineers reviewing the MPS3563G datasheet, pinout, applications, or equivalent options, key selection criteria include its V_EBO = 2.0 Vdc limit, h_FE range of 20–200 at I_C = 8.0 mAdc, C_obo = 1.7 pF at V_CB = 10 Vdc, and Pb-free TO-92 packaging for RoHS-compliant designs.

Technical Context

The MPS3563G operates as a general-purpose NPN bipolar junction transistor optimized for RF amplification up to 500 MHz, with verified small-signal gain (h_fe = 20–250 at 1 kHz) and power gain (G_pe = 14 dB at f = 200 MHz). Its thermal resistance R_JA = 357 °C/W reflects standard PCB-mounting conditions.

It features V_(BR)EBO = 2.0 Vdc - lower than the MPS918's 3.0 Vdc - indicating tighter emitter-base junction control, and exhibits C_ibo = 2.0 pF (per MPS918 reference), supporting stable biasing in tuned amplifier configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	12 Vdc - maximum collector-emitter voltage before breakdown; sets safe operating voltage headroom in low-voltage RF stages.
I_C	50 mAdc - continuous collector current limit; defines max linear output capability in Class-A amplifiers.
f_T	600–1500 MHz - transition frequency range; determines usable bandwidth for small-signal amplification.
h_FE	20–200 - DC current gain at I_C = 8.0 mAdc, V_CE = 10 Vdc; impacts bias stability and gain predictability.
C_obo	1.7 pF at V_CB = 10 Vdc - output capacitance; critical for impedance matching and oscillator tank circuit design.
P_D @ T_A	350 mW - total dissipation at 25°C ambient; requires thermal derating (2.8 mW/°C) above ambient.
V_EBO	2.0 Vdc - emitter-base breakdown voltage; constrains base drive amplitude in common-emitter configurations.

Pinout & Package

Package: TO-92 (Case 29-11, Style 17), Pb-free, through-hole mounting. Dimensions per ON Semiconductor mechanical drawing: A = 4.45–5.20 mm, B = 4.32–5.33 mm, C = 3.18–4.19 mm.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Current sink terminal; connects to ground or emitter degeneration resistor in common-emitter amplifier.
2	Base	Control input; accepts bias current to regulate collector current; sensitive to ESD due to V_EBO = 2.0 Vdc limit.
3	Collector	Output terminal; drives load or tank circuit; supports V_CBO = 30 Vdc for reverse-biased operation in switching modes.

Key Features

Feature	Design Value
High f_T range	600–1500 MHz enables stable amplification in VHF/UHF bands up to 500 MHz oscillator applications.
Low C_obo	1.7 pF minimizes Miller effect in common-emitter stages, preserving high-frequency gain flatness.
Pb-free TO-92	RoHS-compliant packaging with identical mechanical footprint to legacy MPS3563, enabling drop-in replacement.
Verified G_pe	14 dB power gain at 200 MHz confirms suitability for low-noise RF driver stages without external matching.

Applications

FM Transmitter Front-End	RF Signal Generator Stage
Use Scenario: Amplifying 88–108 MHz FM carrier signals prior to antenna coupling in portable transmitters. IC Role / Device Role / Timing Role: NPN RF amplifier in common-emitter configuration with tuned collector load. Use Value: Delivers 14 dB power gain at 200 MHz and supports 30 mW output at 500 MHz, meeting Class-D low-power broadcast requirements.	Use Scenario: Generating stable 100–400 MHz test tones in benchtop signal sources. IC Role / Device Role / Timing Role: Active element in Colpitts or Clapp oscillator topology. Use Value: f_T up to 1500 MHz and C_obo = 1.7 pF enable reliable oscillation with minimal phase noise in LC-tuned circuits.
Low-Power Oscillator Module	IF Amplifier in AM Receiver
Use Scenario: Building compact 10.7 MHz or 455 kHz local oscillator modules for SDR receivers. IC Role / Device Role / Timing Role: Gain block in feedback oscillator loop with crystal or ceramic resonator. Use Value: h_FE ≥ 20 at 8 mA ensures sufficient loop gain margin; V_EBO = 2.0 Vdc allows precise base biasing via resistive divider.	Use Scenario: Boosting intermediate frequency (455 kHz) signals after mixer output in analog AM radios. IC Role / Device Role / Timing Role: Single-stage voltage amplifier with emitter degeneration for linearity. Use Value: h_fe = 20–250 at 1 kHz provides adjustable gain; 350 mW P_D supports continuous operation under varying supply conditions.

FM Transmitter Front-End

RF Signal Generator Stage

Use Scenario: Amplifying 88–108 MHz FM carrier signals prior to antenna coupling in portable transmitters.

IC Role / Device Role / Timing Role: NPN RF amplifier in common-emitter configuration with tuned collector load.

Use Value: Delivers 14 dB power gain at 200 MHz and supports 30 mW output at 500 MHz, meeting Class-D low-power broadcast requirements.

Use Scenario: Generating stable 100–400 MHz test tones in benchtop signal sources.

IC Role / Device Role / Timing Role: Active element in Colpitts or Clapp oscillator topology.

Use Value: f_T up to 1500 MHz and C_obo = 1.7 pF enable reliable oscillation with minimal phase noise in LC-tuned circuits.

Low-Power Oscillator Module

IF Amplifier in AM Receiver

Use Scenario: Building compact 10.7 MHz or 455 kHz local oscillator modules for SDR receivers.

IC Role / Device Role / Timing Role: Gain block in feedback oscillator loop with crystal or ceramic resonator.

Use Value: h_FE ≥ 20 at 8 mA ensures sufficient loop gain margin; V_EBO = 2.0 Vdc allows precise base biasing via resistive divider.

Use Scenario: Boosting intermediate frequency (455 kHz) signals after mixer output in analog AM radios.

IC Role / Device Role / Timing Role: Single-stage voltage amplifier with emitter degeneration for linearity.

Use Value: h_fe = 20–250 at 1 kHz provides adjustable gain; 350 mW P_D supports continuous operation under varying supply conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC547C	f_T = 300 MHz (lower), V_CEO = 45 V (higher), h_FE = 420–800 (wider spread)	Better DC gain consistency but insufficient f_T for >200 MHz use; suited for audio/IF only	Select BC547C only if operating below 100 MHz and higher V_CEO margin is required.
MPS2222A	V_CEO = 40 V, f_T = 250 MHz, P_D = 625 mW, TO-92 package	Higher power and voltage rating but lower f_T; less suitable for VHF oscillator design	Choose MPS2222A when robustness at >12 V supply or >50 mA I_C is needed, not for high-frequency gain.

Compared with BC547C and MPS2222A, the MPS3563G uniquely balances VHF gain (f_T up to 1500 MHz), low output capacitance (1.7 pF), and Pb-free TO-92 compliance - making it optimal for compact, high-frequency, RoHS-constrained RF amplifier and oscillator designs where 12 V operation is sufficient.

Availability

MPS3563G is available at Aetrix Electronics and suitable for FM transmitter front-ends, RF signal generator stages, and low-power oscillator modules requiring stable component supply, full traceability, and RoHS-compliant sourcing.

Supply support for MPS3563G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, and consumer markets.

The MPS3563G belongs to onsemi's legacy NPN RF transistor product line, designed specifically for high-frequency amplification and oscillator functions in cost-sensitive, space-constrained portable RF systems.

FAQ

What is the maximum collector-emitter voltage rating for the MPS3563G?

The MPS3563G has a maximum collector-emitter voltage rating (V_CEO) of 12 Vdc. This value is specified under test condition I_C = 3.0 mAdc and I_B = 0. Exceeding this voltage risks junction breakdown and permanent device failure. The MPS3563G must be used within this limit in all operating conditions, including transient spikes, to ensure reliability.

Does the MPS3563G have Pb-free packaging?

Yes, the MPS3563G is explicitly designated as a Pb-free variant in the ordering information and marking diagram. It uses a RoHS-compliant TO-92 package (Style 17) with lead finish meeting JEDEC J-STD-609 Category 1 requirements. The "G" suffix in MPS3563G confirms Pb-free construction per onsemi's packaging standards.

What is the transition frequency (f_T) range of the MPS3563G?

The MPS3563G has a transition frequency (f_T) range of 600–1500 MHz, measured at I_C = 8.0 mAdc, V_CE = 10 Vdc, and f = 100 MHz. This wide f_T span reflects process variation across production lots and confirms its suitability for VHF amplifier and oscillator applications up to 500 MHz.

How is the pinout configured for the MPS3563G in TO-92 package?

The MPS3563G uses TO-92 Style 17 pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. This matches the mechanical drawing in the datasheet (CASE 29-11, STYLE 17). Correct orientation is confirmed by the flat side of the package facing the viewer with leads downward - left-to-right pin order is E-B-C.

What is the emitter-base breakdown voltage (V_EBO) for the MPS3563G?

The emitter-base breakdown voltage (V_EBO) for the MPS3563G is 2.0 Vdc, tested at I_E = 10 µAdc with collector open. This relatively low value requires careful base bias network design to avoid forward overvoltage during turn-on or signal peaks, especially in common-emitter configurations with resistive base drive.

MPS3563G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 50 mA

Voltage - Collector Emitter Breakdown (Max):: 12 V

Vce Saturation (Max) @ Ib, Ic:: -

Current - Collector Cutoff (Max):: 10nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 20 @ 8mA, 10V

Power - Max:: 350 mW

Frequency - Transition:: 600MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

MPS3563G FAQ

1.How can I place an order for MPS3563G through Aetrix?

Please submit a Request for Quotation (RFQ) for MPS3563G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MPS3563G reliable?

The price and inventory of MPS3563G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MPS3563G is usually 5 days.

3.What payment methods are accepted for MPS3563G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MPS3563G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MPS3563G?

MPS3563G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MPS3563G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MPS3563G?

For technical support, including MPS3563G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MPS3563G requirements.

6.How does Aetrix verify that MPS3563G is sourced from the original manufacturer or authorized distributors?

All MPS3563G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MPS3563G meets industry standards.

7.What is the process for return or replacement of MPS3563G?

All MPS3563G units undergo pre-shipment inspection (PSI). If there is an issue with MPS3563G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MPS3563G part is unused and in its original packaging.

Return procedure for MPS3563G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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